MPSW56 [ONSEMI]
One Watt Amplifier Transistors(PNP Silicon); 一瓦的放大器晶体管（ PNP硅）
| 型号： | MPSW56 |
| 厂家： | 
ONSEMI |
| 描述： | One Watt Amplifier Transistors(PNP Silicon) |
| 文件： | 总4页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MPSW55/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
3
*Motorola Preferred Device
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
2
3
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol MPSW55 MPSW56
Unit
Vdc
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
V
CEO
V
CBO
V
EBO
–60
–60
–80
–80
Vdc
–4.0
Vdc
Collector Current — Continuous
I
C
–500
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.0
8.0
Watt
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
2.5
20
Watts
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
125
50
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
(I = –1.0 mAdc, I = 0)
V
Vdc
(BR)CEO
MPSW55
MPSW56
–60
–80
—
—
C
B
Emitter–Base Breakdown Voltage
(I = –100 Adc, I = 0)
V
–4.0
—
Vdc
(BR)EBO
E
C
Collector Cutoff Current
I
µAdc
CES
(V
CE
(V
CE
= –40 Vdc, I = 0)
MPSW55
MPSW56
—
—
–0.5
–0.5
B
= –60 Vdc, I = 0)
B
Collector Cutoff Current
I
µAdc
µAdc
CBO
(V
CB
(V
CB
= –40 Vdc, I = 0)
MPSW55
MPSW56
—
—
–0.1
–0.1
E
= –60 Vdc, I = 0)
E
Emitter Cutoff Current
(V = –3.0 Vdc, I = 0)
I
—
–0.1
EBO
EB
C
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Max
Unit
(1)
ON CHARACTERISTICS
DC Current Gain
h
—
FE
(I = –50 mAdc, V
= –1.0 Vdc)
= –1.0 Vdc)
100
50
—
—
C
CE
(I = –250 mAdc, V
C
CE
Collector–Emitter Saturation Voltage
(I = –250 mAdc, I = –10 mAdc)
V
—
–0.5
Vdc
Vdc
CE(sat)
C
B
Base–Emitter On Voltage
(I = –250 mAdc, V
V
BE(on)
—
–1.2
= –5.0 Vdc)
CE
C
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
50
—
—
MHz
pF
T
(I = –250 mAdc, V
C
= –5.0 Vdc, f = 20 MHz)
CE
Output Capacitance
C
15
obo
(V
CB
= –10 Vdc, f = 1.0 MHz)
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
400
T
= 125°C
J
V
= –1.0 V
CE
200
25°C
–55°C
100
80
60
40
–0.5 –0.7
–1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50
–70
–100
–200
–300
–500
I
, COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
–1.0
–0.8
–0.6
–0.4
–0.2
0
–1.0
T
= 25°C
T
= 25°C
J
J
–0.8
V
@ I /I = 10
C B
BE(sat)
–0.6
–0.4
–50
mA
V
@ V = –1.0 V
CE
I
= –10 mA
–100 mA
–250 mA –500 mA
BE(on)
C
–0.2
0
V
@ I /I = 10
C B
CE(sat)
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
–50
–0.5 –1.0 –2.0
–5.0
I , COLLECTOR CURRENT (mA)
C
–10
–20
–50 –100 –200
–500
I
, BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
Figure 3. “On” Voltages
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
100
70
–0.8
–1.2
T
= 25°C
J
C
ibo
50
–1.6
–2.0
30
20
θ
for V
BE
VB
10
C
obo
–2.4
–2.8
7.0
5.0
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10
–20
–50 –100
–0.5 –1.0 –2.0
–5.0 –10
–20
–50 –100 –200
–500
I
, COLLECTOR CURRENT (mA)
V , REVERSE VOLTAGE (VOLTS)
R
C
Figure 4. Base–Emitter Temperature Coefficient
Figure 5. Capacitance
200
V
= –2.0 V
CE
= 25°C
DUTY CYCLE
≤ 10%
T
J
–2 k
–1 k
1.0 ms
100
100
70
µs
–500
1.0 s
T
= 25°C
dc
A
–200
–100
–50
T
= 25°C
50
dc
C
CURRENT LIMIT
THERMAL LIMIT
30
20
SECOND BREAKDOWN LIMIT
MPSW55
–20
–10
–1.0
MPSW56
–2.0 –3.0 –5.0 –7.0 –10
–20 –30
–50 –70 –100
–200
–2.0
–5.0
–10
–20
–60 –80 –100
I
, COLLECTOR CURRENT (mA)
C
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 6. Current–Gain — Bandwidth Product
Figure 7. Active Region — Safe Operating
Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
K
R
SEATING
PLANE
P
L
F
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.310
0.165
0.022
0.019
0.055
0.105
0.024
–––
MIN
4.44
7.37
3.18
0.46
0.41
1.15
2.42
0.46
12.70
6.35
2.04
–––
MAX
5.21
7.87
4.19
0.56
0.48
1.39
2.66
0.61
–––
0.175
0.290
0.125
0.018
0.016
0.045
0.095
0.018
0.500
0.250
0.080
–––
X X
D
G
H
V
J
–––
–––
SECTION X–X
0.105
0.100
–––
2.66
2.54
–––
C
1
2
3
N
R
V
0.135
0.135
3.43
3.43
N
–––
–––
STYLE 1:
PIN 1. EMITTER
CASE 029–05
2. BASE
3. COLLECTOR
(TO–226AE)
ISSUE AD
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecificallydisclaimsanyandallliability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MPSW55/D
◊
相关型号：
MPSW56RLRAG
500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN
ROCHESTER
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