NVB125N65S3 [ONSEMI]
MOSFET - Power, N-Channel, SUPERFET® III, Automotive, Easy-drive, 650 V, 24 A, 125 mΩ;
| 型号： | NVB125N65S3 |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, N-Channel, SUPERFET® III, Automotive, Easy-drive, 650 V, 24 A, 125 mΩ |
| 文件： | 总10页 (文件大小：316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power, N-Channel,
SUPERFET) III, Automotive,
Easy-drive
650 V, 24 A, 125 mW
NVB125N65S3
Description
www.onsemi.com
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
125 mW @ 10 V
24 A
D
Consequently, SUPERFET III MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
Features
• AEC−Q101 Qualified
G
• 700 V @ T = 150°C
J
• Typ. R
= 105 mW
DS(on)
S
• Ultra Low Gate Charge (Typ. Q = 46 nC)
g
POWER MOSFET
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
= 439 pF)
oss(eff.)
D
Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for HEV
G
S
2
D PAK
CASE 418AJ
MARKING DIAGRAM
$Y&Z&3&K
NVB
125N65S3
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
NVB125N65S3
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
April, 2020 − Rev. 0
NVB125N65S3/D
NVB125N65S3
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
30
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
24
A
C
− Continuous (T = 100°C)
15
C
I
Drain Current
− Pulsed (Note 1)
60
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
115
AS
AS
I
3.7
E
1.81
100
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
20
P
(T = 25°C)
181
W
W/°C
°C
D
C
− Derate Above 25°C
1.45
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 3.7 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 12 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.69
40
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
†
Part Number
Top Marking
Package
Reel Size
Tape Width
Shipping
2
NVB125N65S3
NVB125N65S3
D −PAK
330 mm
24 mm
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NVB125N65S3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150_C
GS
D
J
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= 1 mA, Referenced to 25_C
0.68
1.35
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
1
mA
DSS
GS
= 520 V, T = 125_C
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 0.59 mA
2.5
4.5
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 12 A
105
16
125
D
g
FS
= 20 V, I = 12 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
1940
40
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
439
62
oss(eff.)
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 12 A, V = 10 V
46
g(tot)
D
GS
(Note 4)
Q
12
gs
Q
19
gd
ESR
f = 1 MHz
0.5
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 400 V, I = 12 A, V = 10 V,
21
19
48
4.6
ns
ns
ns
ns
d(on)
DD
g
D
GS
R = 4.7 W
t
r
(Note 4)
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
24
60
A
A
S
I
SM
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 12 A
1.2
V
SD
GS
SD
t
= 400 V, I = 12 A,
339
5.7
ns
mC
rr
DD
F
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NVB125N65S3
TYPICAL CHARACTERISTICS
100
10
100
V
= 10 V
GS
7.0 V
V
= 20 V
10 V
GS
6.5 V
6.0 V
5.5 V
10
5.5 V
8.0 V
7.0 V
6.5 V
8.0 V
1
1
6.0 V
0.1
0.1
0.1
1
, DRAIN−SOURCE VOLTAGE (V)
10
0.1
1
10
V
DS
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
255C
Figure 2. On−Region Characteristics
1505C
100
0.4
0.3
0.2
V
= 20 V
T
C
= 25°C
DS
250 ms Pulse Test
V
GS
= 10 V
T = 25°C
J
10
V
GS
= 20 V
0.1
0
T = 150°C
J
T = −55°C
J
1
3
4
5
6
7
8
9
0
10
20
30
40
50
60
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. Transfer Characteristics
Figure 4. On−Resistance Variation vs. Drain
Current and Gate Voltage
100K
10K
1K
100
10
1
V
= 0 V
GS
250 ms Pulse Test
C
C
iss
100
10
V
= 0 V
oss
GS
T = 150°C
J
T = 25°C
J
f = 1 MHz
0.1
C
rss
0.01
C
C
C
= C + C (C = shorted)
gs gd ds
iss
1
= C + C
oss
rss
ds
gd
T = −55°C
= C
J
gd
0.001
0.1
0
0.5
1.0
1.5
0.1
1
10
100
1K
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. Body Diode Forward Voltage
Figure 6. Capacitance Characteristics
Variation vs. Source Current and Temperature
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4
NVB125N65S3
TYPICAL CHARACTERISTICS
10
8
1.2
V
DS
= 130 V
V
= 0 V
= 10 mA
GS
I
D
= 12 A
I
D
1.1
1.0
V
DS
= 400 V
6
4
0.9
0.8
2
0
0
10
20
30
40
50
−50
0
50
100
150
Q , TOTAL GATE CHARGE (nC)
G
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Gate Charge Characteristics
Figure 8. Breakdown Voltage Variation vs.
Temperature
100
10
1
2.5
2.0
1.5
1.0
I
V
= 12 A
= 10 V
D
R
Limit
DS(on)
GS
100 ms
1 ms
100 ms
10 ms
0.1
DC
T
= 25°C
C
0.5
0
Single Pulse
= 0.69°C/W
R
q
JC
0.01
−50
0
50
100
150
1
10
, DRAIN−SOURCE VOLTAGE (V)
DS
100
1000
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 9. On−Resistance Variation vs.
Figure 10. Maximum Safe Operating Area
Temperature
25
20
15
10
10
8
6
4
2
0
5
0
25
50
75
100
125
150
0
130
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
260
390
520
650
T , CASE TEMPERATURE (°C)
V
C
Figure 11. Maximum Drain Current vs. Case
Temperature
Figure 12. EOSS vs. Drain−to−Source Voltage
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5
NVB125N65S3
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
1000
100
Current Limited Max
0.2
0
10
0
25
50
75
100
125
150
0.00001 0.0001 0.001
0.01
0.1
1
T , CASE TEMPERATURE (°C)
C
t, RECTANGULAR PULSE
Figure 13. Normalized Power Dissipation vs.
Case Temperature
Figure 14. Peak Current Capability
800
700
600
500
400
300
200
1.2
1.0
I
D
= 12 A
I
= 590 mA
D
T = 150°C
J
0.8
0.6
T = 25°C
J
100
0
4
5
6
7
8
9
10
−75 −50 −25
0
25
50
75 100 125 150
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 15. RDS(on) vs. Gate Voltage
Figure 16. Normalized Gate Threshold Voltage
vs. Temperature
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Notes:
P
DM
0.01
0.01
Z
q
(t) = r(t) x R
q
JC
JC
R
= 0.69°C/W
q
JC
t
Peak T = P
Duty Cycle, D = t /t
x Z (t) + T
q
DM JC C
1
J
Single Pulse
0.00001
t
1
2
2
0.001
0.0001
0.001
0.01
0.1
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 17. Transient Thermal Response
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6
NVB125N65S3
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 18. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 19. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 20. Unclamped Inductive Switching Test Circuit & Waveforms
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7
NVB125N65S3
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 21. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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