NTB110N65S3HF [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，30 A，110 mΩ，D2PAK;
| 型号： | NTB110N65S3HF |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，30 A，110 mΩ，D2PAK |
| 文件： | 总10页 (文件大小：470K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTB110N65S3HF
MOSFET – N‐Channel,
SUPERFET III, FRFET
650 V, 30 A, 110 mW
Description
www.onsemi.com
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
110 mW @ 10 V
30 A
Consequently, SUPERFET III MOSFET is very suitable for the
various power systems for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
D
G
Features
• 700 V @ T = 150°C
J
S
• Typ. R
= 98 mW
DS(on)
N−CHANNEL MOSFET
• Ultra Low Gate Charge (Typ. Q = 62 nC)
g
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 522 pF)
oss(eff.)
• These Devices are Pb−Free and are RoHS Compliant
Applications
2
D PAK
• Telecom / Server Power Supplies
• Industrial Power Supplies
• EV Charger
(TO−263 3−Lead)
CASE 418AJ
• UPS / Solar
MARKING DIAGRAM
$Y&Z&3&K
NTB110
N65S3HF
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
NTB110N65S3HF = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2019 − Rev. 0
NTB110N65S3HF/D
NTB110N65S3HF
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
30
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
30
A
C
− Continuous (T = 100°C)
19.5
69
C
I
Drain Current
− Pulsed (Note 1)
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
380
AS
AS
I
4.4
E
2.4
mJ
V/ns
AR
dv/dt
100
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
50
P
(T = 25°C)
240
W
W/°C
°C
D
C
− Derate Above 25°C
1.92
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 4.4 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 15 A, di/dt ≤ 100 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.52
45
Unit
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
°C/W
R
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
†
Part Number
Top Marking
Package
Reel Size
Tape Width
Shipping
2
NTB110N65S3HF
NTB110N65S3HF
D PAK
330 mm
24 mm
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
NTB110N65S3HF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
V
V
= 0 V, I = 1 mA, T = 25°C
650
700
−
−
−
−
−
−
V
V
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150°C
GS
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
I = 15 mA, Referenced to 25°C
D
0.64
V/°C
DSS
J
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
−
−
−
−
97
−
10
−
mA
DSS
GS
= 520 V, T = 125°C
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 0.74 mA
3.0
−
−
5.0
110
−
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 15 A
98
18
D
g
FS
= 20 V, I = 15 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
2635
52
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
522
91
oss(eff.)
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 15 A, V = 10 V
62
g(tot)
D
GS
(Note 4)
Q
18
gs
Q
25
gd
ESR
f = 1 MHz
4.6
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
V
= 400 V, I = 15 A,
−
−
−
−
24
25
85
25
−
−
−
−
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R = 4.7 W
g
t
r
(Note 4)
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
30
69
A
A
V
S
I
SM
V
SD
Source to Drain Diode Forward
Voltage
V
GS
= 0 V, I = 15 A
1.3
SD
t
Reverse Recovery Time
V
= 0 V, I = 15 A,
−
−
95
−
−
ns
rr
GS
F
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
371
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3
NTB110N65S3HF
TYPICAL PERFORMANCE CHARACTERISTICS
100
10
1
100
V
=
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
GS
* Notes:
1. V = 20 V
DS
2. 250 ms Pulse Test
150°C
10
25°C
−55°C
* Notes:
1. 250 ms Pulse Test
2. T = 25°C
C
0.1
1
3
4
5
6
7
8
9
10
0.2
1
10
20
V , Drain-Source Voltage [V]
DS
V , Gate-Source Voltage [V]
GS
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.3
0.2
0.1
0.0
1000
100
10
* Note: T = 25°C
C
* Notes:
1. V = 0 V
GS
2. 250 ms Pulse Test
150°C
25°C
1
V
= 10 V
GS
−55°C
0.1
V
= 20 V
GS
0.01
0.001
0.0
0.5
1.0
1.5
2.0
0
20
40
I , Drain Current [A]
60
80
V
SD
, Body Diode Forward Voltage [V]
D
Figure 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
100000
10
* Note: I = 15 A
D
10000
1000
100
8
6
4
2
0
V
= 130 V
DS
C
iss
V
= 400 V
DS
C
oss
* Notes:
1. V = 0 V
GS
2. f = 1 MHz
10
1
C
C
C
= C (C = shorted)
gd ds
= C + C
= C
iss
C
rss
oss
rss
ds
gd
gd
0.1
1
10
100
1000
0
20
40
60
V , Drain-Source Voltage [V]
DS
Q , Total Gate Charge [nC]
g
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.onsemi.com
4
NTB110N65S3HF
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1.2
1.1
3.0
* Notes:
* Notes:
1. V = 0 V
GS
1. V = 10 V
GS
2. I = 10 mA
D
2.5
2.0
1.5
2. I = 15 A
D
1.0
0.9
0.8
1.0
0.5
0.0
−50
0
50
100
150
−50
0
50
100
150
T , Junction Temperature [5C]
J
T , Junction Temperature [5C]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variant vs. Temperature
200
30
100
10
30 ms
100 ms
1 ms
20
10
0
10 ms
1
DC
Operation in This Area
is Limited by R
DS(on)
* Notes:
0.1
0.01
1. T = 25°C
C
2. T = 150°C
J
3. Single Pulse
1
10
100
1000
25
50
75
100
125
150
V , Drain-Source Voltage [V]
DS
T , Case Temperature [5C]
C
Figure 9. Maximum Safe Operation Area
Figure 10. Maximum Drain Current
vs. Case Temperature
20
12
8
4
0
0
130
260
390
520
650
V , Drain to Source Voltage [V]
DS
Figure 11. EOSS vs. Drain to Source Voltage
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5
NTB110N65S3HF
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
P
0.1
DM
0.02
0.01
t
1
t
2
Notes:
(t) = r(t) × R
0.01
SINGLE PULSE
Z
q
q
JC
JC
R
q
= 0.52°C/W
JC
Peak T = P
× Z (t) + T
q
JC C
J
DM
Duty Cycle, D = t / t
1
2
0.001
−5
−4
−3
−2
−1
0
1
2
10
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 12. Transient Thermal Response Curve
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6
NTB110N65S3HF
IG = const.
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
VGS
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
NTB110N65S3HF
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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相关型号：
NTB13N10G
13A, 100V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418B-04, D2PAK-3
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