NVG800A75L4DSC [ONSEMI]
VE-Trac Dual - Dual Side Cooling Half-Bridge Power Module for Automotive, 750V, 800A, 90° Power Tabs;
| 型号： | NVG800A75L4DSC |
| 厂家： | 
ONSEMI |
| 描述： | VE-Trac Dual - Dual Side Cooling Half-Bridge Power Module for Automotive, 750V, 800A, 90° Power Tabs |
| 文件： | 总11页 (文件大小：522K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Automotive 750 V, 800 A
Dual Side Cooling
Half-Bridge Power Module
VE-Tract Dual
NVG800A75L4DSC
Product Description
The NVG800A75L4DSC is part of a family of power modules with
dual side cooling and compact footprints for Hybrid (HEV) and
Electric Vehicle (EV) traction inverter application.
AHPM15−CEA
CASE 100DD
The module consists of two Field Stop 4 (FS4) 750 V Narrow Mesa
IGBTs in a half−bridge configuration. The chipset utilizes the new
narrow mesa IGBT technology in providing high current density and
robust short circuit protection with higher blocking voltage to deliver
outstanding performance in EV traction applications.
Features
• Dual−Side Cooling
• Integrated Chip Level Temperature and Current Sensor
• T
= 175°C for Continuous Operation
vj max
• Ultra−low stray inductance
• Low V and Switching Losses
CESAT
• Automotive Grade FS4 & Fast Diode Chip Technologies
• 4.2 kV Isolated DBC Substrate
• AEC Qualified and PPAP Capable
• This Device is Pb−Free and is RoHS Compliant
Typical Applications
• Hybrid and Electric Vehicle Traction Inverter
• High Power DC−DC Converter
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
August 2021 − Rev. 4
NVG800A75L4DSC/D
VE−Tract Dual NVG800A75L4DSC
PIN DESCRIPTION
Pin #
Pin
N
Pin Function Description
Low Side Emitter
Pin Arrangement
1
2
P
High Side Collector
3
4
H/S COLLECTOR SENSE
H/S CURRENT SENSE
H/S EMITTER SENSE
H/S GATE
High Side Collector Sense
High Side Current Sense
High Side Emitter Sense
High Side Gate
5
6
7
H/S TEMP SENSE (CATHODE)
H/S TEMP SENSE (ANODE)
~
High Side Temp sense Diode Cathode
High Side Temp sense Diode Anode
Phase Output
8
9
10
11
12
13
14
15
L/S CURRENT SENSE
L/S EMITTER SENSE
L/S GATE
Low Side Current Sense
Low Side Emitter Sense
Low Side Gate
L/S TEMP SENSE (CATHODE)
L/S TEMP SENSE (ANODE)
L/S COLLECTOR SENSE
Low Side Temp sense Diode Cathode
Low Side Temp sense Diode Anode
Low Side Collector Sense
Materials
DBC Substrate: Al O isolated substrate, basic isolation,
2
3
and copper on both sides
Lead Frame: Copper with Tin electro−plating
Flammability Information
All materials present in the power module meet UL
flammability rating class 94V−0
MODULE CHARACTERISTICS
Symbol
Parameter
Rating
−40 to 175
−40 to 125
4200
6.2
Unit
°C
T
vj
Continuous Operating Junction Temperature range
Storage Temperature range
Isolation Voltage, DC, t = 1 s
Terminal to Terminal
T
STG
°C
V
ISO
V
Creepage
mm
mm
−
Clearance
CTI
Terminal to Terminal
3.4
Comparative tracking index
>600
Max
Min
Typ
L
Stray Inductance
8
nH
mW
g
sCE
R
Module lead resistance, terminals − chip
Module weight
0.15
CC’+EE’
G
75
M
M4 screws for module terminals
2.2
Nm
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2
VE−Tract Dual NVG800A75L4DSC
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless Otherwise Specified)
VJ
Symbol
Parameter
Rating
Unit
IGBT
V
V
Collector to Emitter Voltage
Gate to Emitter Voltage
750
20
V
V
A
A
CES
GES
800
I
Implemented Collector Current
CN
(1)
550
I
Continuous DC Collector Current, Tv
heatsink
= 175°C, T = 65°C, ref.
Jmax F
C nom
1600
I
Pulsed Collector Current @ VGE = 15 V, t = 1 ms
A
CRM
p
Diode
V
Repetitive peak reverse voltage
Implemented Forward Current
750
800
V
A
A
RRM
I
FN
(1)
420
I
F
Continuous Forward Current, Tv
= 175°C, T = 65°C, ref. heatsink
Jmax F
1600
I
Repetitive Peak Forward Current, t = 1 ms
A
FRM
p
2
2
20000
18000
I t value
Surge current capability, V = 0 V, t = 10 ms, Tv = 150°C
A s
R
p
J
T
= 175°C
VJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Verified by characterization, not by test.
THERMAL CHARACTERISTICS (Verified by characterization, not by test.)
Symbol
Parameter
Min
Typ
Max
Unit
°C/W
°C/W
(2)
IGBT.R
Effective Rth, Junction to Case
0.05
0.07
th,J−C
IGBT.R
Effective Rth, Junction to Fluid, l
= 6 W/m−K, F = 660 N
0.14
th,J−F
TIM
10 L/min, 65°C, 50/50 EGW, Ref. Heatsink
(2)
Diode.R
Diode.R
Effective Rth, Junction to Case
0.08
0.21
0.10
°C/W
°C/W
th,J−C
Effective Rth, Junction to Fluid, l
= 6 W/m−K, F = 660 N
th,J−F
TIM
10 L/min, 65°C, 50/50 EGW, Ref. Heatsink
2. For the measurement point of case temperature (Tc), DBC discoloration, picker circle print is allowed, please refer to the VE−Trac Dual
assembly guide for additional details about acceptable DBC surface finish.
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VE−Tract Dual NVG800A75L4DSC
CHARACTERISTICS OF IGBT (Tvj = 25°C, Unless Otherwise Specified)
Parameters
Conditions
Min
Typ
Max
Unit
Collector to Emitter Saturation
Voltage
(Terminal)
V
= 15 V, I = 600 A, Tv = 25°C
1.30
1.42
1.45
V
CESAT
GE
GE
C
J
−
1.55
V
Tv = 150°C
J
Tv = 175°C
J
V
= 15 V, I = 800 A, Tv = 25°C
1.44
1.64
1.68
C
J
Tv = 150°C
J
Tv = 175°C
J
I
Collector to Emitter Leakage
Current
CES
V
V
= 0, V = 750 V
Tv = 25°C
Tv = 175°C
J
−
−
−
8
1
−
mA
mA
GE
CE
J
I
GES
Gate – Emitter Leakage Current
= 0, V
=
20 V
−
4.6
−
−
5.5
1.9
2
400
6.2
−
nA
V
CE
GE
V
th
Threshold Voltage
Total Gate Charge
V
V
V
, I = 500 mA
C
CE= GE
−8 to 15 V, V = 400 V
Q
GE=
CE
G
mC
W
Internal gate resistance
Input Capacitance
R
C
Gint
−
−
V
V
V
I
= 30 V, V = 0 V, f = 1 MHz
C
CE
CE
CE
GE
ies
−
48
−
−
nF
nF
nF
ns
Output Capacitance
= 30 V, V = 0 V, f = 1 MHz
1.37
GE
oes
−
Reverse Transfer Capacitance
Turn on delay, inductive load
= 30 V, V = 0 V, f = 1 MHz
0.15
−
−
C
GE
res
−
= 600 A, V = 400 V
Tv = 25°C
253
283
287
T
C
CE
J
d.on
−
V
GE
= +15/−8 V
Tv = 150°C
J
Rg.on = 4.7 W
Tv = 175°C
J
Rise time, inductive load
Turn off delay, inductive load
Fall time, inductive load
I
V
= 600 A, V = 400 V
Tv = 25°C
94
112
117
−
−
−
−
T
C
CE
J
r
−
−
−
−
ns
ns
ns
mJ
= +15/−8 V
Tv = 150°C
GE
J
Rg.on = 4.7 W
Tv = 175°C
J
I
C
= 600 A, V = 400 V
Tv = 25°C
760
790
800
T
CE
J
d.off
V
= +15/−8 V
Tv = 150°C
GE
J
Rg.off = 15 W
Tv = 175°C
J
I = 600 A, V = 400 V
Tv = 25°C
95
140
153
T
C
CE
J
f
V
= +15/−8 V
Tv = 150°C
GE
J
Rg.off = 15 W
Tv = 175°C
J
Turn−On Switching Loss (including
diode reverse recovery loss)
I = 600 A, V = 400 V, V = +15/−8 V,
C CE GE
E
ON
Ls = 20 nH, Rg.on = 4,7 W
di/dt (Tv = 25°C) = 5.13 A/ns
J
J
di/dt (Tv = 175°C) = 4.11 A/ns
Tv = 25°C
J
22.41
33.30
36.35
Tv = 150°C
J
Tv = 175°C
J
I
= 600 A, V = 400 V, V = +15/−8 V,
−
E
OFF
C
CE
GE
Turn−Off Switching Loss
−
mJ
Ls = 20 nH, Rg.off = 15 W
dv/dt (Tv = 25°C) = 2.81 V/ns
J
J
dv/dt (Tv = 175°C) = 2.11 V/ns
Tv = 25°C
J
27.22
37.19
39.09
Tv = 150°C
J
Tv = 175°C
J
V
GE
= 15 V, V = 400 V
E
SC
CC
Minimum Short Circuit Energy
Withstand
J
Tv = 25°C
Tv = 175°C
J
J
5
7.5
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VE−Tract Dual NVG800A75L4DSC
CHARACTERISTICS OF INVERSE DIODE (T = 25°C, Unless Otherwise Specified)
VJ
Parameters
Conditions
= 0 V, I = 600 A,
Min
Typ
Max
Unit
V
F
Diode Forward Voltage (Terminal)
V
V
Tv = 25°C
−
1.40
1.30
1.30
1.60
V
GE
C
J
Tv = 150°C
J
Tv = 175°C
J
= 0 V, I = 800 A,
Tv = 25°C
1.48
1.44
1.42
GE
C
J
Tv = 150°C
J
Tv = 175°C
J
I = 600 A, V = 400 V, V = −8 V,
E
F
R
GE
rr
Reverse Recovery Energy
Recovered Charge
−
−
−
−
−
−
mJ
mC
A
Rg.on = 4.7 W , −di/dt = 3.12 A/ns (175°C)
Tv = 25°C
J
4.09
10.93
11.92
Tv = 150°C
J
Tv = 175°C
J
I = 600 A, V = 400 V, V = −8 V,
Q
F
R
GE
RR
Rg.on = 4.7 W , −di/dt = 3.12 A/ns (175°C)
Tv = 25°C
J
18.70
44.48
48.40
Tv = 150°C
J
Tv = 175°C
J
I = 600 A, V = 400 V, V = −8 V,
Irr
F
R
GE
Peak Reverse Recovery Current
Rg.on = 4.7 W , −di/dt = 3.12 A/ns (175°C)
Tv = 25°C
J
248
331
337
Tv = 150°C
J
Tv = 175°C
J
SENSOR CHARACTERISTICS (T = 25°C, Unless Otherwise Specified)
VJ
Parameters
Conditions
Min
Typ
Max
Unit
T
sense
Temperature sense
I = 1 mA,
F
Tv = −40°C
2.96
2.54
1.76
1.61
V
J
(3)
(3)
Tv = 25°C
2.46
2.60
J
Tv = 150°C
J
Tv = 175°C
J
I
Current sense
sense
R
R
= 5 W
I
I
I
= 1600 A
= 800 A
= 100 A
379
200
43.0
mV
shunt
shunt
C
C
C
644
351
94.0
= 20 W
I
C
I
C
I
C
= 1600 A
= 800 A
= 100 A
3. Measured at chip level
ORDERING INFORMATION
Part Number
Device Marking
Package
Shipping
6 Units / Tube
NVG800A75L4DSC
N875DSC
AHPM15−CEA
(Pb−Free)
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VE−Tract Dual NVG800A75L4DSC
TYPICAL CHARACTERISTICS
1600
1600
1400
1200
1000
800
V
GE
= 15 V
V
CE
= 20 V
T = 25°C
J
1400
1200
1000
800
T = 175°C
J
T = 150°C
J
600
600
T = 150°C
J
400
400
200
0
200
0
T = 175°C
J
T = 25°C
J
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
2
4
6
8
10
12
V
(V)
V
GE
(V)
CE
Figure 1. IGBT Output Characteristic
Figure 2. IGBT Output Characteristic
1600
1400
1200
1000
800
1600
1400
1200
1000
800
V
GE
= 17 V
V
GE
= 13 V
V
GE
= 17 V
V
= 13 V
GE
V
= 11 V
GE
V
GE
= 15 V
V
GE
= 15 V
V
= 11 V
GE
V
GE
= 9 V
V
GE
= 9 V
600
600
400
400
200
0
200
0
T = 175°C
T = 25°C
J
J
1
2
3
4
5
0
1
2
3
4
5
V
(V)
V
CE
(V)
CE
Figure 3. IGBT Output Characteristic
Figure 4. IGBT Output Characteristic
15
10
5
100
10
Q
G
C
ies
0
C
oes
1
V
I
T
= 400 V,
= 600 A,
= 25°C
CE
−5
C
C
res
vj
−10
0.1
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
Q
(mC)
V
CE
(V)
G
Figure 5. Gate Charge Characteristic
Figure 6. Capacitance Characteristic
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VE−Tract Dual NVG800A75L4DSC
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
80
70
60
Eon, T = 175°C
J
V
= +15/−8 V,
= 4.7 W,
GE
R
R
V
Gon
= 15 W,
Eon, T = 150°C
Goff
J
= 400 V
Eon, T = 175°C
CE
J
50
40
Eon, T = 25°C
J
Eon, T = 150°C
J
30
Eon, T = 25°C
J
20
V
= +15/−8 V,
GE
I
V
= 600 A,
C
10
0
10
0
= 400 V
CE
100 200
300
400
500
(A)
600
700
800
0
5
10
(W)
15
20
I
C
R
G
Figure 7. EON vs. IC
Figure 8. EON vs. RG
50
45
40
35
30
25
20
15
10
70
60
50
40
30
20
V
= +15/−8 V,
GE
R
R
V
= 4.7 W,
= 15 W,
Gon
Goff
Eoff, T = 175°C
J
Eoff, T = 150°C
J
Eoff, T = 175°C
J
= 400 V
CE
Eoff, T = 25°C
J
Eoff, T = 25°C
J
V
I
= +15/−8 V,
= 600 A
GE
10
0
C
5
0
Eoff, T = 150°C
V
CE
= 400 V
J
100 200
300
400
500
(A)
600
700
800
10
15
20
(W)
25
30
I
C
R
G
Figure 9. EOFF vs. IC
Figure 10. EOFF vs. RG
10K
1K
10K
1K
t
t
d(off)
d(off)
t
f
t
d(on)
t
d(on)
t
f
100
100
t
r
t
r
V
R
R
= +15/−8 V,
= 4.7 W,
= 15 W,
V
= +15/−8 V,
= 4.7 W,
GE
GE
10
1
10
1
R
R
V
Gon
Gon
= 15 W,
Goff
Goff
V
CE
= 400 V
= 400 V
CE
100
200
300
400
I
500
(A)
600
700
800
100
200
300
400
500
(A)
C
600
700
800
I
C
Figure 11. IGBT Switching Times vs. IC,
Figure 12. IGBT Switching Times vs. IC,
T
VJ = 255C
T
VJ = 1755C
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VE−Tract Dual NVG800A75L4DSC
TYPICAL CHARACTERISTICS
1800
1600
1400
1200
1000
800
1
10 L/Min, T = 65°C, 50/50 EGW,
Chip
f
Ref. Cooler Heatsink
Z
th,j−f
: IGBT
Module
0.1
600
0.01
i:
1
2
3
4
V
R
= +15/−8 V,
400
GE
R
[K/W]: 0.019 0.089 0.005 0.028
th
= 15 W,
Goff
200
0
t
th
[s]:
0.002 0.457 0.001 0.050
T
vj
= 150°C
0.001
0
200
400
(V)
600
800
0.0001
0.001
0.01
TIME (s)
0.1
1
10
V
CE
Figure 13. Reverse Bias Safe Operating Area
Figure 14. IGBT Transient Thermal Impedance
1600
1400
1200
1000
800
18
16
14
12
10
8
R
= 4.7 W
= 400 V
Gon
V
CE
Err, T = 175°C
J
Err, T = 150°C
J
T = 150°C
J
600
6
Err, T = 25°C
J
400
4
200
0
2
0
T = 175°C
T = 25°C
J
J
0
0.5
1.0
V (V)
1.5
2.0
100
200
300
400
500
600
700 800
I (A)
F
F
Figure 15. Diode Forward Characteristic
Figure 16. Diode Switching Losses vs. IF
1
25
20
15
I = 600 A
10 L/Min, T = 65°C, 50/50 EGW,
F
f
V
CE
= 400 V
Ref. Cooler Heatsink
Z
th,j−f
: Diode
Err, T = 175°C
J
0.1
Err, T = 150°C
J
10
0.01
i:
1
2
3
4
5
0
R
[K/W]: 0.034 0.116 0.008 0.051
th
Err, T = 25°C
J
t
th
[s]:
0.002 0.410 0.001 0.041
0.001
0.0001
0.001
0.01
TIME (s)
0.1
1
10
0
5
10
15
R
(W)
G
Figure 17. Diode Switching Losses vs. RG
Figure 18. Diode Transient Thermal Impedance
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VE−Tract Dual NVG800A75L4DSC
TYPICAL CHARACTERISTICS
3.5
3.0
2.5
2.0
1.5
1.0
500
I
= 1 mA
bias
175°C
25°C
R
= 5 W
Shunt
150°C
400
300
200
100
0
0.5
0
y = 0.2243x+20.179
1200 1600
y = −0.0063x+2.7085
110 160
TEMPERATURE (°C)
−40
10
60
0
400
800
(A)
I
C
Figure 19. Temperature Sensor Characteristic
Figure 20. Current Sensor Characteristic
900
800
700
600
500
400
300
200
775
750
725
700
175°C
R
= 20 W
Shunt
150°C
25°C
I
T
= 1 mA,
≤ 25°C,
= 30 mA,
≤ 25°C
CES
vj
675
650
I
CES
Verified by characteriza-
tion / design, not by test.
100
0
T
vj
y = 0.367x+57.267
0
400
800
(A)
1200
1600
−40
20
80
(°C)
140
200
I
T
vj
C
Figure 21. Current Sensor Characteristic
Figure 22. Maximum Allowed VCE
VE−Trac is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
AHPM15−CEA
CASE 100DD
ISSUE B
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
ZZZ = Assembly Lot Code
AT
Y
= Assembly & Test Site Code
= Year
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
XXXX = Specific Device Code
NNN = Serial Number
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON86580G
AHPM15−CEA
PAGE 1 OF 1
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