NTD5865NL [ONSEMI]
N-Channel Power MOSFET 60 V, 40 A, 16 mΩ; N沟道功率MOSFET的60 V， 40 A ， 16毫欧
| 型号： | NTD5865NL |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET 60 V, 40 A, 16 mΩ |
| 文件： | 总7页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD5865NL
N--Channel Power MOSFET
60 V, 40 A, 16 mΩ
Features
Low Gate Charge
Fast Switching
High Current Capability
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100% Avalanche Tested
These Devices are Pb--Free, Halogen Free and are RoHS Compliant
V
R
DS(on)
MAX
I MAX
D
(BR)DSS
16 mΩ @ 10 V
19 mΩ @ 4.5 V
MAXIMUM RATINGS (T = 25C unless otherwise noted)
60 V
40 A
J
Parameter
Drain--to--Source Voltage
Symbol
Value
60
Unit
V
V
DSS
D
Gate--to--Source Voltage -- Continuous
Gate--to--Source Voltage
V
20
30
V
GS
GS
V
V
-- Non--Repetitive (t < 10 ms)
p
Continuous Drain
T
= 25C
= 100C
= 25C
I
40
26
52
A
C
D
G
Current (R
)
θ
JC
Steady
State
T
C
Power Dissipation
(R
T
C
P
W
D
S
)
θ
JC
N--CHANNEL MOSFET
Pulsed Drain Current
t = 10 ms
p
I
137
A
DM
4
Operating Junction and Storage Temperature
T , T
-- 5 5 t o
150
C
J
stg
4
Source Current (Body Diode)
I
40
36
A
mJ
A
S
Single Pulse Drain--to--Source
Avalanche Energy
(L =
0.1 mH)
E
2
1
AS
AS
1
2
3
I
27
3
DPAK
Lead Temperature for Soldering Purposes
T
260
C
IPAK
L
CASE 369AA
(Surface Mount)
STYLE 2
(1/8 from case for 10 s)
CASE 369D
(Straight Lead)
STYLE 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
& PIN ASSIGNMENT
THERMAL RESISTANCE MAXIMUM RATINGS
4
Parameter
Symbol
Value
Unit
Drain
4
Drain
Junction--to--Case (Drain)
R
θ
JC
2.4
42
C/W
Junction--to--Ambient -- Steady State (Note 1)
R
θ
JA
1. Surface--mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
2
Drain
1
3
Gate Source
1
2
3
Gate Drain Source
Y
WW
= Year
= Work Week
5865NL = Device Code
G
= Pb--Free Package
ORDERING INFORMATION
Seedetailedorderingandshippinginformationinthepackage
dimensions section on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
June, 2010 -- Rev. 1
NTD5865NL/D
NTD5865NL
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
60
V
(BR)DSS
GS
D
Drain--to--Source Breakdown Voltage
Temperature Coefficient
V
/T
J
55
mV/C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25C
1.0
100
mA
DSS
J
V
= 0 V,
= 60 V
GS
DS
V
T = 150C
J
Gate--to--Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.0
2.0
V
GS(TH)
GS
DS
D
Negative Threshold Temperature
Coefficient
V
/T
J
5.6
mV/C
GS(TH)
Drain--to--Source On Resistance
Drain--to--Source on Resistance
Forward Transconductance
R
R
V
= 10 V, I = 20 A
13
16
15
16
19
mΩ
mΩ
S
DS(on)
GS
D
V
= 4.5 V, I = 20 A
D
DS(on)
GS
gFS
V
= 15 V, I = 20 A
DS D
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
C
1400
137
95
29
1.1
4
pF
nC
iss
V
= 0 V, f = 1.0 MHz,
DS
GS
Output Capacitance
C
oss
V
= 25 V
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
Q
G(TOT)
Threshold Gate Charge
Gate--to--Source Charge
Gate--to--Drain Charge
Total Gate Charge
Q
G(TH)
V
= 10 V, V = 48 V,
DS
GS
I
= 40 A
D
Q
GS
GD
Q
8
V
= 4.5 V, V = 48 V,
15
nC
G(TOT)
GS
DS
= 40 A
I
D
Gate Resistance
R
G
1.3
Ω
SWITCHING CHARACTERISTICS (Note 3)
Turn--On Delay Time
Rise Time
t
8.4
12.4
26
ns
d(on)
t
r
V
= 10 V, V = 48 V,
DD
GS
D
I
= 40 A, R = 2.5 Ω
G
Turn--Off Delay Time
Fall Time
t
d(off)
t
4.4
f
DRAIN--SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25C
0.95
0.85
20
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 40 A
T = 125C
J
Reverse Recovery Time
Charge Time
t
ns
RR
ta
13
V
= 0 V, dIs/dt = 100 A/ms,
GS
I
= 40 A
S
Discharge Time
tb
7
Reverse Recovery Charge
Q
13
nC
RR
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
†
Order Number
NTD5865NL--1G
Package
Shipping
IPAK (Straight Lead)
(Pb--Free)
75 Units / Rail
2500 / Tape & Reel
NTD5865NLT4G
DPAK
(Pb--Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTD5865NL
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
10
0
80
4 V
V
= 10 V
V
10 V
GS
DS
3.8 V
70
60
50
40
30
20
10
0
T = 25C
J
4.5 V
3.6 V
3.4 V
3.2 V
T = 25C
J
3 V
2.8 V
T = 125C
J
T = --55C
J
2.6 V
3
0
1
2
4
5
1
2
3
4
5
V
, DRAIN--TO--SOURCE VOLTAGE (V)
V
, GATE--TO--SOURCE VOLTAGE (V)
GS
DS
Figure 1. On--Region Characteristics
Figure 2. Transfer Characteristics
0.030
0.025
0.020
0.015
0.010
0.018
0.016
0.014
0.012
0.010
T = 25C
J
I
= 40 A
D
T = 25C
V
= 4.5 V
= 10 V
J
GS
V
GS
2
3
4
5
6
7
8
9
10
5
10
15
20
25
30
35
40
V
, GATE--TO--SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
GS
Figure 3. On--Resistance vs. Gate Voltage
Figure 4. On--Resistance vs. Drain Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10000
1000
100
I
= 40 A
= 10 V
D
V
= 0 V
GS
V
GS
T = 150C
J
T = 125C
J
--50
--25
0
25
50
75
100
125
150
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (C)
J
V
, DRAIN--TO--SOURCE VOLTAGE (V)
DS
Figure 5. On--Resistance Variation with
Temperature
Figure 6. Drain--to--Source Leakage Current
vs. Voltage
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3
NTD5865NL
TYPICAL CHARACTERISTICS
10
1800
1600
1400
1200
1000
800
Q
V
= 0 V
T
GS
T = 25C
J
8
6
4
2
0
C
iss
Q
gs
Q
gd
600
400
V
= 48 V
DS
I
= 40 A
D
C
200
oss
T = 25C
J
C
rss
0
0
10
20
30
40
50
60
0
5
10
15
20
25
30
V
, DRAIN--TO--SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
DS
Figure 7. Capacitance Variation
Figure 8. Gate--to--Source vs. Total Charge
1000
100
10
40
35
30
25
20
15
10
5
V
= 0 V
GS
V
I
V
= 48 V
= 40 A
= 10 V
DD
GS
T = 25C
J
D
t
d(off)
t
r
t
d(on)
t
f
1
0
1
10
R , GATE RESISTANCE (Ω)
100
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00
V
, SOURCE--TO--DRAIN VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
40
35
30
25
20
15
10
5
I
= 27 A
V
= 10 V
D
GS
SINGLE PULSE
= 25C
T
C
100 ms
1 ms
10 ms
10 ms
dc
1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0
25
0.1
1
10
100
50
75
100
125
150
V
, DRAIN--TO--SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE
J
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTD5865NL
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
SINGLE PULSE
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
NTD5865NL
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA--01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
SEATING
PLANE
-- T --
2. CONTROLLING DIMENSION: INCH.
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.63
0.46
0.77
MAX
6.22
6.73
2.38
0.89
0.61
1.14
A
B
C
D
E
F
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
4
2
Z
A
H
S
1
3
H
J
L
9.80 10.40
U
0.46
0.58
2.29 BSC
R
S
U
V
Z
0.180 0.215
0.024 0.040
4.57
0.60
0 . 5 1
0.89
3 . 9 3
5.45
1.01
-- -- --
1.27
-- -- --
F
J
0 . 0 2 0
0.035 0.050
0 . 1 5 5 -- -- --
-- -- --
L
STYLE 2:
PIN 1. GATE
2. DRAIN
D 2 PL
M
0.13 (0.005)
T
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
SCALE 3:1
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTD5865NL
PACKAGE DIMENSIONS
IPAK
CASE 369D--01
ISSUE B
C
B
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V
S
E
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
-- T --
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
------
J
F
H
0.155
------
D 3 PL
STYLE 2:
PIN 1. GATE
2. DRAIN
G
M
0.13 (0.005)
T
3. SOURCE
4. DRAIN
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NTD5865NL/D
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