NTD6414AN [ONSEMI]
N-Channel Power MOSFET 100 V, 32 A, 37 mΩ; N沟道功率MOSFET的100 V， 32 A， 37毫欧
| 型号： | NTD6414AN |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET 100 V, 32 A, 37 mΩ |
| 文件： | 总7页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD6414AN
N-Channel Power MOSFET
100 V, 32 A, 37 mW
Features
• Low R
DS(on)
• High Current Capability
• 100% Avalanche Tested
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• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
I
D
MAX
Compliant
V
R
MAX
DS(on)
(Note 1)
(BR)DSS
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
100 V
37 mW @ 10 V
32 A
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Symbol
Value
100
$20
32
Unit
V
V
DSS
N−Channel
V
GS
V
D
Continuous Drain
Current R
Steady
State
T
= 25°C
= 100°C
= 25°C
I
D
A
C
q
JC
T
C
22
Power Dissipation
R
Steady
State
T
C
P
D
100
W
q
JC
G
Pulsed Drain Current
t = 10 ms
p
I
117
A
DM
S
Operating and Storage Temperature Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
32
A
4
Single Pulse Drain−to−Source Avalanche
E
AS
154
mJ
4
Energy (V = 50 Vdc, V = 10 Vdc,
DD
GS
I
= 32 A, L = 0.3 mH, R = 25 W)
L(pk)
G
1
2
1
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
T
L
260
°C
2
3
3
DPAK
IPAK
CASE 369AA
STYLE 2
CASE 369D
STYLE 2
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
1.5
37
Unit
Junction−to−Case (Drain) Steady State
Junction−to−Ambient (Note 1)
R
°C/W
q
JC
MARKING DIAGRAM
& PIN ASSIGNMENTS
R
q
JA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
4 Drain
4 Drain
(Cu Area 1.127 sq in [1 oz] including traces).
1
Gate
3
2
Source
1
3
Drain
Gate
Source
2
Drain
6414AN = Device Code
Y
= Year
WW
G
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
November, 2009 − Rev. 0
NTD6414AN/D
NTD6414AN
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
107
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
mA
T = 25°C
1.0
100
DSS
J
V
DS
= 0 V,
GS
V
= 100 V
T = 125°C
J
Gate−to−Source Leakage Current
I
V
DS
= 0 V, V = "20 V
"100
nA
GSS
GS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
V
= V , I = 250 mA
2.0
4.0
37
V
GS(TH)
GS
DS
D
Negative Threshold Temperature
Coefficient
V
/T
8.3
mV/°C
GS(TH)
J
Drain−to−Source On−Resistance
R
V
= 10 V, I = 32 A
30
18
mW
DS(on)
GS
D
Forward Transconductance
gFS
V
= 5.0 V, I = 10 A
S
GS
D
CHARGES, CAPACITANCES AND GATE RESISTANCE
pF
nC
Input Capacitance
C
1450
230
95
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
V
GS
= 0 V, f = 1.0 MHz, V = 25 V
DS
Q
40
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
1.7
8.0
20
G(TH)
Q
V
GS
= 10 V, V = 80 V, I = 32 A
GS
GD
GP
DS
D
Q
V
5.9
1.9
V
Gate Resistance
R
W
G
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
ns
t
11
52
38
48
d(on)
Rise Time
t
r
V
= 10 V, V = 80 V,
DD
GS
D
I
= 32 A, R = 6.1 W
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
T = 25°C
0.87
0.76
68
1.2
SD
RR
J
V
= 0 V, I = 32 A
S
GS
T = 125°C
J
ns
Reverse Recovery Time
Charge Time
t
T
51
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
= 32 A
S
Discharge Time
T
16
b
Reverse Recovery Charge
Q
195
nC
RR
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD6414AN
TYPICAL CHARACTERISTICS
70
70
60
50
40
30
20
10
0
10 V
7.5 V
T = 25°C
V
DS
w 10 V
J
6.5 V
6.0 V
60
50
40
30
20
10
0
5.5 V
T = 25°C
J
T = 125°C
J
5.0 V
4.5 V
T = −55°C
J
0
1
2
3
4
5
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
0.07
0.06
0.05
0.04
0.03
0.02
0.10
0.08
0.06
0.04
I
= 32 A
V
GS
= 10 V
D
T = 25°C
J
T = 175°C
J
T = 125°C
J
T = 25°C
J
0.02
0.00
T = −55°C
J
5
6
7
8
9
10
10
15
20
25
30
35
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Region versus Gate Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
3
2.5
2
10000
1000
100
V
GS
= 0 V
I
= 32 A
= 10 V
D
V
GS
T = 150°C
J
1.5
1
T = 125°C
J
0.5
−50 −25
10
0
25
50
75
100 125 150 175
10
20
30
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
versus Voltage
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3
NTD6414AN
TYPICAL CHARACTERISTICS
10
2800
2400
2000
1600
1200
800
100
80
60
40
20
0
Q
T = 25°C
T
J
V
GS
= 0 V
8
6
4
2
0
V
V
DS
GS
Q
Q
gd
gs
C
iss
400
I
= 32 A
D
C
oss
T = 25°C
J
C
rss
0
0
20
40
60
80
100
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
100
10
35
V
I
= 80 V
= 32 A
= 10 V
DS
T = 25°C
J
30
25
20
15
10
5
D
V
GS
= 0 V
V
GS
t
r
t
f
t
d(off)
t
d(on)
1
0
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
V
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
100
10
1
160
140
120
100
80
I
D
= 32 A
10 ms
100 ms
1 ms
10 ms
V
= 10 V
GS
60
SINGLE PULSE
= 25°C
dc
T
C
40
R
LIMIT
DS(on)
20
THERMAL LIMIT
PACKAGE LIMIT
0
25
0.1
1
10
100
1000
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTD6414AN
TYPICAL CHARACTERISTICS
10
1
D = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
0.001
SINGLE PULSE
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Device
Package
Shipping†
NTD6414ANT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD6414AN−1G
IPAK
(Pb−Free)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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5
NTD6414AN
PACKAGE DIMENSIONS
DPAK
CASE 369AA−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.63
0.46
0.77
MAX
6.22
6.73
2.38
0.89
0.61
1.14
A
B
C
D
E
F
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
4
2
Z
A
H
S
1
3
H
J
L
9.80 10.40
U
0.46
0.58
2.29 BSC
R
S
U
V
Z
0.180 0.215
0.024 0.040
4.57
0.60
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
F
J
0.020
0.035 0.050
0.155 −−−
−−−
L
D 2 PL
STYLE 2:
PIN 1. GATE
2. DRAIN
M
0.13 (0.005)
T
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTD6414AN
PACKAGE DIMENSIONS
DPAK
CASE 369D−01
ISSUE B
C
B
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V
S
E
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 2:
PIN 1. GATE
G
M
T
0.13 (0.005)
2. DRAIN
3. SOURCE
4. DRAIN
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NTD6414AN/D
相关型号：
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