NVD5C460NT4G [ONSEMI]
单 N 沟道,功率 MOSFET,40V,70A,4.9mΩ;型号: | NVD5C460NT4G |
厂家: | ONSEMI |
描述: | 单 N 沟道,功率 MOSFET,40V,70A,4.9mΩ |
文件: | 总7页 (文件大小:230K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NVD5C460N
MOSFET – Power, Single,
N-Channel
40 V, 4.9 mW, 70 A
Features
• Low R
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to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
I
D
(BR)DSS
DS(on)
40 V
4.9 mW @ 10 V
70 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
D
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Gate−to−Source Voltage
V
"20
70
V
GS
G
Continuous Drain Cur-
T
= 25°C
= 100°C
= 25°C
I
A
C
D
rent R
(Notes 1 & 3)
q
JC
T
C
50
Steady
State
S
Power Dissipation R
(Note 1)
T
C
P
47
W
A
q
D
JC
N−CHANNEL MOSFET
T
C
= 100°C
23
Continuous Drain
Current R
T = 25°C
A
I
18
D
4
q
JA
T = 100°C
A
13
(Notes 1, 2 & 3)
Steady
State
2
1
Power Dissipation R
(Notes 1 & 2)
T = 25°C
A
P
3.0
1.5
379
W
q
D
JA
3
T = 100°C
A
DPAK
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
CASE 369C
STYLE 2
Operating Junction and Storage Temperature
T , T
−55 to
175
°C
J
stg
Source Current (Body Diode)
I
39
A
S
MARKING DIAGRAM
& PIN ASSIGNMENT
Single Pulse Drain−to−Source Avalanche
E
AS
147
mJ
Energy (T = 25°C, I
= 6.5 A)
J
L(pk)
4
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
Drain
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
2
Drain
Parameter
Symbol
Value
Unit
1
3
Gate Source
Junction−to−Case (Drain) (Note 1)
R
3.2
°C/W
q
JC
A
Y
WW
= Assembly Location
= Year
= Work Week
Junction−to−Ambient − Steady State (Note 2)
R
48.6
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
5C460N= Device Code
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
G
= Pb−Free Package
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
June, 2019 − Rev. 0
NVD5C460N/D
NVD5C460N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
20
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
mA
T = 25°C
10
DSS
J
V
= 0 V,
GS
DS
V
= 40 V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 60 mA
2.0
4.0
4.9
V
mV/°C
mW
S
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
V
/T
J
6.8
4.2
62
GS(TH)
R
V
= 10 V, I = 25 A
DS(on)
GS D
g
V
= 3 V, I = 25 A
FS
DS D
CHARGES, CAPACITANCES AND GATE RESISTANCES
pF
nC
Input Capacitance
C
1600
800
38
iss
V
GS
= 0 V, f = 1.0 MHz,
DS
Output Capacitance
C
oss
V
= 25 V
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
26
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
4.7
7.5
5.1
4.6
G(TH)
V
V
= 10 V, V = 32 V,
DS
GS
Q
GS
GD
GP
I
= 25 A
D
Q
V
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
ns
t
11
27
21
5
d(on)
Rise Time
t
r
= 10 V, V = 32 V,
GS
DS
I
D
= 25 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(off)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
T = 25°C
0.85
0.73
30
1.2
SD
J
V
S
= 0 V,
GS
I
= 25 A
T = 125°C
J
ns
Reverse Recovery Time
Charge Time
t
RR
ta
15
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 25 A
Discharge Time
tb
15
Reverse Recovery Charge
Q
10
nC
RR
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVD5C460N
TYPICAL CHARACTERISTICS
V
= 7 V to 10 V
GS
100
100.0
80.0
60.0
40.0
20.0
0.0
5.7 V
V
DS
= 3 V
80
60
40
20
0
5.3 V
4.9 V
T = 25°C
J
4.5 V
4.1 V
T = 125°C
J
T = −55°C
J
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
8
7
6
5
4
3
8
T = 25°C
J
T = 25°C
D
J
I
= 25 A
7
6
5
4
3
V
= 10 V
GS
5
10
15
I , DRAIN CURRENT (A)
20
25
5
6
7
8
9
10
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2
100k
10k
V
I
= 10 V
= 25 A
T = 175°C
J
GS
T = 150°C
J
D
T = 125°C
J
1.5
1k
T = 85°C
J
100.00
10.00
1.00
0.10
0.01
T = 25°C
J
0.5
0
5
10
15
20
25
30
35
40
−50 −25
0
25
50
75
100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVD5C460N
TYPICAL CHARACTERISTICS
10,000
1,000
100
10
V
= 32 V
= 25 A
DS
9
8
7
6
5
4
3
2
1
0
I
D
C
ISS
T = 25°C
J
C
OSS
Q
Q
GD
GS
C
RSS
V
= 0 V
GS
T = 25°C
J
f = 1 MHz
10
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
10
1
1000
100
10
V
V
= 10 V
= 32 V
= 25 A
V
GS
= 0 V
GS
DS
I
D
t
d(off)
t
f
T = 125°C
J
t
r
t
d(on)
T = 25°C
J
T = −55°C
J
1
0.1
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1
1
10
R , GATE RESISTANCE (W)
100
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
V
≤ 10 V
GS
Single Pulse
= 25°C
T
C
10 ms
T
= 25°C
J(initial)
10
T
= 100°C
J(initial)
0.5 ms
1 ms
1
R
Limit
DS(on)
10 ms
Thermal Limit
Package Limit
1
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVD5C460N
TYPICAL CHARACTERISTICS
100
10
Duty Cycle = 50%
20%
10%
5%
2%
1%
1
Single Pulse
0.1
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
ORDERING INFORMATION
Order Number
†
Package
Shipping
NVD5C460NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
4
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE G
2
1
DATE 31 MAY 2023
3
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
XXXXXX = Device Code
A
= Assembly Location
L
= Wafer Lot
STYLE 1:
STYLE 2:
PIN 1. GATE
2. DRAIN
STYLE 3:
STYLE 4:
STYLE 5:
Y
WW
G
= Year
= Work Week
= Pb−Free Package
PIN 1. BASE
PIN 1. ANODE
2. CATHODE
3. ANODE
PIN 1. CATHODE
2. ANODE
3. GATE
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
2. COLLECTOR
3. EMITTER
3. SOURCE
4. DRAIN
4. COLLECTOR
4. CATHODE
4. ANODE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 6:
PIN 1. MT1
2. MT2
STYLE 7:
PIN 1. GATE
STYLE 8:
PIN 1. N/C
STYLE 9:
PIN 1. ANODE
2. CATHODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
2. COLLECTOR
2. CATHODE
3. GATE
4. MT2
3. EMITTER
4. COLLECTOR
3. ANODE
4. CATHODE
3. RESISTOR ADJUST
4. CATHODE
3. CATHODE
4. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
PAGE 1 OF 1
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