NTLJS14D0P03P8ZTAG [ONSEMI]
MOSFET, -30V P-Channel WDFN6;
| 型号： | NTLJS14D0P03P8ZTAG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET, -30V P-Channel WDFN6 |
| 文件： | 总8页 (文件大小：373K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
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MOSFET – Single, P-Channel,
POWERTRENCH)
-30 V, -11 A, 13.5 mW
NTLJS14D0P03P8Z
Description
www.onsemi.com
This device is an ultra low resistance P−Channel FET. It is designed
for power line load switching applications and reverse polarity
protection. It is especially optimized for voltage rails that can climb as
high as 25 V. Typical end systems include laptop computers, tablets
and mobile phone. Applications include battery protection, input
power line protection and charge path protection, including USB
and other charge paths. The NTLJS14D0P03P8Z has an enhanced
Pin 1
D
D
G
Source
Drain
D
D
V
GS
rating of 25 V specifically designed to simplify installation.
S
When used as reverse polarity protection, with gate tied to ground and
drain tied to V input, it is designed to support operating input voltages
that can raise as high as 25 V without the need for external Zener
protection on the gate. Its small 2 x 2 x 0.8 form factor make it an ideal
part for mobile and space constrained applications.
WDFN6
CASE 483AV
MARKING DIAGRAM
Features
• Max r
= 13.5 mW @ V = −10 V
GS
• 25 V V Extended Operating Rating
YWZZ
A676
DS(on)
GS
• 30 V V Blocking
• 2 x 2 mm Form Factor
• Low Profile − 0.8 mm Maximum
• Integrated Protection Diode
DS
YW
ZZ
A
= Date Code
= Assembly Lot Code
= Assembly Site Code
= Specific Device Code
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
676
Compliant
ELECTRICAL CONNECTION
D
6
D 1
D
D
D
G
D
2
3
5 D
4 S
D
S
D
G
S
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
May, 2021 − Rev. 0
NTLJS14D0P03P8Z/D
NTLJS14D0P03P8Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Ratings
−30
Unit
V
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current − Continuous,
− Pulsed
DS
GS
25
V
I
T = 25°C (Note 1a)
−11
A
D
A
(Note 3)
T = 25°C (Note 1a)
−165
2.4
P
D
Power Dissipation
W
A
Power Dissipation
T = 25°C (Note 1b)
A
0.9
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Value
52
Unit
R
(Note 1a)
(Note 1b)
°C/W
q
JA
R
145
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= −250 mA, V = 0 V
−30
V
DSS
D
GS
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= −250 mA,
−19
mV/°C
DSS
J
D
Referenced to 25°C
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
= −24 V, V = 0 V
−1
mA
mA
DSS
DS
GS
GS
I
V
=
25 V, V = 0 V
10
GSS
DS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V , I = −250 mA
−1.2
−2
−2.6
V
DS
D
DV
/ DT
Gate to Source Threshold Voltage
Temperature Coefficient
I = −250 mA,
D
Referenced to 25°C
5.9
mV/°C
GS(th)
J
r
Static Drain to Source On Resistance
V
GS
V
GS
V
GS
V
DD
= −10 V, I = −11 A
11
19
13.5
27
mW
DS(on)
D
= −4.5 V, I = −8 A
D
= −10 V, I = −11 A, T = 125°C
14.5
38
21
D
J
g
FS
Forward Transconductance
= −5 V, I = −11 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −15 V, V = 0 V, f = 1 MHz
1440
477
458
12
2160
720
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
690
rss
R
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
V
= −15 V, I = −11 A,
8.8
19
87
72
33
18
34
ns
ns
ns
ns
nC
d(on)
DD
GS
D
= −10 V, R
= 6 W
GEN
t
r
t
Turn−Off Delay Time
Fall Time
139
115
46
d(off)
t
f
Q
Total Gate Charge
V
GS
V
DD
= 0 V to −10 V,
g
= −15 V, I = −11 A
D
www.onsemi.com
2
NTLJS14D0P03P8Z
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
SWITCHING CHARACTERISTICS
Q
Total Gate Charge
V
GS
V
DD
= 0 V to −4.5 V,
20
28
nC
g
= −15 V, I = −11 A
D
Q
Q
Gate to Source Charge
V
DD
V
DD
= −15 V, I = −11 A
4.5
13
nC
nC
gs
D
Gate to Drain “Miller” Charge
= −15 V, I = −11 A
gd
D
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
−0.7
−0.9
31
−1.2
−1.4
50
V
V
V
V
= 0 V, I = −2 A (Note 2)
SD
GS
S
= 0 V, I = −11 A (Note 2)
GS
S
t
Reverse Recovery Time
I = -11 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
9
18
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is determined
q
q
JA
CA
by the user’s board design.
a. 52°C/W when mounted
b. 145°C/W when mounted
on a minimum pad of 2 oz copper.
2
on a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Pulse Id refers to Forward Bias Safe Operation Area.
ORDERING INFORMATION
Device
†
Package
Package Method
NTLJS14D0P03P8ZTAG
WDFN6 (PB−Free)
3000 Tape / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
3
NTLJS14D0P03P8Z
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
100
80
60
40
20
0
4
V
= −10 V
GS
V
= −6 V
V
= −3.5 V
GS
GS
3
2
1
0
V
GS
= −4.5 V
V
= −5.5 V
V
= −5.5 V
GS
GS
V
= −4.5 V
GS
V
GS
= −10 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
= −6 V
GS
V
= −3.5 V
GS
0
1
2
3
4
5
0
20
40
60
80
100
−I , Drain Current (A)
D
−V , Drain to Source Voltage (V)
DS
Figure 2. Normalized On−Resistance vs. Drain
Figure 1. On−Region Characteristics
Current and Gate Voltage
1.4
80
60
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
I
V
= −11 A
D
1.3
1.2
1.1
1.0
0.9
0.8
0.7
= −10 V
GS
I
D
= −11 A
40
20
0
T = 125°C
J
T = 25°C
J
2
4
6
8
10
−75 −50 −25
0
25
50
75 100 125 150
−V , Gate to Source Voltage (V)
GS
T , Junction Temperature (°C)
J
Figure 4. On−Resistance vs. Gate
Figure 3. Normalized On−Resistance
to Source Voltage
vs. Junction Temperature
100
80
60
40
20
0
100
10
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
= 0 V
GS
V
DS
= −5 V
T = 150°C
J
1
T = 150°C
J
T = 25°C
J
0.1
T = 25°C
J
T = −55°C
0.01
J
T = −55°C
J
0.001
0.4
0.6
0.8
1.0
1.2
1.4
0.0
0.2
1
2
3
4
5
6
−V , Body Diode Forward Voltage (V)
SD
−V , Gate to Source Voltage (A)
GS
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
Figure 5. Transfer Characteristics
www.onsemi.com
4
NTLJS14D0P03P8Z
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
10
8
10000
I
D
= −11 A
V
DD
= −10 V
C
iss
6
V
DD
= −15 V
1000
C
oss
4
V
DD
= −20 V
C
rss
2
0
f = 1 MHz
= 0 V
V
GS
100
40
0
10
20
30
30
0.1
1
10
−V , Drain to Source Voltage (V)
DS
Q , Gate Charge (nC)
g
Figure 8. Capacitance vs. Drain to Source
Voltage
Figure 7. Gate Charge Characteristics
300
100
1000
100
10
This Area Is
Limited by r
Single Pulse
DS(on)
R
= 145°C/W
q
JA
T = 25°C
A
10
1
100ms
1 ms
10 ms
100 ms
Single Pulse
T = Max Rated
1
0.1
1 s
J
10 s
DC
R
= 145°C/W
Curve Bent to
Measured Data
q
JA
T = 25°C
A
0.01
0.1
−4
−3
−2
−1
0.01
0.1
1
10
100 200
10
10
10
10
1
10
100 1000
t, Pulse Width (sec)
−V , Drain to Source Voltage (V)
DS
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Forward Bias Safe Operating Area
2
1
Duty Cycle−Descending Order
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
1
0.01
t
2
Notes:
(t) = r(t) x R
Single Pulse
Z
q
q
JA
JA
0.001
0.0001
R
= 145°C/W
q
JA
Peak T = P
x Z (t) + T
q
JA A
J
DM
Duty Cycle, D = t /t
1
2
−3
−2
−1
−4
10
10
10
1
10
100
1000
10
t, Rectangular Pulse Duration (sec)
Figure 11. Junction−to−Ambient Transient Thermal Response Curve
www.onsemi.com
5
NTLJS14D0P03P8Z
PACKAGE DIMENSIONS
WDFN6 2.05X2.05, 0.65P
CASE 483AV
ISSUE A
DATE 02 APR 2019
www.onsemi.com
6
NTLJS14D0P03P8Z
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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