MPSW55RLRAG [ONSEMI]
One Watt Amplifier Transistors; 一瓦放大器晶体管
| 型号： | MPSW55RLRAG |
| 厂家： | 
ONSEMI |
| 描述： | One Watt Amplifier Transistors |
| 文件： | 总4页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MPSW55, MPSW56
One Watt Amplifier
Transistors
PNP Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available*
COLLECTOR
3
2
MAXIMUM RATINGS
BASE
Rating
Symbol
Value
Unit
1
EMITTER
Collector−Emitter Voltage
MPSW55
MPSW56
V
CEO
V
CBO
V
EBO
−60
−80
Vdc
Collector−Base Voltage
MPSW55
MPSW56
−60
−80
Vdc
Emitter−Base Voltage
−4.0
Vdc
Collector Current − Continuous
I
−500
mAdc
TO−92 1 WATT
(TO−226)
CASE 29−10
STYLE 1
C
Total Device Dissipation @ T = 25°C
P
1.0
8.0
W
mW/°C
A
D
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
Derate above 25°C
1
2
3
Total Device Dissipation @ T = 25°C
P
2.5
20
W
mW/°C
C
D
STRAIGHT LEAD
BULK PACK
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
MPS
W5x
Symbol
Max
125
50
Unit
°C/W
°C/W
AYWWG
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
q
JA
G
R
q
JC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
x
A
Y
= 5 or 6
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
MPSW55G
TO−92
(Pb−Free)
5000 Units/Bulk
MPSW55RLRAG
TO−92
(Pb−Free)
2000/Tape & Reel
MPSW56RLRP
TO−92
2000/Ammo Pack
2000/Ammo Pack
MPSW56RLRPG
TO−92
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
August, 2010 − Rev. 4
MPSW55/D
MPSW55, MPSW56
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
V
Vdc
(BR)CEO
(I = −1.0 mAdc, I = 0)
MPSW55
MPSW56
−60
−80
−
−
C
B
Emitter−Base Breakdown Voltage
(I = −100 mAdc, I = 0)
V
Vdc
(BR)EBO
−4.0
−
E
C
Collector Cutoff Current
(V = −40 Vdc, I = 0)
I
mAdc
CES
MPSW55
MPSW56
−
−
−0.5
−0.5
CE
B
(V = −60 Vdc, I = 0)
CE
B
Collector Cutoff Current
(V = −40 Vdc, I = 0)
I
mAdc
mAdc
CBO
MPSW55
MPSW56
−
−
−0.1
−0.1
CB
E
(V = −60 Vdc, I = 0)
CB
E
Emitter Cutoff Current
I
EBO
(V = −3.0 Vdc, I = 0)
−
−0.1
EB
C
(1)
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = −50 mAdc, V = −1.0 Vdc)
100
50
−
−
C
CE
(I = −250 mAdc, V = −1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = −250 mAdc, I = −10 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−0.5
−1.2
C
B
Base−Emitter On Voltage
(I = −250 mAdc, V = −5.0 Vdc)
V
BE(on)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
f
MHz
pF
T
(I = −250 mAdc, V = −5.0 Vdc, f = 20 MHz)
50
−
C
CE
Output Capacitance
C
obo
(V = −10 Vdc, f = 1.0 MHz)
−
15
CB
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
400
T = 125°C
J
V
CE
= -1.0 V
200
25°C
-55°C
100
80
60
40
-0.5 -0.7 -1.0
-2.0
-3.0
-5.0 -7.0
I , COLLECTOR CURRENT (mA)
-10
-20
-30
-50 -70 -100
-200 -300
-500
C
Figure 1. DC Current Gain
http://onsemi.com
2
MPSW55, MPSW56
-1.0
-0.8
-0.6
-0.4
-0.2
0
-1.0
T = 25°C
T = 25°C
J
J
-0.8
V
@ I /I = 10
B
BE(sat)
C
-0.6
-0.4
-50
mA
V
@ V = -1.0 V
CE
I
C
= -10 mA
BE(on)
-100 mA
-250 mA -500 mA
-0.2
0
V
@ I /I = 10
C B
CE(sat)
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
-500
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 2. Collector Saturation Region
Figure 3. “On” Voltages
100
70
-0.8
-1.2
T = 25°C
J
C
ibo
50
-1.6
-2.0
30
20
q
for V
BE
VB
10
C
obo
-2.4
-2.8
7.0
5.0
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200 -500
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Base−Emitter Temperature Coefficient
Figure 5. Capacitance
200
V
= -2.0 V
CE
T = 25°C
DUTY CYCLE ≤ 10%
J
-2 k
1.0 ms
100 ms
100
70
-1 k
-500
1.0 s
T = 25°C
dc
A
-200
-100
-50
T
= 25°C
50
dc
C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSW55
30
20
-20
-10
MPSW56
-2.0 -3.0 -5.0 -7.0 -10
-20 -30 -50 -70 -100
-200
-1.0
-2.0
-5.0
-10
-20
-60 -80 -100
I , COLLECTOR CURRENT (mA)
C
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Current−Gain — Bandwidth Product
Figure 7. Active Region — Safe Operating
Area
http://onsemi.com
3
MPSW55, MPSW56
PACKAGE DIMENSIONS
TO−92 (TO−226) 1 WATT
CASE 29−10
ISSUE O
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
STRAIGHT LEAD
BULK PACK
B
R
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN DI
MENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
P
L
F
K
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.44
7.37
3.18
0.46
0.41
1.15
2.42
0.46
12.70
6.35
2.04
---
MAX
5.21
7.87
4.19
0.53
0.48
1.39
2.66
0.61
---
A
B
C
D
F
0.175
0.290
0.125
0.018
0.016
0.045
0.095
0.018
0.500
0.250
0.080
---
0.205
0.310
0.165
0.021
0.019
0.055
0.105
0.024
---
D
X X
G
J
H
V
G
H
J
C
K
L
SECTION X−X
---
---
1
N
N
P
R
V
0.105
0.100
---
2.66
2.54
---
STYLE 1:
PIN 1. EMITTER
2. BASE
N
0.135
0.135
3.43
3.43
---
---
3. COLLECTOR
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
BENT LEAD
TAPE & REEL
AMMO PACK
R
B
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN
DIMENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
P
T
SEATING
PLANE
K
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.44
7.37
3.18
0.46
2.40
0.46
12.70
2.04
---
MAX
5.21
7.87
4.19
0.53
2.80
0.61
---
A
B
C
D
G
J
0.175
0.290
0.125
0.018
0.094
0.018
0.500
0.080
---
0.205
0.310
0.165
0.021
0.102
0.024
---
D
X X
G
J
K
N
P
R
V
V
C
0.105
0.100
---
2.66
2.54
---
SECTION X−X
0.135
0.135
3.43
3.43
1
N
---
---
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MPSW55/D
相关型号：
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