NSVEMD4DXV6T5G [ONSEMI]
Complementary Bipolar Digital Transistor (BRT);
| 型号： | NSVEMD4DXV6T5G |
| 厂家： | 
ONSEMI |
| 描述： | Complementary Bipolar Digital Transistor (BRT) 小信号双极晶体管 |
| 文件： | 总5页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMD4DXV6T1,
EMD4DXV6T5
Preferred Devices
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
http://onsemi.com
(3)
(2)
(1)
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMD4DXV6T1 series,
two complementary BRT devices are housed in the SOT−563 package
which is ideal for low power surface mount applications where board
space is at a premium.
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)
(5)
(6)
Features
6
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These are Pb−Free Devices
1
SOT−563
CASE 463A
STYLE 1
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q
A
1
and Q , − minus sign for Q (PNP) omitted)
2
1
MARKING DIAGRAM
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
V
V
50
Vdc
CBO
CEO
50
Vdc
U7 M G
I
100
mAdc
C
G
1
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
U7 = Specific Device Code
Total Device Dissipation
P
357
2.9
mW
mW/°C
D
M
= Date Code
T = 25°C (Note 1)
Derate above 25°C (Note 1)
A
G
= Pb−Free Package
(Note: Microdot may be in either location)
Thermal Resistance,
R
q
JA
350
°C/W
Junction-to-Ambient (Note 1)
ORDERING INFORMATION
Total Device Dissipation
P
500
4.0
mW
mW/°C
†
D
Device
Package
Shipping
T = 25°C (Note 1)
A
Derate above 25°C
EMD4DXV6T1G
SOT−563 4000/Tape & Reel
(Pb−Free)
Thermal Resistance,
R
q
250
°C/W
JA
Junction-to-Ambient (Note 1)
EMD4DXV6T5G
SOT−563 8000/Tape & Reel
(Pb−Free)
Junction and Storage Temperature
T , T
J
−55 to +150
°C
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. FR−4 board with minimum mounting pad.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
October, 2005− Rev. 1
EMD4DXV6/D
EMD4DXV6T1, EMD4DXV6T5
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = 50 V, I = 0)
I
I
−
−
−
−
−
−
100
500
0.2
nAdc
nAdc
mAdc
CB
E
CBO
CEO
Collector-Emitter Cutoff Current (V = 50 V, I = 0)
CB
B
Emitter-Base Cutoff Current (V = 6.0, I = 5.0 mA)
I
EBO
EB
C
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
80
−
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
(BR)CEO
Collector-Emitter Breakdown Voltage (I = 2.0 mA, I = 0)
C
B
DC Current Gain (V = 10 V, I = 5.0 mA)
h
FE
140
−
−
CE
C
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
0.25
0.2
−
Vdc
Vdc
Vdc
kW
C
B
CE(SAT)
Output Voltage (on) (V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
−
−
CC
B
L
OL
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kW)
V
4.9
7.0
0.17
−
CC
B
L
OH
Input Resistor
Resistor Ratio
R1
R1/R2
10
0.21
13
0.25
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = 50 V, I = 0)
I
I
−
−
−
−
−
−
100
500
0.1
nAdc
nAdc
mAdc
CB
E
CBO
CEO
Collector-Emitter Cutoff Current (V = 50 V, I = 0)
CB
B
Emitter-Base Cutoff Current (V = 6.0, I = 0 mA)
I
EBO
EB
C
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
80
−
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
(BR)CEO
Collector-Emitter Breakdown Voltage (I = 2.0 mA, I = 0)
C
B
DC Current Gain (V = 10 V, I = 5.0 mA)
h
FE
140
−
−
CE
C
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
0.25
0.2
−
Vdc
Vdc
Vdc
kW
C
B
CE(SAT)
Output Voltage (on) (V = 5.0 V, V = 3.5 V, R = 1.0 kW)
V
−
−
CC
B
L
OL
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kW)
V
4.9
32.9
0.8
−
CC
B
L
OH
Input Resistor
Resistor Ratio
R1
47
1.0
61.1
1.2
R1/R2
250
200
150
100
50
R
= 833°C/W
q
JA
0
−ꢀ50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
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2
EMD4DXV6T1, EMD4DXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — EMD4DXV6T1 PNP TRANSISTOR
1
180
T ꢁ=ꢁ75°C
A
I /I = 10
C B
V
= 10 V
CE
160
140
120
100
80
T ꢁ=ꢁ−25°C
A
25°C
−25°C
25°C
0.1
75°C
0.01
60
40
20
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4.5
4
100
10
1
T ꢁ=ꢁ75°C
f = 1 MHz
= 0 V
A
25°C
l
E
3.5
3
T
A
= 25°C
−25°C
2.5
2
1.5
1
V
= 5 V
O
0.5
0
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
= 0.2 V
25°C
O
T ꢁ=ꢁ−25°C
A
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
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3
EMD4DXV6T1, EMD4DXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — EMD4DXV6T1 NPN TRANSISTOR
10
1
1000
I /I = 10
T = −25°C
V
= 10 V
C
B
A
CE
T = 75°C
A
75°C
25°C
25°C
−25°C
100
0.1
0.01
10
0
20
40
60
80
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) vs. IC
Figure 8. DC Current Gain
1
100
10
1
25°C
75°C
f = 1 MHz
= 0 A
T = 25°C
A
l
E
0.8
T = −25°C
A
0.6
0.4
0.1
0.2
0
0.01
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , INPUT VOLTAGE (VOLTS)
in
V , REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
V
= 0.2 V
O
T = −25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage vs. Output Current
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4
EMD4DXV6T1, EMD4DXV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A
−X−
L
6
5
2
4
3
E
−Y−
MILLIMETERS
DIM MIN NOM MAX MIN
INCHES
NOM MAX
H
E
1
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.5 BSC
0.20
1.60
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
b 56 PL
C
e
M
0.08 (0.003)
X Y
L
0.10
1.50
0.30 0.004 0.008 0.012
1.70 0.059 0.062 0.066
H
E
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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EMD4DXV6/D
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