MPSW92RLRA [ONSEMI]

500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN;
MPSW92RLRA
型号: MPSW92RLRA
厂家: ONSEMI    ONSEMI
描述:

500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN

晶体 小信号双极晶体管 高压 放大器
文件: 总4页 (文件大小:87K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Order this document  
by MPSW92/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
Motorola Preferred Device  
COLLECTOR  
3
2
BASE  
1
EMITTER  
1
2
3
CASE 29–10, STYLE 1  
TO–92 (TO–226AE)  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
Unit  
V
CEO  
V
CBO  
V
EBO  
–300  
–300  
–5.0  
Vdc  
Vdc  
Vdc  
Collector Current — Continuous  
I
C
–500  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watt  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
2.5  
20  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
(I = –1.0 mAdc, I = 0)  
V
–300  
–300  
–5.0  
Vdc  
Vdc  
(BR)CEO  
V
(BR)CBO  
C
B
Collector–Base Breakdown Voltage  
(I = –100 µAdc, I = 0)  
C
E
Emitter–Base Breakdown Voltage  
(I = –100 µAdc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = –200 Vdc, I = 0)  
I
–0.25  
–0.1  
µAdc  
µAdc  
CBO  
CB  
Emitter Cutoff Current  
(V = –3.0 Vdc, I = 0)  
E
I
EBO  
EB  
C
1. Pulse Test: Pulse Width  
300 s, Duty Cycle  
2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1998  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
(1)  
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = –1.0 mAdc, V  
= –10 Vdc)  
= –10 Vdc)  
= –10 Vdc)  
25  
40  
25  
C
CE  
CE  
CE  
(I = –10 mAdc, V  
C
(I = –30 mAdc, V  
C
Collector–Emitter Saturation Voltage  
(I = –20 mAdc, I = –2.0 mAdc)  
V
V
–0.5  
Vdc  
Vdc  
CE(sat)  
C
B
Base–Emitter Saturation Voltage  
(I = –20 mAdc, I = –2.0 mAdc)  
–0.9  
BE(sat)  
C
B
SMALL–SIGNAL CHARACTERISTICS  
Current–Gain — Bandwidth Product  
f
50  
MHz  
pF  
T
(I = –10 mAdc, V  
= –20 Vdc, f = 20 MHz)  
C
CE  
Collector–Base Capacitance  
(V = –20 Vdc, I = 0, f = 1.0 MHz)  
C
6.0  
cb  
CB  
E
1. Pulse Test: Pulse Width  
300 s, Duty Cycle  
2.0%.  
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
300  
250  
V
= 10 Vdc  
CE  
T
= +125°C  
J
200  
150  
100  
25°C  
–55°C  
50  
0
0.1  
1.0  
10  
100  
I
, COLLECTOR CURRENT (mA)  
C
Figure 1. DC Current Gain  
100  
10  
150  
130  
C
@ 1MHz  
ib  
110  
90  
C
cb  
@ 1MHz  
70  
50  
30  
1.0  
0.1  
T
= 25°C  
= 20 Vdc  
J
V
CE  
F = 20 MHz  
10  
0.1  
1.0  
10  
, REVERSE VOLTAGE (VOLTS)  
100  
1000  
11  
I , COLLECTOR CURRENT (mA)  
C
13  
15  
17  
19  
21  
1
3
5
7
9
V
R
Figure 2. Capacitance  
Figure 3. Current–Gain — Bandwidth  
1.4  
1.2  
1.0  
V
@ 25  
°
C, I /I = 10  
CE(sat)  
CE(sat)  
CE(sat)  
BE(sat)  
C B  
V
V
V
@ 125  
@ –55  
°C, I /I = 10  
C B  
°
C, I /I = 10  
C B  
@ 25  
°
C, I /I = 10  
C B  
C, I /I = 10  
C B  
0.8  
0.6  
V
@ 125  
@ –55  
°
BE(sat)  
BE(sat)  
V
°
C, I /I = 10  
C B  
V
V
V
@ 25  
°
C, V  
= 10 V  
BE(on)  
BE(on)  
BE(on)  
CE  
C, V  
0.4  
0.2  
0.0  
@ 125  
@ –55  
°
°
= 10 V  
= 10 V  
CE  
C, V  
CE  
0.1  
1.0  
10  
100  
I
, COLLECTOR CURRENT (mA)  
C
Figure 4. ”ON” Voltages  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
3
PACKAGE DIMENSIONS  
A
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
4. DIMENSION F APPLIES BETWEEN P AND L.  
DIMENSIONS D AND J APPLY BETWEEN L AND K  
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED  
IN P AND BEYOND DIMENSION K MINIMUM.  
B
K
R
SEATING  
PLANE  
P
L
F
INCHES  
MIN  
MILLIMETERS  
DIM  
A
B
C
D
F
G
H
J
K
L
N
P
MAX  
0.205  
0.310  
0.165  
0.021  
0.019  
0.055  
0.105  
0.024  
–––  
MIN  
4.44  
7.37  
3.18  
0.457  
0.407  
1.15  
2.42  
0.46  
12.70  
6.35  
2.04  
–––  
MAX  
5.21  
7.87  
4.19  
0.533  
0.482  
1.39  
2.66  
0.61  
–––  
0.175  
0.290  
0.125  
0.018  
0.016  
0.045  
0.095  
0.018  
0.500  
0.250  
0.080  
–––  
X X  
D
G
H
R
J
–––  
–––  
SECTION X–X  
0.105  
0.100  
–––  
2.66  
2.54  
–––  
C
1
2
3
N
R
0.135  
3.43  
N
STYLE 1:  
PIN 1. EMITTER  
CASE 029–10  
2. BASE  
3. COLLECTOR  
(TO–226AE)  
ISSUE AJ  
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and  
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola  
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,includingTypicals”  
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of  
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury  
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola  
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that  
Motorola was negligent regarding the design or manufacture of the part. Motorola and  
Opportunity/Affirmative Action Employer.  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal  
Mfax is a trademark of Motorola, Inc.  
How to reach us:  
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;  
JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141,  
P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan. 81–3–5487–8488  
Customer Focus Center: 1–800–521–6274  
Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 1–602–244–6609  
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,  
Motorola Fax Back System  
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298  
– http://sps.motorola.com/mfax/  
HOME PAGE: http://motorola.com/sps/  
MPSW92/D  

相关型号:

MPSW92RLRAG

One Watt High Voltage Transistor
ONSEMI

MPSW92RLRAG

500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN
ROCHESTER

MPSW92RLRE

暂无描述
MOTOROLA

MPSW92RLRE

500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN
ONSEMI

MPSW92RLREG

One Watt High Voltage Transistor
ONSEMI

MPSW92RLRF

500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MOTOROLA

MPSW92RLRM

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MOTOROLA

MPSW92RLRP

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MOTOROLA

MPSW92ZL1

500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN
ONSEMI

MPSW92ZL1

500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MOTOROLA

MPSW92_10

One Watt High Voltage Transistor
ONSEMI

MPT

Metallized Polyester Film Capacitor (Tubular)
DBLECTRO