NVMFS016N10MCLT1G [ONSEMI]
MOSFET - Power, Single, N-Channel 100 V, 14 mΩ, 46A;型号: | NVMFS016N10MCLT1G |
厂家: | ONSEMI |
描述: | MOSFET - Power, Single, N-Channel 100 V, 14 mΩ, 46A |
文件: | 总8页 (文件大小:147K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Power, Single
N-Channel
100 V, 14 mW, 46 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
14 mW @ 10 V
20 mW @ 4.5 V
100 V
46 A
NVMFS016N10MCL
D (5,6)
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
G (4)
• AEC−Q101 Qualified and PPAP Capable
• NVMFWS016N10MCL − Wettable Flank Products
• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free
and are RoHS Compliant
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
D
V
DSS
S
S
S
G
D
D
1
Gate−to−Source Voltage
V
GS
V
XXXXXX
AYWZZ
DFN5
CASE 488AA
STYLE 1
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
46
A
C
D
Current R
(Note 1)
q
JC
T
C
32
D
D
Steady
State
Power Dissipation
(Note 1)
T
C
P
64
W
A
D
R
q
JC
S
S
S
G
D
D
T
C
= 100°C
32
XXXXXX
AYWZZ
Continuous Drain
Current R
T = 25°C
I
10.9
7.7
3.6
1.8
243
A
D
DFNW5
(for WF Version)
CASE 507BA
q
JA
T = 100°C
A
(Notes 1, 2)
Steady
State
D
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 2)
XXXXXX = Specific Device Code
q
JA
T = 100°C
A
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
49
A
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Single Pulse Drain−to−Source Avalanche
E
AS
358
mJ
Energy (I
= 2.2 A)
L(pk)
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
2.35
41
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using 1 in pad size, 1 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
September, 2021 − Rev. 1
NVMFS016N10MCL/D
NVMFS016N10MCL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
60
mV/°C
(BR)DSS
I
D
= 250 mA, ref to 25°C
T
J
Zero Gate Voltage Drain Current
I
T = 25°C
1
mA
DSS
J
V
DS
= 0 V,
GS
V
= 100 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
Gate Threshold Voltage
V
V
GS
= V , I = 64 mA
1
3
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I
D
= 250 mA, ref to 25°C
−5.6
11.5
16
mV/°C
mW
GS(TH)
J
R
V
GS
= 10 V, I = 11 A
14
20
DS(on)
D
V
= 4.5 V, I = 9 A
D
GS
DS
Forward Transconductance
Gate−Resistance
g
FS
V
= 10 V, I = 11 A
42
S
D
R
T = 25°C
A
1.2
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
1250
460
8
pF
nC
ISS
Output Capacitance
C
V
= 0 V, f = 1 MHz, V = 50 V
DS
OSS
RSS
GS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
= 4.5 V, V = 50 V, I = 9 A
9.0
19
G(TOT)
Q
G(TOT)
GS
DS
D
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
2.1
3.7
2.0
2.8
G(TH)
Q
V
GS
= 10 V, V = 50 V, I = 11 A
GS
GD
GP
DS
D
Q
V
V
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
10
3.4
26
ns
d(ON)
Rise Time
t
r
V
= 10 V, V = 50 V,
DS
GS
D
I
= 11 A, R = 6 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
4.2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.84
0.72
34
1.3
V
SD
J
V
S
= 0 V,
GS
I
= 11 A
T = 125°C
J
Reverse Recovery Time
Reverse Recovery Charge
Charge Time
t
ns
nC
ns
ns
RR
Q
24
RR
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 6 A
t
16
a
Discharge Time
t
b
17
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
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2
NVMFS016N10MCL
TYPICAL CHARACTERISTICS
40
35
30
25
20
15
40
V
= 10 V to 3.4 V
GS
V
DS
= 10 V
3.2 V
3.0 V
35
30
25
20
15
10
2.8 V
T = 25°C
J
2.6 V
2.4 V
10
5
5
0
T = 150°C
T = −55°C
J
J
0
0
1
2
3
4
5
0
1
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
18
16
14
20
19
18
17
16
15
14
13
12
T = 25°C
J
T = 25°C
D
J
I
= 11 A
V
= 4.5 V
GS
V
= 10 V
12
10
GS
11
10
2
3
4
5
6
7
8
9
10
5
7
9
11
13 15 17 19 21 23 25
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
2.0
1.5
100
10
V
= 10 V
= 11 A
GS
T = 175°C
J
I
D
T = 150°C
J
1
T = 125°C
J
0.1
T = 85°C
J
0.01
0.001
1.0
0.5
T = 25°C
J
0.0001
0.00001
−50 −25
0
25
50
75 100 125 150 175
10 20
30
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMFS016N10MCL
TYPICAL CHARACTERISTICS
10
9
10K
1K
C
ISS
8
7
6
5
4
3
C
OSS
100
Q
Q
GD
GS
10
1
T = 25°C
D
J
V
= 0 V
2
1
0
GS
I
= 11 A
T = 25°C
J
C
RSS
V
DS
= 50 V
f = 1 MHz
0
2
4
6
8
10 12 14 16 18 20
0
10 20 30 40
50 60 70 80
90 100
Q , TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
V
GS
= 0 V
t
t
d(off)
10
d(on)
10
V
V
= 10 V
= 50 V
t
f
GS
DS
I
D
= 11 A
T = 125°C
J
T = 25°C
J
T = −55°C
J
t
r
1
1
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
T
= 25°C
C
Single Pulse
V
GS
≤ 10 V
100
10
T
= 25°C
J(initial)
10
T
= 125°C
J(initial)
1
10 ms
0.5 ms
1 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
100
, DRAIN−TO−SOURCE VOLTAGE (V)
0.1
1
0.1
1
10
1000
0.00001
0.0001
t , TIME IN AVALANCHE (s)
AV
0.001
V
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVMFS016N10MCL
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Transient Thermal Impedance
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFS016N10MCLT1G
016L10
DFN5
1500 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVMFWS016N10MCLT1G
016W10
DFN5
(Wettable Flank, Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFS016N10MCL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10
0.10
C
C
3.00
0
3.80
12
q
−−−
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
RECOMMENDED
SIDE VIEW
DETAIL A
SOLDERING FOOTPRINT*
2X
5. DRAIN
0.495
4.560
8X b
A B
2X
0.10
0.05
C
c
e/2
e
1.530
L
2X
0.475
1
4
3.200
1.330
K
4.530
E2
PIN 5
(EXPOSED PAD)
M
2X
0.905
L1
1
D2
BOTTOM VIEW
0.965
G
4X
1.000
4X
1.270
PITCH
DIMENSIONS: MILLIMETERS
0.750
*For additional information on our Pb−Free strategy
and soldering details, please download the
onsemi Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
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6
NVMFS016N10MCL
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
q
q
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7
NVMFS016N10MCL
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