NVBG095N065SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET - EliteSiC, 70 mohm, 650 V, M2, D2PAK−7L;
| 型号： | NVBG095N065SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET - EliteSiC, 70 mohm, 650 V, M2, D2PAK−7L |
| 文件： | 总8页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – 70 mohm, 650ꢀV,
M2, D2PAK-7L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
650 V
105 mꢀ @ 18 V
30 A
Drain (TAB)
NVBG095N065SC1
Features
• Typ. R
= 70 mꢀ @ V = 18 V
GS
= 95 mꢀ @ V = 15 V
GS
Gate (Pin 1)
DS(on)
Typ. R
DS(on)
• Ultra Low Gate Charge (Q
= 50 nC)
G(tot)
Driver Source (Pin 2)
• Low Output Capacitance (C = 89 pF)
oss
Power Source (Pins 3, 4, 5, 6, 7)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• RoHS Compliant
N−CHANNEL MOSFET
Typical Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for EV/HEV
D
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
7
J
Parameter
Drain−to−Source Voltage
Symbol
Value
650
Unit
V
D2PAK−7L
CASE 418BJ
V
DSS
Gate−to−Source Voltage
V
−8/+22
−5/+18
V
GS
MARKING DIAGRAM
Recommended Operation Val-
ues of Gate − Source Voltage
T
< 175°C
= 25°C
V
GSop
V
C
BG095N
065SC1
AYWWZZ
Continuous Drain
Current (Note 2)
Steady
State
T
I
30
110
21
A
W
A
C
D
Power Dissipation
(Note 2)
P
D
BG095N065SC1 = Specific Device Code
Continuous Drain
Current (Notes 1, 2)
Steady
State
T
C
= 100°C
I
D
A
Y
= Assembly Location
= Year
Power Dissipation
(Notes 1, 2)
P
D
55
W
WW = Work Week
ZZ
= Lot Traceability
Pulsed Drain Current (Note 3)
T
C
= 25°C
I
79
A
DM
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
+175
Source Current (Body Diode)
I
S
24
44
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I = 9.4 A , L = 1 mH) (Note 4)
L
pk
Maximum Lead Temperature for Soldering, 1/8″
from Case for 10 Seconds
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. Repetitive rating, limited by max junction temperature.
4. E of 44 mJ is based on starting T = 25°C; L = 1 mH, I = 9.4 A,
AS
DD
J
AS
V
= 50 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
August, 2022 − Rev. 0
NVBG095N065SC1/D
NVBG095N065SC1
THERMAL CHARACTERISTICS
Parameter
Symbol
Typ
1.36
−
Max
−
Units
°C/W
°C/W
Thermal Resistance Junction−to−Case (Note 2)
Thermal Resistance Junction−to−Ambient (Notes 1, 2)
R
θ
JC
JA
R
40
θ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
650
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 20 mA, refer to 25°C
D
0.15
V/°C
(BR)DSS
(Note 5)
Zero Gate Voltage Drain Current
I
V
= 0 V
= 650 V
T = 25°C
10
1
ꢁ
A
DSS
GS
J
V
DS
T = 175°C
mA
J
(Note 5)
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= +18/−5 V, V = 0 V
250
nA
GSS
DS
Gate Threshold Voltage
V
R
V
= V , I = 4 mA
1.8
2.8
4.3
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
−5
+18
V
= 15 V, I = 12 A, T = 25°C
95
70
85
mꢀ
DS(on)
GS
D
J
V
GS
= 18 V, I = 12 A, T = 25°C
105
D
J
V
GS
= 18 V, I = 12 A, T = 175°C
D
J
(Note 5)
Forward Transconductance
g
FS
V
DS
= 10 V, I = 12 A (Note 5)
6.9
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz,
DS
(Note 5)
956
89
pF
nC
ISS
GS
V
= 325 V
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
7.8
50
Q
V
= −5/18 V, V = 520 V,
GS DS
G(TOT)
I
= 12 A
D
Gate−to−Source Charge
Gate−to−Drain Charge
Q
Q
14
GS
(Note 5)
15
GD
f = 1 MHz
7.6
ꢀ
Gate−Resistance
R
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
GS
I
= −5/18 V, V = 400 V,
8
ns
d(ON)
DS
= 12 A, R = 2.2 ꢀ,
D
G
Rise Time
t
r
12
20
9
Inductive Load
(Note 5)
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
34
11
45
ꢁ J
ON
E
OFF
E
TOT
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
I
V
V
= −5 V, T = 25°C
24
79
A
A
V
SD
GS
J
Current
(Note 5)
Pulsed Source−Drain Diode Forward Current
(Note 3)
I
= −5 V, T = 25°C
SDM
GS
J
(Note 5)
Forward Diode Voltage
V
V
GS
= −5 V, I = 12 A, T = 25°C
4.5
SD
SD
J
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2
NVBG095N065SC1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
GS
= −5/18 V, I = 12 A,
15
62
6.5
8
ns
nC
ꢁ J
A
RR
SD
dI /dt = 1000 A/ꢁ s
S
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge time
Q
RR
(Note 5)
E
REC
I
RRM
Ta
8
ns
ns
Discharge time
Tb
7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Defind by design, not subject to production test.
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3
NVBG095N065SC1
TYPICAL CHARACTERISTICS
3
60
50
40
30
20
V
GS
= 18 V
15 V
V
GS
= 12 V
12 V
2
15 V
18 V
10 V
1
9 V
8 V
7 V
10
0
0
0
10
I , DRAIN CURRENT (A)
20
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.7
200
150
I
V
= 12 A
I
D
= 12 A
D
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
= 18 V
GS
T = 25°C
J
T = 150°C
J
100
50
0.8
0.7
−75 −50 −25
0
25 50 75 100 125 150 175 200
10
12
14
16
18
T , JUNCTION TEMPERATURE (°C)
J
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
50
40
30
20
50
10
V
DS
= 10 V
V
GS
= −5 V
T = 175°C
J
T = 25°C
J
T = 25°C
J
T = −55°C
J
T = 175°C
J
T = −55°C
J
10
0
1
2
3
4
5
6
7
8
2
4
6
8
10
12
14
16
18
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NVBG095N065SC1
TYPICAL CHARACTERISTICS
18
15
12
9
10000
I
D
= 12 A
V
DD
= 390 V
V
= 650 V
DD
C
iss
1000
100
V
DD
= 520 V
C
oss
6
3
C
rss
0
10
1
f = 1 MHz
= 0 V
−3
−6
V
GS
0
15
30
45
60
0.1
1
10
100
650
175
1
V
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
DS
g
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
100
40
30
20
V
GS
= 18 V
T = 25°C
J
10
10
0
R
= 1.36°C/W
ꢂ
JC Typ
1
25
50
75
100
125
150
0.001
0.01
0.1
1
t
, TIME IN AVALANCHE (ms)
T , CASE TEMPERATURE (°C)
C
AV
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100
10
100K
10K
1K
Single Pulse
R
= 1.36°C/W
ꢂ
JC Typ
T
C
= 25°C
10 ꢁ s
100 ꢁ s
1
1 ms
10 ms
100
10
R
Limit
DS(on)
Thermal Limit
Package Limit
100 ms/DC
100
, DRAIN−TO−SOURCE VOLTAGE (V)
0.1
0.00001 0.0001 0.001
0.01
0.1
0.1
1
10
1000
V
DS
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NVBG095N065SC1
TYPICAL CHARACTERISTICS
10
1
0.5 Duty Cycle
0.2
0.1
0.05
0.01
0.1
0.02
Notes:
Single Pulse
0.00001
P
DM
R
= 1.36°C/W
ꢂ
JC Typ
0.01
Peak T = P
Duty Cycle, D = t /t
x Z (t) + T
ꢂ
DM JC C
J
t
1
1
2
t
2
0.001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 13. Junction−to−Case Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Package
Shipping
NVBG095N065SC1
D2PAK−7L
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NVBG095N065SC1
PACKAGE DIMENSIONS
D2PAK7 (TO−263−7L HV)
CASE 418BJ
ISSUE B
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7
NVBG095N065SC1
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