NTD6415ANL [ONSEMI]
N-Channel Power MOSFET 100 V, 23 A, 56 mΩ, Logic Level; N沟道功率MOSFET的100 V， 23 A， 56英里© ，逻辑电平
| 型号： | NTD6415ANL |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET 100 V, 23 A, 56 mΩ, Logic Level |
| 文件： | 总6页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD6415ANL
N--Channel Power MOSFET
100 V, 23 A, 56 mΩ, Logic
Level
Features
Low RDS(on)
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100% Avalanche Tested
AEC--Q101 Qualified
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
56 mΩ @ 4.5 V
52 mΩ @ 10 V
100 V
23 A
MAXIMUM RATINGS (T = 25C unless otherwise noted)
J
Parameter
Drain--to--Source Voltage
Gate--to--Source Voltage -- Continuous
Symbol
Value
100
±20
23
Unit
V
D
V
DSS
V
V
GS
Continuous Drain
Current
Steady
State
T
= 25C
= 100C
= 25C
I
A
C
D
G
T
C
16
Power Dissipation
Steady
State
T
C
P
83
W
S
D
Pulsed Drain Current
t
= 10 ms
I
80
A
p
DM
4
Operating and Storage Temperature Range
T , T
J
-- 5 5 t o
+175
C
stg
2
1
Source Current (Body Diode)
I
23
79
A
S
3
Single Pulse Drain--to--Source Avalanche
E
mJ
AS
DPAK
CASE 369AA
STYLE 2
Energy (V = 50 Vdc, V = 10 Vdc, I =
DD
GS
L(pk)
23 A, L = 0.3 mH, R = 25 Ω)
G
Lead Temperature for Soldering
Purposes, 1/8 from Case for 10 Seconds
T
L
260
C
MARKING DIAGRAM
& PIN ASSIGNMENT
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
1.8
39
Unit
4 Drain
Junction--to--Case (Drain) -- Steady State
R
θ
C/W
JC
JA
Junction--to--Ambient -- Steady State (Note 1)
R
θ
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
1
Gate
3
2
Source
Drain
(Cu Area 1.127 sq in [2 oz] including traces).
6415ANL = Device Code
Y
= Year
WW
G
= Work Week
= Pb--Free Package
ORDERING INFORMATION
Seedetailedorderingandshippinginformationinthepackage
dimensions section on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
March, 2010 -- Rev. 0
NTD6415ANL/D
NTD6415ANL
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
100
92
V
(BR)DSS
GS
D
V
= 0 V, I = 250 mA, T = --40C
GS
D
J
Drain--to--Source Breakdown Voltage
Temperature Coefficient
V
/T
J
115
mV/C
mA
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25C
1.0
100
DSS
J
V
DS
= 0 V,
GS
V
= 100 V
T = 125C
J
Gate--to--Source Leakage Current
I
V
= 0 V, V = 20 V
100
nA
GSS
DS
GS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
V
= V , I = 250 mA
1.0
2.0
V
GS(TH)
GS
DS
D
Negative Threshold Temperature
Coefficient
V
/T
J
4.8
mV/C
GS(TH)
Drain--to--Source On--Resistance
R
mΩ
V
= 4.5 V, I = 10 A
44
43
24
56
52
DS(on)
GS
D
V
= 10 V, I = 10 A
D
GS
DS
Forward Transconductance
g
V
= 5.0 V, I = 10 A
S
FS
D
CHARGES, CAPACITANCES AND GATE RESISTANCE
pF
Input Capacitance
C
1024
156
70
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1.0 MHz, V = 25 V
DS
GS
Reverse Transfer Capacitance
Total Gate Charge
nC
Q
20
G(TOT)
Threshold Gate Charge
Gate--to--Source Charge
Gate--to--Drain Charge
Total Gate Charge
Q
1.1
3.1
14
G(TH)
V
= 4.5 V, V = 80 V, I = 23 A
DS D
GS
Q
GS
GD
Q
Q
V
= 10 V, V = 80 V, I = 23 A
35
nC
ns
G(TOT)
GS
DS
D
SWITCHING CHARACTERISTICS (Note 3)
Turn--On Delay Time
t
11
91
40
71
d(on)
Rise Time
t
r
V
= 4.5 V, V = 80 V,
DD
GS
D
I
= 23 A, R = 6.1 Ω
G
Turn--Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN--SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
T = 25C
0.87
0.74
64
1.2
SD
RR
J
V
= 0 V, I = 23 A
S
GS
T = 125C
J
ns
Reverse Recovery Time
Charge Time
t
T
40
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
= 23 A
S
Discharge Time
T
24
b
Reverse Recovery Charge
Q
152
nC
RR
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
†
Device
Package
Shipping
NTD6415ANLT4G
DPAK
(Pb--Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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2
NTD6415ANL
45
45
40
35
30
25
20
15
10
5
T = 25C
V
≥ 10 V
J
DS
V
= 10 V
GS
40
35
30
25
20
15
10
5
3.6 V
4 V
5 V
3.4 V
3.2 V
T = 25C
J
3.0 V
2.8 V
T = 125C
J
T = --55C
J
0
0
0
1
2
3
4
5
1
2
3
4
V
, DRAIN--TO--SOURCE VOLTAGE (V)
V
, GATE--TO--SOURCE VOLTAGE (V)
GS
DS
Figure 1. On--Region Characteristics
Figure 2. Transfer Characteristics
0.050
0.048
0.046
0.044
0.042
0.040
0.050
0.048
0.046
0.044
0.042
0.040
I
= 23 A
T = 25C
J
D
T = 25C
J
V
= 4.5 V
GS
V
= 10 V
GS
2
3
4
5
6
7
8
9
10
5
10
15
I , DRAIN CURRENT (A)
20
25
V
, GATE--TO--SOURCE VOLTAGE (V)
GS
D
Figure 3. On--Region versus Gate Voltage
Figure 4. On--Resistance versus Drain
Current and Gate Voltage
3.0
2.5
2.0
1.5
1.0
0.5
10000
1000
100
V
= 0 V
I
= 23 A
= 4.5 V
GS
D
V
GS
T = 150C
J
T = 125C
J
--50 --25
0
25
50
75
100 125 150 175
10
20
30
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (C)
J
V
DS
, DRAIN--TO--SOURCE VOLTAGE (V)
Figure 5. On--Resistance Variation with
Temperature
Figure 6. Drain--to--Source Leakage Current
versus Voltage
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3
NTD6415ANL
2500
2000
1500
1000
500
10
Q
T
T = 25C
J
V
= 0 V
GS
8
6
4
2
0
C
iss
Q
ds
Q
gs
V
I
= 80 V
= 23 A
DS
C
rss
D
C
oss
T = 25C
J
0
0
10 20 30 40 50 60 70 80 90 100
, DRAIN--TO--SOURCE VOLTAGE (V)
0
5
10
15
20
25
30
35
V
Q , TOTAL GATE CHARGE (nC)
DS
g
Figure 7. Capacitance Variation
Figure 8. Gate--to--Source Voltage and
Drain--to--Source Voltage versus Total Charge
1000
100
10
25
20
15
10
5
V
I
= 80 V
= 23 A
= 4.5 V
T = 25C
J
DS
V
= 0 V
D
GS
V
GS
t
r
t
f
t
d(off)
t
d(on)
0
1
1
10
R , GATE RESISTANCE (Ω)
100
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95
V
, SOURCE--TO--DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
125
100
75
50
25
0
100
10
1
I
= 23 A
D
10 ms
100 ms
V
= 10 V
GS
1 ms
SINGLE PULSE
= 25C
10 ms
T
C
dc
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
1000
25
50
75
100
125
150
175
V
, DRAIN--TO--SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE
J
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTD6415ANL
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
NTD6415ANL
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA--01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
SEATING
PLANE
-- T --
2. CONTROLLING DIMENSION: INCH.
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.63
0.46
0.77
MAX
6.22
6.73
2.38
0.89
0.61
1.14
A
B
C
D
E
F
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
4
2
Z
A
H
S
1
3
H
J
L
9.80 10.40
U
0.46
0.58
2.29 BSC
R
S
U
V
Z
0.180 0.215
0.024 0.040
4.57
0.60
0 . 5 1
0.89
3 . 9 3
5.45
1.01
-- -- --
1.27
-- -- --
F
J
0 . 0 2 0
0.035 0.050
0 . 1 5 5 -- -- --
-- -- --
L
STYLE 2:
PIN 1. GATE
2. DRAIN
D 2 PL
M
0.13 (0.005)
T
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
SCALE 3:1
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTD6415ANL/D
相关型号：
NTD65N03R-001
TRANSISTOR 32 A, 25 V, 0.0146 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3, FET General Purpose Power
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