NVBG030N120M3S [ONSEMI]
Silicon Carbide (SiC) MOSFET - EliteSiC, 30 mohm, 1200 V, M3S, D2PAK-7L;型号: | NVBG030N120M3S |
厂家: | ONSEMI |
描述: | Silicon Carbide (SiC) MOSFET - EliteSiC, 30 mohm, 1200 V, M3S, D2PAK-7L |
文件: | 总8页 (文件大小:228K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
29ꢀmohm, 1200ꢀV, M3S,
D2PAK-7L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
39 mW @ 18 V
77 A
Drain (TAB)
NVBG030N120M3S
Features
Gate (Pin 1)
• Typ. R
= 29 mW @ V = 18 V
GS
DS(on)
• Ultra Low Gate Charge (Q
= 107 nC)
G(tot)
• High Speed Switching with Low Capacitance (C = 106 pF)
oss
Driver Source (Pin 2)
Power Source (Pins 3, 4, 5, 6, 7)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
N−CHANNEL MOSFET
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for EV/HEV
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
1200
Unit
V
D2PAK−7L
CASE 418BJ
V
DSS
Gate−to−Source Voltage
V
GS
−10/+22
−3/+18
V
Recommended Operation Values
of Gate−to−Source Voltage
T
< 175°C
= 25°C
V
GSop
V
C
MARKING DIAGRAM
Continuous Drain
Current (Notes 2, 3)
Steady
State
T
I
D
77
348
54
A
W
A
C
BG030N
120M3S
AYWWZZ
Power Dissipation
(Note 2)
P
D
Continuous Drain
Current (Notes 2, 3)
Steady
State
T
C
= 100°C
I
D
BG030N120M3S = Specific Device Code
A
Y
= Assembly Location
= Year
Power Dissipation
(Note 2)
P
174
207
W
A
D
WW = Work Week
ZZ
Pulsed Drain Current
(Note 4)
T
C
= 25°C
I
DM
= Lot Traceability
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
A
J
stg
+175
ORDERING INFORMATION
Source Current (Body Diode)
I
S
68
†
Device
Package
Shipping
T
C
= 25°C, V = −3 V (Note 2)
GS
NVBG030N120M3S
D2PAK−7L
800 / Tape
& Reel
Single Pulse Drain−to−Source Avalanche
Energy (I = 21 A, L = 1 mH) (Note 5)
E
220
270
mJ
°C
AS
L(pk)
Maximum Temperature for Soldering (10 s)
T
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface mounted on a FR−4 board using1 in pad of 2 oz copper.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. The maximum current rating is based on typical RDS(on) performance.
4. Repetitive rating, limited by max junction temperature.
5. E of 220 mJ is based on starting T = 25°C; L = 1 mH, I = 21 A,
AS
DD
J
AS
V
= 100 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
March, 2023 − Rev. 0
NVBG030N120M3S/D
NVBG030N120M3S
THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.43
40
Unit
Junction−to−Case − Steady State (Note 2)
R
°C/W
q
JC
Junction−to−Ambient − Steady State (Notes 1, 2)
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF−STATE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I
D
= 1 mA, referenced to 25°C
−
0.3
V/°C
(BR)DSS
J
(Note 7)
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON−STATE CHARACTERISTICS
Gate Threshold Voltage
I
V
= 0 V, V = 1200 V
−
−
−
−
100
1
mA
mA
DSS
GS
DS
I
V
= +22/−10 V, V = 0 V
GSS
GS DS
V
R
V
= V , I = 15 mA
2.04
−3
−
2.4
−
4.4
+18
39
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
= 18 V, I = 30 A, T = 25°C
29
58
mW
DS(on)
GS
D
J
V
= 18 V, I = 30 A, T = 175°C
−
−
GS
D
J
(Note 7)
Forward Transconductance
g
FS
V
DS
= 10 V, I = 30 A (Note 7)
−
30
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
−
2430
106
9.4
107
6
−
−
−
−
−
−
−
−
pF
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
= −3/18 V, V = 800 V,
nC
G(TOT)
GS
DS
I
= 30 A
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
G(TH)
Q
17
GS
GD
Q
28
R
f = 1 MHz
3.4
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= −3/18 V,
−
−
−
−
−
−
−
16
20
−
−
−
−
−
−
−
ns
d(ON)
GS
V
= 800 V,
= 30 A,
= 4.7 W
DS
Rise Time
t
r
I
D
R
G
Turn−Off Delay Time
t
48
d(OFF)
inductive load (Notes 6, 7)
Fall Time
t
f
11
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
310
138
448
mJ
E
OFF
E
tot
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
I
V
= −3 V, T = 25°C
−
−
−
−
−
68
207
−
A
V
SD
GS
C
Current (Note 2)
(Note 7)
Pulsed Source−Drain Diode Forward
Current (Note 4)
I
SDM
Forward Diode Voltage
V
V
GS
= −3 V, I = 30 A, T = 25°C
4.6
SD
SD
J
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2
NVBG030N120M3S
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
S
= −3/18 V, I = 30 A,
−
−
−
−
−
−
19
111
10
−
−
−
−
−
−
ns
nC
mJ
A
RR
GS
SD
dI /dt = 1000 A/ms, V = 800 V
DS
Q
RR
(Note 7)
E
REC
RRM
I
12
t
A
t
B
11
ns
ns
Discharge time
8.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. E /E
result is with body diode
ON OFF
7. Defined by design, not subject to production test.
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3
NVBG030N120M3S
TYPICAL CHARACTERISTICS
200
160
120
80
2.0
12 V
V
GS
= 20 V to 15 V
V
GS
= 15 V to 20 V
1.5
12 V
1.0
0.5
40
0
0
2
4
6
8
10
0
20
40
I , DRAIN CURRENT (A)
60
80
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.5
2.0
1.5
1.0
400
350
300
250
I
D
= 30 A
I
V
= 30 A
D
= 18 V
GS
200
150
100
T = 150°C
J
0.5
0
50
0
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175 200
4
8
12
16
20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
100
80
500
400
300
200
R
= 4.7 W
= 800 V
= 18/−3 V
= 25°C
V
DS
= 10 V
G
Etot
Eon
V
V
DD
GS
T
C
60
T = 175°C
J
40
T = 25°C
J
Eoff
100
0
20
0
T = −55°C
J
0
3
6
9
12
15
18
10
15
20
25
30
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , COLLECTOR CURRENT (A)
D
Figure 5. Transfer Characteristics
Figure 6. Switching Loss vs. Collector Current
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NVBG030N120M3S
TYPICAL CHARACTERISTICS
500
400
300
200
400
V
= 800 V
= 15 A
= 18/−3 V
R
= 4.7 W
= 30 A
= 18/−3 V
= 25°C
DD
G
Etot
Eon
Etot
Eon
I
D
I
D
V
GS
V
GS
300
200
T = 25°C
C
T
C
Eoff
Eoff
100
0
100
0
600
650
700
750
800
0
2
4
6
8
10
V
DD
, DRAIN−TO−SOURCE VOLTAGE (V)
R , GATE RESISTANCE (W)
G
Figure 7. Switching Loss vs. Drain−to−Source
Figure 8. Switching Loss vs. Gate Resistance
Voltage
300
100
18
15
12
V
DD
= 400 V
I
D
= 30 A
V
GS
= −3 V
V
DD
= 800 V
9
6
V
= 600 V
DD
T = 175°C
J
10
1
T = 25°C
J
3
0
T = −55°C
J
−3
0
2
4
6
8
10
0
10 20 30 40 50 60 70 80 90 100 110 120
Q , GATE CHARGE (nC)
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
G
Figure 9. Reverse Drain Current vs. Body
Diode Forward Voltage
Figure 10. Gate−to−Source Voltage vs. Total
Charge
10K
1K
100
C
ISS
25°C
150°C
C
C
OSS
RSS
100
10
10
1
f = 1 MHz
V
GS
= 0 V
1
0.1
1
10
100
800
0.0001
0.001
T
0.01
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
, AVALANCHE TIME (ms)
AV
Figure 11. Capacitance vs. Drain−to−Source
Figure 12. Unclamped Inductive Switching
Capability
Voltage
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5
NVBG030N120M3S
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
1000
R
= 0.43°C/W
q
JC
T = Max Rated
J
V
= 18 V
Single Pulse
GS
100
10
1
10 ms
100 ms
1 ms
T
C
= 25°C
10 ms
Limit
R
= 0.43°C/W
q
JC
R
0.1
DS(on)
100 ms/DC
Thermal Limit
Package Limit
10
0
0.01
25
50
75
100
125
150
175
0.1
1
10
100
1000
T , CASE TEMPERATURE (°C)
C
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Continuous Drain
Current vs. Case Temperature
Figure 14. Safe Operating Area
25K
10K
R
= 0.43°C/W
q
JC
Single Pulse
T
C
= 25°C
1K
100
10
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE WIDTH (sec)
Figure 15. Single Pulse Maximum Power
Dissipation
2
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
P
DM
Notes:
= 0.43°C/W
0.01
R
q
JC
Single Pulse
Peak T = P
x Z (t) + T
q
JC C
t
1
J
DM
Duty Cycle, D = t / t
1
2
t
2
0.001
0.00001
0.0001
0.001
t, PULSE TIME (s)
0.01
0.1
1
Figure 16. Junction−to−Case Transient Thermal Response
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6
NVBG030N120M3S
PACKAGE DIMENSIONS
D2PAK7 (TO−263−7L HV)
CASE 418BJ
ISSUE B
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7
NVBG030N120M3S
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