NVB260N65S3 [ONSEMI]
Single N-Channel Power MOSFET SUPERFET® III, Easy Drive, 650 V , 12 A, 260 mΩ, D2PAK;
| 型号： | NVB260N65S3 |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET SUPERFET® III, Easy Drive, 650 V , 12 A, 260 mΩ, D2PAK |
| 文件： | 总10页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power, N-Channel,
SUPERFET) III, Automotive,
Easy-drive
650 V, 12 A, 260 mW
NVB260N65S3
www.onsemi.com
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advance technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET
is very suitable for various power system miniaturization and higher
efficiency.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
260 mW @ 10 V
12 A
D
G
Features
• AEC−Q101 Qualified
S
• 700 V @ T = 150°C
J
POWER MOSFET
• Typ. R
= 222 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 24 nC)
g
D
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
= 248 pF)
oss(eff.)
G
S
2
Applications
D −PAK
CASE 418AJ
• Automotive On Board Charger
• Automotive DC/DC Converter for HEV
MARKING DIAGRAM
$Y&Z&3&K
NVB
260N65S3
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
NVB260N65S3
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
August, 2020 − Rev. 1
NVB260N65S3/D
NVB260N65S3
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
C
Symbol
Parameter
Value
650
30
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
DC
V
AC (f > 1 Hz)
30
V
I
D
Drain Current
Continuous (T = 25°C)
12
A
C
Continuous (T = 100°C)
7.6
C
I
Drain Current
Pulsed (Note 1)
30
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
57
AS
AS
I
2.3
E
0.9
mJ
V/ns
AR
dv/dt
100
20
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
P
(T = 25°C)
C
90
W
W/°C
°C
D
Derate Above 25°C
0.72
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I = 2.3 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 6 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
1.39
40
Unit
R
R
Thermal Resistance, Junction to Case, Max.
_C/W
q
JC
JA
Thermal Resistance, Junction to Ambient, Max. (Note 4)
q
2
4. Device on 1 in pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material.
PACKAGE MARKING AND ORDERING INFORMATION
†
Part Number
Top Marking
Package
Reel Size
Tape Width
Shipping
2
NVB260N65S3
NVB260N65S3
D −PAK
330 mm
24 mm
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
NVB260N65S3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150_C
GS
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= 1 mA, Referenced to 25_C
0.66
0.77
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
1
mA
DSS
GS
= 520 V, T = 125_C
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 0.29 mA
2.5
4.5
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 6 A
222
7.4
260
D
g
FS
= 20 V, I = 6 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
1010
25
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
248
33
oss(eff.)
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 6 A, V = 10 V
24
g(tot)
D
GS
(Note 5)
Q
6.1
9.7
8.7
gs
Q
gd
ESR
f = 1 MHz
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
V
= 400 V, I = 6 A,
18
18
49
12
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R = 4.7 W
g
t
r
(Note 5)
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
12
30
A
A
S
I
SM
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 6 A
1.2
V
SD
GS
SD
t
= 400 V, I = 6 A,
251
3.4
ns
mC
rr
DD
F
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
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3
NVB260N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
40
10
100.0
V
GS
=10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
=10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10.0
1.0
1
250 ms Pulse Test
= 150°C
250 ms Pulse Test
= 25°C
T
C
T
C
0.1
0.1
0.2
1
10
20
0.1
1.0
10.0
V
, Drain−Source Voltage (V)
V
DS
, Drain−Source Voltage (V)
DS
Figure 1. On−Region Characteristics 255C
Figure 2. On−Region Characteristics 1505C
30
10
0.8
V
= 20 V
DS
T
C
= 25°C
250 ms Pulse Test
0.6
0.4
0.2
0.0
150°C
V
GS
= 10 V
25°C
V
GS
= 20 V
−55°C
1
3
4
V
5
6
7
8
9
0
10
20
30
40
, Gate−Source Voltage (V)
I , Drain Current (A)
D
GS
Figure 3. Transfer Characteristics
Figure 4. On−Resistance Variation vs.
Drain Current and Gate Voltage
100
10
1
100000
10000
1000
100
V
= 0 V
GS
250 ms Pulse Test
C
iss
150°C
25°C
C
oss
0.1
V
= 0 V
10
−55°C
GS
f = 1 MHz
0.01
C
C
C
= C + C (C = shorted)
C
iss
gs
gd
ds
rss
1
= C + C
oss
rss
ds
gd
= C
gd
0.001
0.1
0.0
0.5
1.0
1.5
0.1
1
10
100
1000
V
SD
, Body Diode Forward Voltage (V)
V
DS
, Drain−Source Voltage (V)
Figure 5. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 6. Capacitance Characteristics
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4
NVB260N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
10
8
1.2
I
D
= 6 A
V
= 0 V
= 10 mA
GS
I
D
V
DS
= 130 V
1.1
1.0
0.9
0.8
V
DS
= 400 V
6
4
2
0
0
6
12
18
24
30
−50
50
100
150
0
Q , Total Gate Charge (nC)
g
T , Junction Temperature (5C)
J
Figure 8. Breakdown Voltage Variation
vs. Temperature
Figure 7. Gate Charge Characteristics
3.0
100
V
GS
= 10 V
I
D
= 6 A
10 ms
2.5
2.0
1.5
1.0
0.5
0.0
10
1
100 ms
1 ms
DC
Operation in this Area
is Limited by R
100 ms
10 ms
DS(on)
0.1
0.01
T
C
= 25°C
T = 150°C
J
Single Pulse
−50
0
50
100
150
1
10
100
1000
T , Junction Temperature (5C)
J
V
DS
, Drain−Source Voltage (V)
Figure 9. On−Resistance Variation
Figure 10. Maximum Safe Operating Area
vs. Temperature
6
15
10
5
4
2
0
0
150
0
130
DS
260
390
520
650
25
50
75
100
125
V
, Drain to Source Voltage (V)
T , Case Temperature (5C)
C
Figure 12. EOSS vs. Drain to Source Voltage
Figure 11. Maximum Drain Current
vs. Case Temperature
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5
NVB260N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
200
100
Current Max
Limited
0.2
0
10
0
25
50
75
100
125
150
0.00001 0.0001 0.001
0.01
0.1
1
T , CASE TEMPERATURE (5C)
C
t, Rectangular Pulse (s)
Figure 14. Peak Current Capability
Figure 13. Normalized Power Dissipation vs.
Case Temperature
1400
1.2
1.1
1
I
= 6 A
D
I
D
= 290 mA
1200
1000
800
600
400
200
0
0.9
0.8
0.7
0.6
T = 150°C
J
T = 25°C
J
−80
−40
0
40
80
120
160
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
T , AMBIENT TEMPERATURE (5C)
J
Figure 15. RDS(on) vs. Gate Voltage
Figure 16. Normalized Gate
Threshold Voltage vs. Temperature
2
DUTY CYCLE − DESCENDING ORDER
1
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
t
1
t
2
0.01
0.001
Z
R
(t) = r(t) x R
q
JC
q
JC
= 1.39°C/W
q
JC
SINGLE PULSE
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
q
JC C
J
DM
1
2
10−5
10−4
10−3
10−2
10−1
100
101
t, Rectangular Pulse Duration (sec)
Figure 17. Transient Thermal Response Curve
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6
NVB260N65S3
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 18. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 19. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 20. Unclamped Inductive Switching Test Circuit & Waveforms
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7
NVB260N65S3
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 21. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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