NSDP301MX2WT5G [ONSEMI]

Single PIN Diode for Attenuator and RF Switch;
NSDP301MX2WT5G
型号: NSDP301MX2WT5G
厂家: ONSEMI    ONSEMI
描述:

Single PIN Diode for Attenuator and RF Switch

文件: 总5页 (文件大小:188K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
80 V, 100 mA  
rs = 1.3 W typ.  
PIN Diode  
Single PIN Diode for  
Attenuator and RF Switch  
PIN Diode  
1
2
NSDP301MX2W,  
NSVDP301MX2W  
CATHODE  
ANODE  
Low rs characteristics is enable to use high frequency applications.  
This PIN diode is designed to realize compact and efficient designs.  
NSDP301MX2W in a X2DFNW2 miniature package enables  
designers to meet the challenging task of achieving higher efficiency  
and meeting reduced space requirements. In addition, wettable flank  
package improves the quality at mounted to PCB.  
X2DFNW2  
CASE 711BG  
MARKING DIAGRAM  
Features  
Low Series Resistance (r = 1.3 W typ.)  
s
RGM  
Small Interterminal Capacitance (C = 0.33 pF typ.)  
Less Parasitic Components  
RG = Specific Device Code  
Smallsized Package  
Wettable Flank Package  
M
= Date Code  
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
These Devices are PbFree, Halogen Free and are RoHS Compliant  
ORDERING INFORMATION  
Device  
NSDP301MX2WT5G  
Package  
Shipping  
X2DFNW2  
8000 /  
(PbFree)  
Tape & Reel  
Typical Applications  
RF Attenuator  
RF Switch  
NSVDP301MX2WT5G X2DFNW2  
8000 /  
Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
MAXIMUM RATINGS (T = 25°C)  
A
Parameter  
Reverse Voltage  
Symbol  
Value  
80  
Unit  
V
V
R
Forward Current  
I
100  
mA  
°C  
F
Operating Junction and Storage  
Temperature Range  
T , T  
55 to +150  
J
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Parameter  
Reverse Voltage  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
V
R
I
R
= 1 mA  
80  
Reverse Current  
I
V
= 80 V  
50  
nA  
V
R
R
Forward Voltage  
V
I = 1 mA  
F
0.78  
1.3  
0.81  
F
Series Resistance  
Interterminal Capacitance  
r
I = 10 mA, f = 100 MHz  
W
s
F
C
V
R
= 0 V, f = 1 MHz  
0.33  
pF  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
April, 2022 Rev. 2  
NSDP301MX2W/D  
NSDP301MX2W, NSVDP301MX2W  
TYPICAL CHARACTERISTICS  
1
100  
10  
T = 25°C  
A
f = 1 MHz  
T = 150°C  
A
T = 25°C  
A
1
T = 55°C  
A
0.1  
0.01  
0.1  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
80  
10  
0
10  
20  
30  
40  
V , Forward Voltage (V)  
F
V , Reverse Voltage (V)  
R
Figure 2. C VR  
Figure 1. IF VF  
100  
10  
1
1
T = 25°C  
A
I = 100 mA  
F
T = 75°C  
A
0.1  
0.01  
T = 50°C  
A
T = 25°C  
I = 1 mA  
F
A
I = 10 mA  
F
0.001  
0
20  
40  
60  
1
10  
100  
1000  
V , Reverse Voltage (V)  
R
f, Frequency (MHz)  
Figure 3. IR VR  
Figure 4. rs f  
0
100  
10  
1
T = 25°C  
f = 100 MHz  
A
I = 50 mA  
F
0.1  
0.2  
5 mA  
1 mA  
10 mA  
0.3  
0.4  
0.5 mA  
0.5  
0.6  
0.1  
1
0
1000 2000 3000 4000 5000 6000 7000  
I , Forward Current (mA)  
F
f, Frequency (MHz)  
Figure 5. rs IF  
Figure 6. Insertion Loss  
www.onsemi.com  
2
NSDP301MX2W, NSVDP301MX2W  
TYPICAL CHARACTERISTICS (Continued)  
0
5  
0
10  
20  
10  
15  
V
R
= 0 V  
30 V  
I = 0.5 mA  
F
30  
40  
50  
60  
70  
20  
25  
30  
35  
40  
45  
10 V  
1 mA  
10 mA  
0
1000 2000 3000 4000 5000 6000 7000  
f, Frequency (MHz)  
0
1000 2000 3000 4000 5000 6000 7000  
f, Frequency (MHz)  
Figure 7. Isolation  
Figure 8. Return Loss  
www.onsemi.com  
3
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
X2DFNW2 1.0x0.6, 0.65P  
CASE 711BG  
ISSUE C  
SCALE 8:1  
DATE 13 SEP 2019  
GENERIC  
MARKING DIAGRAM*  
XXM  
XX = Specific Device Code  
M
= Date Code  
*This information is generic. Please refer  
to device data sheet for actual part  
marking. PbFree indicator, “G”, may  
or not be present. Some products may  
not follow the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON15241G  
X2DFNW2 1.0X0.6, 0.65P  
PAGE 1 OF 1  
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the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
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rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
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TECHNICAL PUBLICATIONS:  
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