NSPM8181MUTBG [ONSEMI]
18 V Unidirectional ESD and Surge Protection Device;
| 型号： | NSPM8181MUTBG |
| 厂家： | 
ONSEMI |
| 描述： | 18 V Unidirectional ESD and Surge Protection Device |
| 文件： | 总5页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSPM8151, NSPM8181
15 V and 18 V Unidirectional
ESD and Surge Protection
Device
Features
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• Unidirectional High Voltage ESD & Surge Protection Device
• Provides ESD Protection to IEC61000−4−2 Level 4:
30 kV Contact Discharge
• IEC 61000−4−5 (lighting)
• High Voltage Zener Diode Protects Supply Rail up to 100 A (8/20 ms)
• These Devices are Pb−Free and are RoHS Compliant
UDFN6
D4 SUFFIX
CASE 517CS
APPLICATION DIAGRAM
Vcc (1)
BLOCK DIAGRAM
Cathode
Anode
GND (6)
MARKING DIAGRAM
DAP**
Ax M
G
GND (5)
1
Ax = Specific Device Code
x = 5 or E
M
= Date Code
G
= Pb−Free Package
**Die Attach Pad on
back of package
(connect to ground)
ORDERING INFORMATION
†
Device
Package
Shipping
NSPM8151MUTBG
UDFN6
(Pb−Free)
3000 / Tape &
Reel
NSPM8181MUTBG
UDFN6
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
August, 2017 − Rev. 1
NSPM8151/D
NSPM8151, NSPM8181
PACKAGE / PINOUT DIAGRAMS
Table 1. PIN DESCRIPTIONS
4−Channel, 6−Lead, UDFN−8 Package
Name Type Description
HV V HV ESD Channel
Top View
(Pins Down View)
Bottom View
(Pins Up View)
Pin
1
1
2
3
4
6
5
V
CC
DD
2
N/C
N/C
No Connect
No Connect
No Connect
Ground
XX M
3
Pin 1
Marking
4
N/C
5
GND
GND
6
5
1
2 3 4
6
Ground
6−Lead UDFN
ELECTRICAL CHARACTERISTICS
I
Symbol
Parameter
I
F
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
V
C
V
V
BR RWM
I
Maximum Reverse Leakage Current @ V
V
R
RWM
I
R
I
T
V
F
V
BR
Breakdown Voltage @ I
Test Current
T
I
T
QV
Maximum Temperature Coefficient of V
Forward Current
BR
BR
I
PP
I
F
V
F
Forward Voltage @ I
F
Uni−Directional Surge Protection
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
–55 to +125
–65 to +150
100
Units
°C
°C
A
Operating Temperature Range
Storage Temperature Range
Peak Current (t = 8/20 ms)
NSPM8151
NSPM8181
p
Peak Current (t = 8/20 ms)
119
A
p
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
V
C
@ I
PP
(Note 3)
Breakdown Voltage
V (Note 2) @ I (mA)
m
(8 x 20 s)
V
(V)
RWM
V
BR
V
(V)
I
PP
(A)
(Note 1)
I
R
@ V
ꢀ
ꢁ
A
)
T
C
RWM
Device
Max
15
Max
1
Min
Nom
17.5
22.5
Max
Max
Marking
Device Name
NSPM8151
NSPM8181
A5
A8
16
20
18.5
23.5
1
1
27
100
18
1
28
30
70
100
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. A surge protector is normally selected according to the working peak reverse voltage (V
DC or continuous peak operating voltage level.
), which should be equal to or greater than the
RWM
2. V measured at pulse test current I at an ambient temperature of 25°C.
BR
T
3. Surge current waveform per Figure 1.
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2
NSPM8151, NSPM8181
TYPICAL CHARACTERISTICS
t = rise time to peak value [8 ms]
r
t = decay time to half value [20 ms]
f
Peak
Value
100
Half Value
50
0
0 t
r
t
f
TIME (ms)
Figure 1. IEC61000−4−5 8/20 ꢁs Pulse
Waveform
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN6, 1.8x2, 0.4P
CASE 517CS
ISSUE O
DATE 30 APR 2013
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
EXPOSED Cu
MOLD CMPD
D
A B
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINALS
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED PAD
AS WELL AS THE TERMINALS.
DETAIL B
ALTERNATE
PIN ONE
REFERENCE
E
CONSTRUCTION
MILLIMETERS
2X
0.10 C
DIM
A
MIN
0.45
0.00
MAX
0.55
0.05
A1
A3
b
L
L
2X
0.10
C
0.125 REF
TOP VIEW
0.15
0.25
1.80 BSC
D
L1
0.35
0.55
0.94
D2
E
DETAIL B
2.00 BSC
A3
DETAIL A
0.74
E2
e
0.05
0.05
C
C
ALTERNATE
0.40 BSC
CONSTRUCTIONS
e1
e2
0.80 BSC
0.95 BSC
A
6X
L
0.20
---
0.40
0.15
A1
L1
SEATING
PLANE
NOTE 4
C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
e/2
e
0.10
C
XX M
DETAIL A
2X
D2
1
6X
b
G
4
1
4
1
0.07 C A B
2X
E2
XX = Specific Device Code
NOTE 3
0.05 C
M
= Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
6X
L
0.10
C
6
5
6
5
e1/2
e2
e1
BOTTOM VIEW
RECOMMENDED
MOUNTING FOOTPRINT*
SUPPLEMENTAL
BOTTOM VIEW
0.95
0.40
6X
0.48
PITCH
2X
0.55
PACKAGE
OUTLINE
20X.94
2.20
0.40
PITCH
DIMENSIONS: MILLIMETERS
6X
0.25
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON89602E
UDFN6 1.8X2, 0.4P
PAGE 1 OF 1
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