NTD26N08 [ONSEMI]

TRANSISTOR 80 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3, FET General Purpose Power;
NTD26N08
型号: NTD26N08
厂家: ONSEMI    ONSEMI
描述:

TRANSISTOR 80 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3, FET General Purpose Power

开关 晶体管
文件: 总2页 (文件大小:33K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NTD26N08, NTD26N08L  
Product Preview  
80 V Power MOSFET  
ON Semiconductor utilizes its latest MOSFET technology process  
to manufacture 80 V power MOSFET devices to achieve the lowest  
possible on–resistance per silicon area. These 80 V devices are  
designed for Power Management solutions in 42 V Automotive  
system applications. Typical applications include integrated starter  
alternator, electronic power steering, electronic fuel injection,  
catalytic converter heaters and other high power applications made  
possible via an automotive 42 V bus. ON Semiconductor’s latest  
technology offering continues to offer high avalanche energy  
capability and low reverse recovery losses.  
http://onsemi.com  
26 AMPERES  
26N08 Typ R  
= 37 m  
DS(on)  
26N08L Typ R  
= 41 mΩ  
DS(on)  
ELECTRICAL CHARACTERISTICS  
(T = 25°C unless otherwise noted)  
J
Characteristic  
Symbol  
Min Typ Max Unit  
OFF CHARACTERISTICS  
Drain–to–Source Breakdown  
Voltage  
V
Vdc  
(BR)DSS  
(V  
GS  
= 0 Vdc, I = 250 µAdc)  
80  
D
Zero Gate Voltage Drain Current  
I
µAdc  
DSS  
(V  
(V  
= 80 Vdc, V  
= 80 Vdc, V  
= 0 Vdc)  
= 0 Vdc,  
1.0  
10  
DS  
DS  
GS  
GS  
T =150°C)  
J
Gate–Body Leakage Current  
(V = ±20 Vdc, V = 0 Vdc)  
I
nAdc  
Vdc  
GSS  
±100  
GS DS  
ON CHARACTERISTICS  
Gate Threshold Voltage  
V
GS(th)  
(V  
DS  
= V , I = 250 µAdc)  
GS D  
NTD26N08  
2.0  
1.0  
3.0  
1.5  
4.0  
2.0  
NTD26N08L  
DPAK  
CASE 369A  
STYLE 2  
Static Drain–to–Source  
On–Resistance  
R
mΩ  
DS(on)  
(I = 13 Adc)  
D
NTD26N08, V = 10 V  
37  
41  
GS  
NTD26N08L, V  
= 5 V  
GS  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
October, 2000 – Rev. 0  
NTD26N08/D  
NTD26N08, NTD26N08L  
PACKAGE DIMENSIONS  
DPAK  
CASE 369A–13  
ISSUE AA  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
SEATING  
–T–  
PLANE  
C
B
R
INCHES  
DIM MIN MAX  
MILLIMETERS  
E
V
MIN  
5.97  
6.35  
2.19  
0.69  
0.84  
0.94  
MAX  
6.35  
6.73  
2.38  
0.88  
1.01  
1.19  
A
B
C
D
E
F
0.235  
0.250  
0.086  
0.027  
0.033  
0.037  
0.250  
0.265  
0.094  
0.035  
0.040  
0.047  
4
2
Z
A
K
S
1
3
G
H
J
0.180 BSC  
4.58 BSC  
U
0.034  
0.018  
0.102  
0.040  
0.023  
0.114  
0.87  
0.46  
2.60  
1.01  
0.58  
2.89  
K
L
0.090 BSC  
2.29 BSC  
F
J
R
S
U
V
Z
0.175  
0.020  
0.020  
0.030  
0.138  
0.215  
0.050  
---  
4.45  
0.51  
0.51  
0.77  
3.51  
5.46  
1.27  
---  
L
H
0.050  
---  
1.27  
---  
D 2 PL  
M
G
0.13 (0.005)  
T
STYLE 2:  
PIN 1. GATE  
2. DRAIN  
3. SOURCE  
4. DRAIN  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
NORTH AMERICA Literature Fulfillment:  
CENTRAL/SOUTH AMERICA:  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)  
Email: ONlit–spanish@hibbertco.com  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
Email: ONlit@hibbertco.com  
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support  
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)  
Toll Free from Hong Kong & Singapore:  
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada  
001–800–4422–3781  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
Email: ONlit–asia@hibbertco.com  
EUROPE: LDC for ON Semiconductor – European Support  
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)  
Email: ONlit–german@hibbertco.com  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)  
Email: ONlit–french@hibbertco.com  
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)  
Email: ONlit@hibbertco.com  
Email: r14525@onsemi.com  
ON Semiconductor Website: http://onsemi.com  
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781  
For additional information, please contact your local  
Sales Representative.  
*Available from Germany, France, Italy, UK, Ireland  
NTD26N08/D  

相关型号:

NTD26N08/D

80 V Power MOSFET
ETC

NTD26N08L

80V, 0.037ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
ONSEMI

NTD280N60S5Z

Power MOSFET, N-Channel, SUPERFET® V, Easy Drive with Zener Diode, 600 V, 13 A, 280 mΩ, DPAK
ONSEMI

NTD2955

Power MOSFET
ONSEMI

NTD2955-001

Power MOSFET
ONSEMI

NTD2955-001G

暂无描述
ONSEMI

NTD2955-1

12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
ONSEMI

NTD2955-1G

Power MOSFET
ONSEMI

NTD2955-1G

12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369D-01, DPAK-3
ROCHESTER

NTD2955D

Power MOSFET
ONSEMI

NTD2955G

Power MOSFET
ONSEMI

NTD2955G

12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369C-01, DPAK-3
ROCHESTER