NTMFS4C028NT1G [ONSEMI]
Power MOSFET;型号: | NTMFS4C028NT1G |
厂家: | ONSEMI |
描述: | Power MOSFET |
文件: | 总7页 (文件大小:92K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTMFS4C028N
Power MOSFET
30 V, 52 A, Single N−Channel, SO−8 FL
Features
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
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• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
V
R
MAX
I MAX
D
Compliant
(BR)DSS
DS(ON)
4.73 mW @ 10 V
7.0 mW @ 4.5 V
Applications
30 V
52 A
• CPU Power Delivery
• DC−DC Converters
D (5−8)
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
30
Unit
V
V
DSS
G (4)
V
GS
20
V
Continuous Drain
Current R
T = 25°C
I
16.4
A
A
D
q
JA
T = 80°C
A
12.3
2.51
S (1,2,3)
N−CHANNEL MOSFET
(Note 1)
Power Dissipation
(Note 1)
T = 25°C
A
P
W
A
D
D
D
D
R
q
JA
MARKING
DIAGRAMS
D
Continuous Drain
T = 25°C
A
I
D
25.3
19.0
6.0
Current R
(Note 1)
≤ 10 s
q
JA
T = 80°C
A
S
S
S
D
D
Power Dissipation
≤ 10 s (Note 1)
T = 25°C
A
P
I
W
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
R
q
JA
4C028
AYWZZ
Steady
State
Continuous Drain
Current R
T = 25°C
A
9.0
6.8
D
G
q
JA
1
T = 80°C
A
(Note 2)
Power Dissipation
(Note 2)
D
T = 25°C
A
P
I
0.76
W
A
A
Y
= Assembly Location
= Year
R
q
JA
Continuous Drain
Current R
T
= 25°C
=80°C
= 25°C
52
39
C
D
W
ZZ
= Work Week
= Lot Traceabililty
q
JC
T
C
(Note 1)
Power Dissipation
(Note 1)
T
C
P
25.5
W
A
R
ORDERING INFORMATION
q
JC
Pulsed Drain
Current
T = 25°C, t = 10 ms
I
DM
146
A
p
†
Device
Package
Shipping
NTMFS4C028NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
Current Limited by Package
T = 25°C
A
I
80
A
Dmax
Operating Junction and Storage
Temperature
T ,
−55 to
+150
°C
J
T
STG
NTMFS4C028NT3G
SO−8 FL
5000 /
(Pb−Free)
Tape & Reel
Source Current (Body Diode)
Drain to Source dV/dt
I
23
7.0
42
A
S
dV/d
V/ns
mJ
t
†For information on tape and reel specifications,
including part orientation and tape sizes, please
Single Pulse Drain−to−Source Avalanche
E
AS
Energy (T = 25°C, V = 10 V, I = 29 A ,
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
J
GS
L
pk
L = 0.1 mH, R = 25 W) (Note 3)
GS
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. Parts are 100% tested at T = 25°C, V = 10 V, I = 20 A , EAS = 20 mJ.
J
GS
L
pk
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
August, 2016 − Rev. 1
NTMFS4C028N/D
NTMFS4C028N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
4.9
Unit
Junction−to−Case (Drain)
R
q
JC
q
JA
q
JA
q
JA
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – Steady State (Note 5)
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
R
R
R
49.8
164.6
21.0
°C/W
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
30
34
V
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
(transient)
V
V
= 0 V, I
= 8.4 A,
= 100 ns
(BR)DSSt
GS
case
D(aval)
T
= 25°C, t
transient
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
14.4
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 24 V
T = 25°C
1.0
10
DSS
GS
J
V
DS
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.3
2.1
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
4.8
3.9
5.8
50
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 30 A
= 18 A
4.73
7.0
DS(on)
GS
D
mW
V
GS
= 4.5 V
D
Forward Transconductance
Gate Resistance
g
FS
V
= 1.5 V, I = 15 A
S
DS
D
R
T = 25°C
A
0.3
1.0
2.0
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
1252
610
126
0.101
10.9
1.9
ISS
Output Capacitance
C
V
= 0 V, f = 1 MHz, V = 15 V
pF
nC
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Capacitance Ratio
C
C
/C
V = 0 V, V = 15 V, f = 1 MHz
GS DS
RSS ISS
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
Q
G(TH)
Q
3.4
V
GS
= 4.5 V, V = 15 V; I = 30 A
GS
GD
GP
DS
D
Q
V
5.4
3.1
V
Q
V
GS
= 10 V, V = 15 V; I = 30 A
22.2
nC
G(TOT)
DS
D
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
t
10
32
16
6.0
d(ON)
t
r
V
= 4.5 V, V = 15 V,
DS
GS
ns
I
D
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4C028N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
7.0
28
d(ON)
Rise Time
t
r
V
I
= 10 V, V = 15 V,
DS
GS
ns
= 15 A, R = 3.0 W
D
G
Turn−Off Delay Time
t
20
d(OFF)
Fall Time
t
f
4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.79
0.65
31
1.1
SD
RR
J
V
= 0 V,
= 10 A
GS
V
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
15
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
t
b
16
Reverse Recovery Charge
Q
15
nC
RR
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4C028N
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
100
4.5 V to 10 V
4.0 V
90
80
70
60
50
40
30
20
V
DS
= 5 V
T = 25°C
J
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
T = 125°C
J
2.8 V
10
0
10
0
T = −55°C
J
V
= 2.6 V
T = 25°C
GS
J
0
1
2
3
4
5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
, GATE−TO−SOURCE VOLTAGE (V)
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.026
0.024
0.022
0.020
0.018
0.016
0.014
0.009
0.008
0.007
0.006
0.005
I
D
= 30 A
T = 25°C
J
V
= 4.5 V
GS
0.012
0.010
0.008
0.006
V
= 10 V
GS
0.004
0.003
0.004
0.002
3
4
5
6
7
8
9
10
10
20
30
40
50
60
70
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1600
1.7
1.6
1.5
V
= 0 V
GS
V
= 10 V
= 30 A
T = 25°C
J
GS
1400
1200
1000
800
C
iss
I
D
1.4
1.3
1.2
1.1
1.0
0.9
C
C
oss
600
400
rss
200
0
0.8
0.7
−50 −25
0
25
50
75
100 125
150
0
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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4
NTMFS4C028N
TYPICAL CHARACTERISTICS
10
8
1000
V
V
= 10 V
= 15 V
Q
GS
T
DD
I
D
= 15 A
t
d(off)
100
t
f
6
4
t
r
Q
Q
GD
GS
10
1
t
d(on)
V
V
= 10 V
= 15 V
= 30 A
GS
DD
2
0
I
D
T = 25°C
J
0
2
4
6
8
10 12 14 16 18 20 22 24
1
10
R , GATE RESISTANCE (W)
100
Q , TOTAL GATE CHARGE (nC)
G
G
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
20
18
16
1000
100
10
0 V < V < 10 V
GS
V
GS
= 0 V
10 ms
14
12
10
8
100 ms
T = 25°C
J
T = 125°C
J
1 ms
10 ms
1
6
4
R
Limit
DS(on)
0.1
dc
Thermal Limit
Package Limit
2
0
0.01
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.01
0.1
1
10
100
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
80
70
60
50
40
30
20
20
18
16
14
12
10
8
I
D
= 20 A
6
4
10
0
2
0
25
50
75
100
125
150
0
5
10 15 20 25 30 35 40 45 50
(A)
T , STARTING JUNCTION TEMPERATURE (°C)
I
D
J
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
Figure 12. GFS vs. ID
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5
NTMFS4C028N
TYPICAL CHARACTERISTICS
100
10
1
1.E−08 1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
PULSE WIDTH (sec)
Figure 13. Avalanche Characteristics
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 14. Thermal Response
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6
NTMFS4C028N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
RECOMMENDED
SOLDERING FOOTPRINT*
SIDE VIEW
DETAIL A
5. DRAIN
2X
0.495
4.560
8X b
A B
2X
1.530
0.10
0.05
C
c
e/2
e
L
1
4
3.200
K
4.530
E2
1.330
PIN 5
0.29X05
0.965
M
(EXPOSED PAD)
L1
1
D2
BOTTOM VIEW
G
4X
1.000
4X
1.270
PITCH
0.750
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS4C028N/D
相关型号:
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