NTD5806N [ONSEMI]
Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK; 功率MOSFET的40 V , 33 A单N沟道, DPAK / IPAK型号: | NTD5806N |
厂家: | ONSEMI |
描述: | Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK |
文件: | 总7页 (文件大小:131K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTD5806N
Power MOSFET
40 V, 33 A, Single N−Channel, DPAK/IPAK
Features
• Low R
DS(on)
• High Current Capability
• Avalanche Energy Specified
• These are Pb−Free Devices
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V
R
MAX
I MAX
D
(BR)DSS
DS(on)
Applications
26 mW @ 4.5 V
19 mW @ 10 V
40 V
33 A
• CCFL Backlight
• DC Motor Control
• Power Supply Secondary Side Synchronous Rectification
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
G
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
V
"20
"30
V
GS
V
GS
V
S
− Non−Repetitive (t < 10 mS)
p
N−CHANNEL MOSFET
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
33
23
40
A
C
D
4
Current (R
(Note 1)
)
q
JC
Steady
State
T
C
4
Power Dissipation
(R ) (Note 1)
T
C
P
W
D
2
1
q
JC
3
1
Pulsed Drain Current
t = 10 ms
I
67
A
2
p
DM
3
DPAK
Operating Junction and Storage Temperature
T , T
−55 to
175
°C
J
stg
IPAK
CASE 369C
(Surface Mount)
STYLE 2
CASE 369D
(Straight Lead
DPAK)
Source Current (Body Diode)
I
33
39
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (V = 50 V, V = 10 V, R = 25 W,
DD
GS
G
MARKING DIAGRAMS
& PIN ASSIGNMENT
I
= 28 A, L = 0.1 mH, V = 40 V)
L(pk)
DS
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
4
Drain
4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Drain
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
2
Drain
1
3
Junction−to−Case (Drain)
R
3.7
°C/W
q
JC
Gate Source
1
2
3
Junction−to−Ambient − Steady State (Note 1)
R
57.5
q
JA
Gate Drain Source
1. Surface−mounted on FR4 board using 1 in sq pad size
Y
WW
= Year
= Work Week
(Cu area = 1.127 in sq [1 oz] including traces.
5806N = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
February, 2010 − Rev. 3
NTD5806N/D
NTD5806N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
45.5
29.5
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
mV/°C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
100
100
mA
DSS
J
V
= 0 V,
GS
DS
V
= 40 V
T = 150°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
1.4
2.5
V
GS(TH)
DS
D
Negative Threshold Temperature
Coefficient
V
/T
5.8
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
R
V
= 10 V, I = 15 A
12.7
17.8
19
26
mW
pF
DS(on)
GS
D
V
GS
= 4.5 V, I = 10 A
D
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
860
130
100
17
iss
V
GS
= 0 V, f = 1.0 MHz,
C
oss
V
DS
= 25 V
C
rss
Q
38
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Q
0.95
3.4
G(TH)
V
= 10 V, V = 20 V,
DS
GS
I
= 30 A
D
Q
GS
Q
4.5
GD
t
10.6
93.7
14.2
4.3
ns
ns
d(on)
t
r
V
GS
I
= 4.5 V, V = 20 V,
DD
= 30 A, R = 2.5 W
D
G
Turn−Off Delay Time
Fall Time
t
t
t
d(off)
t
f
Turn−On Delay Time
Rise Time
8.0
d(on)
t
r
49
V
GS
I
= 10 V, V = 20 V,
DD
= 30 A, R = 2.5 W
D
G
Turn−Off Delay Time
Fall Time
19.8
2.6
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.86
0.69
18.8
11.8
7.0
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 10 A
T = 150°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
ta
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 30 A
Discharge Time
tb
Reverse Recovery Charge
Q
10.9
nC
RR
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTD5806N
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
70
T = 25°C
10 V
J
V
≥ 10 V
DS
60
50
40
30
20
4.5 V
= 7, 6, 5.8, 5.5, 5.2, 5 V
V
GS
4.0 V
T = 100°C
J
3.5 V
T = 25°C
J
10
0
10
0
T = −55°C
J
0
0.5
1
1.5
2
2.5
3
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.021
0.019
0.017
0.015
0.013
0.05
0.04
T = 25°C
I
= 15 A
J
D
T = 25°C
J
0.03
0.02
0.01
0
V
= 4.5 V
GS
V
GS
= 10 V
0.011
4
5
6
7
8
9
10
10
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Drain Current
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
1000
100
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
GS
= 0 V
I
V
= 30 A
D
= 10 V
GS
T = 150°C
J
T = 100°C
J
10
−50 −25
0
25
50
75
100 125 150 175
2
12
22
32
42
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTD5806N
TYPICAL CHARACTERISTICS
2000
1500
1000
15
30
20
V
= 0 V
GS
T = 25°C
J
QT
10
V
DS
C
iss
V
GS
5
0
10
0
Q
Q
5
gs
gd
500
0
C
oss
I
= 30 A
D
T = 25°C
C
J
rss
10
Vgs
5
0
5
10
Vds
15 20 25 30 35 40
0
10
15
20
Q , TOTAL GATE CHARGE (nC)
g
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
1000
100
10
15
10
5
V
= 0 V
GS
V
= 32 V
= 30 A
= 10 V
DD
T = 25°C
J
I
D
V
GS
t
f
t
d(off)
t
r
t
d(on)
1
0
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
0.01
Single Pulse
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 11. Transient Thermal Resistance − DPAK Version
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4
NTD5806N
ORDERING INFORMATION
Order Number
†
Package
Shipping
NTD5806NG
IPAK (Straight Lead DPAK)
75 Units / Rail
(Pb−Free)
NTD5806NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTD5806N
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
G
0.13 (0.005)
T
STYLE 2:
PIN 1. GATE
2. DRAIN
SOLDERING FOOTPRINT*
3. SOURCE
4. DRAIN
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTD5806N
PACKAGE DIMENSIONS
IPAK (STRAIGHT LEAD DPAK)
CASE 369D−01
ISSUE B
C
B
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V
S
E
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 2:
PIN 1. GATE
2. DRAIN
G
M
T
0.13 (0.005)
3. SOURCE
4. DRAIN
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NTD5806N/D
相关型号:
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