NTMFS4C027NT1G [ONSEMI]
Power MOSFET;
| 型号： | NTMFS4C027NT1G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS4C027N
Power MOSFET
30 V, 52 A, Single N−Channel, SO−8 FL
Features
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
V
R
MAX
I MAX
D
Applications
(BR)DSS
DS(ON)
• CPU Power Delivery
• DC−DC Converters
4.8 mW @ 10 V
30 V
52 A
7.47 mW @ 4.5 V
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
D (5−8)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
Unit
V
V
DSS
30
20
V
GS
V
Continuous Drain
Current R
T = 25°C
I
16.4
A
A
D
G (4)
q
JA
T = 80°C
A
12.3
2.51
(Note 1)
Power Dissipation
(Note 1)
T = 25°C
A
P
W
A
D
D
D
D
S (1,2,3)
N−CHANNEL MOSFET
R
q
JA
Continuous Drain
T = 25°C
A
I
D
25.3
19.0
6.0
Current R
(Note 1)
≤ 10 s
q
JA
T = 80°C
A
MARKING
DIAGRAMS
D
Power Dissipation
≤ 10 s (Note 1)
T = 25°C
A
P
I
W
A
R
q
JA
Steady
State
S
S
S
D
D
Continuous Drain
Current R
T = 25°C
A
9.0
6.8
D
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
4C027
AYWZZ
q
JA
T = 80°C
A
(Note 2)
Power Dissipation
(Note 2)
G
T = 25°C
A
P
I
0.76
W
A
1
R
D
q
JA
Continuous Drain
Current R
T
= 25°C
=80°C
= 25°C
52
39
C
D
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
q
JC
T
C
(Note 1)
Power Dissipation
(Note 1)
T
C
P
25.5
W
R
q
JC
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
144
560
A
A
A
p
ORDERING INFORMATION
Pulsed Source
Current (Body Diode)
T = 25°C, t = 10 ms
I
SM
A
p
†
Device
Package
Shipping
Current Limited by Package
T = 25°C
A
I
80
A
Dmax
NTMFS4C027NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
Operating Junction and Storage
Temperature
T ,
−55 to
+150
°C
J
T
STG
NTMFS4C027NT3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
Source Current (Body Diode)
Drain to Source DV/DT
I
23
7.0
42
A
S
dV/d
V/ns
mJ
t
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Single Pulse Drain−to−Source Avalanche
E
AS
Energy (T = 25°C, V = 10 V, I = 29 A ,
J
GS
L
pk
L = 0.1 mH, R = 25 W) (Note 3)
GS
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at T = 25°C,
J
V
GS
= 10 V, I = 21 Apk, E = 22 mJ.
L AS
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
August, 2016 − Rev. 1
NTMFS4C027N/D
NTMFS4C027N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
4.9
Unit
Junction−to−Case (Drain)
R
q
JC
q
JA
q
JA
q
JA
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – Steady State (Note 5)
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
R
R
R
49.8
164.6
21.0
°C/W
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
30
34
V
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
(transient)
V
V
= 0 V, I
= 8.4 A,
= 100 ns
(BR)DSSt
GS
case
D(aval)
T
= 25°C, t
transient
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
13.8
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 24 V
T = 25°C
1.0
10
DSS
GS
J
V
DS
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.3
2.1
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
4.9
4.0
6.01
42
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 18 A
= 30 A
4.8
DS(on)
GS
D
mW
V
GS
= 4.5 V
7.47
D
Forward Transconductance
Gate Resistance
g
FS
V
= 1.5 V, I = 15 A
S
DS
D
R
T = 25°C
A
0.3
1.0
2.0
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
1113
702
39
1670
ISS
Output Capacitance
C
V
= 0 V, f = 1 MHz, V = 15 V
pF
nC
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Capacitance Ratio
C
C
/C
V
GS
= 0 V, V = 15 V, f = 1 MHz
0.035
8.4
RSS ISS
DS
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
Q
1.8
G(TH)
Q
3.5
V
= 4.5 V, V = 15 V; I = 30 A
GS
GD
GP
GS
DS
D
Q
V
3.3
3.4
V
Q
V
= 10 V, V = 15 V; I = 30 A
18.2
nC
G(TOT)
GS
DS
D
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
t
9.0
33
d(ON)
t
r
V
= 4.5 V, V = 15 V,
DS
GS
ns
I
D
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
15
d(OFF)
t
f
4.0
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4C027N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
7.0
26
d(ON)
Rise Time
t
r
V
I
= 10 V, V = 15 V,
DS
GS
ns
= 15 A, R = 3.0 W
D
G
Turn−Off Delay Time
t
19
d(OFF)
Fall Time
t
f
3.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.79
0.66
28.3
14.5
13.8
15.3
1.1
SD
J
V
= 0 V,
= 10 A
GS
V
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
t
b
Reverse Recovery Charge
Q
nC
RR
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4C027N
TYPICAL CHARACTERISTICS
80
100
90
80
70
60
50
4.5 V to 10 V
V
DS
= 3 V
4.2 V
4.0 V
70
60
50
40
30
20
T = 25°C
J
3.8 V
3.6 V
3.4 V
40
30
20
T = 125°C
J
3.2 V
T = 25°C
J
3.0 V
2.8 V
10
0
10
0
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.010
0.009
0.008
0.007
0.006
0.005
0.004
I
D
= 30 A
T = 25°C
J
V
= 4.5 V
GS
V
= 10 V
GS
0.003
0.002
0.004
0.002
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
10
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
10000
1000
V
GS
= 0 V
T = 150°C
I
V
= 30 A
J
D
= 10 V
GS
1.5
1.4
T = 125°C
J
1.3
1.2
1.1
1.0
0.9
0.8
0.7
T = 85°C
J
100
10
−50 −25
0
25
50
75
100
125 150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NTMFS4C027N
TYPICAL CHARACTERISTICS
10
1800
1600
1400
1200
1000
800
Q
T
V
= 0 V
GS
T = 25°C
J
8
6
4
C
C
iss
Q
Q
oss
gd
gs
600
T = 25°C
DD
J
V
= 15 V
400
2
0
V
GS
= 10 V
200
0
I
D
= 30 A
C
rss
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18
16
14
12
10
8
1000
100
V
= 15 V
= 15 A
= 10 V
DD
V
GS
= 0 V
I
D
V
GS
t
r
t
f
t
d(off)
t
d(on)
10
1
6
T = 125°C
J
4
T = 25°C
J
2
0
0.4
1
10
R , GATE RESISTANCE (W)
100
0.5
0.6
0.7
0.8
0.9
1.0
V
, SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
22
1000
100
10
20
18
16
I = 21 A
D
10 ms
100 ms
14
12
10
8
1 ms
10 ms
0 V < V < 10 V
Single Pulse
GS
1
T
C
= 25°C
6
0.1
R
Limit
DS(on)
dc
4
Thermal Limit
Package Limit
2
0
0.01
0.01
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTMFS4C027N
TYPICAL CHARACTERISTICS
100
10
Duty Cycle = 50%
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
100
80
70
60
50
40
30
20
T = 25°C
A
T = 85°C
A
10
10
0
1
1.E−08 1.E−07
0
10
20
30
40
(A)
50
60
70
1.E−06
1.E−05
1.E−04 1.E−03
I
D
PULSE WIDTH (SECONDS)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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6
NTMFS4C027N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
STYLE 1:
A
_
_
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
RECOMMENDED
SOLDERING FOOTPRINT*
SIDE VIEW
DETAIL A
2X
5. DRAIN
0.495
4.560
2X
8X b
A B
1.530
0.10
0.05
C
c
e/2
e
L
1
4
3.200
1.330
4.530
K
E2
0.29X05
0.965
PIN 5
(EXPOSED PAD)
M
L1
1
D2
BOTTOM VIEW
4X
1.000
0.750
G
1.270
PITCH
4X
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS4C027N/D
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