NVG600A75L4DSE2 [ONSEMI]
VE-Trac Dual Gen II - Dual Side Cooling Half-Bridge Power Module for Automotive, 750V, 600A, Weldable Power Tabs;
| 型号： | NVG600A75L4DSE2 |
| 厂家： | 
ONSEMI |
| 描述： | VE-Trac Dual Gen II - Dual Side Cooling Half-Bridge Power Module for Automotive, 750V, 600A, Weldable Power Tabs |
| 文件： | 总13页 (文件大小：349K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Automotive 750 V, 600 A
Dual Side Cooling
Half-Bridge Power Module
AHPM15−CFA MODULE
CASE MODHQ
MARKING DIAGRAM
VE-Tract Dual
NVG600A75L4DSE2
Product Description
The NVG600A75L4DSE2 is part of VE−Tract Dual family of
power modules with dual side cooling and compact footprints for
Hybrid (HEV) and Electric Vehicle (EV) traction inverter application.
The module consists of two narrow mesa Field Stop (FS4) IGBTs in
a half−bridge configuration. The chipset utilizes the new narrow mesa
IGBT technology in providing high current density and robust short
circuit protection with higher blocking voltage to deliver outstanding
performance in EV traction applications.
ZZZ = Assembly Lot Code
AT
Y
= Assembly & Test Location
= Year
WW = Work Week
XXXX = Specific Device Code
Liquid cooling heatsink reference design, loss models and CAD
models are available to support customers in inverter designs.
Features
• Dual−Side Cooling
• Integrated Chip Level Temperature and Current Sensor
• T
= 175°C for Continuous Operation
• Low−Stray Inductance
vj max
• Low Conduction and Switching Losses
• Automotive Grade
• 4.2 kV Isolated DBC Substrate
• AEC Qualified and PPAP Capable
• This Device is Pb−Free and is RoHS Compliant
Typical Applications
• Hybrid and Electric Vehicle Traction Inverter
• High Power DC−DC Boost Converter
ORDERING INFORMATION
See detailed ordering and shipping information on page 10 of
this data sheet.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
August, 2022 − Rev. 6
NVG600A75L4DSE2/D
VE−Tract Dual NVG600A75L4DSE2
PIN DESCRIPTION
Pin #
Pin
N
Pin Function Description
Low Side Emitter
Pin Arrangement
1
2
P
High Side Collector
3
4
H/S COLLECTOR SENSE
H/S CURRENT SENSE
H/S EMITTER SENSE
H/S GATE
High Side Collector Sense
High Side Current Sense
High Side Emitter Sense
High Side Gate
5
6
7
H/S TEMP SENSE (CATHODE)
H/S TEMP SENSE (ANODE)
~
High Side Temp sense Diode Cathode
High Side Temp sense Diode Anode
Phase Output
8
9
10
11
12
13
14
15
L/S CURRENT SENSE
L/S EMITTER SENSE
L/S GATE
Low Side Current Sense
Low Side Emitter Sense
Low Side Gate
L/S TEMP SENSE (CATHODE)
L/S TEMP SENSE (ANODE)
L/S COLLECTOR SENSE
Low Side Temp sense Diode Cathode
Low Side Temp sense Diode Anode
Low Side Collector Sense
DBC Substrate
Al O isolated substrate, basic isolation, and copper on both sides.
2
3
Lead Frame
Copper with Tin electro−plating.
Flammability Information
All materials present in the power module meet UL flammability rating class 94V−0.
MODULE CHARACTERISTICS
Symbol
Parameter
Continuous Operating Junction Temperature Range
Storage Temperature range
Rating
Unit
°C
°C
V
T
vj
−40 to 175
T
STG
−40 to 125
V
ISO
Isolation Voltage, AC, f = 50 Hz, t = 1 s
Comparative Tracking Index
4200
CTI
>600
−
Min
5.0
2.9
−
Typ
−
Max
−
Creepage
Clearance
Pin/Terminal to Pin/Terminal (closest location)
Pin/Terminal to Pin/Terminal (closest location)
Stray Inductance
mm
mm
nH
mW
g
−
−
L
sCE
8
−
R
Module Lead Resistance, Terminals − Chip
Module Weight
−
0.15
75
−
CC’+EE’
G
−
−
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2
VE−Tract Dual NVG600A75L4DSE2
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise specified)
VJ
Symbol
IGBT
Parameter
Rating
Unit
V
V
Collector to Emitter Voltage
Gate to Emitter Voltage
750
20
V
V
A
A
A
CES
GES
I
Implemented Collector Current
600
500
1200
CN
I
Continuous DC Collector Current, Tvjmax = 175°C, T = 65°C, Ref. Heatsink
C nom
F
I
Pulsed Collector Current @ VGE = 15 V, tp = 1 ms
CRM
DIODE
V
Repetitive Peak Reverse Voltage
Implemented Forward Current
750
600
V
A
A
A
RRM
I
FN
I
F
Continuous Forward Current, Tvjmax = 175°C, T = 65°C, Ref. Heatsink
400
F
I
Repetitive Peak Forward Current, t = 1 ms
1200
FRM
p
2
2
I t value
V
R
= 0 V, t = 10 ms, Tv = 150°C
14000
12000
A s
p
J
T
= 175°C
VJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Effective Rth, Junction to Case
Min
−
Typ
0.06
Max
0.08
−
Unit
°C/W
°C/W
IGBT.R
th,J−C
th,J−F
IGBT.R
Effective Rth, Junction to Fluid, l
= 6 W/m−K, F = 660 N
−
0.146
TIM
10 L/min, 65°C, 50/50 EGW, Ref. Heatsink
Diode.R
Diode.R
Effective Rth, Junction to Case
−
−
0.10
0.13
°C/W
°C/W
th,J−C
Effective Rth, Junction to Fluid, l
10 L/min, 65°C, 50/50 EGW, Ref. Heatsink
= 6 W/m−K, F = 660 N
0.196
−
th,J−F
TIM
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3
VE−Tract Dual NVG600A75L4DSE2
CHARACTERISTICS OF IGBT (Tvj = 25°C, unless otherwise specified)
Parameters
Conditions
= 15 V, I = 400 A,
Min
Typ
Max
unit
V
CESAT
Collector to Emitter Saturation Voltage
V
GE
T = 25°C
vj
−
−
−
1.23
1.28
1.30
1.35
−
−
V
C
T
= 150°C
= 175°C
vj
T
vj
V
GE
V
GE
= 15 V, I = 600 A,
T = 25°C
vj
−
−
−
1.39
1.53
1.57
−
−
−
C
T
= 150°C
= 175°C
vj
vj
T
I
Collector to Emitter Leakage Current
= 0, V = 750 V
T = 25°C
vj
−
−
−
8
1
−
mA
CES
CE
T
vj
= 175°C
I
Gate – Emitter Leakage Current
Threshold Voltage
V
V
V
= 0, V
=
20 V
−
4.5
−
−
400
6.5
−
nA
V
GES
CE
CE
GE
GE
V
th
= V , I = 500 mA
5.6
1.0
GE
C
Q
Total Gate Charge
= −8 to 15 V, V = 400 V,
= 400 A
mC
G
CE
I
C
R
Internal Gate Resistance
Input Capacitance
−
−
−
−
2
−
−
−
−
W
Gint
C
V
V
V
= 30 V, V = 0 V, f = 1 MHz
36
nF
nF
nF
ns
ies
CE
CE
CE
GE
C
Output Capacitance
= 30 V, V = 0 V, f = 1 MHz
0.7
0.09
oes
GE
C
Reverse Transfer Capacitance
Turn On Delay, Inductive Load
= 30 V, V = 0 V, f = 1 MHz
GE
res
T
d.on
I
= 400 A, V = 400 V
T
= 25°C
−
−
−
194
224
228
−
−
−
C
GE
CE
vj
V
= +15/−8 V
T
vj
T
vj
= 150°C
= 175°C
Rg.on = 3.9 W
T
Rise Time, Inductive Load
Turn Off Delay, Inductive Load
Fall Time, Inductive Load
I
= 400 A, V = 400 V
GE
T
= 25°C
−
−
−
71
89
94
−
−
−
ns
ns
ns
mJ
r
C
V
CE
vj
= +15/−8 V
T
vj
T
vj
= 150°C
= 175°C
Rg.on = 3.9 W
T
I
= 400 A, V = 400 V
T
= 25°C
= 150°C
= 175°C
−
−
−
969
1047
1063
−
−
−
d.off
C
CE
vj
V
= +15/−8 V
T
vj
T
vj
GE
Rg.off = 15 W
T
I
= 400 A, V = 400 V
T
= 25°C
= 150°C
= 175°C
−
−
−
123
202
230
−
−
−
f
C
CE
vj
V
= +15/−8 V
T
vj
T
vj
GE
Rg.off = 15 W
E
ON
Turn−On Switching Loss (Including
Diode Reverse Recovery Loss)
I
= 400 A, V = 400 V
T
= 25°C
= 150°C
= 175°C
−
−
−
10.09
16.73
18.57
−
−
−
C
CE
vj
V
= +15/−8 V
T
vj
T
vj
GE
Rg.on = 3.9 W
Ls = 25 nH
di/dt (T = 25°C) = 4.67 A/ns
di/dt (T = 175°C) = 3.61 A/ns
vj
vj
E
OFF
Turn−Off SwitchingLoss
I
= 400 A, V = 400 V
GE
T
= 25°C
−
−
−
15.95
25.06
27.30
−
−
−
mJ
C
V
CE
vj
= +15/−8 V
T
vj
T
vj
= 150°C
= 175°C
Rg.off = 15 W
Ls = 25 nH
dv/dt (T =25°C) = 2.82 V/ns
dv/dt (T =175°C) = 2.08 V/ns
vj
vj
Esc
Minimum Short Circuit Energy
Withstand
V
GE
≤ 15 V, V = 400 V
T
vj
= 25°C
−
3.5
3.5
−
−
−
J
CE
vj
T
= 175°C
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VE−Tract Dual NVG600A75L4DSE2
CHARACTERISTICS OF INVERSE DIODE (Tvj = 25°C, unless otherwise specified)
Parameters
Conditions
= 0 V, I = 400 A,
Min
Typ
Max
unit
V
F
Diode Forward Voltage
V
T = 25°C
vj
−
−
−
1.34
1.30
1.29
1.47
−
−
V
GE
GE
C
T
= 150°C
= 175°C
vj
vj
T
V
= 0 V, I = 600 A,
T
= 25°C
−
−
−
1.48
1.47
1.46
C
vj
T
= 150°C
= 175°C
−
−
vj
vj
T
E
Reverse Recovery Energy
Recovered Charge
V
= 400 V, I = 400 A,
GON
T = 25°C
vj
−
−
−
1.05
4.93
5.90
−
−
−
mJ
mC
A
rr
R
R
F
= 3.9 W,
T
= 150°C
= 175°C
vj
vj
−di/dt = 3.61 A/ns (175°C)
T
V
GE
= −8 V
Q
V
= 400 V, I = 400 A,
T = 25°C
vj
−
−
−
11.60
25.72
29.28
−
−
−
RR
R
F
R
= 3.9 W,
T
vj
= 150°C
= 150°C
GON
vj
−di/dt = 3.61 A/ns (175°C)
T
V
GE
= −8 V
Irr
Peak Reverse Recovery Current
V
= 400 V, I = 400 A,
T = 25°C
vj
−
−
−
241
294
304
−
−
−
R
F
R
= 3.9 W,
T
vj
= 150°C
= 175°C
GON
vj
−di/dt = 3.61 A/ns (175°C)
T
V
GE
= −8 V
SENSOR CHARACTERISTICS (Tvj = 25°C, unless otherwise specified)
Parameters
Conditions
Min
Typ
Max
unit
T
sense
Temperature Sense
I = 200 mA,
F
T =25°C
vj
vj
vj
−
−
−
2.159
1.300
1.186
−
−
−
V
T
T
= 150°C
= 175°C
I
Current Sense
R
= 0.62 W,
I = 1200 A
C
−
−
−
65
39
20
−
−
−
mV
sense
shunt
I
C
I
C
= 600 A
= 100 A
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VE−Tract Dual NVG600A75L4DSE2
TYPICAL CHARACTERISTICS
1200
1000
800
1200
V
GE
= 15 V
V
CE
= 20 V
T = 175°C
J
1000
800
600
400
T = 25°C
J
T = 150°C
J
T = 150°C
J
T = 175°C
J
600
400
200
0
200
0
T = 25°C
J
0
0.5
1
1.5
2
2.5
3
5
1
4
6
8
10
12
14
V
(V)
V
GE
(V)
CE
Figure 1. IGBT Output Characteristic
Figure 2. IGBT Transfer Characteristic
1200
1000
800
1200
1000
800
V
= 17 V
to 13 V
GE
V
GE
= 11 V
V
= 11 V
GE
V
= 17 V
to 13 V
GE
600
600
V
GE
= 9 V
V
GE
= 9 V
400
400
200
0
200
0
T = +175°C
J
T = +25°C
J
0
1
2
3
4
0
1
2
3
4
5
V
(V)
V
CE
(V)
CE
Figure 3. IGBT Output Characteristic, +255C
Figure 4. IGBT Output Characteristic, +1755C
15
10
5
100
10
Q
V
I
T
= 400 V,
= 400 A,
= 25°C
G
CE
C
ies
C
VJ
C
C
1
oes
0
res
0.10
0.01
−5
−10
V
T
= 0 V,
= 25°C
f = 1 MHz
GE
VJ
0
0.2
0.4
0.6
0.8
0
100
200
300
400
500
Q
(mC)
V
CE
(V)
G
Figure 5. Gate Charge Characteristics
Figure 6. Capacitance Characteristics
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VE−Tract Dual NVG600A75L4DSE2
TYPICAL CHARACTERISTICS
30
20
10
0
40
V
= +15/−8 V,
= 3.9 W
= 400 V
V
I
= +15/8 V,
= 400 A,
= 400 V
GE
GE
R
V
35
30
25
20
15
10
5
Gon
C
Eon, T = 175°C
J
V
CE
CE
Eon, T = 175°C
J
Eon, T = 150°C
Eon, T = 150°C
J
J
Eon, T = 25°C
J
Eon, T = 25°C
J
0
0
100
200
300
400
500
600
2
4
6
8
10
12
I
C
(A)
R
(W)
Gon
Figure 7. Eon vs. IC
Figure 8. EON vs. RGon
40
30
20
10
0
50
45
40
35
30
25
20
15
10
5
V
= +15/−8 V,
= 15 W
= 400 V
V
= +15/8 V,
= 400 V
GE
GE
= 400 A,
Eoff, T = 175°C
R
V
I
C
J
Goff
V
CE
CE
Eoff, T = 150°C
J
Eoff, T = 150°C
J
Eoff, T = 175°C
J
Eoff, T = 25°C
J
Eoff, T = 25°C
J
0
100
200
300
400
500
600
10
12
14
16
18
20
I
C
(A)
R
(W)
Goff
Figure 9. Eoff vs. IC
Figure 10. Eoff vs. RGoff
10000
1000
100
10
10000
T
, T = 175°C
J
d.off
T
T
, T = 25°C
J
d.off
1000
100
10
T
V
, T = 175°C
J
d.on
, T = 25°C
J
d.on
T , T = 175°C
r
J
T , T = 25°C
r
J
T , T = 175°C
f
J
T , T = 25°C
f
J
= +15/−8 V,
= 3.9 W
= 15 W
GE
V
GE
= +15/−8 V,
= 3.9 W
= 15 W
R
R
Gon
Goff
R
R
Gon
Goff
V
CE
= 400 V
V
CE
= 400 V
1
1
100
200
300
400
500
600
100
200
300
400
500
600
I
C
(A)
I (A)
C
Figure 11. IGBT Switching Times vs. IC,
Figure 12. IGBT Switching Times vs. IC,
T
VJ = 255C
T
VJ = 1755C
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VE−Tract Dual NVG600A75L4DSE2
TYPICAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
10000
Limited by VCE
1000
100
10
Module
Chip
100 ms
1 ms
10 ms
100 ms
V = +15/−8 V
GE
V
R
= +15/−8 V
GE
DC
R = 3.9 W
= 15 W
Gon
Goff
T = 25°C
VJ
T
VJ
= 150°C
1
1
10
100
1000
0
200
400
(V)
600
800
V
V
CE
(V)
CE
Figure 13. Reverse Bias Safe Operating Area
Figure 14. Forward Bias Safe Operating Area
1
1200
1000
800
600
400
200
0
10 L/Min, T = 65°C, 50/50 EGW,
f
T = 25°C
J
T = 175°C
J
Ref. Heatsink
0.1
Z
th,j−f
: IGBT
0.01
T = 150°C
J
0.001
1.00E−4
1.00E−3 1.00E−2 1.00E−1
1.00E+0 1.00E+1
0
0.5
1
1.5
2
TIME (s)
V (V)
F
Figure 15. IGBT Transient Thermal Impedance
Figure 16. Diode Forward Characteristic
10
8
8
R
V
= 3.9 W
= 400 V
I = 400 A
Gon
F
E , T = 175°C
rr
J
7
6
5
4
3
2
1
0
V
CE
= 400 V
CE
E , T = 150°C
rr
J
E , T = 150°C
rr
J
6
E , T = 175°C
rr
J
4
E , T = 25°C
2
rr
J
E , T = 25°C
rr
J
0
100
200
300
I (A)
400
500
600
0
2
4
6
8
10
12
R
(W)
Gon
F
Figure 17. Diode Switching Losses vs. IF
Figure 18. Diode Switching Losses vs. RGon
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VE−Tract Dual NVG600A75L4DSE2
TYPICAL CHARACTERISTICS
1
3
2.5
2
10L/Min, T = 65°C, 50/50 EGW,
f
y = −6.580E−03x + 2.334E+00
Ref. Heatsink
0.1
200 mA Temp
Z
th,j−f
: Diode
1.5
1
0.01
0.5
0.001
0
−40
1.00E−4 1.00E−3 1.00E−2 1.00E−1
1.00E+0 1.00E+1
0
40
80
120
160
TIME (s)
TEMPERATURE (°C)
Figure 19. Diode Transient Thermal Impedance
Figure 20. Temperature Sensor Characteristic
775
750
725
700
70
60
50
40
30
20
10
0
y = 0.042x + 14.394
R
= 0.62 W
shunt
675
650
I
I
= 1 mA, T ≤ 25°C,
VJ
CES
CES
= 30 mA, T > 25°C
VJ
100
300
500
700
(A)
900
1100
1300
−40
20
80
(°C)
140
200
I
T
VJ
C
Figure 21. Current Sensor Characteristic
Figure 22. Maximum Allowed VCE
General Note: These are preliminary values measured from a small number of DV units. Values will be updated based on higher
quantity of PV measurements.
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VE−Tract Dual NVG600A75L4DSE2
ORDERING INFORMATION
Part Number
Package
Shipping
NVG600A75L4DSE2
AHPM15−CFA Module,
Case MODHQ (Pb−Free)
36 Units / 2x Blister Tray
VE−Trac is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
AHPM15−CFA MODULE
CASE MODHQ
ISSUE A
DATE 11 JUN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON31793H
AHPM15−CFA MODULE
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
AHPM15−CFA MODULE
CASE MODHQ
ISSUE A
DATE 11 JUN 2021
GENERIC
MARKING DIAGRAM*
ZZZ = Assembly Lot Code
AT
Y
= Assembly & Test Location
= Year
WW = Work Week
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON31793H
AHPM15−CFA MODULE
PAGE 2 OF 2
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