NVHL040N65S3 [ONSEMI]
MOSFET – Power, N-Channel, SUPERFET® III,Automotive, Easy-Drive 650 V, 65 A, 40 mΩ;
| 型号： | NVHL040N65S3 |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET – Power, N-Channel, SUPERFET® III,Automotive, Easy-Drive 650 V, 65 A, 40 mΩ |
| 文件： | 总10页 (文件大小：459K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power,
N-Channel, SUPERFET) III,
Automotive, Easy-Drive
650 V, 65 A, 40 mW
NVHL040N65S3
Description
www.onsemi.com
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
40 mW @ 10 V
65 A
D
Consequently, SUPERFET III MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
Features
• AEC−Q101 Qualified
G
• 700 V @ T = 150°C
J
• Typ. R
= 35.4 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 136 nC)
S
g
POWER MOSFET
• Low Effective Output Capacitance (Typ. C
= 1154 pF)
oss(eff.)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for HEV
G
D
S
TO−247 3LD
CASE 340CX
MARKING DIAGRAM
$Y&Z&3&K
NVHL
040N65S3
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
NVHL040N65S3
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
June, 2020 − Rev. 0
NVHL040N65S3/D
NVHL040N65S3
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
30
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
65
A
C
− Continuous (T = 100°C)
41
C
I
Drain Current
− Pulsed (Note 1)
162.5
358
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
AS
AS
I
8.1
E
4.17
100
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
20
P
(T = 25°C)
417
W
W/°C
°C
D
C
− Derate Above 25°C
3.33
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. I = 8.1 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 32.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.3
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
40
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
N/A
Quantity
NVHL040N65S3
NVHL040N65S3
TO−247 G03
Tube
N/A
30 Units
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150_C
GS
D
J
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= 1 mA, Referenced to 25_C
0.64
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
−
−
−
−
4.5
−
1
mA
DSS
GS
= 520 V, T = 125_C
−
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 1.7 mA
2.5
−
−
4.5
40
−
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 32.5 A
35.4
46
D
g
FS
= 20 V, I = 32.5 A
−
D
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2
NVHL040N65S3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
4740
120
1154
171
136
33
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
GS
oss(eff.)
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 32.5 A, V = 10 V
D GS
g(tot)
(Note 4)
Q
gs
gd
Q
59
ESR
f = 1 MHz
0.7
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
V
= 400 V, I = 32.5 A,
−
−
−
−
35
51
95
30
−
−
−
−
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R = 3.3 W
g
t
r
(Note 4)
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
−
−
−
−
−
−
−
65
162.5
1.2
−
A
A
S
I
SM
V
SD
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 32.5 A
−
V
GS
SD
t
rr
= 0 V, I = 32.5 A,
534
13.6
ns
mC
GS
SD
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NVHL040N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
200
100
200
V
GS
=10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
=10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100
10
1
10
1
250 ms Pulse Test
= 25°C
250 ms Pulse Test
= 25°C
T
C
T
C
0.2
1
10
20
0.1
1
10
20
V
DS
, Drain−Source Voltage (V)
V
DS
, Drain−Source Voltage (V)
Figure 1. On−Region Characteristics 255C
Figure 2. On−Region Characteristics 1505C
300
0.06
0.05
0.04
100
150°C
V
GS
= 10 V
25°C
V
GS
= 20 V
10
0.03
0.02
−55°C
V
= 20 V
DS
T
C
= 25°C
250 ms Pulse Test
1
0.01
3
4
V
5
6
7
8
9
0
60
120
180
, Gate−Source Voltage (V)
I , Drain Current (A)
D
GS
Figure 4. On−Resistance Variation vs.
Figure 3. Transfer Characteristics
Drain Current and Gate Voltage
105
104
103
102
101
100
10−1
1000
100
10
C
iss
150°C
C
oss
1
25°C
V
= 0 V
GS
0.1
f = 1 MHz
C
rss
C
C
C
10−1
= C + C (C = shorted)
iss
gs gd ds
0.01
0.001
V
GS
= 0 V
= C + C
gd
oss
rss
ds
250 ms Pulse Test
= C
gd
1
10
102
103
0.0
0.5
1.0
1.5
V
SD
, Body Diode Forward Voltage (V)
V
DS
, Drain−Source Voltage (V)
Figure 5. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 6. Capacitance Characteristics
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4
NVHL040N65S3
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1.2
10
8
V
= 0 V
= 10 mA
GS
I
D
1.1
1.0
0.9
0.8
V
= 130 V
DS
6
V
= 400 V
DS
4
2
I
D
= 32.5 A
0
−50
50
100
150
0
50
100
150
0
Q , Total Gate Charge (nC)
T , Junction Temperature (5C)
g
J
Figure 7. Gate Charge Characteristics
Figure 8. Breakdown Voltage Variation
vs. Temperature
1000
3.0
2.5
2.0
1.5
R
DS(on) Limit
100
10
1
10 ms
100 ms
1 ms
1.0
0.5
0.0
10 ms
100 ms
0.1
T
R
= 25°C
C
1s/DC
= 0.3°C/W
V
= 10 V
= 32.5 A
q
JC
GS
Single Pulse
I
D
0.01
1
10
100
, Drain−Source Voltage (V)
1000
−50
0
50
100 150
T , Junction Temperature (5C)
V
DS
J
Figure 10. Maximum Safe Operating Area
Figure 9. On−Resistance Variation
vs. Temperature
30
25
20
15
10
80
60
40
20
0
5
0
150
25
50
75
100
125
0
130
DS
260
390
520
650
V
, Drain to Source Voltage (V)
T , Case Temperature (5C)
C
Figure 12. EOSS vs. Drain to Source Voltage
Figure 11. Maximum Drain Current
vs. Case Temperature
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5
NVHL040N65S3
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1000
1.2
1.0
0.8
0.6
0.4
Current Max Limit
100
0.2
0
10
0.00001 0.0001 0.001
0.01
0.1
1
0
25
50
75
100
125
150
t, Rectangular Pulse (s)
T , Case Temperature (5C)
C
Figure 14. Peak Current Capability
Figure 13. Normalized Power Dissipation
vs. Case Temperature
1.2
1.0
0.8
320
I
D
= 32.5 A
240
160
T = 150°C
J
80
0
0.6
0.4
I
= 1.7 mA
D
T = 25°C
J
10
5
6
7
8
9
−75 −50 −25
0
25 50 75 100 125 150
T , Ambient Temperature (5C)
J
V
GS
, Gate−to−Source Voltage (V)
Figure 16. Normalized Gate Threshold Voltage vs.
Temperature
Figure 15. RDS(on) vs. Gate Voltage Figure
2
DUTY CYCLE − DESCENDING ORDER
1
D = 0.5
0.2
P
DM
0.1
0.1
0.01
0.05
0.02
0.01
t
1
t
2
Z
q
(t) = r(t) x R
q
JC
JC
R
= 0.3°C/W
q
JC
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
q
JC C
J
DM
SINGLE PULSE
1
2
0.001
−4
−3
−2
−1
0
1
10−5
10
10
10
10
10
10
t, Rectangular Pulse Duration (sec)
Figure 17. Transient Thermal Response Curve
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6
NVHL040N65S3
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 18. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 19. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 20. Unclamped Inductive Switching Test Circuit & Waveforms
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7
NVHL040N65S3
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 21. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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