NTTFD1D8N02P1E [ONSEMI]
MOSFET, Power, 25V Dual N-Channel Power Clip;
| 型号： | NTTFD1D8N02P1E |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET, Power, 25V Dual N-Channel Power Clip |
| 文件： | 总11页 (文件大小：497K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power, N-Channel
PowerTrench[ Power Clip
25 V Asymmetric Dual
NTTFD1D8N02P1E
Features
• Small Footprint (3.3mm x 3.3mm) for Compact Design
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• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• These Devices are Pb−Free and are RoHS Compliant
FET
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Typical Applications
• DC−DC Converters
• System Voltage Rails
4.2 mW @ 10 V
5.3 mW @ 4.5 V
1.4 mW @ 10 V
1.8 mW @ 4.5 V
Q1
25 V
61 A
Q2
25 V
126 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Q1
Q2
Unit
V
V
DSS
25
25
ELECTRICAL CONNECTION
V
GS
+16
−12
+16
−12
V
Continuous Drain
Current R
I
61
44
25
126
91
A
T
T
= 25°C
= 85°C
D
C
q
JC
Steady
(Note 3)
C
State
Power Dissipation
P
36
W
A
D
D
D
T
A
= 25°C
R
(Note 3)
q
JC
Continuous Drain
Current R
I
D
15
11
30
21
T
A
= 25°C
= 85°C
MARKING
DIAGRAM
q
JA
T
A
Steady
State
(Notes 1, 3)
Power Dissipation
P
I
1.6
2.0
W
A
T
A
= 25°C
R
(Notes 1, 3)
q
JA
Continuous Drain
Current R
11
8
21
15
T
A
= 25°C
= 85°C
D
q
JA
T
A
Steady
State
(Notes 2, 3)
Power Dissipation
P
0.8
0.9
W
T
A
= 25°C
R
(Notes 2, 3)
q
JA
2EMN = Specific Device Code
A
Y
WW
ZZ
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
Pulsed Drain Current
T
= 25°C, t = 10 ms
I
DM
483
861
A
A
p
Single Pulse Drain−to−Source Avalanche
E
AS
37.3 150.
1
mJ
Energy
Q1: I = 15.8 A , L = 0.3 mH (Note 4)
L
pk
Q2: I = 31.63 A , L = 0.3 mH (Note 4)
L
pk
Operating Junction and Storage Temperature T , T
−55 to + 150
°C
°C
J
stg
ORDERING INFORMATION
Lead Temperature for Soldering
T
L
260
Purposes (1/8″ from case for 10 s)
†
Device
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NTTFD1D8N02P1E
PQFN8
(Pb−Free)
3000 / Tape &
Reel
2
1. Surface−mounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2. Surface−mounted on FR4 board using minimum pad size, 2 oz. Cu pad.
3. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
Actual continuous current will be limited by thermal & electro−mechanical
application board design. R
is determined by the user’s board design.
q
JC
4. Q1 100% UIS tested at L = 0.1 mH, IAS = 24.2 A.
Q2 100% UIS tested at L = 0.1 mH, IAS = 48.1 A.
5. This device does not have ESD protection diode.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2020 − Rev. 1
NTTFD1D8N02P1E/D
NTTFD1D8N02P1E
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Q1 Max
5.0
Q2 Max
3.5
Unit
Junction−to−Case − Steady State (Notes 1, 3)
Junction−to−Ambient − Steady State (Notes 1, 3)
Junction−to−Ambient − Steady State (Notes 2, 3)
R
q
JC
R
q
JA
R
q
JA
°C/W
77
63
158
132
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
FET
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown
V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
25
25
V
= 0 V, I = 250 mA
(BR)DSS
GS
D
V
mV/°C
mA
Voltage
V
= 0 V, I = 1 mA
D
GS
Drain−to−Source Breakdown
Voltage Temperature
Coefficient
V
/
16
16
I
D
= 250 mA, ref to 25°C
= 1 mA, ref to 25°C
(BR)DSS
T
J
I
D
Zero Gate Voltage Drain
Current
I
V
GS
DS
= 0 V,
= 20 V
T = 25°C
J
10
DSS
V
10
Gate−to−Source Leakage
Current
I
V
V
= 0 V, V = +16 V / −12 V
100
100
GSS
DS
GS
nA
= 0 V, V = +16 V / −12 V
DS
GS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
Q1
Q2
Q1
Q2
Q1
1.2
1.2
2.0
2.0
V
= V , I = 190 mA
DS D
GS(TH)
GS
V
V
I
= V , I = 310 mA
DS D
GS
Negative Threshold
Temperature Coefficient
V
/T
−4.4
−4.7
3.3
= 190 mA, ref to 25°C
= 310 mA, ref to 25°C
GS(TH)
J
D
mV/°C
I
D
Drain−to−Source On
Resistance
R
V
= 10 V, I = 15 A
4.2
5.3
1.4
1.8
DS(on)
GS
D
V
= 4.5 V, I = 13 A
4.2
GS
D
mW
V
= 10 V, I = 29 A
Q2
1.04
1.34
105
207
0.54
0.45
GS
GS
D
V
= 4.5 V, I = 26 A
D
Forward Transconductance
g
FS
V
= 5 V, I = 15 A
Q1
Q2
Q1
Q2
DS
DS
D
S
V
= 5 V, I = 29 A
D
Gate−Resistance
R
T = 25°C
A
G
W
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
Q1
Q2
Q1
Q2
Q1
Q2
873
2700
243
748
19
ISS
pF
pF
pF
Output Capacitance
C
C
OSS
V
GS
= 0 V, V = 13 V, f = 1 MHz
DS
Reverse Transfer Capacitance
RSS
48
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
NTTFD1D8N02P1E
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
FET
Min
Typ
Max
Unit
CHARGES, CAPACITANCES & GATE RESISTANCE
Total Gate Charge
Q
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
5.5
17
G(TOT)
nC
nC
nC
nC
Gate−to−Drain Charge
Gate−to−Source Charge
Total Gate Charge
Q
Q
1.0
2.7
2.4
7.3
12
GD
Q1: V = 4.5 V, V = 13 V; I = 15 A
GS
DS
D
Q2: V = 4.5 V, V = 13 V; I = 29 A
GS
DS
D
GS
Q
Q1: V = 10 V, V = 13 V; I = 15 A
GS DS D
G(TOT)
Q2: V = 10 V, V = 13 V; I = 29 A
37.5
GS
DS
D
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 7)
Turn−On Delay Time
t
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
9.5
19.1
2.3
d(ON)
ns
ns
ns
ns
Rise Time
t
r
V
= 4.5 V
DD
6.6
GS
Q1: I = 15 A, V = 13 V, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
12.6
26.3
2.7
d(OFF)
Q2: I = 29 A, V = 13 V, R = 6 W
D DD G
t
f
6.3
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 7)
Turn−On Delay Time
t
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
6.6
9.4
d(ON)
ns
ns
ns
ns
Rise Time
t
r
1.1
V
= 10 V
DD
2.3
GS
Q1: I = 15 A, V = 13 V, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
17.3
37.6
1.7
d(OFF)
Q2: I = 29 A, V = 13 V, R = 6 W
D DD G
t
f
5.2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
Q1
Q2
0.80
0.70
0.80
0.69
19
1.2
1.2
SD
J
V
S
= 0 V,
GS
I
= 15 A
T = 125°C
J
V
T = 25°C
J
V
S
= 0 V,
= 29 A
GS
I
T = 125°C
J
Reverse Recovery Time
t
Q1
Q2
Q1
Q2
RR
ns
V
GS
= 0 V
S
35
Q1: I = 15 A, dI /dt = 100 A/ms
Q2: I = 29 A, dI /dt = 100 A/ms
S
Reverse Recovery Charge
Q
6.0
RR
S S
nC
21
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
NTTFD1D8N02P1E
TYPICAL CHARACTERISTICS − Q1
40
30
40
35
3.2 V
= 10 V to 3.6 V
V
GS
30
25
20
15
10
2.8 V
20
T = 25°C
J
2.6 V
10
5
0
T = 125°C
J
T = −55°C
J
0
0
1
2
3
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
10
9
6.0
5.5
5.0
4.5
4.0
3.5
T = 25°C
J
T = 25°C
D
J
I
= 15 A
8
7
V
= 4.5 V
= 10 V
GS
6
5
V
GS
4
3.0
2.5
2.0
3
2
1
2
3
4
5
6
7
8
9
10
10
15
20
25
30
35
40
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.8
100K
10K
1K
V
= 10 V
= 15 A
GS
1.6
1.4
1.2
1.0
0.8
I
D
T = 150°C
J
T = 125°C
J
100
T = 85°C
J
T = 25°C
J
10
1
0.6
0.4
−50
−25
0
25
50
75
100
125
150
5
7
9
11 13 15 17 19 21 23 25
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTTFD1D8N02P1E
TYPICAL CHARACTERISTICS − Q1
10K
1K
10
V
= 13 V
= 15 A
DS
9
8
7
6
5
4
3
2
I
D
C
T = 25°C
J
ISS
C
OSS
100
Q
GD
Q
GS
C
RSS
10
1
V
= 0 V
GS
T = 25°C
J
1
0
f = 1 MHz
0
5
10
15
20
25
0
2
4
6
8
10
12
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
100
V
V
= 4.5 V
= 15 V
GS
V
GS
= 0 V
DS
I
D
= 18 A
10
1
t
d(off)
10
t
d(on)
t
f
t
r
T = 125°C
T = 25°C
T = −55°C
J
J
J
1
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
T
= 25°C
A
1000
100
10
Single Pulse
= 158°C/W
R
q
JA
10 ms
25°C
10
100 ms
1 ms
10 ms
100°C
1
100 ms
R
Limit
1 s
10 s
DC
DS(on)
0.1
125°C
Thermal Limit
Package Limit
0.01
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
V
DS
, DRAIN−SOURCE VOLTAGE(V)
T , TIME IN AVALANCHE (s)
AV
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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NTTFD1D8N02P1E
TYPICAL CHARACTERISTICS − Q1
1000
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
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6
NTTFD1D8N02P1E
TYPICAL CHARACTERISTICS − Q2
120
120
100
80
V
GS
= 10 V to 3.2 V
100
80
2.8 V
2.6 V
60
60
T = 25°C
J
40
40
20
0
20
0
T = 125°C
J
T = −55°C
J
0
1
2
3
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 14. On−Region Characteristics
Figure 15. Transfer Characteristics
10
9
2.0
1.5
1.0
T = 25°C
D
T = 25°C
J
J
I
= 29 A
8
7
V
= 4.5 V
= 10 V
GS
6
V
GS
5
4
3
0.5
0
2
1
0
2
3
4
5
6
7
8
9
10
10 20 30 40 50 60 70 80 90 100 110 120
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 16. On−Resistance vs. Gate−to−Source
Figure 17. On−Resistance vs. Drain Current
Voltage
and Gate Voltage
1.8
100K
10K
V
= 10 V
= 29 A
GS
1.6
1.4
1.2
1.0
0.8
T = 150°C
J
I
D
T = 125°C
J
1K
T = 85°C
J
100
T = 25°C
J
10
1
0.6
0.4
0.1
−50
−25
0
25
50
75
100
125
150
5
7
9
11 13 15 17 19 21 23 25
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 18. On−Resistance Variation with
Figure 19. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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7
NTTFD1D8N02P1E
TYPICAL CHARACTERISTICS − Q2
10K
1K
10
V
= 13 V
= 29 A
C
DS
ISS
9
8
7
6
5
4
3
2
I
D
T = 25°C
J
C
OSS
100
C
RSS
Q
GD
Q
GS
10
1
V
= 0 V
GS
T = 25°C
J
1
0
f = 1 MHz
0
5
10
15
20
25
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 20. Capacitance Variation
Figure 21. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
V
V
= 4.5 V
= 13 V
= 29 A
GS
V
GS
= 0 V
100
10
DS
I
D
t
d(off)
t
r
t
d(on)
10
1
t
f
1
T = 125°C
J
T = 25°C
T = −55°C
J
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 22. Resistive Switching Time Variation
vs. Gate Resistance
Figure 23. Diode Forward Voltage vs. Current
100
T
= 25°C
A
1000
100
10
Single Pulse
= 132°C/W
10 ms
R
q
JA
100 ms
25°C
10
1 ms
10 ms
100 ms
1 s
10 s
DC
100°C
1
125°C
R
Limit
DS(on)
0.1
Thermal Limit
Package Limit
0.01
1
0.01
0.1
1
10
100
0.00001 0.0001 0.001
0.01
0.1
1
10
V
DS
, DRAIN−SOURCE VOLTAGE(V)
T , TIME IN AVALANCHE (s)
AV
Figure 24. Safe Operating Area
Figure 25. IPEAK vs. Time in Avalanche
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NTTFD1D8N02P1E
TYPICAL CHARACTERISTICS − Q2
1000
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
0.01
0.001
Single Pulse
0.0001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 26. Thermal Characteristics
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 3.3X3.3, 0.65P
CASE 483AZ
ISSUE B
DATE 14 FEB 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13675G
PQFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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