NLVVHC1GT32DFT1G [ONSEMI]
2-Input OR Gate/CMOS Logic Level Shifter; 2输入或门/ CMOS逻辑电平转换器
| 型号： | NLVVHC1GT32DFT1G |
| 厂家： | 
ONSEMI |
| 描述： | 2-Input OR Gate/CMOS Logic Level Shifter |
| 文件： | 总6页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MC74VHC1GT32
2-Input OR Gate/CMOS
Logic Level Shifter
The MC74VHC1GT32 is an advanced high speed CMOS 2−input
OR gate fabricated with silicon gate CMOS technology. It achieves
high speed operation similar to equivalent Bipolar Schottky TTL
while maintaining CMOS low power dissipation.
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The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output.
The device input is compatible with TTL−type input thresholds and
the output has a full 5 V CMOS level output swing. The input protection
circuitry on this device allows overvoltage tolerance on the input,
allowing the device to be used as a logic−level translator from 3 V
CMOS logic to 5 V CMOS Logic or from 1.8 V CMOS logic to 3 V
CMOS Logic while operating at the high−voltage power supply.
The MC74VHC1GT32 input structure provides protection when
voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1GT32 to be used to interface 5 V circuits to
3 V circuits. The output structures also provide protection when
MARKING
DIAGRAMS
5
5
VN M G
1
G
SC−88A / SC70−5 / SOT−353
DF SUFFIX
1
5
CASE 419A
5
VN M G
G
V
CC
= 0 V. These input and output structures help prevent device
1
destruction caused by supply voltage − input/output voltage mismatch,
battery backup, hot insertion, etc.
1
TSOP−5 / SOT23−5 / SC59−5
DT SUFFIX
CASE 483
Features
• High Speed: t = 3.5 ns (Typ) at V = 5 V
PD
CC
VN
M
G
= Device Code
= Date Code*
= Pb−Free Package
• Low Power Dissipation: I = 2 mA (Max) at T = 25°C
CC
A
• TTL−Compatible Inputs: V = 0.8 V; V = 2 V
IL
IH
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
• CMOS−Compatible Outputs: V > 0.8 V ; V < 0.1 V @Load
OH
CC
OL
CC
• Power Down Protection Provided on Inputs and Outputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 65; Equivalent Gates = 15
PIN ASSIGNMENT
1
2
3
4
5
IN B
IN A
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
GND
OUT Y
V
CC
5
V
1
IN B
IN A
GND
CC
FUNCTION TABLE
2
Inputs
Output
Y
A
B
L
L
L
H
L
L
H
H
H
4
OUT Y
3
H
H
Figure 1. Pinout (Top View)
≥ 1
H
IN A
IN B
OUT Y
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Figure 2. Logic Symbol
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
July, 2013 − Rev. 12
MC74VHC1GT32/D
MC74VHC1GT32
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
V
V
CC
DC Supply Voltage
DC Input Voltage
DC Output Voltage
−0.5 to +7.0
−0.5 to +7.0
−0.5 to 7.0
V
IN
V
V
OUT
V
= 0
CC
V
High or Low State
−0.5 to V + 0.5
CC
I
Input Diode Current
−20
+20
mA
mA
mA
mA
mW
°C/W
°C
IK
I
Output Diode Current
DC Output Current, per Pin
V
< GND; V
> V
OK
OUT
OUT CC
I
+25
OUT
I
DC Supply Current, V and GND
+50
CC
CC
P
Power dissipation in still air
Thermal resistance
SC−88A, TSOP−5
SC−88A, TSOP−5
200
D
q
333
JA
T
Lead temperature, 1 mm from case for 10 s
Junction temperature under bias
Storage temperature
260
L
T
+150
−65 to +150
°C
J
T
stg
°C
V
ESD
ESD Withstand Voltage
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
> 2000
> 200
N/A
V
I
Latchup Performance
Above V and Below GND at 125°C (Note 4)
500
mA
Latchup
CC
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
3.0
0.0
Max
5.5
5.5
5.5
Unit
V
V
CC
DC Supply Voltage
DC Input Voltage
DC Output Voltage
V
IN
V
V
OUT
V
= 0
CC
0.0
0.0
V
High or Low State
V
CC
T
Operating Temperature Range
Input Rise and Fall Time
−55
+125
°C
A
t , t
r
V
CC
V
CC
= 3.3 V 0.3 V
= 5.0 V 0.5 V
0
0
100
20
ns/V
f
Device Junction Temperature versus
Time to 0.1% Bond Failures
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Junction
Temperature °C
Time, Hours
1,032,200
419,300
178,700
79,600
Time, Years
117.8
47.9
80
90
100
110
120
130
140
20.4
1
9.4
37,000
4.2
1
10
100
1000
17,800
2.0
TIME, YEARS
8,900
1.0
Figure 3. Failure Rate vs. Time Junction Temperature
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2
MC74VHC1GT32
DC ELECTRICAL CHARACTERISTICS
V
CC
T
A
= 25°C
T
A
≤ 85°C
−55 ≤ T ≤ 125°C
A
Symbol
Parameter
Test Conditions
(V)
Min
Typ
Max
Min
Max
Min
Max
Unit
V
IH
Minimum High−Level
Input Voltage
3.0
4.5
5.5
1.4
2.0
2.0
1.4
2.0
2.0
1.4
2.0
2.0
V
V
IL
Maximum Low−Level
Input Voltage
3.0
4.5
5.5
0.53
0.8
0.8
0.53
0.8
0.8
0.53
0.8
0.8
V
V
OH
Minimum High−Level
V
OH
= V or V
3.0
4.5
2.9
4.4
3.0
4.5
2.9
4.4
2.9
4.4
V
V
IN
IH
IL
Output Voltage
I
= −50 mA
V
IN
= V or V
IH IL
V
= V or V
IN
OH
OH
IH
IL
I
I
= −4 mA
= −8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
OL
Maximum Low−Level
V
OL
= V or V
3.0
4.5
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
IH
IL
Output Voltage
I
= 50 mA
V
IN
= V or V
IH IL
V
= V or V
IN
OL
OL
IH
IL
I
I
= 4 mA
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
I
Maximum Input
Leakage Current
V
= 5.5 V or GND
0 to
5.5
0.1
1.0
1.0
mA
mA
mA
mA
IN
IN
I
Maximum Quiescent
Supply Current
V
IN
= V or GND
5.5
5.5
0.0
2.0
20
40
CC
CC
I
Quiescent Supply
Current
Input: V = 3.4 V
1.35
0.5
1.50
5.0
1.65
10
CCT
IN
I
Output Leakage
Current
V
OUT
= 5.5 V
OPD
AC ELECTRICAL CHARACTERISTICS (C
= 50 pF, Input t = t = 3.0ns)
r f
load
T
A
= 25°C
T
A
≤ 85°C
−55 ≤ T ≤ 125°C
A
Min
Typ
Max
Min
Max
Min
Max
Symbol
Parameter
Maximum
Propagation Delay,
Input A or B to Y
Test Conditions
Unit
t
,
V
V
= 3.3 0.3 V
C = 15 pF
L
4.8
6.1
7.9
11.4
9.5
13.0
11.5
15.5
ns
PLH
CC
L
t
C = 50 pF
PHL
= 5.0 0.5 V
C = 15 pF
L
3.7
4.4
5.5
7.5
6.5
8.5
8.0
10.0
CC
L
C = 50 pF
C
Maximum Input
Capacitance
5.5
10
10
10
pF
pF
IN
Typical @ 25°C, V = 5.0 V
CC
11
C
Power Dissipation Capacitance (Note 5)
PD
5. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
PD
Average operating current can be obtained by the equation: I
) = C ꢀ V ꢀ f + I . C is used to determine the no−load dynamic
CC(OPR
PD CC in CC PD
2
power consumption; P = C ꢀ V
ꢀ f + I ꢀ V
.
D
PD
CC
in
CC
CC
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3
MC74VHC1GT32
50%
50% V
t
Input A or B
Output Y
CC
GND
t
PLH
PHL
V
V
OH
50% V
CC
OL
Figure 4. Switching Waveforms
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
C *
L
*Includes all probe and jig capacitance
Figure 5. Test Circuit
ORDERING INFORMATION
Device
†
Package
Shipping
M74VHC1GT32DFT1G
NLVVHC1GT32DFT1G*
M74VHC1GT32DFT2G
NLVVHC1GT32DFT2G*
M74VHC1GT32DTT1G
SC−88A / SOT−353 / SC−70−5
(Pb−Free)
3000 / Tape & Reel
3000 / Tape & Reel
TSOP−5 / SOT−23 / SC−59
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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4
MC74VHC1GT32
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE K
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
G
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5
4
3
−B−
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
1
2
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
0.026 BSC
0.65 BSC
M
M
B
D 5 PL
0.2 (0.008)
---
0.004
0.004
0.004
0.010
0.012
---
0.10
0.10
0.10
0.25
0.30
K
N
S
N
0.008 REF
0.20 REF
0.079
0.087
2.00
2.20
J
C
K
H
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5
MC74VHC1GT32
PACKAGE DIMENSIONS
TSOP−5
CASE 483−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5. OPTIONAL CONSTRUCTION: AN
ADDITIONAL TRIMMED LEAD IS ALLOWED
IN THIS LOCATION. TRIMMED LEAD NOT TO
EXTEND MORE THAN 0.2 FROM BODY.
NOTE 5
5X
D
0.20 C A B
2X
2X
0.10
T
T
M
5
4
3
0.20
B
S
1
2
K
L
DETAIL Z
G
A
MILLIMETERS
DIM
A
B
C
D
MIN
3.00 BSC
1.50 BSC
MAX
DETAIL Z
J
0.90
1.10
0.50
C
0.25
SEATING
PLANE
0.05
G
H
J
K
L
M
S
0.95 BSC
H
0.01
0.10
0.20
1.25
0
0.10
0.26
0.60
1.55
10
3.00
T
SOLDERING FOOTPRINT*
_
_
2.50
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MC74VHC1GT32/D
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