NTHL019N65S3H [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 75 A, 19.3 mΩ, TO-247;
| 型号： | NTHL019N65S3H |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 75 A, 19.3 mΩ, TO-247 |
| 文件： | 总10页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - N-Channel,
SUPERFET) III, FAST
650 V, 19.3 mW, 75 A
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
19.3 mW @ 10 V
75 A
D
NTHL019N65S3H
Description
SUPERFET III MOSFET is onsemi’s brand−new high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance
technology for outstanding low on- resistance and lower gate charge
performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
G
S
Consequently, SUPERFET III MOSFET FAST series helps
minimize various power systems and improve system efficiency.
Features
• 700 V @ T = 150°C
J
• Typ. R
= 15 mW
DS(on)
G
• Ultra Low Gate Charge (Typ. Q = 282 nC)
D
g
S
• Low Effective Output Capacitance (Typ. C
= 2495 pF)
oss(eff.)
TO−247 Long Leads
• 100% Avalanche Tested
CASE 340CX
• These Devices are Pb−Free and are RoHS Compliant
MARKING DIAGRAM
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• EV Charger
AYWWZZ
T019N
• UPS / Solar
65S3H
T019N65S3H
A
YWW
ZZ
= Specific Device Code
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2022 − Rev. 1
NTHL019N65S3H/D
NTHL019N65S3H
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
30
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
75
A
C
− Continuous (T = 100°C)
73
C
I
Drain Current
− Pulsed (Note 1)
328
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
1421
12.5
6.25
120
AS
AS
I
E
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
20
P
(T = 25°C)
625
W
W/°C
°C
D
C
− Derate Above 25°C
5.0
T , T
Operating and Storage Temperature Range
−55 to +150
260
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 12.5 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 37.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.20
40
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
30 Units
NTHL019N65S3H
T019N65S3H
TO−247
Tube
N/A
N/A
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2
NTHL019N65S3H
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150_C
GS
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= 10 mA, Referenced to 25_C
0.63
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
−
−
−
−
7.1
−
5
mA
DSS
GS
= 520 V, T = 125_C
−
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 14.3 mA
2.4
−
−
4.0
19.3
−
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 37.5 A
15
D
g
FS
= 20 V, I = 37.5 A
−
97.4
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 250 kHz
−
−
−
−
−
−
−
−
15993
188
2495
344
282
73
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
GS
oss(eff.)
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 37.5 A, V = 10 V
D GS
g(tot)
(Note 4)
Q
gs
Q
77
gd
ESR
f = 1 MHz
1.1
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
V
= 400 V, I = 37.5 A,
−
−
−
−
54
22
−
−
−
−
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R = 2.2 W
g
t
r
(Note 4)
t
182
4.0
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
75
328
1.2
A
A
V
S
I
SM
V
SD
Source to Drain Diode Forward
Voltage
V
GS
= 0 V, I = 37.5 A
SD
t
Reverse Recovery Time
V
= 400 V, I = 37.5 A,
−
−
540
−
−
ns
rr
DD
F
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
13.2
mC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NTHL019N65S3H
TYPICAL PERFORMANCE CHARACTERISTICS
300
250
200
150
100
50
1000
V
= 10.0 V
GS
V
GS
= 7.0 V
V
= 20 V
DS
250 ms Pulse Test
V
= 6.0 V
GS
100
10
1
250 ms Pulse Test
= 25°C
T
C
V
GS
= 5.0 V
150°C
25°C
−55°C
V
GS
V
GS
15
= 4.5 V
= 4.0 V
0
0
5
10
20
2
3
GS
4
5
6
V
, Drain−Source Voltage (V)
V
, Gate−Source Voltage (V)
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.05
0.04
0.03
0.02
0.01
0
1000
100
10
V
= 0 V
T
C
= 25°C
GS
250 ms Pulse Test
150°C
25°C
V
= 10 V
GS
V
GS
= 20 V
1
−55°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
50
100
150
200
250
300
V
, Body Diode Forward Voltage (V)
I , Drain Current (A)
D
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
10
1000000
100000
10000
1000
100
C
C
C
= C + C (C = shorted)
gs gd ds
I
D
= 37.5 A
iss
= C + C
oss
rss
ds
gd
= C
gd
8
6
4
2
0
V
DS
= 130 V
C
iss
V
DS
= 400 V
C
oss
C
rss
10
1
V
GS
= 0 V
f = 250 kHz
0.1
0
50
100
150
200
250
300
0
100
200
300
400 500 600
Q , Total Gate Charge (nC)
V
DS
, Drain−Source Voltage (V)
g
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
NTHL019N65S3H
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1.2
1.1
1.0
0.9
0.8
2.5
V
I
= 0 V
= 10 mA
V
I
= 10 V
= 37.5 A
GS
GS
D
D
2.0
1.5
1.0
0.5
0.0
−75 −50 −25 0 25 50 75 100 125 150 175
−75 −50 −25 0 25 50 75 100 125 150 175
T , Junction Temperature (5C)
J
T , Junction Temperature (5C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
80
1000
70
60
50
40
30
20
10 ms
100
10
1
100 ms
1 ms
10 ms
DC
Operation in this Area
is Limited by R
DS(on)
T
C
= 25°C
T = 150°C
Single Pulse
J
10
0
0.1
150
25
50
75
100
125
1
10
100
1000
T , Case Temperature (5C)
V
DS
, Drain−Source Voltage (V)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
60
50
40
30
20
10
0
0
100
200
300
400
500
600
V
DS
, Drain to Source Voltage (V)
Figure 11. EOSS vs. Drain to Source Voltage
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5
NTHL019N65S3H
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
D = 0.2
P
DM
D = 0.1
0.1
D = 0.05
t
1
t
2
D = 0.02
D = 0.01
Z
R
(t) = r(t) x R
q
JC
q
JC
= 0.20°C/W
q
JC
Peak T = P
x Z (t) + T
q
JC C
J
DM
Duty Cycle, D = t / t
SINGLE PULSE
1
2
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t, Rectangular Pulse Duration (sec)
Figure 12. Transient Thermal Response Curve
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6
NTHL019N65S3H
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
NTHL019N65S3H
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC. FRFET is a registered trademark of Semiconductor Components
Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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