NTLJF4156NTAG [ONSEMI]
单 N 沟道功率 MOSFET 和肖特基二极管 30V 4.6A 70mΩ;
| 型号： | NTLJF4156NTAG |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道功率 MOSFET 和肖特基二极管 30V 4.6A 70mΩ 肖特基二极管 |
| 文件： | 总10页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTLJF4156N
MOSFET – Power,
N-Channel with Schottky
Barrier Diode, Schottky
Diode, mCool, WDFN
2X2 mm
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MOSFET
30 V, 4.6 A, 2.0 A
V
R
MAX
I MAX (Note 1)
D
(BR)DSS
DS(on)
70 mW @ 4.5 V
90 mW @ 2.5 V
125 mW @ 1.8 V
250 mW @ 1.5 V
Features
30 V
4.6 A
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
• Co−Packaged MOSFET and Schottky For Easy Circuit Layout
• R
Rated at Low V
Levels, V = 1.5 V
GS(on) GS
DS(on)
SCHOTTKY DIODE
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• Low VF Schottky
V
R
MAX
V TYP
F
I MAX
F
30 V
0.47 V
2.0 A
• This is a Pb−Free Device
Applications
• DC−DC Converters
• Li−Ion Battery Applications in Cell Phones, PDA’s, Media Players
• Color Display and Camera Flash Regulators
D
A
K
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
S
Parameter
Drain−to−Source Voltage
Symbol
Value
30
Unit
V
N−CHANNEL MOSFET
SCHOTTKY DIODE
V
DSS
MARKING
DIAGRAM
Gate−to−Source Voltage
V
8.0
3.7
2.7
4.6
1.5
V
GS
Continuous Drain
Current (Note 1)
I
A
T = 25°C
D
J
Steady
State
T = 85°C
J
1
2
3
6
5
4
1
JLMG
WDFN6
CASE 506AN
t ≤ 5 s T = 25°C
J
G
Power Dissipation
(Note 1)
P
W
A
Steady
State
D
JL = Specific Device Code
T = 25°C
J
M
G
= Date Code
= Pb−Free Package
t ≤ 5 s
2.3
2.5
Continuous Drain
Current (Note 2)
I
T = 25°C
J
D
(Note: Microdot may be in either location)
T = 85°C
J
1.8
Steady
State
PIN CONNECTIONS
Power Dissipation
(Note 2)
P
0.71
D
T = 25°C
J
K
Pulsed Drain Current
t = 10 ms
I
20
A
p
DM
A
N/C
D
K
G
S
1
2
3
6
5
4
Operating Junction and Storage Temperature T , T
−55 to
150
°C
J
STG
Source Current (Body Diode) (Note 2)
I
S
2.4
A
D
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
May, 2019 − Rev. 4
NTLJF4156N/D
NTLJF4156N
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
2
of 30 mm , 2 oz. Cu.
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2
NTLJF4156N
SCHOTTKY DIODE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Symbol
Value
30
Unit
V
V
RRM
V
R
30
V
Average Rectified Forward Current
I
F
2.0
A
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
83
Unit
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t ≤ 5 s (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
R
q
JA
R
54
°C/W
q
JA
R
180
q
JA
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
2
4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm , 2 oz. Cu.
MOSFET ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I
D
= 250 mA, Ref to 25°C
18.1
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
10
mA
DSS
J
V
DS
= 24 V, V = 0 V
GS
T = 85°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V
=
8.0 V
100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
0.4
0.7
2.8
1.0
V
GS(TH)
GS
DS
D
Gate Threshold
Temperature Coefficient
V
/T
J
mV/°C
GS(TH)
Drain−to−Source On−Resistance
R
V
V
V
V
= 4.5, I = 2.0 A
47
56
70
90
mW
DS(on)
GS
GS
GS
GS
D
= 2.5, I = 2.0 A
D
= 1.8, I = 1.8 A
88
125
250
D
= 1.5, I = 1.5 A
133
4.5
D
Forward Transconductance
g
FS
V
DS
= 10 V, I = 2.0 A
S
D
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
427
51
pF
ISS
V
= 0 V, f = 1.0 MHz,
GS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
V
= 15 V
DS
32
Q
5.4
0.5
0.8
1.24
3.7
6.5
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
G(TH)
V
GS
= 4.5 V, V = 15 V,
DS
I
D
= 2.0 A
Q
GS
GD
Q
R
W
G
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTLJF4156N
MOSFET ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
4.8
9.2
ns
d(ON)
Rise Time
t
r
V
= 4.5 V, V = 15 V,
DD
GS
D
I
= 2.0 A, R = 2.0 W
G
Turn−Off Delay Time
t
14.2
1.7
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
V
T = 25°C
0.78
0.62
10.5
7.6
1.2
SD
J
V
= 0 V, IS = 2.0 A
V
GS
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
ns
a
V
= 0 V, d /d = 100 A/ms,
ISD t
GS
I = 2.0 A
S
Discharge Time
t
2.9
b
Reverse Recovery Time
Q
5.0
nC
RR
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
I = 0.1 A
Min
Typ
0.34
0.47
17
Max
0.39
0.53
20
Unit
Maximum Instantaneous
Forward Voltage
V
F
V
F
I = 1.0 A
F
Maximum Instantaneous
Reverse Current
I
R
V
R
V
R
V
R
= 30 V
= 20 V
= 10 A
mA
3.0
8.0
2.0
4.5
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 85°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
I = 0.1 A
Min
Typ
0.22
0.40
0.22
0.11
0.06
Max
0.35
0.50
2.5
Unit
Maximum Instantaneous
Forward Voltage
V
F
V
F
I = 1.0 A
F
Maximum Instantaneous
Reverse Current
I
R
V
R
V
R
V
R
= 30 V
= 20 V
= 10 V
mA
1.6
1.2
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 125°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
I = 0.1 A
Min
Typ
0.2
Max
0.29
0.47
20
Unit
Maximum Instantaneous
Forward Voltage
V
F
V
F
I = 1.0 A
F
0.4
Maximum Instantaneous
Reverse Current
I
R
V
R
V
R
V
R
= 30 V
= 20 V
= 10 V
2.0
mA
1.1
10.9
8.4
0.63
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Capacitance
C
V
R
= 5.0 V, f = 1.0 MHz
38
pF
7. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
2
8. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz cu.
9. Pulse Test: pulse width v 300 ms, duty cycle v2%.
10.Switching characteristics are independent of operating junction temperatures.
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4
NTLJF4156N
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
5
6
V
GS
= 1.7 V to 8 V
T = 25°C
J
V
DS
≥ 10 V
1.6 V
4
3
4
1.5 V
1.4 V
2
1
0
2
0
T = 25°C
J
1.3 V
1.2 V
T = 100°C
J
T = −55°C
J
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.07
0.06
0.05
0.04
0.14
0.13
0.12
0.11
0.1
T = 25°C
J
V
GS
= 4.5 V
T = 100°C
J
V
= 1.8 V
GS
T = 25°C
J
0.09
0.08
0.07
0.06
V
V
= 2.5 V
= 4.5 V
GS
T = −55°C
J
0.03
0.02
GS
0.05
0.04
1.0
1.5
2.0
2.5
1
2
3
4
5
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance versus Drain Current
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100,000
10,000
1000
100
1.6
1.4
1.2
1.0
V
= 0 V
I
V
= 2 A
GS
D
= 4.5 V
GS
T = 150°C
J
T = 100°C
J
0.8
0.6
10
2
−50
−25
0
25
50
75
100 125
150
4
6
8
10 12 14 16 18 20 22 24 26 28 30
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
versus Voltage
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5
NTLJF4156N
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
5
18
V
DS
= V = 0 V
GS
T = 25°C
J
QT
1000
800
600
400
15
12
9
4
3
2
V
GS
V
DS
C
iss
Q
GS
Q
GD
C
6
rss
1
0
200
0
3
0
C
oss
I
= 2.0 A
D
T = 25°C
J
5
0
5
10
15
20
25
30
0
1
2
3
4
5
6
V
GS
V
DS
Q , TOTAL GATE CHARGE (nC)
G
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
Figure 7. Capacitance Variation
1000
100
3
V
= 0 V
V
= 15 V
= 2.0 A
= 4.5 V
GS
DD
T = 125°C
J
I
D
V
GS
T = 150°C
J
2
1
t
d(off)
t
T = 25°C
f
J
t
r
10
1
t
d(on)
0
0.3
1
10
R , GATE RESISTANCE (OHMS)
100
0.6
0.9
V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
G
SD
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
100
SINGLE PULSE
See Note 2 on Page 2
T
C
= 25°C
T = 150°C
J
10
1
10 ms
100 ms
1 ms
10 ms
0.1
0.01
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
dc
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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6
NTLJF4156N
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
1000
100
D = 0.5
0.2
0.1
*See Note 2 on Page 1
0.05
10
P
(pk)
0.02
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.01
1
READ TIME AT t
1
t
1
T
J(pk)
− T = P
R
q
(t)
JC
C
(pk)
t
2
SINGLE PULSE
0.00001 0.0001
DUTY CYCLE, D = t /t
1
2
0.1
0.000001
0.001
0.01
t, TIME (S)
0.1
1
10
100
1000
Figure 12. Thermal Response
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7
NTLJF4156N
TYPICAL SCHOTTKY PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
10
1.0
0.1
10
T = 85°C
J
1.0
T = 125°C
J
T = 85°C
J
T = 25°C
J
T = 125°C
J
T = 25°C
T = −55°C
J
J
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
V , MAXIMUM FORWARD VOLTAGE (VOLTS)
F
Figure 13. Typical Forward Voltage
Figure 14. Maximum Forward Voltage
1.0E+0
100E-3
1.0E+0
100E-3
T = 125°C
J
10E-3
10E-3
T = 125°C
J
1.0E-3
100E-6
10E-6
1.0E-3
100E-6
10E-6
T = 85°C
J
T = 85°C
J
T = 25°C
J
T = 25°C
J
1.0E-6
100E-9
1.0E-6
100E-9
0
10
20
30
0
10
20
30
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 15. Typical Reverse Current
Figure 16. Maximum Reverse Current
ORDERING INFORMATION
Device
†
Package
Shipping
NTLJF4156NT1G
WDFN6
3000 / Tape & Reel
3000 / Tape & Reel
(Pb−Free)
NTLJF4156NTAG
WDFN6
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 506AN
ISSUE H
DATE 25 JAN 2022
GENERIC
MARKING DIAGRAM*
1
XX M
XX = Specific Device Code
M
= Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON20861D
WDFN6 2x2, 0.65P
PAGE 1 OF 1
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