NCP338_16 [ONSEMI]

2A Ultra-Small Controlled Load Switch;
NCP338_16
型号: NCP338_16
厂家: ONSEMI    ONSEMI
描述:

2A Ultra-Small Controlled Load Switch

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NCP338  
2A Ultra-Small Controlled  
Load Switch with  
Auto-discharge Path  
The NCP338 is very low Ron MOSFET controlled by external logic  
pin, allowing optimization of battery life, and portable device  
autonomy.  
Indeed, due to a current consumption optimization with PMOS  
structure, leakage currents are eliminated by isolating connected IC on  
the battery when not used.  
www.onsemi.com  
MARKING  
DIAGRAM  
Output discharge path is also embedded to eliminate residual  
voltages on the output rail.  
Proposed in a wide input voltage range from 1.0 V to 3.6 V, in a  
small 0.8 x 1.2 mm WLCSP6, pitch 0.4 mm.  
AM  
AYW  
WLCSP6  
CASE 567FY  
AM = Specific Device Code  
A
Y
= Assembly Location  
= Year  
Features  
1.0 V − 3.6 V Operating Range  
16 mW P MOSFET at 3.6 V  
DC Current Up to 2 A  
Output Auto−discharge  
Active High EN Pin  
W
= Work Week  
PIN DIAGRAM  
1
2
WLCSP6 0.8 x 1.2 mm  
ESD Ratings: 6 kV HBM, 250 V MM  
This is a Pb−Free Device  
A
OUT  
IN  
B
C
OUT  
GND  
IN  
Typical Applications  
Mobile Phones  
Tablets  
Digital Cameras  
GPS  
Portable Devices  
EN  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
V+  
LS  
NCP338  
DCDC Converter  
A2  
B2  
A1  
B1  
Platform IC’n  
IN OUT  
IN OUT  
or  
LDO  
C2  
EN  
ENx  
EN  
0
Figure 1. Typical Application Circuit  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2016 − Rev. 3  
NCP338/D  
NCP338  
PIN FUNCTION DESCRIPTION  
Pin  
Number  
Pin Name  
Type  
Description  
IN  
A2, B2  
POWER  
Load−switch input voltage; connect a 1 mF or greater ceramic capacitor from IN to GND as  
close as possible to the IC.  
GND  
EN  
C1  
C2  
POWER  
INPUT  
Ground connection.  
Enable input, logic high turns on power switch.  
OUT  
A1, B1  
OUTPUT  
Load−switch output; connect a 1 mF ceramic capacitor from OUT to GND as close as pos-  
sible to the IC is recommended.  
BLOCK DIAGRAM  
IN: Pin A2, B2  
OUT: Pin A1, B1  
Gate driver and soft  
start control  
Control  
logic  
EN: Pin C2  
EN block  
GND: Pin C1  
Figure 2. Block Diagram  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
−0.3 to + 4.0  
0 to + 4.0  
−40 to + 125  
−40 to + 150  
6000  
Unit  
V
IN, OUT, EN, Pins  
V
V
V
EN , IN , OUT  
From IN to OUT Pins: Input/Output  
Maximum Junction Temperature  
V
V
V
IN , OUT  
T
J
°C  
°C  
V
Storage Temperature Range  
T
STG  
Human Body Model (HBM) ESD Rating are (Note 1 and 2)  
Machine Model (MM) ESD Rating are (Note 1 and 2)  
Moisture Sensitivity (Note 3)  
ESD HBM  
ESD MM  
MSL  
250  
V
Level 1  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. According to JEDEC standard JESD22−A108.  
2. This device series contains ESD protection and passes the following tests:  
Human Body Model (HBM) 2.0 kV per JEDEC standard: JESD22−A114 for all pins.  
Machine Model (MM) 200 V per JEDEC standard: JESD22−A115 for all pins.  
3. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020.  
www.onsemi.com  
2
 
NCP338  
OPERATING CONDITIONS  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
V
Operational Power Supply  
Enable Voltage  
1.0  
3.6  
V
IN  
V
EN  
0
−40  
−40  
1
3.6  
+85  
T
Ambient Temperature Range  
Junction Temperature Range  
Decoupling input capacitor  
Decoupling output capacitor  
25  
25  
°C  
°C  
mF  
mF  
A
T
+125  
J
C
IN  
C
1
OUT  
R
Thermal Resistance Junction to Air  
Maximum DC current  
WLCSP package (Note 5)  
100  
°C/W  
q
JA  
I
2
A
OUT  
P
D
Power Dissipation Rating (Note 6)  
T
25°C  
WLCSP package  
WLCSP package  
1
W
W
A
T = 85°C  
A
0.4  
4. Latch up Current Maximum Rating: 100 mA per JEDEC standard: JESD78 class II.  
5. The R is dependent of the PCB heat dissipation and thermal via.  
q
JA  
6. The maximum power dissipation ( ) is given by the following formula:  
PD  
TJMAX * TA  
PD  
+
RqJA  
ELECTRICAL CHARACTERISTICS Min and Max Limits apply for between −40°C to +85°C for  
between 1.0 V to 3.6 V  
VIN  
TA  
(Unless otherwise noted). Typical values are referenced to T = +25°C and V = 3.6 V (Unless otherwise noted).  
A
IN  
Symbol  
Parameter  
Conditions  
Min  
Typ  
16  
Max  
Unit  
POWER SWITCH  
V
IN  
V
IN  
V
IN  
V
IN  
= 3.6 V  
= 2.5 V  
= 1.8 V  
= 1.2 V  
T = 25°C  
A
27  
30  
36  
40  
40  
45  
87  
99  
−40°C < T < 85°C  
A
T = 25°C  
A
21  
−40°C < T < 85°C  
A
Static drain−source on−state resist-  
ance at −200 mA  
mW  
T = 25°C  
A
27  
R
DS(on)  
−40°C < T < 85°C  
A
T = 25 °C  
A
52  
−40°C < T < 85°C  
A
Static drain−source on−state resist-  
ance at −100 mA  
V
= 1.1 V  
T = 25°C  
67  
65  
IN  
A
Rdis  
Output discharge path  
High−level input voltage  
Low−level input voltage  
EN leakage current  
EN = low  
Vin = 3.3 V  
90  
W
V
V
IH  
0.95  
Vin = 1.8 V  
V
IL  
0.5  
V
I
20  
nA  
EN  
CURRENT CONSUMPTION  
V
V
= open, EN = low, V = 3.6 V  
20  
4
OUT  
IN  
Istd  
Iq  
Standby current  
300  
= open, EN = low, V = 1.8 V  
OUT  
IN  
nA  
V
= open, EN = high, V = 3.6 V  
200  
80  
600  
300  
OUT  
OUT  
IN  
Quiescent current  
V
= open, EN = high, V = 1.8 V  
IN  
7. Parameters are guaranteed for C  
and R  
connected to the OUT pin with respect to the ground.  
LOAD  
LOAD  
8. Guaranteed by design and characterization.  
www.onsemi.com  
3
 
NCP338  
ELECTRICAL CHARACTERISTICS Min and Max Limits apply for between −40°C to +85°C for  
between 1.0 V to 3.6 V  
VIN  
TA  
(Unless otherwise noted). Typical values are referenced to T = +25°C and V = 3.6 V (Unless otherwise noted).  
A
IN  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
TIMINGS  
C
R
= 0.1 mF,  
= 500 W  
LOAD  
LOAD  
40  
40  
20  
25  
10  
10  
20  
200  
(Note 7)  
T
ON  
Turn on time  
C
R
= 1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
C
R
= 0.1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
T
R
V
OUT  
rise time  
C
R
= 1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
V
IN  
= 1.2 V  
ms  
C
R
= 0.1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
T
OFF  
Turn off time  
C
R
= 1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
C
R
= 0.1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
T
FALL  
V
OUT  
fall time  
C
R
= 1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
TIMINGS  
C
R
= 0.1 mF,  
= 500 W  
LOAD  
LOAD  
40  
40  
30  
35  
10  
10  
15  
150  
(Note 7)  
T
ON  
Turn on time  
C
R
= 1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
C
R
= 0.1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
T
R
V
OUT  
rise time  
C
R
= 1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
V
IN  
= 1.8 V  
ms  
C
R
= 0.1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
T
OFF  
Turn off time  
C
R
= 1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
C
R
= 0.1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
T
FALL  
V
OUT  
fall time  
C
R
= 1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
7. Parameters are guaranteed for C  
and R  
connected to the OUT pin with respect to the ground.  
LOAD  
LOAD  
8. Guaranteed by design and characterization.  
www.onsemi.com  
4
NCP338  
ELECTRICAL CHARACTERISTICS Min and Max Limits apply for between −40°C to +85°C for  
between 1.0 V to 3.6 V  
VIN  
TA  
(Unless otherwise noted). Typical values are referenced to T = +25°C and V = 3.6 V (Unless otherwise noted).  
A
IN  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
TIMINGS  
C
R
= 0.1 mF,  
= 500 W  
LOAD  
LOAD  
30  
32  
20  
20  
10  
10  
10  
100  
(Note 7)  
T
ON  
Turn on time  
C
R
= 1 mF,  
= 500 W  
LOAD  
LOAD  
0
0
0
0
80  
50  
(Note 7)  
C
R
= 0.1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
T
R
V
OUT  
rise time  
C
R
= 1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
V
IN  
= 3.6 V  
ms  
C
R
= 0.1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
T
OFF  
Turn off time  
C
R
= 1 mF,  
= 500 W  
LOAD  
LOAD  
40  
(Note 7)  
C
R
= 0.1 mF,  
= 500 W  
LOAD  
LOAD  
(Note 7)  
T
FALL  
V
OUT  
fall time  
C
R
= 1 mF,  
= 500 W  
LOAD  
LOAD  
300  
(Note 7)  
7. Parameters are guaranteed for C  
and R  
connected to the OUT pin with respect to the ground.  
LOAD  
LOAD  
8. Guaranteed by design and characterization.  
TIMINGS  
V
IN  
EN  
V
OUT  
T
ON  
T
T
OFF  
T
F
R
Figure 3. Enable, Rise and Fall Time  
www.onsemi.com  
5
 
NCP338  
TYPICAL CHARACTERISTICS  
Figure 4. RDS(on) (mW) vs. Vin (V) in  
Figure 5. RDS(on) (mW) vs. Iload at  
Temperature  
Different Input Voltage  
Figure 6. Standby Current (mA) vs. Vin  
Figure 7. Quiescent Current (mA) vs. Vin  
(V)  
(V)  
www.onsemi.com  
6
NCP338  
FUNCTIONAL DESCRIPTION  
Overview  
The auto−discharge is activated when EN pin is set to low  
level (disable state).  
The discharge path ( Pull down NMOS) stays activated as  
The NCP338 is a high side P channel MOSFET power  
distribution switch designed to isolate ICs connected on the  
battery in order to save energy. The part can be turned on,  
with a wide range of battery from 1.0 V to 3.6 V.  
long as EN pin is set at low level and V > 1.0 V.  
IN  
In order to limit the current across the internal discharge  
N−MOSFET, the typical value is set at 65 W.  
Enable Input  
Enable pin is an active high. The path is opened when EN  
pin is tied low (disable), forcing P−MOS switch off.  
The IN/OUT path is activated with a minimum of Vin of  
1.2 V and EN forced to high level.  
CIN and COUT Capacitors  
IN and OUT, 1 mF, at least, capacitors must be placed as  
close as possible the part to for stability improvement.  
Auto Discharge  
N−MOSFET is placed between the output pin and GND,  
in order to discharge the application capacitor connected on  
OUT pin.  
APPLICATION INFORMATION  
Power Dissipation  
TJ + PD   RqJA ) TA  
Main contributor in term of junction temperature is the  
power dissipation of the power MOSFET. Assuming this,  
the power dissipation and the junction temperature in  
normal mode can be calculated with the following  
equations:  
T
= Junction temperature (°C)  
= Package thermal resistance (°C/W)  
= Ambient temperature (°C)  
J
R
T
qJA  
A
PCB Recommendations  
Ǔ2  
The NCP338 integrates an up to 2 A rated PMOS FET, and  
the PCB design rules must be respected to properly evacuate  
the heat out of the silicon. By increasing PCB area,  
ǒ
PD + RDS(on)   IOUT  
P
D
= Power dissipation (W)  
especially around IN and OUT pins, the R  
can be decreased, allowing higher power dissipation.  
of the package  
R
I
= Power MOSFET on resistance (W)  
= Output current (A)  
qJA  
DS(on)  
OUT  
ORDERING INFORMATION  
Device  
Marking  
Autodischarge  
Package  
Shipping  
NCP338FCCT2G  
AM  
Yes  
WLCSP 0.8 x 1.2 mm  
(Pb−Free)  
3000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
7
NCP338  
PACKAGE DIMENSIONS  
WLCSP6, 0.80x1.20  
CASE 567FY  
ISSUE A  
D
A
NOTES:  
B
E
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. COPLANARITY APPLIES TO SPHERICAL  
CROWNS OF SOLDER BALLS.  
PIN A1  
REFERENCE  
MILLIMETERS  
2X  
0.05  
0.05  
C
DIM  
A
A1  
A2  
A3  
b
MIN  
−−−  
0.17  
0.28 REF  
0.04 REF  
0.21 0.25  
MAX  
0.60  
0.23  
A3  
DIE COAT  
2X  
C
TOP VIEW  
D
E
e
0.80 BSC  
1.20 BSC  
0.40 BSC  
A2  
A2  
DETAIL A  
0.05  
C
DETAIL A  
RECOMMENDED  
SOLDERING FOOTPRINT*  
A
0.05  
C
PACKAGE  
OUTLINE  
SEATING  
PLANE  
0.40  
PITCH  
NOTE 3  
C
A1  
SIDE VIEW  
6X  
b
e
e
0.05  
0.03  
C
C
A B  
C
6X  
A1  
0.229  
B
A
0.40  
PITCH  
DIMENSIONS: MILLIMETERS  
1
2
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
BOTTOM VIEW  
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NCP338/D  

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