NSPM3042MXT5G [ONSEMI]
4.8 V 双向 ESD 和浪涌防护器件;
| 型号： | NSPM3042MXT5G |
| 厂家： | 
ONSEMI |
| 描述： | 4.8 V 双向 ESD 和浪涌防护器件 |
| 文件： | 总8页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSPM3042
4.8 V Bidirectional ESD and
Surge Protection Device
The NSPM3042 is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, high peak
pulse current handling capability and fast response time provide best
in class protection on designs that are exposed to ESD. Because of its
small size, it is suited for use in cellular phones, tablets, MP3 players,
digital cameras and many other portable applications where board
space comes at a premium.
www.onsemi.com
1
2
Features
• Low Clamping Voltage
• Low Leakage
• Small Body Outline: 1.0 mm x 0.6 mm
MARKING
DIAGRAM
• Protection for the following IEC Standards:
IEC61000−4−2 Level 4: 30 kV Contact Discharge
IEC61000−4−5 (Lightning) 43 A (8/20 ms)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
QM
X2DFN2
CASE 714AB
Q
M
= Specific Device Code
= Date Code
Typical Applications
• Battery Line Protection
• Audio Line Protection
• GPIO
ORDERING INFORMATION
†
Device
NSPM3042MXT5G
Package
Shipping
X2DFN2
8000 / Tape &
Reel
MAXIMUM RATINGS
(Pb−Free)
Rating
IEC 61000−4−2 (ESD)
Symbol
Value
Unit
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Contact
Air
30
30
kV
Operating Junction and Storage
Temperature Range
T , T
−65 to +150
°C
J
stg
Maximum Peak Pulse Current
I
PP
43
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
September, 2018 − Rev. 2
NSPM3042/D
NSPM3042
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
I
I
PP
Symbol
Parameter
R
V
I
Maximum Reverse Peak Pulse Current
DYN
PP
I
T
I
V
R
BR RWM
V
Clamping Voltage @ I
V
C
V
C
PP
V
I
V
V
R
T
RWM BR
C
V
RWM
Working Peak Reverse Voltage
I
R
I
R
Maximum Reverse Leakage Current @ V
DYN
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
PP
I
T
Bi−Directional Surge Protection
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
V
RWM
I/O Pin to GND
Pin 1 to 2
Pin 2 to 1
4.8
4.5
V
Breakdown Voltage
V
BR
I = 1 mA, I/O Pin to GND
T
Pin 1 to 2
Pin 2 to 1
4.85
4.55
5.2
5.0
6.0
6.0
V
Reverse Leakage Current
I
R
V
RWM
V
RWM
= 4.8 V, Pin 1 to Pin 2
= 4.5 V, Pin 2 to Pin 1
0.5
0.5
mA
Clamping Voltage
V
IEC61000−4−2, 8 kV Contact
I = 8 A, IEC61000−4−2 Level 2 Equivalent
PP
See Figures 1 & 2
5.50
V
V
C
Clamping Voltage TLP (Note 1)
V
C
( 4 kV Contact, 8 kV Air)
I
= 16 A, IEC61000−4−2 Level 4 Equivalent
5.74
PP
( 8 kV Contact, 15 kV Air)
Reverse Peak Pulse Current
I
IEC61000−4−5 (8 x 20 ms) per Figure 14
43
A
V
PP
Clamping Voltage 8x20 ms
Waveform per Figure 14 (Note 2)
V
I
PP
I
PP
= 1 A
= 43 A
4.9
7.4
6.2
8.0
C
Dynamic Resistance
Junction Capacitance
R
100 ns TLP Pulse
= 0 V, f = 1 MHz
0.03
80
W
DYN
C
V
200
pF
J
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP condtions: Z = 50 W, t = 100 ns, t = 1 ns, averaging window: t = 70 ns to t = 90 ns.
0
p
r
1
2
2. Non−repetitive current pulse at T = 25°C, per IEC61000−4−5 waveform.
A
www.onsemi.com
2
NSPM3042
TYPICAL CHARACTERISTICS
40
35
30
25
20
15
10
5
5
0
−5
−10
−15
−20
−25
−30
0
−35
−40
−5
−20
0
20
40
60
80
100
120
140
−20
0
20
40
60
80
100 120 140
TIME (ns)
TIME (ns)
Figure 1. ESD Clamping Voltage
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage
Negative 8 kV Contact per IEC61000−4−2
10
9
10
9
20
18
16
14
12
10
8
−20
−18
8
−16
−14
−12
−10
−8
8
7
7
6
6
5
5
4
4
6
3
−6
3
4
2
−4
2
2
1
0
10
−2
1
0
0
0
0
1
2
3
4
5
6
7
8
9
0
−1 −2 −3 −4 −5 −6 −7 −8 −9 −10
V
CTLP
(V)
V
CTLP
(V)
Figure 3. Positive TLP I−V Curve
Figure 4. Negative TLP I−V Curve
10
9
10
9
8
8
7
7
6
6
5
5
4
3
2
1
0
4
3
2
1
0
0
5
10 15 20 25 30 35 40 45 50 55 60
(A)
0
5
10 15 20 25 30 35 40 45 50 55 60
I
PK
I
PK
(A)
Figure 5. Positive Clamping Voltage vs. Peak
Figure 6. Negative Clamping Voltage vs. Peak
Pulse Current (tp = 8/20 ms)
Pulse Current (tp = 8/20 ms)
www.onsemi.com
3
NSPM3042
TYPICAL CHARACTERISTICS
1E−03
1E−04
1E−05
1E−06
1E−07
1E−08
1E−03
1E−04
1E−05
1E−06
1E−07
1E−08
1E−09
1E−10
1E−09
1E−10
1E−11
1E−11
1E−12
−6 −5 −4 −3 −2 −1
0
1
2
3
4
5
6
−7 −6 −5 −4 −3 −2 −1
0
1
2
3
4
5
6
7
V
R
(V)
V (V)
R
Figure 7. Breakdown Voltage
Figure 8. Reverse Leakage Current
100
90
80
70
60
50
40
30
20
10
0
−5 −4 −3 −2 −1
0
1
2
3
4
5
V
BIAS
(V)
Figure 9. Line Capacitance, f = 1 MHz
www.onsemi.com
4
NSPM3042
50 W Coax
Cable
Transmission Line Pulse (TLP) Measurement
L
Attenuator
S
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 10. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 11 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels. For more information
on TLP measurements and how to interpret them please
refer to AND9007/D.
÷
50 W Coax
Cable
I
M
V
M
10 MW
DUT
V
C
Oscilloscope
Figure 10. Simplified Schematic of a Typical TLP
System
Figure 11. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
www.onsemi.com
5
NSPM3042
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
I
peak
First Peak
Current
(A)
100%
90%
Test Volt-
age (kV)
Current at
30 ns (A)
Current at
60 ns (A)
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
I @ 30 ns
22.5
30
12
16
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 12. IEC61000−4−2 Spec
Oscilloscope
ESD Gun
DUT
50 W
Cable
50 W
Figure 13. Diagram of ESD Test Setup
ESD Voltage Clamping
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
100
t
r
PEAK VALUE I
@ 8 ms
RSM
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I /2 @ 20 ms
RSM
t
P
10
0
0
20
40
t, TIME (ms)
60
80
Figure 14. 8 X 20 ms Pulse Waveform
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X2DFN2 1.0x0.6, 0.65P
CASE 714AB
ISSUE B
DATE 21 NOV 2017
SCALE 8:1
NOTES:
0.10
C
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
A B
E
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
PIN 1
INDICATOR
MILLIMETERS
DIM MIN
NOM MAX
A
A1
b
D
E
e
L
0.34
−−−
0.45
0.95
0.55
0.37
0.03
0.50
1.00
0.60
0.65 BSC
0.25
0.40
0.05
0.55
1.05
0.65
0.05
C
TOP VIEW
NOTE 3
A
0.10
0.10
C
0.20
0.30
C
GENERIC
MARKING DIAGRAM*
A1
SEATING
PLANE
C
SIDE VIEW
XX M
e
b
XX = Specific Device Code
e/2
M
0.05
C A B
M
= Date Code
1
RECOMMENDED
2X
L
0.05
SOLDER FOOTPRINT*
M
C A B
1.20
2X
BOTTOM VIEW
2X
0.47
0.60
PIN 1
DIMENSIONS: MILLIMETERS
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON98172F
X2DFN2 1.0X0.6, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明