NTD6414AN [ONSEMI]

N-Channel Power MOSFET 100 V, 32 A, 37 mΩ; N沟道功率MOSFET的100 V, 32 A, 37毫欧
NTD6414AN
型号: NTD6414AN
厂家: ONSEMI    ONSEMI
描述:

N-Channel Power MOSFET 100 V, 32 A, 37 mΩ
N沟道功率MOSFET的100 V, 32 A, 37毫欧

文件: 总7页 (文件大小:134K)
中文:  中文翻译
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NTD6414AN  
N-Channel Power MOSFET  
100 V, 32 A, 37 mW  
Features  
Low R  
DS(on)  
High Current Capability  
100% Avalanche Tested  
http://onsemi.com  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
I
D
MAX  
Compliant  
V
R
MAX  
DS(on)  
(Note 1)  
(BR)DSS  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
100 V  
37 mW @ 10 V  
32 A  
Parameter  
DraintoSource Voltage  
GatetoSource Voltage Continuous  
Symbol  
Value  
100  
$20  
32  
Unit  
V
V
DSS  
NChannel  
V
GS  
V
D
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
= 100°C  
= 25°C  
I
D
A
C
q
JC  
T
C
22  
Power Dissipation  
R
Steady  
State  
T
C
P
D
100  
W
q
JC  
G
Pulsed Drain Current  
t = 10 ms  
p
I
117  
A
DM  
S
Operating and Storage Temperature Range  
T , T  
55 to  
+175  
°C  
J
stg  
Source Current (Body Diode)  
I
S
32  
A
4
Single Pulse DraintoSource Avalanche  
E
AS  
154  
mJ  
4
Energy (V = 50 Vdc, V = 10 Vdc,  
DD  
GS  
I
= 32 A, L = 0.3 mH, R = 25 W)  
L(pk)  
G
1
2
1
Lead Temperature for Soldering  
Purposes, 1/8from Case for 10 Seconds  
T
L
260  
°C  
2
3
3
DPAK  
IPAK  
CASE 369AA  
STYLE 2  
CASE 369D  
STYLE 2  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Max  
1.5  
37  
Unit  
JunctiontoCase (Drain) Steady State  
JunctiontoAmbient (Note 1)  
R
°C/W  
q
JC  
MARKING DIAGRAM  
& PIN ASSIGNMENTS  
R
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1 sq in pad size,  
4 Drain  
4 Drain  
(Cu Area 1.127 sq in [1 oz] including traces).  
1
Gate  
3
2
Source  
1
3
Drain  
Gate  
Source  
2
Drain  
6414AN = Device Code  
Y
= Year  
WW  
G
= Work Week  
= PbFree Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
November, 2009 Rev. 0  
NTD6414AN/D  
 
NTD6414AN  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
DraintoSource Breakdown Voltage  
V
V
GS  
= 0 V, I = 250 mA  
100  
V
(BR)DSS  
D
DraintoSource Breakdown Voltage  
Temperature Coefficient  
V
/T  
J
107  
mV/°C  
(BR)DSS  
Zero Gate Voltage Drain Current  
I
mA  
T = 25°C  
1.0  
100  
DSS  
J
V
DS  
= 0 V,  
GS  
V
= 100 V  
T = 125°C  
J
GatetoSource Leakage Current  
I
V
DS  
= 0 V, V = "20 V  
"100  
nA  
GSS  
GS  
ON CHARACTERISTICS (Note 3)  
Gate Threshold Voltage  
V
V
= V , I = 250 mA  
2.0  
4.0  
37  
V
GS(TH)  
GS  
DS  
D
Negative Threshold Temperature  
Coefficient  
V
/T  
8.3  
mV/°C  
GS(TH)  
J
DraintoSource OnResistance  
R
V
= 10 V, I = 32 A  
30  
18  
mW  
DS(on)  
GS  
D
Forward Transconductance  
gFS  
V
= 5.0 V, I = 10 A  
S
GS  
D
CHARGES, CAPACITANCES AND GATE RESISTANCE  
pF  
nC  
Input Capacitance  
C
1450  
230  
95  
ISS  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
C
OSS  
C
RSS  
V
GS  
= 0 V, f = 1.0 MHz, V = 25 V  
DS  
Q
40  
G(TOT)  
Threshold Gate Charge  
GatetoSource Charge  
GatetoDrain Charge  
Plateau Voltage  
Q
1.7  
8.0  
20  
G(TH)  
Q
V
GS  
= 10 V, V = 80 V, I = 32 A  
GS  
GD  
GP  
DS  
D
Q
V
5.9  
1.9  
V
Gate Resistance  
R
W
G
SWITCHING CHARACTERISTICS (Note 4)  
TurnOn Delay Time  
ns  
t
11  
52  
38  
48  
d(on)  
Rise Time  
t
r
V
= 10 V, V = 80 V,  
DD  
GS  
D
I
= 32 A, R = 6.1 W  
G
TurnOff Delay Time  
Fall Time  
t
d(off)  
t
f
DRAINSOURCE DIODE CHARACTERISTICS  
Forward Diode Voltage  
V
V
T = 25°C  
0.87  
0.76  
68  
1.2  
SD  
RR  
J
V
= 0 V, I = 32 A  
S
GS  
T = 125°C  
J
ns  
Reverse Recovery Time  
Charge Time  
t
T
51  
a
V
= 0 V, dI /dt = 100 A/ms,  
S
GS  
I
= 32 A  
S
Discharge Time  
T
16  
b
Reverse Recovery Charge  
Q
195  
nC  
RR  
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).  
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.  
4. Switching characteristics are independent of operating junction temperatures.  
http://onsemi.com  
2
 
NTD6414AN  
TYPICAL CHARACTERISTICS  
70  
70  
60  
50  
40  
30  
20  
10  
0
10 V  
7.5 V  
T = 25°C  
V
DS  
w 10 V  
J
6.5 V  
6.0 V  
60  
50  
40  
30  
20  
10  
0
5.5 V  
T = 25°C  
J
T = 125°C  
J
5.0 V  
4.5 V  
T = 55°C  
J
0
1
2
3
4
5
2
3
4
5
6
7
8
V
GS  
, GATETOSOURCE VOLTAGE (V)  
V
DS  
, DRAINTOSOURCE VOLTAGE (V)  
Figure 2. Transfer Characteristics  
Figure 1. OnRegion Characteristics  
0.07  
0.06  
0.05  
0.04  
0.03  
0.02  
0.10  
0.08  
0.06  
0.04  
I
= 32 A  
V
GS  
= 10 V  
D
T = 25°C  
J
T = 175°C  
J
T = 125°C  
J
T = 25°C  
J
0.02  
0.00  
T = 55°C  
J
5
6
7
8
9
10  
10  
15  
20  
25  
30  
35  
V
GS  
, GATETOSOURCE VOLTAGE (V)  
I , DRAIN CURRENT (A)  
D
Figure 3. OnRegion versus Gate Voltage  
Figure 4. OnResistance versus Drain Current  
and Gate Voltage  
3
2.5  
2
10000  
1000  
100  
V
GS  
= 0 V  
I
= 32 A  
= 10 V  
D
V
GS  
T = 150°C  
J
1.5  
1
T = 125°C  
J
0.5  
50 25  
10  
0
25  
50  
75  
100 125 150 175  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
T , JUNCTION TEMPERATURE (°C)  
J
V
DS  
, DRAINTOSOURCE VOLTAGE (V)  
Figure 5. OnResistance Variation with  
Figure 6. DraintoSource Leakage Current  
Temperature  
versus Voltage  
http://onsemi.com  
3
NTD6414AN  
TYPICAL CHARACTERISTICS  
10  
2800  
2400  
2000  
1600  
1200  
800  
100  
80  
60  
40  
20  
0
Q
T = 25°C  
T
J
V
GS  
= 0 V  
8
6
4
2
0
V
V
DS  
GS  
Q
Q
gd  
gs  
C
iss  
400  
I
= 32 A  
D
C
oss  
T = 25°C  
J
C
rss  
0
0
20  
40  
60  
80  
100  
0
5
10  
15  
20  
25  
30  
35  
40  
V
DS  
, DRAINTOSOURCE VOLTAGE (V)  
Q , TOTAL GATE CHARGE (nC)  
g
Figure 7. Capacitance Variation  
Figure 8. GatetoSource Voltage and  
DraintoSource Voltage versus Total Charge  
1000  
100  
10  
35  
V
I
= 80 V  
= 32 A  
= 10 V  
DS  
T = 25°C  
J
30  
25  
20  
15  
10  
5
D
V
GS  
= 0 V  
V
GS  
t
r
t
f
t
d(off)  
t
d(on)  
1
0
1
10  
R , GATE RESISTANCE (W)  
100  
0.4  
0.5  
, SOURCETODRAIN VOLTAGE (V)  
SD  
0.6  
0.7  
0.8  
0.9  
V
G
Figure 9. Resistive Switching Time Variation  
versus Gate Resistance  
Figure 10. Diode Forward Voltage versus  
Current  
100  
10  
1
160  
140  
120  
100  
80  
I
D
= 32 A  
10 ms  
100 ms  
1 ms  
10 ms  
V
= 10 V  
GS  
60  
SINGLE PULSE  
= 25°C  
dc  
T
C
40  
R
LIMIT  
DS(on)  
20  
THERMAL LIMIT  
PACKAGE LIMIT  
0
25  
0.1  
1
10  
100  
1000  
50  
75  
100  
125  
150  
175  
V
DS  
, DRAINTOSOURCE VOLTAGE (V)  
T , STARTING JUNCTION TEMPERATURE  
J
Figure 11. Maximum Rated Forward Biased  
Safe Operating Area  
Figure 12. Maximum Avalanche Energy versus  
Starting Junction Temperature  
http://onsemi.com  
4
NTD6414AN  
TYPICAL CHARACTERISTICS  
10  
1
D = 0.5  
0.2  
0.1  
0.05  
0.02  
0.1  
0.01  
0.01  
0.001  
SINGLE PULSE  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t, PULSE TIME (s)  
Figure 13. Thermal Response  
ORDERING INFORMATION  
Device  
Package  
Shipping†  
NTD6414ANT4G  
DPAK  
(PbFree)  
2500 / Tape & Reel  
NTD6414AN1G  
IPAK  
(PbFree)  
75 Units / Rail  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specification Brochure, BRD8011/D.  
http://onsemi.com  
5
NTD6414AN  
PACKAGE DIMENSIONS  
DPAK  
CASE 369AA01  
ISSUE A  
NOTES:  
1. DIMENSIONING AND TOLERANCING  
PER ANSI Y14.5M, 1982.  
SEATING  
PLANE  
T−  
2. CONTROLLING DIMENSION: INCH.  
C
B
R
INCHES  
DIM MIN MAX  
MILLIMETERS  
E
V
MIN  
5.97  
6.35  
2.19  
0.63  
0.46  
0.77  
MAX  
6.22  
6.73  
2.38  
0.89  
0.61  
1.14  
A
B
C
D
E
F
0.235 0.245  
0.250 0.265  
0.086 0.094  
0.025 0.035  
0.018 0.024  
0.030 0.045  
0.386 0.410  
0.018 0.023  
0.090 BSC  
4
2
Z
A
H
S
1
3
H
J
L
9.80 10.40  
U
0.46  
0.58  
2.29 BSC  
R
S
U
V
Z
0.180 0.215  
0.024 0.040  
4.57  
0.60  
0.51  
0.89  
3.93  
5.45  
1.01  
−−−  
1.27  
−−−  
F
J
0.020  
0.035 0.050  
0.155 −−−  
−−−  
L
D 2 PL  
STYLE 2:  
PIN 1. GATE  
2. DRAIN  
M
0.13 (0.005)  
T
3. SOURCE  
4. DRAIN  
SOLDERING FOOTPRINT*  
6.20  
3.0  
0.244  
0.118  
2.58  
0.101  
5.80  
0.228  
1.6  
0.063  
6.172  
0.243  
mm  
inches  
ǒ
Ǔ
SCALE 3:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
6
NTD6414AN  
PACKAGE DIMENSIONS  
DPAK  
CASE 369D01  
ISSUE B  
C
B
R
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
V
S
E
2. CONTROLLING DIMENSION: INCH.  
INCHES  
DIM MIN MAX  
MILLIMETERS  
4
2
MIN  
5.97  
6.35  
2.19  
0.69  
0.46  
0.94  
MAX  
6.35  
6.73  
2.38  
0.88  
0.58  
1.14  
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245  
0.250 0.265  
0.086 0.094  
0.027 0.035  
0.018 0.023  
0.037 0.045  
0.090 BSC  
0.034 0.040  
0.018 0.023  
0.350 0.380  
0.180 0.215  
0.025 0.040  
0.035 0.050  
A
K
1
3
T−  
SEATING  
PLANE  
2.29 BSC  
0.87  
0.46  
8.89  
4.45  
0.63  
0.89  
3.93  
1.01  
0.58  
9.65  
5.45  
1.01  
1.27  
−−−  
J
F
H
0.155  
−−−  
D 3 PL  
STYLE 2:  
PIN 1. GATE  
G
M
T
0.13 (0.005)  
2. DRAIN  
3. SOURCE  
4. DRAIN  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
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NTD6414AN/D  

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