NUP4060AXV6 [ONSEMI]
4−Line Transient Voltage Suppressor Array; 4 ,线路瞬态电压抑制器阵列![NUP4060AXV6](http://pdffile.icpdf.com/pdf1/p00098/img/icpdf/NUP4060AXV6_524948_icpdf.jpg)
型号: | NUP4060AXV6 |
厂家: | ![]() |
描述: | 4−Line Transient Voltage Suppressor Array |
文件: | 总4页 (文件大小:50K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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NUP4060AXV6
4−Line Transient Voltage
Suppressor Array
This 4−line voltage transient suppressor array is designed for
application requiring transient voltage protection capability. It is
intended for use in over−transient voltage and ESD sensitive
equipment such as cell phones, portables, computers, printers and
other applications. This device features a common cathode design
which protects four independent lines in a single SOT−563 package.
http://onsemi.com
SOT−563 4−LINE TRANSIENT
VOLTAGE SUPPRESSOR
Features
• Protects up to 4 Lines in a Single SOT−563 Package
PIN ASSIGNMENT
• ESD Rating: IEC61000−4−2: Level 4
Contact (8 kV), Air (15 kV)
D
D
GND
1
2
3
6
5
4
1
2
• V Pin = 16 V Protection
CC
D1, D2, and D3 Pins = 6.8 V Protection
D
3
• Low Capacitance (< 7 pF @ 3 V) for D , D , and D
• This is a Pb−Free Device
1
2
3
V
CC
GND
Applications
MARKING
DIAGRAM
• Hand Held Portable Applications
• USB Interface
• Notebooks, Desktops, Servers
• SIM Card Protection
SOT−563
CASE 463A
STYLE 6
MT MG
6
G
1
1
MAXIMUM RATINGS (T = 25°C, unless otherwise specified)
J
MT = Specific Device Code
Symbol
Rating
Value
Unit
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
P
1
Peak Power Dissipation
8x20 msec double exponential waveform,
(Note 1) D , D , and D
3
V
Diode
200
W
PK
CC
20
W
°C
°C
°C
1
2
ORDERING INFORMATION
T
J
Operating Junction Temperature Range
Storage Temperature Range
−40 to 125
−55 to 150
260
†
Device
Package
Shipping
T
T
STG
NUP4060AXV6T1G SOT−563 4000/Tape & Reel
(Pb−Free)
Lead Solder Temperature – Maximum
(10 seconds)
L
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
ESD
IEC 61000−4−2 Air
IEC 61000−4−2 Contact
15000
8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 1.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
January, 2007 − Rev. 1
NUP4060/D
NUP4060AXV6
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise specified)
J
Parameter
Reverse Working Voltage (D , D , and D )
Conditions
Symbol
Min
−
Typ
−
Max Unit
(Note 2)
I = 1 mA, (Note 3)
V
RWM
5.0
7.2
V
V
1
2
3
Breakdown Voltage (D , D , and D )
V
BR
6.2
15.3
−
6.8
16
0.01
−
1
2
3
T
Breakdown Voltage (V
)
I = 5 mA, (Note 3)
V
BR2
17.1
0.5
V
CC
T
Reverse Leakage Current (D , D , and D )
V
V
V
= 3 V
I
R
I
R
mA
mA
pF
1
2
3
RWM
Reverse Leakage Current (V
)
= 11 V
BR
−
0.05
10
CC
Capacitance (D , D , and D )
= 3 V, f = 1 MHz (Line to GND)
C
J
−
7
1
2
3
R
2. TVS devices are normally selected according to the working peak reverse voltage (V
or continuous peak operating voltage level.
), which should be equal or greater than the DC
RWM
3. V is measured at pulse test current I .
BR
T
http://onsemi.com
2
NUP4060AXV6
TYPICAL ELECTRICAL CHARACTERISTICS
(Diode D , D , and D only)
1
2
3
100
110
100
90
80
70
60
50
40
30
20
10
10
0
1
0
25
50
75
100
125
150
1
10
100
1000
t, TIME (ms)
T , AMBIENT TEMPERATURE (°C)
A
Figure 2. Power Derating Curve
Figure 1. Pulse Width
0.16
0.14
0.12
0.10
0.08
0.06
0.04
14
12
10
8
T = 25°C
A
6
4
2
0
0.02
0
−60 −40 −20
0
20
40
60
80
100
0
1
2
3
4
5
6
T, TEMPERATURE (°C)
BIAS VOLTAGE (V)
Figure 3. Reverse Leakage versus
Temperature
Figure 4. Capacitance
1
100
90
80
70
60
50
40
30
20
PEAK VALUE I
@ 8 ms
t
r
RSM
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
P
0.1
HALF VALUE I
/2 @ 20 ms
RSM
0.01
t
P
10
0
T = 25°C
A
0.001
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
V , FORWARD VOLTAGE (V)
F
t, TIME (ms)
Figure 6. Forward Voltage
Figure 5. 8 × 20 ms Pulse Waveform
http://onsemi.com
3
NUP4060AXV6
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
A
−X−
L
6
5
2
4
3
MILLIMETERS
DIM MIN NOM MAX
INCHES
NOM MAX
E
−Y−
MIN
H
E
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
1
b 56 PL
C
0.5 BSC
0.20
e
M
0.08 (0.003)
X Y
L
0.10
1.50
0.30 0.004 0.008 0.012
1.70 0.059 0.062 0.066
H
1.60
E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NUP4060/D
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