MPSW92RLRAG [ROCHESTER]
500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN;
| 型号： | MPSW92RLRAG |
| 厂家： | 
Rochester Electronics |
| 描述： | 500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN 晶体管 |
| 文件： | 总4页 (文件大小：809K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
MPSW92
ON Semiconductor Preferred Device
One Watt High Voltage
Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Value
–300
–300
–5.0
Unit
Vdc
V
CEO
V
CBO
V
EBO
1
2
3
Vdc
Vdc
CASE 29–10, STYLE 1
TO–92 (TO–226AE)
Collector Current — Continuous
I
C
–500
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.0
8.0
Watt
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
2.5
20
Watts
mW/°C
C
D
COLLECTOR
3
Operating and Storage Junction
Temperature Range
T , T
J
–55 to +150
°C
stg
2
THERMAL CHARACTERISTICS
Characteristic
BASE
Symbol
Max
125
50
Unit
°C/W
°C/W
1
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
q
JA
JC
EMITTER
R
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
V
V
V
–300
–300
–5.0
—
—
—
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = –1.0 mAdc, I = 0)
C
B
Collector–Base Breakdown Voltage
(I = –100 µAdc, I = 0)
C
E
Emitter–Base Breakdown Voltage
(I = –100 µAdc, I = 0)
—
Vdc
E
C
Collector Cutoff Current
(V = –200 Vdc, I = 0)
I
–0.25
–0.1
µAdc
µAdc
CBO
CB
E
Emitter Cutoff Current
(V = –3.0 Vdc, I = 0)
I
—
EBO
EB
C
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
926
Publication Order Number:
March, 2001 – Rev. 2
MPSW92/D
MPSW92
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
ON CHARACTERISTICS(1)
DC Current Gain
Symbol
Min
Max
Unit
h
FE
—
(I = –1.0 mAdc, V = –10 Vdc)
25
40
25
—
—
—
C
CE
(I = –10 mAdc, V = –10 Vdc)
C
CE
(I = –30 mAdc, V = –10 Vdc)
C
CE
Collector–Emitter Saturation Voltage
(I = –20 mAdc, I = –2.0 mAdc)
V
V
—
–0.5
Vdc
Vdc
CE(sat)
C
B
Base–Emitter Saturation Voltage
(I = –20 mAdc, I = –2.0 mAdc)
—
–0.9
BE(sat)
C
B
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
50
—
—
MHz
pF
T
(I = –10 mAdc, V = –20 Vdc, f = 20 MHz)
C
CE
Collector–Base Capacitance
(V = –20 Vdc, I = 0, f = 1.0 MHz)
C
6.0
cb
CB
E
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
http://onsemi.com
927
MPSW92
300
250
V
CE
= 10 Vdc
T = +125°C
J
200
150
25°C
-55°C
100
50
0
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
100
150
130
C
ib
@ 1MHz
110
90
10
C
cb
@ 1MHz
70
50
30
1.0
0.1
T = 25°C
J
V
CE
= 20 Vdc
F = 20 MHz
10
0.1
1.0
10
100
1000
11
13
15
17
19
21
1
3
5
7
9
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 2. Capacitance
Figure 3. Current–Gain — Bandwidth
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
V
@ 25°C, I /I = 10
C B
CE(sat)
@ 125°C, I /I = 10
CE(sat)
CE(sat)
BE(sat)
C B
V
V
V
V
V
@ -55°C, I /I = 10
C B
@ 25°C, I /I = 10
C
B
@ 125°C, I /I = 10
BE(sat)
BE(sat)
BE(on)
C B
@ -55°C, I /I = 10
C
B
@ 25°C, V = 10 V
CE
V
V
@ 125°C, V = 10 V
BE(on)
CE
@ -55°C, V = 10 V
BE(on)
CE
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 4. ”ON” Voltages
http://onsemi.com
928
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