MPSW56RLRAG [ROCHESTER]
500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN;
| 型号： | MPSW56RLRAG |
| 厂家： | 
Rochester Electronics |
| 描述： | 500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN 放大器 晶体管 |
| 文件： | 总4页 (文件大小：828K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
One Watt Amplifier Transistors
PNP Silicon
MPSW55
MPSW56
MPSW56 is a Preferred Device
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
MPSW55 MPSW56
Unit
Vdc
V
CEO
V
CBO
V
EBO
–60
–60
–80
–80
Vdc
–4.0
Vdc
Collector Current — Continuous
I
–500
mAdc
C
1
2
3
Total Device Dissipation @ T = 25°C
P
1.0
8.0
Watt
mW/°C
A
D
Derate above 25°C
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
2.5
20
Watts
mW/°C
CASE 29–10, STYLE 1
TO–92 (TO–226AE)
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
COLLECTOR
3
Symbol
Max
125
50
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
q
JA
JC
2
R
q
BASE
1
EMITTER
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
V
Vdc
(BR)CEO
(I = –1.0 mAdc, I = 0)
MPSW55
MPSW56
–60
–80
—
—
C
B
Emitter–Base Breakdown Voltage
(I = –100 mAdc, I = 0)
V
–4.0
—
Vdc
(BR)EBO
E
C
Collector Cutoff Current
(V = –40 Vdc, I = 0)
I
µAdc
CES
MPSW55
MPSW56
—
—
–0.5
–0.5
CE
B
(V = –60 Vdc, I = 0)
CE
B
Collector Cutoff Current
(V = –40 Vdc, I = 0)
I
µAdc
µAdc
CBO
MPSW55
MPSW56
—
—
–0.1
–0.1
CB
E
(V = –60 Vdc, I = 0)
CB
E
Emitter Cutoff Current
(V = –3.0 Vdc, I = 0)
I
—
–0.1
EBO
EB
C
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
920
Publication Order Number:
March, 2001 – Rev. 1
MPSW55/D
MPSW55 MPSW56
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
h
FE
—
(I = –50 mAdc, V = –1.0 Vdc)
100
50
—
—
C
CE
(I = –250 mAdc, V = –1.0 Vdc)
C
CE
Collector–Emitter Saturation Voltage
(I = –250 mAdc, I = –10 mAdc)
V
—
–0.5
Vdc
Vdc
CE(sat)
C
B
Base–Emitter On Voltage
(I = –250 mAdc, V = –5.0 Vdc)
V
BE(on)
—
–1.2
C
CE
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
50
—
—
MHz
pF
T
(I = –250 mAdc, V = –5.0 Vdc, f = 20 MHz)
C
CE
Output Capacitance
C
15
obo
(V = –10 Vdc, f = 1.0 MHz)
CB
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
400
T = 125°C
J
V
CE
= -1.0 V
200
25°C
-55°C
100
80
60
40
-0.5 -0.7 -1.0
-2.0
-3.0
-5.0 -7.0
I , COLLECTOR CURRENT (mA)
-10
-20
-30
-50 -70 -100
-200 -300
-500
C
Figure 1. DC Current Gain
-1.0
-1.0
T = 25°C
J
T = 25°C
J
-0.8
-0.8
-0.6
-0.4
-0.2
0
V
@ I /I = 10
BE(sat)
C
B
-0.6
-0.4
-50
mA
V
@ V = -1.0 V
I
= -10 mA
BE(on)
CE
-100 mA
-250 mA -500 mA
C
-0.2
0
V
@ I /I = 10
C B
CE(sat)
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
-500
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 2. Collector Saturation Region
Figure 3. “On” Voltages
http://onsemi.com
921
MPSW55 MPSW56
100
70
-0.8
-1.2
T = 25°C
J
C
ibo
50
-1.6
-2.0
30
20
θ
for V
BE
VB
10
C
obo
-2.4
-2.8
7.0
5.0
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200 -500
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Base–Emitter Temperature Coefficient
Figure 5. Capacitance
200
V
CE
= -2.0 V
DUTY CYCLE ≤ 10%
T = 25°C
J
-2 k
1.0 ms
100 µs
100
70
-1 k
-500
1.0 s
T = 25°C
dc
A
-200
-100
-50
T
= 25°C
50
dc
C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSW55
30
20
-20
-10
MPSW56
-2.0 -3.0 -5.0 -7.0 -10
-20 -30 -50 -70 -100
-200
-1.0
-2.0
-5.0
-10
-20
-60 -80 -100
I , COLLECTOR CURRENT (mA)
C
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Current–Gain — Bandwidth Product
Figure 7. Active Region — Safe Operating
Area
http://onsemi.com
922
相关型号：
©2020 ICPDF网 联系我们和版权申明