NSDP301MX3T5G [ONSEMI]

Single PIN Diode for Attenuator and RF Switch;


型号：	NSDP301MX3T5G
厂家：	ONSEMI
描述：	Single PIN Diode for Attenuator and RF Switch
文件：	总5页 (文件大小：193K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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PIN Diode

Single PIN Diode for

Attenuator and RF Switch

NSDP301MX3

Low rs characteristics is enable to use high frequency applications.

This PIN diode is designed to realize compact and efficient designs.

NSDP301MX3 in a X3DFN2 miniature package enables designers to

meet the challenging task of achieving higher efficiency and meeting

reduced space requirements.

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80 V, 100 mA

rs = 1.3 W typ.

PIN Diode

Features

• Low Series Resistance (rs = 1.3 W typ.)

• Small Interterminal Capacitance (C = 0.33 pF typ.)

• Less Parasitic Components

• Small−sized Package X3DFN2

• Pb−Free, Halogen Free and RoHS Compliance

CATHODE

ANODE

Typical Applications

MARKING

DIAGRAM

• RF Attenuator

• RF Switch

PIN 1

X3DFN2

CASE 152AF

MAXIMUM RATINGS (T = 25°C)

R M

Parameter

Symbol Value

Unit

Reverse Voltage

Forward Current

= Specific Device Code

= Date Code

100

°C

Operating Junction and Storage Temperature

Range

T , T

−55 to

+150

stg

ORDERING INFORMATION

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Device

NSDP301MX3T5G

Package

Shipping†

X3DFN2

10,000 / Tape &

Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

May, 2021 − Rev. 0

NSDP301MX3/D

NSDP301MX3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Parameter

Reverse Voltage

Symbol

Conditions

Min

Typ

Max

Unit

= 1 mA

Reverse Current

= 80 V

Forward Voltage

I = 1 mA

0.78

1.3

0.81

Series Resistance

Interterminal Capacitance

I = 10 mA, f = 100 MHz

= 0 V, f = 1 MHz

0.33

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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NSDP301MX3

TYPICAL CHARACTERISTICS

Figure 1. IF − VF

Figure 2. C − VR

Figure 3. IR − VR

Figure 4. rs − f

= 25°C

f = 100 MHz

Forward Current, IF − mA

Figure 5. rs − IF

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NSDP301MX3

PACKAGE DIMENSIONS

X3DFN2, 0.62x0.32, 0.355P, (0201)

CASE 152AF

ISSUE A

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

A B

PIN 1

INDICATOR

(OPTIONAL)

MILLIMETERS

DIM MIN

MAX

0.33

0.05

0.28

0.66

0.36

0.25

−−−

TOP VIEW

0.22

0.58

0.28

0.355 BSC

0.23

L2 0.17

0.05

RECOMMENDED

MOUNTING FOOTPRINT*

SIDE VIEW

SEATING

PLANE

0.30

0.74

2X b

0.31

0.05

C A B

DIMENSIONS: MILLIMETERS

2X L2

0.05

C A B

BOTTOM VIEW

See Application Note AND8398/D for more mounting details

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

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