NUP4102XV6T1 [ONSEMI]

100W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE, PLASTIC, CASE 463A-01, 6 PIN;
NUP4102XV6T1
型号: NUP4102XV6T1
厂家: ONSEMI    ONSEMI
描述:

100W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE, PLASTIC, CASE 463A-01, 6 PIN

光电二极管 电视
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NUP4102XV6  
6−Pin Bi−Directional Quad  
TVS Array  
This 6−Pin bi−directional transient suppressor array is designed for  
applications requiring transient overvoltage protection capability. It is  
intended for use in transient voltage and ESD sensitive equipment  
such as computers, printers, cell phones, medical equipment, and other  
applications. Its integrated design provides bi−directional protection  
for four separate lines using a single SOT−563 package. This device is  
ideal for situations where board space is a premium.  
Features  
http://onsemi.com  
6
4
3
1
Bi−directional Protection for Four Lines in a  
2, 5  
Single SOT−563 Package  
Peak Power Dissipation − 75 W (8x20 msec Waveform)  
Low Leakage Current (100 nA @ 12 V)  
Low Capacitance (< 15 pF)  
Provides ESD Protection for JEDEC Standards JESD22  
− Machine Model = Class C  
− Human Body Model = Class 3B  
Provides ESD Protection for IEC 61000−4−2, 15 kV (Air),  
8 kV (Contact)  
Mechanical Characteristics  
SOT−563  
CASE 463A  
PLASTIC  
Void Free, Transfer−Molded, Thermosetting Plastic Case  
Corrosion Resistant Finish, Easily Solderable  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
Applications  
MARKING DIAGRAM  
6 5 4  
RP MG  
G
GSM Handsets and Accessories  
1 2 3  
Other Telephone Sets  
Computers / Printers / Set−Top Boxes  
RP = Device Marking  
M
G
= One Digit Date Code  
= Pb−Free Package  
(Note: Microdot may be in either location)  
MAXIMUM RATINGS (T =25°C, unless otherwise specified)  
J
Rating  
Symbol Value  
Unit  
Peak Power Dissipation  
P
75  
W
PK  
8x20 msec Double Exponential Waveform,  
(Note 1)  
ORDERING INFORMATION  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to  
125  
°C  
°C  
J
Device  
Package  
Shipping  
NUP4102XV6T1G SOT−563 4000/Tape & Reel  
(Pb−Free)  
T
−55 to  
150  
STG  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Lead Solder Temperature – Maximum (10 sec)  
T
260  
°C  
L
Human Body Model ( HBM)  
Machine Model (MM)  
IEC 61000−4−2 Air (ESD)  
IEC 61000−4−2 Contact (ESD)  
ESD  
16  
0.4  
30  
30  
kV  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Non−repetitive current pulse per Figure 3.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 1  
NUP4102XV6/D  
 
NUP4102XV6  
ELECTRICAL CHARACTERISTICS (T =25°C, unless otherwise specified)  
J
Parameter  
Reverse Working Voltage  
Conditions  
Symbol  
Min  
Typ  
Max  
12  
Unit  
V
(Note 2)  
V
RWM  
Breakdown Voltage  
Reverse Leakage Current  
Clamping Voltage  
I = 1 mA, (Note 3)  
V
13.6  
17.8  
100  
25  
V
T
BR  
V
= 12 V  
I
10  
nA  
V
RWM  
R
I
= 3 A, (8x20 msec  
V
PP  
C
Waveform)  
Maximum Peak Pulse Current  
Capacitance  
8x20 msec waveform  
= 0 V, f=1 MHz  
I
3.0  
15  
A
PP  
V
C
13  
pF  
R
j
(Line to GND)  
2. TVS devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater than the DC  
RWM  
or continuous peak operating voltage level.  
3. V is measured at pulse test current I ; Pulse Width 1 ms.  
BR  
T
TYPICAL PERFORMANCE CURVES  
(T = 25°C unless otherwise specified)  
J
110  
110  
WAVEFORM  
PARAMETERS  
100  
90  
80  
70  
60  
50  
40  
30  
20  
100  
90  
80  
70  
60  
50  
40  
30  
20  
t = 8 ms  
r
t = 20 ms  
d
c−t  
t = I /2  
d
PP  
10  
0
10  
0
0
25  
50  
75  
100  
125  
150  
0
5
10  
15  
t, TIME (ms)  
20  
25  
30  
T , AMBIENT TEMPERATURE (°C)  
A
Figure 2. Power Derating Curve  
Figure 1. Pulse Waveform  
14  
12  
10  
8
24  
22  
20  
18  
16  
14  
12  
t
= 10 msec  
T = 25°C  
A
P
6
4
2
0
0.1  
1
10  
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14  
I
, SURGE CURRENT (A)  
PP  
V , REVERSE VOLTAGE (V)  
BR  
Figure 3. Clamping Voltage vs. Peak Pulse  
Figure 4. Junction Capacitance vs. Reverse  
Voltage  
Current (10 msec Square Wave Pulse)  
http://onsemi.com  
2
 
NUP4102XV6  
PACKAGE DIMENSIONS  
SOT−563, 6−LEAD  
CASE 463A−01  
ISSUE O  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETERS  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD THICKNESS  
IS THE MINIMUM THICKNESS OF BASE  
MATERIAL.  
A
C
−X−  
K
6
5
2
4
3
MILLIMETERS  
DIM MIN MAX  
INCHES  
B
−Y−  
MIN  
MAX  
0.067  
0.051  
0.024  
0.011  
S
J
A
B
C
D
G
J
1.50  
1.10  
0.50  
0.17  
1.70 0.059  
1.30 0.043  
0.60 0.020  
0.27 0.007  
1
0.50 BSC  
0.020 BSC  
D 56 PL  
0.08  
0.10  
1.50  
0.18 0.003  
0.30 0.004  
1.70 0.059  
0.007  
0.012  
0.067  
G
M
0.08 (0.003)  
X Y  
K
S
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
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P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
NUP4102XV6/D  

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