NTH4L020N120SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L;型号: | NTH4L020N120SC1 |
厂家: | ONSEMI |
描述: | Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L |
文件: | 总8页 (文件大小:357K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
20ꢀmohm, 1200ꢀV, M1,
TO-247-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
28 mꢀ @ 20 V
102 A
D
NTH4L020N120SC1
G
Features
• Typ. R
• Ultra Low Gate Charge (Q
S1: Kelvin Source
S2: Power Source
= 20 mꢀ
DS(on)
S1 S2
= 220 nC)
G(tot)
N−CHANNEL MOSFET
• High Speed Switching with Low Capacitance (C = 258 pF)
oss
• 100% Avalanche Tested
• T = 175°C
J
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
D
Typical Applications
• UPS
• DC-DC Converter
• Boost Inverter
S2
S1
G
TO−247−4LD
CASE 340CJ
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
V
DSS
1200
−15/+25
−5/+20
V
V
V
Gate−to−Source Voltage
V
GS
AYWWZZ
NTH4L020
N120SC1
Recommended Operation Values
of Gate−to−Source Voltage
T
< 175°C
= 25°C
V
GSop
C
Continuous Drain
Current (Note 2)
Steady
State
T
I
D
102
510
84
A
W
A
C
Power Dissipation
(Note 2)
P
D
A
Y
= Assembly Location
= Year
Continuous Drain
Current (Notes 1, 2)
Steady
State
T
C
= 100°C
I
D
WW = Work Week
ZZ = Lot Traceability
NTH4L020N120SC1 = Specific Device Code
Power Dissipation
(Notes 1, 2)
P
255
408
W
A
D
Pulsed Drain Current
(Note 3)
T = 25°C
A
I
DM
ORDERING INFORMATION
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Device
Package
Shipping
Source Current (Body Diode)
I
46
A
S
NTH4L020N120SC1 TO−247−4LD
30 Units /
Tube
Single Pulse Drain−to−Source Avalanche
E
AS
264
mJ
Energy (I
= 23 A, L = 1 mH) (Note 4)
L(pk)
Maximum Lead Temperature for Soldering
(1/8″ from case for 5 s)
T
L
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. JA is constant value to follow guide table of LV/HV discrete final datasheet
generation.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. Repetitive rating, limited by max junction temperature.
4. EAS of 264 mJ is based on starting T = 25°C; L = 1 mH, I = 23 A,
J
AS
V
DD
= 120 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2023 − Rev. 5
NTH4L020N120SC1/D
NTH4L020N120SC1
Table 1. THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Notes 1, 2)
Symbol
Max
0.3
40
Unit
°C/W
R
ꢁ
JC
R
ꢁ
JA
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = 1 mA, referenced to 25°C
D
−
0.5
V/°C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25°C
−
−
−
−
−
−
100
1
ꢂ A
mA
ꢂ A
DSS
GS
DS
J
= 1200 V
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
V
= +25/−15 V, V = 0 V
1
GSS
GS
DS
V
R
= V , I = 20 mA
1.8
−5
−
2.7
−
4.3
+20
28
50
−
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
GS
V
GS
V
DS
= 20 V, I = 60 A, T = 25°C
20
37
3.6
mꢀ
DS(on)
D
J
= 20 V, I = 60 A, T = 175°C
−
D
J
Forward Transconductance
g
FS
= 20 V, I = 60 A
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
−
2943
258
24
−
−
−
−
−
−
−
−
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
D
= −5/20 V, V = 600 V,
220
33
G(TOT)
GS
DS
I
= 80 A
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
G(TH)
Q
66
GS
GD
Q
63
R
f = 1 MHz
1.6
ꢀ
G
SWITCHING CHARACTERISTICS, VGS = 10 V
Turn−On Delay Time
t
V
D
= −5/20 V, V = 800 V,
−
−
−
−
−
−
−
21.6
21
35
34
66
20
−
ns
d(ON)
GS
DS
I
= 80 A, R = 2 ꢀ
G
Rise Time
t
r
Inductive load
Turn−Off Delay Time
t
41
d(OFF)
Fall Time
t
f
10
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
494
397
891
ꢂ
J
E
−
OFF
E
tot
−
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
I
V
GS
= −5 V, T = 25°C
−
−
−
−
46
A
SD
J
Current
Pulsed Drain−Source Diode Forward
Current (Note 3)
I
408
SDM
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
V
= −5 V, I = 30 A, T = 25°C
−
−
−
3.7
30
−
−
−
V
SD
GS
SD
J
t
= −5/20 V, I = 80 A,
ns
nC
RR
GS
S
SD
dI /dt = 1000 A/ꢂ s
Q
225
RR
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2
NTH4L020N120SC1
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Symbol
Test Condition
Min
Typ
Max
Unit
E
REC
V
= −5/20 V, I = 80 A,
−
−
−
−
16
15
16
15
−
−
−
−
ꢂ J
A
GS
S
SD
dI /dt = 1000 A/ꢂ s
I
RRM
Ta
ns
ns
Discharge Time
Tb
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NTH4L020N120SC1
TYPICAL CHARACTERISTICS
250
200
150
100
2.5
V
GS
= 20 V
V
GS
= 16 V
17 V
18 V
16 V
2.0
19 V
19 V
18 V
1.5
17 V
20 V
1.0
0.5
50
0
0
2
4
6
8
10
0
5
1
50
100
150
200
250
V
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
160
120
80
1.9
1.7
1.5
1.3
1.1
I
D
= 60 A
I
V
= 60 A
= 20 V
D
GS
T = 150°C
J
40
0
0.9
0.7
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
10
15
20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
120
100
80
300
V
= −5 V
V
= 20 V
GS
DS
T = 25°C
J
60
30
40
T = 25°C
J
T = 175°C
20
0
J
T = 175°C
J
T = −55°C
J
T = −55°C
J
3
2
4
6
8
10
12
14
16
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NTH4L020N120SC1
TYPICAL CHARACTERISTICS (CONTINUED)
100K
20
V
DD
= 400 V
I
D
= 80 A
10K
1K
V
= 800 V
15
10
5
DD
C
iss
V
= 600 V
DD
C
oss
100
C
rss
0
10
1
f = 1 MHz
= 0 V
V
GS
−5
0
50
100
150
200
250
0.1
1
10
100
800
175
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
100
120
100
80
T = 25°C
J
V
= 20 V
GS
10
60
T = 150°C
J
40
20
0
R
= 0.30°C/W
ꢁ
JC
1
0.001
0.01
0.1
1
10
25
50
75
100
125
150
t
AV
, TIME IN AVALANCHE (ms)
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
1000
100
10
100K
10K
Single Pulse
R
T
= 0.30°C/W
ꢁ
JC
= 25°C
C
10 ꢂ s
100 ꢂ s
1 ms
1
10 ms
100 ms
1K
Single Pulse
T = Max Rated
0.1
J
R
= 0.3°C/W
= 25°C
ꢁ
JC
T
C
0.01
100
0.1
1
10
100
1K
5K
0.00001 0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NTH4L020N120SC1
TYPICAL CHARACTERISTICS (CONTINUED)
2
1
50% Duty Cycle
20%
10%
5%
0.1
2%
Notes:
(t) = r(t) x R
1%
P
DM
Z
ꢁ
ꢁ
JC
JC
0.01
Single Pulse
R
= 0.30°C/W
ꢁ
JC
t
Peak T = P
x Z
(t) + T
JC C
1
ꢁ
J
DM
Duty Cycle, D = t /t
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Ambient Thermal Response
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
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