NVHL015N065SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 12 mohm, 650V, M2, TO247−3L;
| 型号： | NVHL015N065SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 12 mohm, 650V, M2, TO247−3L |
| 文件： | 总8页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – 12 mohm, 650 V,
M2, TO-247-3L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
650 V
18 mꢀ @ 18 V
163 A
N−CHANNEL MOSFET
NVHL015N065SC1
D
Features
• Typ. R
= 12 mꢀ @ V = 18 V
GS
= 15 mꢀ @ V = 15 V
GS
DS(on)
Typ. R
DS(on)
• Ultra Low Gate Charge (Q
= 283 nC)
G(tot)
G
• High Speed Switching with Low Capacitance (C = 430 pF)
oss
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
S
Typical Applications
• Automotive On Board Charger
• Automotive DC-DC Converter for EV/HEV
• Automotive Traction Inverter
G
D
S
TO−247−3LD
CASE 340CX
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
V
DSS
650
V
V
V
MARKING DIAGRAM
Gate−to−Source Voltage
V
GS
−8/+22
−5/+18
Recommended Operation Values
of Gate−to−Source Voltage
T
< 175°C
= 25°C
V
GSop
C
Continuous Drain
Current (Note 1)
Steady
State
T
I
D
163
643
115
321
484
798
A
W
A
C
HL015N
065SC1
$Y&Z&3&K
Power Dissipation
(Note 1)
P
D
Continuous Drain
Current (Note 1)
Steady
State
T
C
= 100°C
I
D
Power Dissipation
(Note 1)
P
D
W
A
Pulsed Drain Current
(Note 2)
T
= 25°C
I
DM
C
HL015N065SC1
= Specific Device Code
= onsemi Logo
$Y
&Z
&3
&K
Single Pulse Surge
Drain Current Capability
T = 25°C, t = 10 ꢁ s,
A
I
A
p
DSC
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
R
= 4.7
ꢀ
G
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
157
84
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
ORDERING INFORMATION
Energy (I
= 13 A, L = 1 mH) (Note 3)
L(pk)
Device
Package
Shipping
Maximum Lead Temperature for Soldering
T
300
°C
L
(1/8″ from case for 5 s)
NVHL015N065SC1
TO−247
Long Lead
30 Units /
Tube
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. EAS of 84 mJ is based on starting T = 25°C; L = 1 mH, I = 13 A,
J
AS
V
DD
= 50 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
May, 2022 − Rev. 3
NVHL015N065SC1/D
NVHL015N065SC1
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.24
40
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
ꢂ
JC
R
ꢂ
JA
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
650
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = 20 mA, referenced to 25°C
D
−
0.12
V/°C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25°C
−
−
−
−
−
−
10
1
ꢁ A
mA
nA
DSS
GS
DS
J
= 650 V
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
V
= +22/−8 V, V = 0 V
250
GSS
GS
DS
V
R
= V , I = 25 mA
1.8
−5
−
2.63
−
4.3
+18
−
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
GS
V
GS
V
GS
V
DS
= 15 V, I = 75 A, T = 25°C
15
12
16
44
mꢀ
DS(on)
D
J
= 18 V, I = 75 A, T = 25°C
−
18
−
D
J
= 18 V, I = 75 A, T = 175°C
−
D
J
Forward Transconductance
g
FS
= 10 V, I = 75 A
−
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 325 V
−
−
−
−
−
−
−
4790
430
33
−
−
−
−
−
−
−
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
D
= −5/18 V, V = 520 V,
283
72
G(TOT)
GS
DS
I
= 75 A
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
Q
GS
64
GD
R
f = 1 MHz
1.6
ꢀ
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
V
D
= −5/18 V, V = 400 V,
−
−
−
−
−
−
−
25
77
−
−
−
−
−
−
−
ns
d(ON)
GS
DS
I
= 75 A, R = 2.2 ꢀ
G
t
r
Inductive load
Turn−Off Delay Time
t
47
d(OFF)
Fall Time
t
f
11
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
1371
470
1841
ꢁ
J
E
OFF
E
tot
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
I
V
V
= −5 V, T = 25°C
−
−
−
−
−
157
484
−
A
V
SD
GS
J
Current
Pulsed Source−Drain Diode Forward
Current (Note 2)
I
SDM
Forward Diode Voltage
V
= −5 V, I = 75 A, T = 25°C
4.6
SD
GS
SD
J
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2
NVHL015N065SC1
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
= −5/18 V, I = 75 A,
−
−
−
−
−
−
33
261
9.2
16
−
−
−
−
−
−
ns
nC
ꢁ J
A
RR
GS
S
SD
dI /dt = 1000 A/ꢁ s
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
E
REC
I
RRM
Ta
19
ns
ns
Discharge Time
Tb
15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NVHL015N065SC1
TYPICAL CHARACTERISTICS
280
240
200
160
120
80
4
V
GS
= 18 V
15 V
12 V
18 V
12 V
3
2
15 V
10 V
9 V
8 V
1
40
0
0
0
2
4
6
8
10
0
40
80
120
160
200
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.6
120
100
80
60
40
20
0
I
D
= 75 A
I
V
= 75 A
D
= 18 V
GS
1.4
1.2
1.0
0.8
T = 150°C
J
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
6
9
12
15
18
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
280
100
280
240
V
DS
= 10 V
V
GS
= −5 V
T = 175°C
J
200
160
120
80
T = 25°C
J
10
1
T = 175°C
T = 25°C
J
J
T = −55°C
J
40
T = −55°C
J
0
2
4
6
8
3
6
9
12
15
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NVHL015N065SC1
TYPICAL CHARACTERISTICS (continued)
20
15
10
5
10000
I
D
= 75 A
C
iss
V
= 650 V
DD
1000
100
10
V
= 390 V
DD
V
= 520 V
C
DD
oss
0
C
f = 1 MHz
= 0 V
rss
V
GS
−5
0
50
100
150
200
250
300
350
0.1
1
10
100
650
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
100
10
1
180
150
V
GS
= 18 V
120
90
T = 25°C
J
60
30
0
R
= 0.24°C/W
ꢂ
JC
25
50
75
100
125
150
175
0.001
0.01
0.1
1
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100000
10000
1000
Single Pulse
R
= 0.24°C/W
ꢂ
JC
10 ꢁ s
100 ꢁ s
1 ms
T
C
= 25°C
100
10
1000
100
10 ms
Single Pulse
1
T = Max Rated
J
R
= 0.24°C/W
ꢂ
JC
DC
T
C
= 25°C
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NVHL015N065SC1
TYPICAL CHARACTERISTICS (continued)
2
1
0.5 Duty Cycle
0.2
0.1
0.1 0.05
0.02
Notes:
Z (t) = r(t) x R
ꢂ
JC
P
0.01
DM
ꢂ
JC
Single Pulse
0.00001
R
= 0.24°C/W
ꢂ
JC
0.01
Peak T = P
x Z (t) + T
ꢂ
JC C
J
DM
t
1
Duty Cycle, D = t /t
1
2
t
2
0.001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Case Thermal Response
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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