NVD5C434N [ONSEMI]
Power MOSFET;
ONSEMI 
NVD5C434N
Power MOSFET
40 V, 2.1 mW, 163 A, Single N−Channel
Features
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
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• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
I
D
(BR)DSS
DS(on)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
40 V
2.1 mW @ 10 V
163 A
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
D
Gate−to−Source Voltage
Continuous Drain Cur-
V
"20
163
115
117
58
V
GS
T
= 25°C
= 100°C
= 25°C
I
A
C
D
rent R
(Notes 1 & 3)
q
JC
T
C
Steady
State
G
Power Dissipation R
(Note 1)
T
C
P
W
A
q
D
JC
T
C
= 100°C
S
N−CHANNEL MOSFET
Continuous Drain
Current R
T = 25°C
A
I
26
D
q
JA
T = 100°C
A
22
(Notes 1, 2 & 3)
Steady
State
4
Power Dissipation R
(Notes 1 & 2)
T = 25°C
A
P
3.2
W
q
D
JA
T = 100°C
A
2.2
2
1
3
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
A
p
DPAK
CASE 369C
STYLE 2
Operating Junction and Storage Temperature
T , T
−55 to
175
°C
J
stg
Source Current (Body Diode)
I
S
130
420
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
MARKING DIAGRAM
& PIN ASSIGNMENT
Energy (T = 25°C, I
= 25 A)
J
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
4
Drain
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.28
48
Unit
2
Drain
Junction−to−Case (Drain) (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
1
3
q
JC
JA
Gate Source
R
q
A
Y
WW
= Assembly Location
= Year
= Work Week
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
2
5C434N= Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
January, 2017 − Rev. 0
NVD5C434N/D
NVD5C434N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
18
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
mA
T = 25°C
10
DSS
J
V
V
= 0 V,
= 40 V
GS
DS
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 250 mA
2.0
4.0
2.1
V
mV/°C
mW
S
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
V
/T
J
7.9
1.7
155
GS(TH)
R
V
= 10 V, I = 50 A
DS(on)
GS D
g
V
= 3 V, I = 50 A
FS
DS D
CHARGES, CAPACITANCES AND GATE RESISTANCES
pF
nC
Input Capacitance
C
5400
3000
71
iss
V
= 0 V, f = 1.0 MHz,
GS
Output Capacitance
C
oss
V
DS
= 25 V
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
80.6
15.2
25.2
15.4
4.8
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
V
GS
= 10 V, V = 32 V,
DS
Q
GS
GD
GP
I
D
= 50 A
Q
V
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
ns
t
15
78
43
14
d(on)
Rise Time
t
r
V
I
= 10 V, V = 32 V,
DS
GS
= 50 A, R = 2.5 W
D
G
Turn−Off Delay Time
t
d(off)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
T = 25°C
0.8
0.7
73
1.2
SD
J
V
= 0 V,
= 50 A
GS
I
S
T = 125°C
J
ns
Reverse Recovery Time
Charge Time
t
RR
ta
36
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 50 A
Discharge Time
tb
37
Reverse Recovery Charge
Q
120
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVD5C434N
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
400
V
= 8 V
6.0 V
GS
V
DS
= 3 V
to 10 V
350
300
250
200
150
100
5.4 V
5.2 V
5.0 V
4.8 V
T = 25°C
J
100
50
0
.
4.6 V
4.4 V
50
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
12
10
8
2.0
1.8
1.6
1.4
T = 25°C
J
T = 25°C
D
J
I
= 50 A
V
GS
= 10 V
6
4
1.2
1.0
2
0
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
10000
1000
100
2.0
1.8
1.6
1.4
1.2
1.0
T = 150°C
J
V
= 10 V
= 50 A
GS
I
D
T = 125°C
J
T = 85°C
J
T = 25°C
J
10
1
0.8
0.6
0.1
0.01
5
10
V
15
20
25
30
35
40
−50 −25
0
25
50
75 100 125 150
175
T , JUNCTION TEMPERATURE (°C)
, DRAIN−TO−SOURCE VOLTAGE (V)
J
DS
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVD5C434N
TYPICAL CHARACTERISTICS
10
10000
1000
C
ISS
9
8
7
6
5
4
3
2
C
OSS
Q
Q
GD
GS
100
10
C
V
DS
= 32 V
RSS
V
= 0 V
GS
T = 25°C
J
T = 25°C
J
1
0
I
D
= 50 A
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
100
V
V
= 10 V
= 32 V
= 50 A
V
= 0 V
GS
GS
DS
I
D
t
t
r
d(off)
d(on)
10
t
t
10
1
f
T = 125°C
T = 25°C T = −55°C
J
J
J
1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
T
V
= 25°C
≤ 10 V
C
GS
Single Pulse
T (initial) = 25°C
J
100
10
T (initial) = 100°C
J
10
10 ms
0.5 ms
1 ms
1
R
Limit
DS(on)
10 ms
Thermal Limit
Package Limit
1
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVD5C434N
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
0.01
Single Pulse
0.001
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
10000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
ORDERING INFORMATION
Order Number
†
Package
Shipping
NVD5C434NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVD5C434N
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
NOTES:
ISSUE F
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
A
D
E
C
A
b3
B
c2
4
2
L3
L4
Z
DETAIL A
H
1
3
7. OPTIONAL MOLD FEATURE.
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
NOTE 7
MIN
2.18
0.00
0.63
0.72
4.57
0.46
0.46
5.97
6.35
2.29 BSC
9.40 10.41
1.40 1.78
2.90 REF
0.51 BSC
0.89 1.27
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
c
b2
e
BOTTOM VIEW
A
SIDE VIEW
b
b
b2 0.028 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
TOP VIEW
c
0.018 0.024
c2 0.018 0.024
Z
Z
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
H
GAUGE
PLANE
SEATING
PLANE
H
L
L1
L2
0.370 0.410
0.055 0.070
0.114 REF
L2
C
0.020 BSC
L3 0.035 0.050
L
BOTTOM VIEW
A1
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
L1
ALTERNATE
CONSTRUCTIONS
DETAIL A
ROTATED 905 CW
STYLE 2:
PIN 1. GATE
2. DRAIN
SOLDERING FOOTPRINT*
3. SOURCE
4. DRAIN
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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