NTHL019N60S5F [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® V, FRFET®, 600 V, 75 A, 19 mΩ, TO-247;
| 型号： | NTHL019N60S5F |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® V, FRFET®, 600 V, 75 A, 19 mΩ, TO-247 |
| 文件： | 总9页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, SUPERFET) V,
FRFET), TO247-3L
V
R
MAX
I MAX
D
DSS
DS(ON)
600 V
19 mW @ 10 V
75 A
D
600 V, 19 mW, 75 A
NTHL019N60S5F
Description
G
The SUPERFET V MOSFET FRFET series, optimized reverse
recovery performance of body diode, can remove additional component
and improve system reliability for soft switching applications such as
PSFB and LLC.
S
Features
• 650 V @ T = 150°C
J
• Typ. R
= 15.2 mW
• 100% Avalanche Tested
DS(on)
• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
G
D
Applications
S
• Telecom / Server Power Supplies
• EV Charger / UPS / Solar / Industrial Power Supplies
TO−247 Long Leads
CASE 340CX
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
J
MARKING DIAGRAM
Parameter
Drain−to−Source Voltage
Symbol
Value
600
30
Unit
V
V
DSS
V
GSS
Gate−to−Source Voltage
DC
V
AC (f > 1 Hz)
30
T019N
60S5F
AYWWZZ
Continuous Drain Current
T
C
= 25°C
= 100°C
= 25°C
= 25°C
= 25°C
I
75
A
D
T
C
70
Power Dissipation
T
C
T
C
T
C
P
568
393
393
W
A
D
Pulsed Drain Current (Note 1)
I
DM
Pulsed Source Current
(Body Diode) (Note 1)
I
A
SM
T019N60S5F = Specific Device Code
A
= Assembly Location
Operating Junction and Storage Temperature T , T
−55 to
+150
°C
YWW
ZZ
= Data Code (Year & Week)
= Assembly Lot
J
STG
Range
Source Current (Body Diode)
I
S
75
A
Single Pulse Avalanche
Energy
I = 12.4 A,
G
E
AS
1208
mJ
L
ORDERING INFORMATION
R
= 25 W
Avalanche Current
I
12.4
5.68
120
70
A
Device
NTHL019N60S5F
Package
Shipping
AS
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
mJ
TO−247
30 Units / Tube
AR
dv/dt
V/ns
Peak Diode Recovery dv/dt (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I ≤ 37.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
February, 2022 − Rev. 2
NTHL019N60S5F/D
NTHL019N60S5F
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.22
40
Unit
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Junction−to−Ambient, Max.
R
°C/W
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA, T = 25_C
600
−
−
−
V
(BR)DSS
GS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
= 10 mA, Referenced to 25_C
−
630
mV/_C
(BR)DSS
D
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0 V, V = 600 V, T = 25_C
−
−
−
−
10
mA
DSS
GSS
DS
J
I
V
=
30 V, V = 0 V
100
nA
GS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 37.5 A, T = 25_C
−
3.2
−
15.2
−
19
4.8
−
mW
V
DS(on)
GS
D
J
V
V
GS
= V , I = 15.7 mA, T = 25_C
GS(th)
DS
D
J
Forward Trans−conductance
g
FS
V
DS
= 20 V, I = 37.5 A
96
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 400 V, V = 0 V, f = 250 kHz
−
−
−
13400
203
−
−
−
pF
ISS
DS
GS
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I
= Constant, V = 0 V to 400 V,
3174
OSS(tr.)
D
DS
= 0 V
V
GS
Energy Related Output Capacitance
Total Gate Charge
C
V
= 0 V to 400 V, V = 0 V
−
−
−
−
−
343
252
75
−
−
−
−
−
OSS(er.)
DS
GS
Q
V
= 400 V, I = 37.5 A, V = 10 V
nC
G(tot)
DD
D
GS
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
GS
Q
71
GD
R
f = 1 MHz
3.5
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
V
= 0/10 V, V = 400 V,
−
−
−
−
73
45
204
4
−
−
−
−
ns
d(on)
GS
D
DD
I
= 37.5 A, R = 2.2 W
G
t
r
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
SOURCE-TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
GS
= 0 V, I = 37.5 A, T = 25_C
−
−
−
−
1.2
−
V
SD
RR
SD
J
t
V
= 0 V, I = 37.5 A,
204
1686
ns
nC
GS
SD
dI/dt = 100 A/ms, V = 400 V
DD
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTHL019N60S5F
TYPICAL CHARACTERISTICS
150
125
100
1000
V
GS
= 7.0 V
10 V
T
C
= 25°C
V
DS
= 20 V
6.0 V
100
75
50
25
0
5.5 V
10
1
5.0 V
4.5 V
T
= 150°C
T
= 25°C
T = −55°C
C
C
C
0
5
10
15
20
3
0
0
4
5
6
1.2
300
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.025
0.020
1000
100
10
V
GS
= 0 V
T
= 25°C
C
V
V
= 10 V
= 20 V
GS
T
C
= 25°C
0.015
0.010
GS
1
0.005
0
T
= 150°C
T = −55°C
C
C
0.1
0
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1.0
I , DRAIN CURRENT (A)
V
SD
, DIODE FORWARD VOLTAGE (V)
D
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
6
10
10
V
= 0 V
f = 250 kHz
C
C
C
= C + C (C = shorted)
GS GD DS
GS
ISS
I
= 37.5 A
= C + C
= C
D
5
OSS
RSS
DS
GD
10
V
DS
= 130 V
GD
C
8
6
4
ISS
V
DS
= 400 V
4
10
3
10
C
C
OSS
2
10
RSS
1
10
2
0
0
10
−1
10
0
100
200
300
400
500
600
50
100
150
200
250
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
NTHL019N60S5F
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
3.0
V
= 0 V
= 10 mA
GS
V
= 10 V
= 37.5 A
GS
I
D
I
D
2.5
2.0
1.5
1.0
0.9
0.8
0.5
0
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
80
70
60
50
40
30
20
1000
100
10
10 ms
100 ms
1 ms
Operation in this Area
10 ms
is Limited by R
DS(on)
1
DC
T
C
= 25°C
10
0
T = 150°C
J
Single Pulse
0.1
1
10
100
1000
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
50
40
30
20
10
0
0
100
200
300
400
500
600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain−to−Source Voltage
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4
NTHL019N60S5F
TYPICAL CHARACTERISTICS
1
D = 0.5
D = 0.2
0.1
D = 0.1
D = 0.05
D = 0.02
Notes:
(t) = 0.22°C/W Max
0.01
Z
q
JC
D = 0.01
Duty Cycle, D = t /t
1
2
T
JM
= P
x Z (t) + T
q
DM JC C
Single Pulse
0.00001
0.001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Impedance
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5
NTHL019N60S5F
V
GS
R
Q
g
L
V
DD
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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6
NTHL019N60S5F
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC or its subsidiaries in the United States and/or other
countries.
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7
NTHL019N60S5F
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
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8
NTHL019N60S5F
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