MPSW56 [FAIRCHILD]
PNP General Purpose Amplifier; PNP通用放大器![MPSW56](http://pdffile.icpdf.com/pdf1/p00038/img/icpdf/MPSW56_199892_icpdf.jpg)
型号: | MPSW56 |
厂家: | ![]() |
描述: | PNP General Purpose Amplifier |
文件: | 总9页 (文件大小:382K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MPSW56
TO-226
C
B
E
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 800 mA.
Sourced from Process 79.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
80
80
V
V
Collector-Base Voltage
Emitter-Base Voltage
4.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.0
A
-55 to +150
°C
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSW56
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
1.0
8.0
50
W
mW/°C
°C/W
RθJC
RθJA
Thermal Resistance, Junction to Ambient
125
°C/W
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
MPSW56, Rev
A
2000 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V (B R )C E O
C ollector-Em itter B reakdown
IC = 1.0 m A , IB = 0
80
V
V oltage
V (B R )C B O
V (B R )E B O
IC B O
C ollector-Base B reakdown V oltage
80
V
IC = 100 µA , IE = 0
IE = 1.0 m A , IC = 0
V C B = 60 V , IE = 0
V C E = 60 V
E m itter-B ase B reakdown V oltage
C ollector-Cutoff C urrent
C ollector-Cutoff C urrent
E m itter-C utoff C urrent
4.0
V
0.1
0.5
µA
µA
µA
IC E O
IE B O
V E B = 3.0 V , IC = 0
0.10
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 50 mA, VCE = 1.0 V
IC = 250 mA, VCE = 1.0 V
100
50
Collector-Emitter Saturation Voltage IC = 250 mA, IB = 10 mA
0.5
1.2
V
V
VCE(sat)
VBE(on)
Base-Emitter On Voltage
IC = 250 mA, VCE = 5.0 V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
IC = 250 mA, VCE = 5.0 V,
f = 20 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
50
MHz
pF
Collector-Base Capacitance
15
Cob
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
2
1
200
= 10
β
VCE = 1.0 V
125 °C
150
100
50
25 °C
- 40 ºC
0.1
25 °C
125 ºC
- 40 °C
0.01
0
10
100
I C - COLLECTOR CURRENT (mA)
1000
0.01
0.02
0.05
0.1
0.5
1
IC - COLLECTOR CURRENT (mA)
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
= 10
β
1
0.8
0.6
0.4
- 40 ºC
- 40 ºC
25 °C
25 °C
125 ºC
125 ºC
V CE = 5V
1
10
100
1000
1
10
100
1000
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Base Capacitance
vs Collector-Base Voltage
Collector-Cutoff Current
vs. Ambient Temperature
40
30
20
10
0
100
10
f = 1.0 MHz
VCB = 60V
1
0.1
0.01
25
50
75
100
125
0
4
8
12
16
20
24
28
º
TA- AMBIENT TEMPERATURE ( C)
V
- COLLECTOR-BASE VOLTAGE (V)
CB
Gain Bandwidth Product
vs Collector Current
Safe Operating Area TO-226
10
250
200
150
100
50
VCE = 10V
1
0.1
*PULSED
OPERATION
T
= 25 °C
A
LIMIT DETERMINED
BY BV
CEO
0
0.01
1
10
100
1000
1
10
100
IC - COLLECTOR CURRENT (mA)
V CE - COLLECTOR-EMITTER VOLTAGE (V)
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
1
0.75
0.5
TO-226
SOT-223
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
TO-226AE Tape and Reel Data and Package Dimensions
TO-226AE Packaging
Configuration: Figur e 1.0
TAPE and REELOPTION
FSCINT Label sampl e
See Fig 2.0 for various
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
Reeling Styles
LOT:
QTY:
CBVK741B019
10000
NSID:
D/C1:
SPEC:
PN2222N
FSCINT
Label
SPEC REV:
QA REV:
D9842
B2
5 Reels per
Intermediate Box
(FSCINT)
Customized
Label
F63TNR Label sample
F63TNR
Label
LOT: CBVK741B019
QTY: 2000
SPEC:
FSID: PN222N
Customized
Label
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
375mm x 267mm x 375mm
Intermediate Box
AMMO PACK OPTION
See Fig 3.0 for2 Ammo
Pack Options
TO-226AE TNR/AMMO PACKING INFORMATION
Packing
Reel
Style
A
Quantity
2,000
2,000
2,000
2,000
EOL code
D26Z
E
D27Z
FSCINT
Label
Ammo
M
D74Z
P
D75Z
5 Ammo box es per
Intermediate Box
327mm x 158mm x 135mm
Immediate Box
Unit weight
Reel weight with components
Ammo weight with components
Max quantity per intermediate box = 10,000 units
= 0.300gm
=
0.868 kg
0.880 kg
Customized
Label
=
F63TNR
Barcode Label
Customized
Label
333mm x 231mm x 183mm
Intermediate Box
BULK OPTION
See Bulk Packing
Information table
Anti-static
Bubble Sheets
FSCINT Barcode Label
(TO-226AE) BULK PACKING INFORMATION
LEADCLIP
DIMENSION
EOL CODE
J18Z
DESCRIPTION
TO-18 OPTION STD
TO-5 OPTION STD
QUANTITY
1.0 K / BOX
1.0 K / BOX
1.5 K / BOX
NO LEAD CLIP
1,500 units per
EO70 box for
std option
114mm x 102mm x 51mm
EO70 Immediate Box
J05Z
NO LEAD CLIP
NO LEADCLIP
NO EOL
CODE
TO-226 STANDARD
STRAIGHT
5 EO70 boxes per
Intermediate Box
Customized
Label
530mm x 130mm x 83mm
Intermediate box
FSCINT Label
7,500 units maximum
per intermediate box
for std option
October 1999, Rev. A1
TO-226AE Tape and Reel Data and Package Dimensions, continued
TO-226AE ReelingStyle
Configuration: Figure 2.0
Machine Option“A” (H)
Machine Option“E” (J)
Style “A”, D26Z, D70Z (s/h)
Style “E”, D27Z, D71Z (s/h)
TO-226AE Radial Ammo Packaging
Configuration: Figure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS EMITTER
FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
October 1999, Rev. A1
TO-226AE Tape and Reel Data and Package Dimensions, continued
TO-226AE TapeandReel Taping
Dimension Configuration:
Figur e 4.0
Hd
P
Pd
b
Hb
W1
d
S
L
H1
HO
L1
WO
t
W2
W
t1
P1 F1
P2
DO
ITEM DESCRIPTION
SYMBOL
DIMENSION
b
0.098 (max)
Base of Package to Lead Bend
Component Height
PO
Hb
1.078 (+/- 0.050)
User DirectionofFeed
HO
H1
Pd
Hd
P
0.630 (+/- 0.020)
0.748 (+/- 0.020)
0.040 (max)
Lead Clinch Height
Component Base Height
Component Alignment ( side/side )
Component Alignment ( front/back )
Component Pitch
0.031 (max)
0.500 (+/- 0.020)
0.500 (+/- 0.008)
0.150 (+0.009, -0.010)
0.247 (+/- 0.007)
0.104 (+/- 0 .010)
0.018 (+0.002, -0.003)
0.429 (max)
PO
P1
P2
F1/F2
d
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
L
Cut Lead Length
L1
t
0.209 (+0.051, -0.052)
0.032 (+/- 0.006)
0.021 (+/- 0.006)
0.708 (+0.020, -0.019)
0.236 (+/- 0.012)
0.035 (max)
Taped Lead Lengt h
Taped Lead Thic kness
Carrier Tape Thickness
Carrier Tape Width
t1
TO-226AE Reel
Configuration:
W
Figur e 5.0
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
WO
W1
W2
DO
S
0.360 (+/- 0.025)
0.157 (+0.008, -0.007)
0.004 (max)
Sprocket Hole Diameter
Lead Spring Out
Note : All dimensions are in inches.
ELECTROSTATIC
SENSITIVE DEVICES
D4
D1
ITEM DESCRIPTION
SYMBOL MINIMUM
MAXIMUM
D2
Reel Diameter
D1
D2
D2
D3
D4
W1
W2
W3
13.975
1.160
0.650
3.100
2.700
0.370
1.630
14.025
1.200
0.700
3.300
3.100
0.570
1.690
2.090
F63TNR Label
Arbor Hole Diameter (Standard)
(Small Hole)
Customized Label
Core Diameter
Hub Recess Inner Diameter
Hub Recess Depth
Flange to Flange Inner Width
Hub to Hub Center Width
W1
W3
W2
Note: All dimensions are inches
D3
October 1999, Rev. A1
TO-226AE Tape and Reel Data and Package Dimensions, continued
TO-226AE (FS PKG Code 95, 99)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.300
S4.70–4.32;
S1.52–1.02;
2° TYP
S7.73–7.10;
S7.87–7.37;
2° TYP
S1.65–1.27;
0.51
S0.76–
0.36;
S15.61–14.47;
S0.51–0.36;
S0.48–0.30;
S1.40–1.14;
S1.40–1.14;
99 95
S4.45–3.81;
1
2
3
E
B
C
E
C
B
5° TYP
1
2
3
TO-226AE (95,99)
For leadformed option ordering,
refer to Tape & Reel data information.
S2.41–2.13;
October 1999, Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
SyncFET™
TinyLogic™
UHC™
CROSSVOLT™
E2CMOSTM
VCX™
FACT™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
相关型号:
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MPSW56RLRAG
500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN
ROCHESTER
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