NTH4L030N120M3S [ONSEMI]
Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-4L;
| 型号： | NTH4L030N120M3S |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-4L |
| 文件： | 总8页 (文件大小：356K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
29 mohm, 1200ꢀV, M3S,
TO-247-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
39 mW @ 18 V
73 A
D
NTH4L030N120M3S
Features
G
S1: Driver Source
S2: Power Source
• Typ. R
= 29 mW @ V = 18 V
GS
DS(on)
S1
S2
• Ultra Low Gate Charge (Q
= 107 nC)
G(tot)
N−CHANNEL MOSFET
• High Speed Switching with Low Capacitance (C = 106 pF)
oss
• 100% Avalanche Tested
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Solar Inverters
D
S2
• Electric Vehicle Charging Stations
• UPS (Uninterruptible Power Supplies)
• Energy Storage Systems
S1
G
TO−247−4L
CASE 340CJ
• SMPS (Switch Mode Power Supplies)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
MARKING DIAGRAM
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
Unit
V
DSS
1200
−10/+22
−3/+18
V
V
V
V
GS
H4L030
120M3S
AYWWZZ
Recommended Operation Values T <175°C
of Gate−to−Source Voltage
V
GSop
C
Continuous Drain
Current (Notes 1, 3)
Steady
State
T =25°C
C
I
D
73
313
52
A
W
A
Power Dissipation
(Note 1)
P
D
H4L030120M3S = Specific Device Code
Continuous Drain
Current (Notes 1, 3)
Steady T =100°C
State
I
D
C
A
Y
= Assembly Location
= Year
WW = Work Week
Power Dissipation
(Note 1)
P
D
156
193
W
A
ZZ
= Lot Traceability
Pulsed Drain Current
(Note 2)
T
C
= 25°C
I
DM
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
A
J
stg
ORDERING INFORMATION
+175
Device
Package
Shipping
Source Current (Body Diode)
I
S
62
T
C
= 25°C, V = −3 V
GS
NTH4L030N120M3S TO−247−4L
30 Units /
Tube
Single Pulse Drain−to−Source Avalanche
Energy (Note 4)
E
AS
220
270
mJ
°C
Maximum Lead Temperature for Soldering
(1/25″ from case for 10 s)
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. The maximum current rating is based on typical R
performance.
AS
DS(on)
4. EAS of 220 mJ is based on starting T = 25°C; L = 1 mH, I = 21 A,
J
V
= 100 V, V = 18 V.
GS
DD
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
March, 2023 − Rev. 0
NTH4L030N120M3S/D
NTH4L030N120M3S
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.48
40
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
q
JC
R
q
JA
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF−STATE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = 1 mA, referenced to 25°C
D
−
0.3
V/°C
(BR)DSS
J
(Note 6)
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
−
−
−
−
100
1
mA
mA
DSS
GS
J
V
= 1200 V
Gate−to−Source Leakage Current
ON−STATE CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
= +22/−10 V, V = 0 V
GSS
GS DS
V
R
V
= V , I = 15 mA
2.04
−3
−
2.4
−
4.4
+18
39
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
V
GOP
Drain−to−Source On Resistance
V
= 18 V, I = 30 A, T = 25°C
29
58
mW
DS(on)
GS
D
J
V
= 18 V, I = 30 A, T = 175°C
−
−
GS
D
J
(Note 6)
Forward Transconductance
g
FS
V
DS
= 10 V, I = 30 A (Note 6)
−
30
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
−
2430
106
9.4
107
6
−
−
−
−
−
−
−
−
pF
ISS
GS
DS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
RSS
C
Q
V
= −3/18 V, V = 800 V,
nC
G(TOT)
GS
DS
I
= 30 A
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
G(TH)
Q
17
GS
GD
Q
28
R
f = 1 MHz
3.3
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
V
= −3/18 V, V = 800 V,
−
−
−
−
−
−
−
13
19
−
−
−
−
−
−
−
ns
d(ON)
GS
DS
I
= 30 A, R = 4.7 W
D
G
t
r
Inductive load (Notes 5, 6)
Turn−Off Delay Time
Fall Time
t
48
d(OFF)
t
f
11
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
324
134
458
mJ
E
OFF
E
tot
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
I
V
= −3 V, T = 25°C (Note 6)
−
−
−
−
−
62
193
−
A
V
SD
GS
C
Current
Pulsed Source−Drain Diode Forward
Current (Note 2)
I
SDM
Forward Diode Voltage
V
V
GS
= −3 V, I = 30 A, T = 25°C
4.6
SD
SD
J
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2
NTH4L030N120M3S
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
t
V
S
= −3/18 V, I = 30 A,
−
−
−
−
−
−
20
114
10.5
11
−
−
−
−
−
−
ns
nC
mJ
A
RR
GS
SD
dI /dt = 1000 A/ms, V = 800 V
DS
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
(Note 6)
E
REC
RRM
I
T
11
ns
ns
A
Discharge Time
T
8.5
B
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. E /E
result is with body diode.
ON OFF
6. Defined by design, not subject to production test.
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3
NTH4L030N120M3S
TYPICAL CHARACTERISTICS
200
160
120
80
2.0
12 V
V
GS
= 20 V to 15 V
V
GS
= 15 V to 20 V
1.5
12 V
1.0
0.5
40
0
0
2
4
6
8
10
0
20
40
I , DRAIN CURRENT (A)
60
80
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.5
2.0
1.5
1.0
400
350
300
250
I
D
= 30 A
I
V
= 30 A
D
= 18 V
GS
200
150
100
T = 150°C
J
0.5
0
50
0
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175 200
4
8
12
16
20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
100
80
500
400
300
200
R
= 4.7 W
= 800 V
= 18/−3 V
= 25°C
Etot
Eon
G
V
DS
= 10 V
V
DD
V
GS
T
C
60
T = 175°C
J
40
T = 25°C
J
Eoff
100
0
20
0
T = −55°C
J
0
3
6
9
12
15
18
10
15
20
I , DRAIN CURRENT (A)
25
30
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
D
Figure 5. Transfer Characteristics
Figure 6. Switching Loss vs. Drain Current
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4
NTH4L030N120M3S
TYPICAL CHARACTERISTICS
500
400
300
200
400
V
= 800 V
= 15 A
= 18/−3 V
R
= 4.7 W
= 30 A
= 18/−3 V
= 25°C
DD
G
Etot
Eon
Etot
Eon
I
D
I
D
V
GS
V
GS
300
200
T = 25°C
C
T
C
Eoff
100
0
Eoff
100
0
600
650
700
750
800
0
2
4
6
8
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R , GATE RESISTANCE (W)
G
Figure 7. Switching Loss vs. Drain−to−Source
Figure 8. Switching Loss vs. Gate Resistance
Voltage
400
300
200
300
100
V
GS
= −3 V
Etot
Eon
R
= 4.7 W
= 15 A
= 800 V
= 18/−3 V
T = 175°C
J
G
I
D
10
1
V
DD
V
GS
T = 25°C
J
100
0
Eoff
T = −55°C
J
25
50
75
100
125
150
175
0
2
4
6
8
10
TEMPERATURE (°C)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Switching Loss vs. Temperature
Figure 10. Reverse Drain Current vs. Body
Diode Forward Voltage
18
15
12
10K
1K
V
DD
= 400 V
I
D
= 30 A
C
ISS
V
DD
= 800 V
C
C
OSS
RSS
9
6
V
= 600 V
DD
100
3
10
1
f = 1 MHz
= 0 V
0
V
GS
−3
0
10 20 30 40 50 60 70 80 90 100 110 120
Q , GATE CHARGE (nC)
0.1
1
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
100
800
V
G
Figure 11. Gate−to−Source Voltage vs. Total
Figure 12. Capacitance vs. Drain−to−Source
Charge
Voltage
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5
NTH4L030N120M3S
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
100
25°C
V
GS
= 18 V
150°C
10
R
= 0.48°C/W
10
0
q
JC
1
0.0001
0.001
0.01
0.1
1
10
25
50
75
100
125
150
175
T , AVALANCHE TIME (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 13. Unclamped Inductive Switching
Capability
Figure 14. Maximum Continuous Drain
Current vs. Case Temperature
20K
10K
1000
100
10
R
= 0.48°C/W
q
JC
R
= 0.48°C/W
q
JC
T = Max Rated
J
Single Pulse
Single Pulse
T
C
= 25°C
T
C
= 25°C
10 ms
100 ms
1 ms
1K
1
10 ms
R
Limit
DS(on)
0.1
100 ms/DC
Thermal Limit
Package Limit
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
1000
t, PULSE WIDTH (sec)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 15. Safe Operating Area
Figure 16. Single Pulse Maximum Power
Dissipation
2
1
50% Duty Cycle
20%
10%
0.1
5%
2%
1%
P
DM
Notes:
= 0.48°C/W
0.01
Single Pulse
0.00001
R
q
JC
Peak T = P
x Z (t) + T
q
JC C
t
1
J
DM
Duty Cycle, D = t / t
1
2
t
2
0.001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION
Figure 17. Junction−to−Case Transient Thermal Response
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
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