NTTFD4D1N03P1E [ONSEMI]
Dual Power MOSFETs, N-Channel, Symmetric, 3x3mm, 30V/4.5mΩ, 54A ;
| 型号： | NTTFD4D1N03P1E |
| 厂家： | 
ONSEMI |
| 描述： | Dual Power MOSFETs, N-Channel, Symmetric, 3x3mm, 30V/4.5mΩ, 54A |
| 文件： | 总11页 (文件大小：351K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power,
FET
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
N-Channel, PowerTrench[
Power Clip, Symmetric Dual
30 V
4.3 mW @ 10 V
5.4 mW @ 4.5 V
3.5 mW @ 10 V
4.5 mW @ 4.5 V
Q1
30 V
54 A
54 A
Q2
30 V
NTTFD4D1N03P1E
Features
• Latest 30 V MOSFET Technology with Optimized Figure−of−Merit
ELECTRICAL CONNECTION
• Less Junction Capacitance for High Switching Frequency Application
• Lower Q /Q for Shoot−Through Preventing
GD GS
• Small Footprint (3.3mm x 3.3mm) for Compact Design
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• DC−DC Converters
• System Voltage Rails
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Q1
Q2
Unit
V
V
DSS
30
30
3EUN
AYWW
V
GS
+16
−12
+16
−12
V
PIN1
WQFN12
3.3X3.3, 0.65P
CASE 510CJ
Continuous Drain
Current R
I
54
38
20
54
38
20
A
T
T
= 25°C
= 85°C
D
C
q
JC
Steady
State
(Note 3)
C
3EUN = Specific Device Code
Power Dissipation
P
W
A
D
D
D
T
C
= 25°C
A
Y
WW
= Assembly Location
= Year
R
(Note 3)
q
JC
Continuous Drain
Current R
I
D
15
11
15
11
T = 25°C
A
= Work Week
q
JA
Steady T = 85°C
State
(Notes 1, 3)
A
Power Dissipation
P
I
1.7
1.7
W
A
T = 25°C
A
ORDERING INFORMATION
R
(Notes 1, 3)
q
JA
†
Continuous Drain
Current R
12
8
12
8
T = 25°C
A
Device
NTTFD4D1N03P1E
Package
Shipping
D
q
JA
WQFN12
(Pb−Free)
3000 / Tape &
Reel
Steady T = 85°C
State
(Notes 2, 3)
A
Power Dissipation
P
1.0
1.0
W
T = 25°C
A
R
(Notes 2, 3)
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Pulsed Drain Current T = 25°C, t = 10 ms
I
DM
408
74
408
74
A
A
p
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy
Q1: I = 7 A , L = 3 mH (Note 4)
L
pk
Q2: I = 7 A , L = 3 mH (Note 4)
L
pk
Operating Junction and Storage Temperature T , T
−55 to + 150
°C
°C
J
stg
Lead Temperature for Soldering
T
L
260
Purposes (1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.
2. Surface−mounted on FR4 board using minimum pad size, 2 oz. Cu pad.
3. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
Actual continuous current will be limited by thermal & electro−mechanical
application board design. R
is determined by the user’s board design.
q
JC
4. Q1 100% UIS tested at L = 3 mH, IAS = 7 A.
Q2 100% UIS tested at L = 3 mH, IAS = 7 A.
5. This device is Class 1B ESD HBM Rating.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
November, 2021 − Rev. 0
NTTFD4D1N03P1E/D
NTTFD4D1N03P1E
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Q1 Max
6.0
Q2 Max
6.0
Unit
Junction−to−Case − Steady State (Notes 1, 3)
Junction−to−Ambient − Steady State (Notes 1, 3)
Junction−to−Ambient − Steady State (Notes 2, 3)
R
°C/W
q
JC
R
70
70
q
JA
R
120
120
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
FET
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown
V
V
V
= 0 V, I = 1 mA
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
30
30
(BR)DSS
GS
D
V
mV/°C
mA
Voltage
= 0 V, I = 1 mA
GS
D
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V
/
I
= 1 mA, ref to 25°C
= 1 mA, ref to 25°C
17
17
(BR)DSS
D
D
T
J
I
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 24 V
T = 25°C
J
1.0
1.0
100
100
DSS
GS
DS
V
Gate−to−Source Leakage
Current
I
V
V
= 0 V, V = +16 V / −12 V
GS
GSS
DS
nA
= 0 V, V = +16 V / −12 V
DS
GS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
Q1
Q2
Q1
Q2
Q1
1.2
1.2
1.61
1.64
4.5
4.5
3.8
4.7
2.9
3.9
52
2.2
2.2
V
= V , I = 270 mA
DS D
GS(TH)
GS
V
V
GS
= V , I = 270 mA
DS D
Negative Threshold
Temperature Coefficient
V
/T
I
D
I
D
= 270 mA, ref to 25°C
= 270 mA, ref to 25°C
GS(TH) J
mV/°C
Drain−to−Source On Resistance
R
V
= 10 V, I = 10 A
4.3
5.4
3.5
4.5
DS(on)
GS
D
V
= 4.5 V, I = 10 A
D
GS
mW
V
= 10 V, I = 10 A
Q2
GS
GS
D
V
= 4.5 V, I = 10 A
D
Forward Transconductance
g
FS
V
= 5 V, I = 10 A
Q1
Q2
Q1
Q2
DS
DS
D
S
V
= 5 V, I = 10 A
57
D
Gate−Resistance
R
T = 25°C
A
0.8
0.8
G
W
CHARGES AND CAPACITANCES
Input Capacitance
C
Q1
Q2
Q1
Q2
Q1
Q2
1103
972
335
309
19
ISS
pF
pF
pF
Output Capacitance
C
OSS
RSS
V
GS
= 0 V, V = 15 V, f = 1 MHz
DS
Reverse Transfer Capacitance
C
25
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
NTTFD4D1N03P1E
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
FET
Min
Typ
Max
Unit
CHARGES AND CAPACITANCES
Total Gate Charge
Q
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
6.7
6.3
1.4
1.4
2.8
2.5
15
G(TOT)
nC
nC
nC
nC
Gate−to−Drain Charge
Gate−to−Source Charge
Total Gate Charge
Q
Q
GD
Q1: V = 4.5 V, V = 15 V; I = 10 A
GS
DS
D
Q2: V = 4.5 V, V = 15 V; I = 10 A
GS
DS
D
GS
Q
Q1: V = 10 V, V = 15 V; I = 10 A
GS DS D
G(TOT)
Q2: V = 10 V, V = 15 V; I = 10 A
14
GS
DS
D
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 7)
GS
Turn−On Delay Time
t
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
12
11
d(ON)
ns
ns
ns
ns
Rise Time
t
r
7.5
5.2
16
V
= 4.5 V
DD
GS
Q1: I = 10 A, V = 15 V, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
Q2: I = 10 A, V = 15 V, R = 6 W
D DD G
14.3
5.2
4.9
t
f
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 7)
Turn−On Delay Time
t
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8.3
7.5
2.0
1.8
22
d(ON)
ns
ns
ns
ns
Rise Time
t
r
V
= 10 V
DD
GS
Q1: I = 10 A, V = 15 V, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
Q2: I = 10 A, V = 15 V, R = 6 W
D DD G
20
t
f
3.2
3.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
Q1
Q2
0.80
0.65
0.79
0.65
23
1.2
1.2
SD
J
V
S
= 0 V,
GS
I
= 10 A
T = 125°C
J
V
T = 25°C
J
V
S
= 0 V,
= 10 A
GS
I
T = 125°C
J
Reverse Recovery Time
t
Q1
Q2
Q1
Q2
RR
ns
V
S
= 0 V, V = 15 V
DD
22
GS
Q1: I = 10 A, dI /dt = 100 A/ms
S
Reverse Recovery Charge
Q
9.4
RR
Q2: I = 10 A, dI /dt = 100 A/ms
S S
nC
9.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
NTTFD4D1N03P1E
TYPICAL CHARACTERISTICS − Q1
60
50
40
30
20
60
10 V to 3.6 V
V
GS
= 3.2 V
V
DS
= 10 V
50
40
30
20
2.8 V
T = 25°C
J
2.6 V
2.4 V
10
0
10
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
45
40
35
30
25
8
7
6
5
4
3
T = 25°C
J
T = 25°C
D
J
I
= 10 A
V
= 4.5 V
= 10 V
GS
20
15
10
V
GS
2
1
5
0
2
3
4
5
6
7
8
9
10
5
10
15
20
25
30
35
40
45
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100000
1.8
1.6
1.4
1.2
1.0
T = 150°C
J
V
= 10 V
= 10 A
GS
10000
1000
100
10
I
D
T = 125°C
J
T = 85°C
J
T = 25°C
J
1
0.8
0.6
0.1
0.01
5
10
15
20
25
30
−50 −25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTTFD4D1N03P1E
TYPICAL CHARACTERISTICS − Q1
10000
10
9
C
8
7
6
5
4
3
2
1
0
ISS
1000
100
C
OSS
Q
GD
Q
GS
C
RSS
10
1
V
DS
= 15 V
V
= 0 V
GS
I
D
= 10 A
T = 25°C
J
T = 25°C
J
f = 1 MHz
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
16
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
10
V
V
= 10 V
= 15 V
= 10 A
V
GS
= 0 V
GS
DS
I
D
t
d(off)
100
10
t
f
t
r
t
d(on)
1
1
T = 125°C
T = 25°C
T = −55°C
J
J
J
0.1
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
10 ms
T
= 25°C
J(initial)
100 ms
10
T
= 125°C
= 100°C
J(initial)
V
≤ 10 V
GS
Single Pulse
= 25°C
500 ms
1 ms
10 ms
100 ms
T
C
T
J(initial)
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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5
NTTFD4D1N03P1E
TYPICAL CHARACTERISTICS − Q1
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.000001
0.01
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 13. Thermal Characteristics
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NTTFD4D1N03P1E
TYPICAL CHARACTERISTICS − Q2
60
50
40
30
20
60
10 V to 3.6 V
V
GS
= 3.2 V
V
DS
= 10 V
50
40
30
20
2.8 V
T = 25°C
J
2.6 V
2.4 V
10
0
10
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
5
5
1
2
3
4
5
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
, GATE−TO−SOURCE VOLTAGE (V)
DS
GS
Figure 14. On−Region Characteristics
Figure 15. Transfer Characteristics
8
7
6
5
4
3
45
40
35
30
25
T = 25°C
T = 25°C
J
J
I
D
= 10 A
V
GS
= 4.5 V
= 10 V
20
15
10
V
GS
2
1
5
0
2
3
4
5
6
7
8
9
10
10
15
20
25
30
35
40
45
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 16. On−Resistance vs. Gate−to−Source
Figure 17. On−Resistance vs. Drain Current
Voltage
and Gate Voltage
100000
10000
1000
1.8
1.6
1.4
1.2
1.0
V
I
= 10 V
GS
T = 150°C
J
= 10 A
D
T = 125°C
J
100
10
T = 85°C
J
T = 25°C
J
1
0.8
0.6
0.1
10
15
20
25
30
−50 −25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 18. On−Resistance Variation with
Figure 19. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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NTTFD4D1N03P1E
TYPICAL CHARACTERISTICS − Q2
10000
10
9
8
7
6
5
4
3
2
1
0
C
ISS
1000
100
C
OSS
Q
GD
Q
C
GS
RSS
10
1
V
= 15 V
= 10 A
DS
V
= 0 V
GS
I
D
T = 25°C
J
T = 25°C
J
f = 1 MHz
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 20. Capacitance Variation
Figure 21. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
10
100
10
V
V
= 10 V
= 15 V
= 10 A
GS
V
GS
= 0 V
DS
I
D
t
d(off)
t
f
t
r
t
d(on)
1
1
T = 125°C
T = 25°C
T = −55°C
J
J
J
0.1
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 22. Resistive Switching Time Variation
vs. Gate Resistance
Figure 23. Diode Forward Voltage vs. Current
1000
100
10
100
10 ms
T
= 25°C
J(initial)
100 ms
10
T
= 125°C
= 100°C
J(initial)
V
≤ 10 V
GS
Single Pulse
= 25°C
500 ms
1 ms
10 ms
100 ms
T
C
T
J(initial)
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 24. Maximum Rated Forward Biased
Safe Operating Area
Figure 25. Maximum Drain Current vs. Time in
Avalanche
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NTTFD4D1N03P1E
TYPICAL CHARACTERISTICS − Q2
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.000001
0.01
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 26. Thermal Characteristics
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NTTFD4D1N03P1E
PACKAGE DIMENSIONS
WQFN12 3.3X3.3, 0.65P
CASE 510CJ
ISSUE O
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10
NTTFD4D1N03P1E
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