NCP362AMUTBG [ONSEMI]

USB Positive Overvoltage and Overcurrent Protection with TVS for VBUS and Low Capacitance ESD Diodes for Data; USB正过压和过流保护带电视的VBUS及低电容ESD二极管用于数据
NCP362AMUTBG
型号: NCP362AMUTBG
厂家: ONSEMI    ONSEMI
描述:

USB Positive Overvoltage and Overcurrent Protection with TVS for VBUS and Low Capacitance ESD Diodes for Data
USB正过压和过流保护带电视的VBUS及低电容ESD二极管用于数据

ESD二极管 电视
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中文:  中文翻译
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NCP362  
USB Positive Overvoltage  
and Overcurrent Protection  
with TVS for VBUS and Low  
Capacitance ESD Diodes for  
Data  
The NCP362 disconnects systems at its output when wrong VBUS  
operating conditions are detected at its input. The system is positive  
overvoltage protected up to +20 V, overcurrent protected up to  
750 mA, and receives protection from ESD diodes for the high speed  
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MARKING  
DIAGRAMS  
XXXM  
G
UDFN10  
CASE 517AV  
USB data and V  
lines. Thanks to an integrated PMOS FET, no  
BUS  
external device is necessary, reducing the system cost and the PCB  
area of the application board.  
XXX  
M
G
= Specific Device Code  
= Date Code  
= PbFree Package  
The NCP362 is able to instantaneously disconnect the output from  
the input if the input voltage exceeds the overvoltage threshold  
OVLO. Thanks to an overcurrent protection, the integrated PMOS  
turns off when the charge current exceeds the current limit (see  
options in ordering information).  
The NCP362 provides a negative going flag (FLAG) output, which  
alerts the system that voltage, current or overtemperature faults have  
occurred.  
PIN CONNECTIONS  
1
EN  
GND  
IN  
10 FLAG  
PAD1  
GND  
9
8
7
6
OUT  
GND  
NC  
2
3
4
5
In addition, the device integrates ESD diodes for V  
and data  
BUS  
V
TVS  
BUS  
lines which are IEC6100042, level 4 compliant. The ESD diodes  
for D+ and Dare compatible with high speed USB thanks to an ultra  
low capacitance of 0.5 pF.  
PAD2  
GND  
GND  
NC  
NCP362A Version  
+ OVP/OCP)  
Features  
(V  
BUS TVS  
Overvoltage Protection up to 20 V  
Undervoltage and Overvoltage Lockout (UVLO/OVLO)  
Overcurrent Protection  
1
EN  
GND  
IN  
10 FLAG  
PAD1  
GND  
9
8
7
6
OUT  
GND  
D+  
2
3
4
5
Transient Voltage Suppressor for V  
Pin  
BUS  
Ultra Low Capacitance ESD for Data Lines  
Alert FLAG Output and EN Enable Pin  
Thermal Shutdown  
Compliance to IEC6100042 (Level 4)  
Compliance Machine Model and Human Body Model  
10 Lead UDFN 2x2.5 mm Package  
This is a PbFree Device  
Applications  
USB Devices  
Mobile Phones  
Peripheral  
NC  
PAD2  
GND  
GND  
D−  
NCP362B Version  
(D+/ESD low cap + OVP/OCP)  
1
2
3
EN  
10 FLAG  
PAD1  
GND  
GND  
IN  
9
8
7
6
OUT  
GND  
D+  
V
TVS  
GND  
4
5
BUS  
PAD2  
GND  
D−  
Personal Digital Assistant  
MP3/MP4 Players  
TV and Set Top Boxes  
NCP362C Version  
+ D+/ESD low cap + OVP/OCP)  
(V  
BUS TVS  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 15 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
March, 2009 Rev. 0  
NCP362/D  
NCP362  
USB Connector  
Bottom Connector  
VIN/VBUS  
VBUS  
OUT  
Pin 1  
Battery Charger  
System  
D+  
D  
ID  
Pin 2  
Pin 3  
Pin 4  
Soft  
start  
I limit  
>550 mA  
GND  
Pin 5  
VREF  
Driver  
OVLO  
UVLO  
Thermal  
shutdown  
Logic  
VBUS TVS  
FLAG  
EN pin  
GND  
NCP362A  
D+  
USB Transciever  
D−  
Figure 1. Typical Application Circuit with Wall Adapter / VBUS TVS Protection (NCP362A)  
USB Connector  
VIN/VBUS  
VBUS  
OUT  
Pin 1  
Battery Charger  
System  
D+  
D−  
ID  
Pin 2  
Pin 3  
Pin 4  
Soft  
start  
I limit  
>550 mA  
GND  
Pin 5  
VREF  
Driver  
Logic  
OVLO  
UVLO  
Thermal  
shutdown  
VBUS TVS  
FLAG  
EN pin  
D+  
D−  
GND  
NCP362C  
D+  
USB Transciever  
D−  
Figure 2. Typical Application Circuit with Full Integrated ESD for USB (NCP362C)  
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2
NCP362  
PIN FUNCTION DESCRIPTION  
Pin No.  
Name  
Type  
Description  
1
EN  
INPUT  
Enable Pin. The device enters in shutdown mode when this pin is tied to a high level. In this case the  
output is disconnected from the input. To allow normal functionality, the EN pin shall be connected to  
GND or to a I/O pin. This pin does not have an impact on the fault detection.  
2
3
GND  
IN  
POWER Ground  
POWER Input Voltage Pin. This pin is connected to the V  
must be connected between this pin and GND.  
. A 1 mF low ESR ceramic capacitor, or larger,  
BUS  
4
V
BUS  
TVS  
INPUT  
Cathode of the V  
transient voltage suppressor diode. (NCP362A & NCP362C) This pin is not  
BUS  
connected in the NCP362B  
5
6
7
8
9
GND  
POWER Ground  
D−  
D+  
INPUT  
INPUT  
Cathode of the DESD diode. (NCP362B & NCP362C) This pin is not connected in the NCP362A  
Cathode of the D+ ESD diode. (NCP362B & NCP362C) This pin is not connected in the NCP362A  
GND  
OUT  
POWER Ground  
OUTPUT Output Voltage Pin. The output is disconnected from the V  
power supply when the input voltage is  
BUS  
above OVLO threshold or below UVLO threshold. A 1 mF capacitor must be connected to this pin.  
The two OUT pins must be hardwired to common supply.  
10  
FLAG  
OUTPUT Fault Indication Pin. This pin allows an external system to detect a fault on V  
pin. The FLAG pin  
BUS  
goes low when input voltage exceeds OVLO threshold. Since the FLAG pin is open drain functional-  
ity, an external pull up resistor to V must be added.  
CC  
PAD1  
PAD2  
GND  
GND  
POWER Ground. Must be used for power dissipation. See PCB recommendations.  
POWER Anode of the TVS and/or ESD diodes. Must be connected to GND.  
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3
NCP362  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
0.3  
Unit  
V
MinimumVoltage to GND (Pins IN, EN, OUT, FLAG)  
Maximum Voltage to GND (Pin IN)  
Vmin  
Vmax  
21  
V
in  
Maximum Voltage to GND (Pins EN, OUT, FLAG)  
Maximum DC Current from Vin to Vout (PMOS) (Note 1)  
Thermal Resistance, JunctiontoAir  
Vmax  
Imax  
R
7.0  
V
600  
mA  
°C/W  
°C  
°C  
°C  
V
280  
q
JA  
Operating Ambient Temperature Range  
Storage Temperature Range  
T
A
40 to +85  
65 to +150  
150  
T
stg  
Junction Operating Temperature  
T
J
Human Body Model (HBM) (Note 2)  
Pins EN, IN, OUT, GND  
2000  
V
16000  
BUS TVS  
Machine Model (MM) (Note 3)  
Pins EN, IN, OUT, GND  
V
200  
400  
V
BUS TVS  
IEC 6100042  
Pin V  
Vesd  
BUS TVS  
Contact  
Air  
30  
30  
kV  
kV  
Pins D+ & D−  
Contact  
Air  
10  
15  
kV  
kV  
Forward Voltage @ 10 mA  
V
Pin V  
Pins D+ & D−  
1.1  
1.0  
BUS TVS  
Moisture Sensitivity  
MSL  
Level 1  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
RecommendedOperating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. With minimum PCB area. By decreasing R , the current capability increases. See PCB recommendation page 9.  
q
JA  
2. Human Body Model, 100 pF discharged through a 1.5 kW resistor following specification JESD22/A114.  
3. Machine Model, 200 pF discharged through all pins following specification JESD22/A115.  
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4
 
NCP362  
ELECTRICAL CHARACTERISTICS  
(Min/Max limits values (40°C < T < +85°C) and V = +5.0 V. Typical values are T = +25°C, unless otherwise noted.)  
A
in  
A
Characteristic  
Symbol  
Conditions  
Min  
1.2  
Typ  
Max  
20  
Unit  
V
Input Voltage Range  
V
in  
Undervoltage Lockout Threshold  
Uvervoltage Lockout Hysteresis  
Overvoltage Lockout Threshold  
Overvoltage Lockout Hysteresis  
UVLO  
UVLO  
V
falls below UVLO threshold  
rises above OVLO threshold  
2.85  
50  
3.0  
70  
3.15  
90  
V
in  
mV  
V
hyst  
OVLO  
OVLO  
V
in  
5.43  
50  
5.675  
100  
150  
750  
20  
5.9  
125  
200  
950  
35  
mV  
mV  
mA  
mA  
mA  
mA  
mV  
hyst  
V
in  
versus V Dopout  
V
drop  
V = 5 V, I charge = 500 mA  
in  
out  
Overcurrent Limit  
I
lim  
V
in  
= 5 V  
550  
Supply Quiescent Current  
Standby Current  
Idd  
No Load, V = 5.25 V  
in  
I
V
in  
= 5 V, EN = 1.2 V  
26  
37  
std  
Zero Gate Voltage Drain Current  
FLAG Output Low Voltage  
I
V
DS  
= 20 V, V = 0 V  
0.08  
DSS  
GS  
Vol  
V
in  
> OVLO  
400  
flag  
Sink 1 mA on FLAG pin  
FLAG Leakage Current  
EN Voltage High  
FLAG  
FLAG level = 5 V  
5.0  
nA  
V
leak  
V
ih  
V
V
from 3.3 V to 5.5 V  
from 3.3 V to 5.5 V  
1.2  
in  
EN Voltage Low  
V
il  
0.55  
V
in  
EN Leakage Current  
EN  
EN = 5.5 V or GND  
170  
nA  
leak  
TIMINGS  
Start Up Delay  
t
From V > UVLO to V = 0.8xV , See Fig 3 & 9  
4.0  
3.0  
0.7  
15  
ms  
ms  
ms  
on  
in  
out  
in  
FLAG going up Delay  
Output Turn Off Time  
t
t
From V > UVLO to FLAG = 1.2 V, See Fig 3 & 10  
in  
start  
t
off  
From V > OVLO to V 0.3 V, See Fig 4 & 11  
1.5  
in  
out  
V
in  
increasing from 5 V to 8 V at 3 V/ms.  
Alert Delay  
From V > OVLO to FLAG 0.4 V, See Fig 4 & 12  
1.0  
3.0  
ms  
ms  
stop  
in  
V
in  
increasing from 5 V to 8 V at 3 V/ms  
Disable Time  
t
dis  
From EN 0.4 to 1.2V to V 0.3 V, See Fig 5 & 13  
out  
V
in  
= 4.75 V.  
Thermal Shutdown Temperature  
Thermal Shutdown Hysteresis  
T
150  
30  
°C  
°C  
sd  
T
sdhyst  
ESD DIODES (T = 25°C, unless otherwise noted)  
A
Capacitance (Note 7)  
Pin V  
Pins D+ & D−  
C
pF  
V
30  
0.5  
BUS TVS  
0.9  
Clamping Voltage (Notes 5, 6, 7)  
V
C
Pin V  
Pins D+ & D−  
@ I = 5.9 A  
23.7  
9.8  
BUS TVS  
PP  
@ I = 1.0 A  
PP  
Working Peak Reverse Voltage  
(Note 7)  
V
RWM  
V
Pin V  
12  
BUS TVS  
Pins D+ & D−  
5.0  
Maximum Reverse Leakage  
Current  
I
R
@ V  
1.0  
mA  
RWM  
Breakdown Voltage (Note 4)  
V
BR  
@ I = 1.0 mA  
V
T
Pin V  
Pins D+ & D−  
13.5  
5.4  
BUS TVS  
4. V is measured with a pulse test current I at an ambient temperature of 25°C.  
BR  
T
5. Surge current waveform per Figure 28 in ESD paragraph.  
6. For test procedures see Figures 26 and 27: IEC6100042 spec, diagram of ESD test setup and Application Note AND8307/D.  
7. ESD diode parameters are guaranteed by design.  
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5
 
NCP362  
ELECTRICAL CHARACTERISTICS  
A
I
(T = 25°C unless otherwise noted)  
I
F
Symbol  
Parameter  
Maximum Reverse Peak Pulse Current  
Clamping Voltage @ I  
I
PP  
V
C
PP  
V
RWM  
Working Peak Reverse Voltage  
V
C
V
V
I
Maximum Reverse Leakage Current @ V  
BR RWM  
R
RWM  
V
I
V
F
R
T
V
BR  
Breakdown Voltage @ I  
Test Current  
T
I
I
T
I
F
Forward Current  
V
F
Forward Voltage @ I  
F
P
Peak Power Dissipation  
Max. Capacitance @V = 0 and f = 1 MHz  
pk  
I
PP  
C
R
*AdditionalV , V  
and V voltage can be available. Please  
BR  
C
RWM  
UniDirectional TVS  
contact your ON Semiconductor representative for availability.  
<OVLO  
OVLO  
UVLO  
V
in  
V
in  
t
off  
t
on  
V
R  
x I  
in  
DSon  
V
in  
R  
x I  
DS(on)  
0.8 V  
in  
V
out  
V
out  
0.3 V  
t
stop  
t
start  
FLAG  
FLAG  
1.2 V  
0.4 V  
Figure 3. Start Up Sequence  
Figure 4. Shutdown on Over Voltage Detection  
EN  
1.2 V  
EN  
V
1.2 V  
t
dis  
OVLO  
V
out  
UVLO  
out  
0.3 V  
V
in  
R  
x I  
DS(on)  
t
start  
FLAG  
FLAG  
Figure 5. Disable on EN = 1  
Figure 6. FLAG Response with EN = 1  
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6
NCP362  
CONDITIONS  
IN  
OUT  
V
IN  
> OVLO or V < UVLO  
IN  
Voltage, Current and Thermal Detection  
Figure 7.  
CONDITIONS  
IN  
OUT  
UVLO < V < OVLO  
IN  
Voltage, Current and Thermal Detection  
Figure 8.  
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7
NCP362  
TYPICAL OPERATING CHARACTERISTICS  
Figure 9. Start Up. Vin=Ch1, Vout=Ch2  
Figure 10. FLAG Going Up Delay. Vin=Ch1,  
FL:AG=Ch3  
Figure 12. Alert Delay. Vout=Ch1, FLAG=Ch3  
Figure 11. Output Turn Off time. Vin=Ch1,  
Vout=Ch2  
Figure 13. Disable Time. EN=Ch4, Vin=Ch1,  
Vout=Ch2  
Figure 14. Thermal Shutdown. Vin=Ch1,  
Vout=Ch2, FLAG=Ch3  
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8
NCP362  
TYPICAL OPERATING CHARACTERISTICS  
450  
400  
350  
300  
250  
200  
V
in  
= 3.6 V  
150  
100  
50  
V
in  
= 5 V  
0
50  
0
50  
100  
150  
TEMPERATURE (°C)  
Figure 15. RDS(on) vs. Temperature  
(Load = 500 mA)  
Figure 16. Output Short Circuit  
900  
880  
860  
840  
820  
800  
780  
760  
740  
720  
180  
160  
140  
120  
100  
80  
V
V
V
= 3.25 V  
in  
in  
in  
= 3.6 V  
= 4.2 V  
125°C  
25°C  
V
= 5 V  
in  
60  
40  
40°C  
V
in  
= 5.25 V  
20  
0
50  
0
50  
TEMPERATURE (°C)  
100  
150  
1
3
5
7
9
11  
13 15 17  
19 21  
V , INPUT VOLTAGE (V)  
in  
Figure 18. Overcurrent Protection Threshold  
vs. Temperature  
Figure 17. Quiescent Current vs. Input Voltage  
900  
25°C  
880  
860  
840  
820  
800  
780  
760  
740  
720  
125°C  
85°C  
0°C  
25°C  
40°C  
3
3.5  
4
4.5  
5
5.5  
INPUT VOLTAGE (V)  
Figure 19. Overcurrent Protection Threshold  
vs. Input Voltage  
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9
NCP362  
Figure 21. VBUS TVS Clamping Voltage Screenshot  
Figure 20. VBUS TVS Clamping Voltage Screenshot  
Negative 8 kV contact per IEC 6100042  
Positive 8 kV contact per IEC 6100042  
Figure 22. D+ & DClamping Voltage Screenshot  
Positive 8 kV Contact per IEC6100042  
Figure 23. D+ & DClamping Voltage Screenshot  
Negative 8 kV Contact per IEC6100042  
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10  
NCP362  
Operation  
is automatically turned off (5 ms) if the charge current  
NCP362 provides overvoltage protection for positive  
voltage, up to 20 V. A PMOS FET protects the systems  
exceeds I . NCP362 goes into turn on and turn off mode  
lim  
as long as defect is present. The internal ton delay (4 ms  
typical) allows limiting thermal dissipation. The Flag pin  
goes to low level when an overcurrent fault appears. That  
allows the microcontroller to count defect events and turns  
off the PMOS with EN pin.  
(i.e.: VBUS) connected on the V pin, against positive  
out  
overvoltage. The Output follows the VBUS level until  
OVLO threshold is overtaken.  
Undervoltage Lockout (UVLO)  
To ensure proper operation under any conditions, the  
device has a builtin undervoltage lock out (UVLO)  
V
out  
circuit. During V positive going slope, the output remains  
in  
disconnected from input until V voltage is above 3.0 V  
in  
nominal. The FLAG output is pulled to low as long as V  
in  
does not reach UVLO threshold. This circuit has a 70 mV  
hysteresis to provide noise immunity to transient condition.  
t
I
I
limit  
V
in  
(V)  
20 V  
OVLO  
UVLO  
0
t
on  
t
t
off  
Retrieve normal  
operation  
Overcurrent  
V
out  
Figure 25. Overcurrent Event Example  
FLAG Output  
OVLO  
NCP362 provides a FLAG output, which alerts external  
systems that a fault has occurred.  
UVLO  
0
This pin is tied to low as soon as: 1.2 V < V < UVLO,  
in  
V
> OVLO, I  
> I , T > 150°C. When NCP362  
in  
charge limit J  
Figure 24. Output Characteristic vs. Vin  
Overvoltage Lockout (OVLO)  
recovers normal condition, FLAG is held high. The pin is  
an open drain output, thus a pull up resistor (typically 1 MW  
Minimum 10 kW) must be provided to V . FLAG pin is  
an open drain output.  
To protect connected systems on V  
pin from  
out  
CC  
overvoltage, the device has a builtin overvoltage lock out  
(OVLO) circuit. During overvoltage condition, the output  
remains disabled until the input voltage exceeds 6.0 V.  
EN Input  
To enable normal operation, the EN pin shall be forced  
to low or connected to ground. A high level on the pin  
disconnects OUT pin from IN pin. EN does not overdrive  
an OVLO or UVLO fault.  
FLAG output is tied to low until V is higher than  
in  
OVLO. This circuit has a 100 mV hysteresis to provide  
noise immunity to transient conditions.  
Overcurrent Protection (OCP)  
Internal PMOS FET  
The NCP362 integrates overcurrent protection to  
prevent system/battery overload or defect. The current  
limit threshold is internally set at 750 mA. This value can  
be changed from 150 mA to 750 mA by a metal tweak,  
please contact your ON Semiconductor representative for  
availability. During current fault, the internal PMOS FET  
The NCP362 includes an internal PMOS FET to protect  
the systems, connected on OUT pin, from positive  
overvoltage. Regarding electrical characteristics, the  
R
, during normal operation, will create low losses on  
pin, characterized by V versus V dropout.  
DS(on)  
V
out  
in out  
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11  
NCP362  
IEC6100042 Waveform  
IEC 6100042 Spec.  
I
peak  
Test  
Voltage  
(kV)  
First Peak  
100%  
90%  
Current at  
30 ns (A)  
Current at  
60 ns (A)  
Current  
(A)  
Level  
1
2
3
4
2
4
6
8
7.5  
15  
4
8
2
4
6
8
I @ 30 ns  
22.5  
30  
12  
16  
I @ 60 ns  
10%  
t
P
= 0.7 ns to 1 ns  
Figure 26. IEC6100042 Spec  
Oscilloscope  
ESD Gun  
TVS  
50 W  
Cable  
50 W  
Figure 27. Diagram of ESD Test Setup  
The following is taken from Application Note  
AND8308/D Interpretation of Datasheet Parameters  
for ESD Devices.  
systems such as cell phones or laptop computers it is not  
clearly defined in the spec how to specify a clamping  
voltage at the device level. ON Semiconductor has  
developed a way to examine the entire voltage waveform  
across the ESD protection diode over the time domain of  
an ESD pulse in the form of an oscilloscope screenshot,  
which can be found on the datasheets for all ESD protection  
diodes. For more information on how ON Semiconductor  
creates these screenshots and how to interpret them please  
refer to AND8307/D.  
ESD Voltage Clamping  
For sensitive circuit elements it is important to limit the  
voltage that an IC will be exposed to during an ESD event  
to as low a voltage as possible. The ESD clamping voltage  
is the voltage drop across the ESD protection diode during  
an ESD event per the IEC6100042 waveform. Since the  
IEC6100042 was written as a pass/fail spec for larger  
100  
t
PEAK VALUE I  
@ 8 ms  
r
RSM  
90  
80  
70  
60  
50  
40  
30  
20  
PULSE WIDTH (t ) IS DEFINED  
P
AS THAT POINT WHERE THE  
PEAK CURRENT DECAY = 8 ms  
HALF VALUE I /2 @ 20 ms  
RSM  
t
P
10  
0
0
20  
40  
t, TIME (ms)  
60  
80  
Figure 28. 8 X 20 ms Pulse Waveform  
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12  
NCP362  
PCB Recommendations  
two different example of current capability, depending on  
PCB area:  
With 280°C/W (without PCB area), allowing DC  
The NCP362 integrates a 500 mA rated PMOS FET, and  
the PCB rules must be respected to properly evacuate the  
heat out of the silicon. The UDFN PAD1 must be connected  
to ground plane to increase the heat transfer if necessary  
from an application standpoint. Of course, in any case, this  
pad shall be not connected to any other potential.  
current is 500 mA  
2
With 210°C/W (200 mm ), the charge DC current  
allows with a 85°C ambient temperature is:  
I = (T -T )/(R  
x R  
)
DSON  
J
A
JA  
q
By increasing PCB area, the R  
of the package can be  
JA  
q
I = 800 mA  
decreased, allowing higher charge current to fill the battery.  
Taking into account that internal bondings (wires  
between package and silicon) can handle up to 1 A (higher  
than thermal capability), the following calculation shows  
In every case, we recommend to make thermal  
measurement on final application board to make sure of the  
final Thermal Resistance.  
310  
290  
1 oz C.F.  
270  
1 oz Sim  
2 oz Sim  
2 oz C.F.  
250  
230  
210  
190  
175  
150  
0
25 50 75 100 125150175 200225 250275 300 325350  
2
COPPER HEAT SPREADING AREA (mm )  
Figure 29.  
Top View  
Bottom View  
Figure 30. Demo Board Layout  
http://onsemi.com  
13  
NCP362  
TP3  
Vcc  
Vcc  
R1  
R2  
J4  
10k  
TP1  
10k  
HEADER 3  
TP2  
VBUS IN  
1
2
3
VBUS TVS  
TP4  
J5  
J2  
U1  
In  
/FLAG  
9
1
2
3
4
5
6
7
8
3
4
1
2
3
4
5
6
Out  
/Flag  
/EN  
TP5  
/EN  
2
1
C2  
1μF  
VBus  
C1  
1μF  
NCP362  
S1 STRAP2  
10  
1
6
7
D  
D+  
R3  
9
10  
11  
USB OUT  
10k  
HEADER 11  
J3  
1
2
TP6  
ID  
GND  
Figure 31. Demo Board Schematic  
Manufacturer  
Bill of Material  
Designation  
Specification  
R1, R2  
10k - CMS0805 1%  
C1, C2  
Murata GRM188R61E105KA12D  
ON Semiconductor  
1 mF, 25 V, X5R, CM0805  
NCP362  
GND Jumper  
EN, FLAG, IN, V  
WM8083-ND  
Jumper Ground 1mm pitch 10.16 mm  
SMB R 114 665 PCB Plated Gold  
5 pins USB mini  
, ID, Vcc  
BUS  
USB Input Connector  
USB Output Connector  
Hirose UX60-MB-5S  
AU Y1006 R  
4 pins USB A  
http://onsemi.com  
14  
NCP362  
ORDERING INFORMATION  
Device  
Marking  
Package  
Shipping  
NCP362AMUTBG  
ADA  
UDFN10  
3000 / Tape & Reel  
3000 / Tape & Reel  
3000 / Tape & Reel  
(PbFree)  
NCP362BMUTBG  
NCP362CMUTBG  
ADG  
ADC  
UDFN10  
(PbFree)  
UDFN10  
(PbFree)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
SELECTION GUIDE  
The NCP362 can be available in several undervoltage, overvoltage, overcurrent and clamping voltage versions.  
Part number is designated as follows:  
NCP362xxxMUxxTBG  
a b c  
d e f g  
Code  
Contents  
a
ESD diode options  
A: TVS diode on pin 4  
B: ESD diodes on pins 6 & 7  
C: Option A & B  
b
c
d
e
f
TVS Pin 4 V  
ESD Pin 6 & 7 V  
voltage : 12 V  
RWM  
voltage : 5 V  
RWM  
Overcurrent Typical Threshold  
: 750 mA  
UVLO Typical Threshold  
: 3.00 V  
OVLO Typical Threshold  
: 5.675 V  
Tape & Reel Type  
B: = 3000  
g
PbFree  
NOTE: Please contact your ON Semiconductor representative for  
availability of additional options.  
http://onsemi.com  
15  
NCP362  
PACKAGE DIMENSIONS  
UDFN10 2x2.5, 0.5P  
CASE 517AV01  
ISSUE O  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED  
TERMINAL AND IS MEASURED BETWEEN  
0.15 AND 0.30mm FROM TERMINAL.  
4. COPLANARITY APPLIES TO THE EXPOSED  
PAD AS WELL AS THE TERMINALS.  
D
B
E
L
L
A
L1  
DETAIL A  
PIN ONE  
REFERENCE  
OPTIONAL  
CONSTRUCTIONS  
MILLIMETERS  
2X  
0.15 C  
DIM  
A
MIN  
0.45  
0.00  
MAX  
0.55  
0.05  
MOLD CMPD  
EXPOSED Cu  
A1  
A3  
b
0.13 REF  
2X  
0.15  
C
TOP VIEW  
0.20  
0.30  
D
2.50 BSC  
A3  
D2  
D3  
E
1.35  
0.30  
1.55  
0.50  
DETAIL B  
A3  
A
C
2.00 BSC  
0.10  
0.08  
C
C
A1  
E2  
e
0.95  
1.15  
DETAIL B  
0.50 BSC  
1.08 BSC  
OPTIONAL  
F
CONSTRUCTION  
K
0.20  
---  
0.30  
0.15  
A1  
L
0.20  
---  
NOTE 4  
SEATING  
PLANE  
L1  
SIDE VIEW  
SOLDERING FOOTPRINT*  
0.10  
C
A
B
10X b  
1.55  
D2  
0.10  
C
C
A
B
10X  
DETAIL A  
1.13  
0.35  
F
NOTE 3  
0.05  
10X  
L
1
5
6
10X  
E2  
0.45  
1.15 2.30  
0.10  
C
A
B
10  
K
D3  
PACKAGE  
OUTLINE  
e
F
1
0.50  
0.10  
C
A
B
1.13  
0.50  
PITCH  
BOTTOM VIEW  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
MountingTechniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any  
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over  
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under  
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,  
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death  
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,  
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of  
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  
SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81357733850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your loca  
Sales Representative  
NCP362/D  

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