NTD280N60S5Z [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® V, Easy Drive with Zener Diode, 600 V, 13 A, 280 mΩ, DPAK;型号: | NTD280N60S5Z |
厂家: | ONSEMI |
描述: | Power MOSFET, N-Channel, SUPERFET® V, Easy Drive with Zener Diode, 600 V, 13 A, 280 mΩ, DPAK |
文件: | 总7页 (文件大小:241K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel, SUPERFET),
with Zener Diode, DPAK
600 V, 280 mW, 13 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
600 V
280 mW @ V = 10 V
13 A
GS
D
NTD280N60S5Z
Description
G
SUPERFET V MOSFET Easy Drive series combines excellent
switching performance without sacrificing ease of use and EMI issues
for both hard and soft switching topologies.
S
N−CHANNEL MOSFET
Features
• 650 V @ T = 150°C, Typ.
J
• R
= 224 mW
• 100% Avalanche Tested
DS(on)
D
• Pb−Free, Halogen Free / BFR Free and are RoHS Compliant
Applications
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Lighting / Charger / Adapter / Industrial Power Supplies
G
S
DPAK
CASE 369AS
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
600
20
Unit
V
V
DSS
T280N
60S5Z
Gate−to−Source Voltage
DC
V
GS
V
AYWWZZ
AC (f > 1 Hz)
20
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
= 25°C
I
13
A
C
D
T
C
8
Power Dissipation
T
T
P
89
W
A
C
D
T280N60S5Z = Specific Device Code
Pulsed Drain Current (Note 1)
I
39
C
DM
A
Y
WW
ZZ
= Assembly Location
= Year
= Work Week
= Lot Code
Pulsed Source Current
(Body Diode) (Note 1)
I
39
A
SM
Operating Junction and Storage Temperature T , T
Range
−55 to
+150
°C
J
STG
Source Current (Body Diode)
I
13
82
A
S
ORDERING INFORMATION
Single Pulse Avalanche
Energy
I = 2.9 A
G
E
AS
mJ
L
R
= 25 W
†
Device
Package
Shipping
Avalanche Current
I
2.9
0.89
120
50
A
AS
NTD280N60S5Z
DPAK
(Pb−Free)
2500 / Tape &
Reel
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
mJ
AR
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
dv/dt
V/ns
Peak Diode Recovery dv/dt (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I ≤ 5.5 A, di/dt ≤ 200 A/s, V ≤ 400 V, starting T = 25°C.
SD
DD
J
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
April, 2023 − Rev. 1
NTD280N60S5Z/D
NTD280N60S5Z
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
1.4
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
°C/W
q
JC
R
52
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA, T = 25_C
600
−
−
−
V
(BR)DSS
GS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
= 10 mA, Referenced to 25_C
−
630
mV/_C
(BR)DSS
D
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0 V, V = 600 V, T = 25_C
−
−
−
−
1
mA
mA
DSS
GSS
DS
J
I
V
=
20 V, V = 0 V
5
GS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 5.5 A, T = 25_C
−
2.4
−
224
−
280
4
mW
V
DS(on)
GS
D
J
V
V
= V , I = 1 mA, T = 25_C
GS(th)
GS
DS
D
J
Forward Trans−conductance
g
FS
V
DS
= 20 V, I = 5.5 A
10.6
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 400 V, V = 0 V, f = 250 kHz
−
−
−
978
16.8
276
−
−
−
pF
ISS
DS
GS
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I
= Constant, V = 0 V to 400 V,
OSS(tr)
D DS
V
GS
= 0 V
Energy Related Output Capacitance
Total Gate Charge
C
V
= 0 V to 400 V, V = 0 V
−
−
−
−
−
30.5
17.9
4.53
4.8
−
−
−
−
−
OSS(er)
DS
GS
Q
V
= 400 V, I = 5.5 A, V = 10 V
nC
G(TOT)
DD
D
GS
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
Q
GS
GD
R
f = 1 MHz
5.11
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
V
GS
I
= 0/10 V, V = 400 V,
−
−
−
−
15.5
4.27
52
−
−
−
−
ns
d(ON)
DD
= 5.5 A, R = 12 W
D
G
t
r
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
4.53
SOURCE-TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
I
= 5.5 A, V = 0 V, T = 25_C
−
−
−
−
1.2
−
V
SD
RR
SD
GS
J
t
V
= 0 V, I = 5.5 A,
229
2114
ns
nC
GS
SD
dI/dt = 100 A/ms, V = 400 V
DD
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
NTD280N60S5Z
TYPICAL CHARACTERISTICS
30
25
20
15
10
5
1000
T =25°C
V
=20V
DS
J
100
10
1
V
=4V
=4.5V
=5V
=6V
=7V
GS
V
GS
V
V
V
GS
GS
GS
T =−55°C
J
T =25°C
J
V
=10V
T =150°C
GS
J
0
0
5
10
15
20
3
4
5
6
7
V
, Drain to Source Voltage (V)
V
, Gate to Source Voltage (V)
GS
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
500
400
300
200
100
0
1000
100
10
T =25°C
V
=0V
GS
J
1
T =150°C
J
V
V
=10V
=20V
T =25°C
GS
GS
J
T =−55°C
J
0.1
0
5
10
I
15
20
25
30
0
0.2
0.4
, Diode Forward Voltage (V)
SD
0.6
0.8
1
1.2
, Drain Current (A)
V
D
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
5
10
10
C
C
C
=C +C (C =shorted)
gs gd ds
V
=0V
I
=5.5A
D
iss
GS
=C +C
T =25°C
oss ds
=C
gd
J
4
10
f=250KHz
rss
gd
8
6
4
2
0
3
10
2
10
1
10
0
10
−1
−2
−3
10
10
10
C
ISS
C
C
V
V
=130V
=400V
OSS
DD
DD
RSS
0
100
200
300
400
500
600
0
2
4
6
8
10
Q , Gate Charge (nC)
G
12
14
16
18
20
V
, Drain to Source Voltage (V)
DS
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.onsemi.com
3
NTD280N60S5Z
TYPICAL CHARACTERISTICS
1.2
1.15
1.1
3
V
=0V
I =5.5A
D
GS
I =10mA
V
=10V
D
GS
2.5
2
1.05
1
1.5
1
0.95
0.9
0.5
0.85
0.8
0
−75 −50 −25
0
25
50
75 100 125 150 175
−75 −50 −25
0
25
50
75 100 125 150 175
T , Junction Temperature (°C)
T , Junction Temperature (°C)
J
J
Figure 8. On−Resistance Variation vs.
Figure 7. Breakdown Voltage Variation vs.
Temperature
Temperature
14
12
10
8
T
C=25°C
T
J=150°C
Single Pulse
101
Limited by RDS(ON)
6
100
4
pulseDuration=10u
pulseDuration=100u
pulseDuration=1m
pulseDuration=10m
pulseDuration=DC
2
10−1
0
25
50
75
100
125
150
0.1
1
10
100
1000
T , Case Temperature (°C)
VDS, Drain to Source Voltage (V)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
4
3.5
3
2.5
2
1.5
1
0.5
0
E
OSS
0
100
200
300
400
500
600
V
, Drain to Source Voltage (V)
DS
Figure 11. Eoss vs. Drain−to−Source Voltage
www.onsemi.com
4
NTD280N60S5Z
TYPICAL CHARACTERISTICS
10
D=0 is Single Pulse
1
0.1
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
Notes:
Z
T
(t)=1.4 ° C/W Max
θJC
JM
P
DM
=P
xZ
(t)+T
DM
θJC
C
t
1
Duty Cycle,D=t /t
1 2
t
2
0.01
−5
−4
−3
−2
−1
0
10
10
10
t, Rectangular Pulse Duration (s)
10
10
10
Figure 12. Transient Thermal Impedance
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC or its subsidiaries in the United States and/or other countries.
www.onsemi.com
5
NTD280N60S5Z
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
www.onsemi.com
6
NTD280N60S5Z
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
onsemi Website: www.onsemi.com
◊
www.onsemi.com
相关型号:
NTD2955-1G
12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369D-01, DPAK-3
ROCHESTER
NTD2955G
12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369C-01, DPAK-3
ROCHESTER
©2020 ICPDF网 联系我们和版权申明