NVBGS1D2N08H [ONSEMI]
Power MOSFET, 80 V, 1.2 mΩ, 353 A, Single N−Channel;
| 型号： | NVBGS1D2N08H |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, 80 V, 1.2 mΩ, 353 A, Single N−Channel |
| 文件： | 总8页 (文件大小：298K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel, D2PAK7
80 V, 1.34 mW, 290 A
NVBGS1D2N08H
Features
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• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
• AEC−Q101 Qualification
V
R
MAX
I MAX
D
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(BR)DSS
DS(ON)
Compliant
80 V
1.34 mꢂ @ 10 V
290 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
1. Gate
D (Pin 8, tab)
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
2. Source
3. Source
5. Source
6. Source
7. Source
8. Drain
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
D
290
205
259
130
43
A
C
G (Pin 1)
Current R
(Note 2)
ꢀ
JC
T
C
Steady
State
Power Dissipation
(Note 2)
T
C
P
D
W
A
S (Pins 2,3,5,6,7)
N−CHANNEL MOSFET
R
ꢀ
JC
T
C
= 100°C
Continuous Drain
Current R
I
D
T = 25°C
A
ꢀ
JA
31
T = 100°C
A
(Notes 1, 2)
Steady
State
MARKING
DIAGRAM
8
Power Dissipation
T = 25°C
A
P
D
5.7
2.9
900
W
R
(Notes 1, 2)
ꢀ
JA
T = 100°C
A
1
2
3
Pulsed Drain Current
T = 25°C, t = 100 ꢁ s
A
I
DM
A
p
BGS1D2
N08H
AYWWG
5
6
7
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
2
D PAK7
CASE 221BP
Source Current (Body Diode)
I
S
199
A
Single Pulse Drain−to−Source Avalanche
E
AS
1500
mJ
Energy (I = 32 A
)
L
pk
BGS1D2N08H = Specific Device Code
Lead Temperature for Soldering Purposes
T
260
°C
L
A
Y
= Assembly Location
= Year
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
WW = Work Week
= Pb−Free Package
G
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
Parameter
Symbol
Value
0.58
Unit
†
Device
Package
Shipping
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
ꢀ
JC
2
NVBGS1D2N08H
800 / Tape &
Reel
D PAK7
R
26.2
ꢀ
JA
(Pb−Free)
2
1. Surface−mounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
March, 2021 − Rev. 1
NVBGS1D2N08H/D
NVBGS1D2N08H
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 ꢁ A
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 ꢁ A, ref to 25°C
56
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
ꢁ A
ꢁ A
nA
DSS
GS
DS
J
V
= 80 V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
GSS
DS
GS
V
V
= V , I = 650 ꢁ A
2.0
2.9
−7.5
1.1
4.0
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
V
/T
J
I = 650 ꢁ A, ref to 25°C
D
mV/°C
GS(TH)
R
V
= 10 V, I = 50 A
1.34
mꢂ
DS(on)
GS
D
g
FS
V
= 5 V, I = 50 A
213
0.5
S
DS
D
Gate−Resistance
R
ꢂ
G
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, V = 40 V, f = 1 MHz
10830
1605
45
pF
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
GS
= 10 V, V = 40 V; I = 50 A
160
28
nC
G(TOT)
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
Q
43
GS
GD
GP
Q
V
33
4.3
V
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
V
= 10 V, V = 64 V,
40
34
ns
d(ON)
GS
D
DS
I
= 50 A, R = 6 ꢂ
G
t
r
Turn−Off Delay Time
Fall Time
t
134
45
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
0.8
0.65
78
1.3
V
SD
GS
J
I
= 50 A
T = 125°C
J
Reverse Recovery Time
t
V
= 0 V, dI /dt = 100 A/ꢁ s,
ns
RR
GS
S
I
S
= 50 A
Reverse Recovery Charge
Q
122
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 ꢁ s, duty cycle ≤ 2%.
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2
NVBGS1D2N08H
TYPICAL CHARACTERISTICS
250
250
200
150
100
10 V
V
GS
= 6.0 V
V
DS
= 5 V
5.0 V
200
150
100
T = 25°C
J
4.5 V
50
0
50
0
T = 175°C
J
T = −55°C
J
0
0.3
0.6
0.9
1.2
1.5
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
6
20
15
10
I
D
= 50 A
5
4
3
2
5
0
V
= 10 V
GS
1
0
T = 125°C
J
T = 25°C
J
3
4
5
6
7
8
9
10
0
50
100
150
200
250
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
1E−02
1E−03
1E−04
1E−05
1E−06
1E−07
I
V
= 50 A
D
= 10 V
GS
T = 175°C
J
2.0
1.5
T = 150°C
J
T = 125°C
J
T = 100°C
J
T = 85°C
J
1.0
0.5
T = 25°C
J
1E−08
1E−09
−75 −50 −25
0
25 50 75 100 125 150 175
5
15
25
35
45
55
65
75
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, REVERSE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVBGS1D2N08H
TYPICAL CHARACTERISTICS
100K
10K
1K
10
Q
G(TOT)
C
C
iss
V
DD
= 30 V
8
6
4
V
= 40 V
V
= 50 V
DD
DD
oss
Q
Q
GD
GS
100
C
rss
10
1
2
0
V
= 0 V
GS
f = 1 MHz
0.1
1
10
80
0
30
60
90
120
150
180
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
250
100
1000
V
GS
= 0 V
t
d(off)
t
10
1
f
t
r
t
d(on)
100
10
T = 175°C
J
0.1
0.01
T = 25°C
T = −55°C
J
J
0.001
0
10
20
30
40
50
60
0
0.2
0.4
0.6
0.8
1.0
1.2
R , GATE RESISTANCE (ꢂ)
G
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1K
1000
100
10
100
10 ꢁ s
T
= 25°C
J(initial)
0.5 ms
V
≤ 10 V
GS
1 ms
Single Pulse
= 25°C
T
= 125°C
J(initial)
10
1
T
C
1
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
1000
0.0001
0.001
t , TIME IN AVALANCHE (s)
AV
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVBGS1D2N08H
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 13. Transient Thermal Impedance
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5
NVBGS1D2N08H
PACKAGE DIMENSIONS
D2PAK7 (TO−263−7LD) 15.4x9.9x4.5
CASE 221BP
ISSUE A
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6
NVBGS1D2N08H
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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