MMUN2217L_16 [ONSEMI]

Digital Transistors (BRT);
MMUN2217L_16
型号: MMUN2217L_16
厂家: ONSEMI    ONSEMI
描述:

Digital Transistors (BRT)

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MMUN2217L,  
NSVMMUN2217L  
Digital Transistors (BRT)  
R1 = 4.7 kW, R2 = 10 kW  
NPN Transistors with Monolithic Bias  
Resistor Network  
www.onsemi.com  
PIN CONNECTIONS  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base−emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
PIN 3  
COLLECTOR  
(OUTPUT)  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
MARKING DIAGRAM  
SOT−23  
CASE 318  
STYLE 6  
AAM MG  
G
1
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
AAM  
M
Specific Device Code  
=
Date Code*  
G
=
Pb−Free Package  
MAXIMUM RATINGS (T = 25°C)  
A
(Note: Microdot may be in either location)  
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
*Date Code orientation may vary depending up-  
on manufacturing location.  
V
CBO  
CEO  
V
50  
Vdc  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
I
C
100  
20  
mAdc  
Vdc  
V
IN(fwd)  
Input Reverse Voltage  
V
IN(rev)  
7
Vdc  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
October, 2016 − Rev. 3  
DTC143X/D  
MMUN2217L, NSVMMUN2217L  
Table 1. ORDERING INFORMATION  
Device  
Part Marking  
Package  
Shipping  
MMUN2217LT1G  
AAM  
SC−23  
(Pb−Free)  
3000 / Tape & Reel  
3000 / Tape & Reel  
NSVMMUN2217LT1G  
AAM  
SC−23  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
300  
250  
(1) SOT−23; Minimum Pad  
200  
(1)  
150  
100  
50  
0
−50 −25  
0
25  
50  
75  
100  
125 150  
AMBIENT TEMPERATURE (°C)  
Figure 1. Derating Curve  
Table 2. THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
THERMAL CHARACTERISTICS (SOT−23) (MMUN2217L)  
Total Device Dissipation  
P
D
T = 25°C  
A
(Note 1)  
(Note 2)  
(Note 1)  
(Note 2)  
246  
400  
2.0  
3.2  
mW  
Derate above 25°C  
mW/°C  
Thermal Resistance,  
Junction to Ambient  
(Note 1)  
(Note 2)  
R
508  
311  
°C/W  
°C/W  
°C  
q
JA  
Thermal Resistance,  
Junction to Lead  
(Note 1)  
(Note 2)  
R
174  
208  
q
JL  
Junction and Storage Temperature Range  
T , T  
J
−55 to +150  
stg  
1. FR−4 @ Minimum Pad.  
2. FR−4 @ 1.0 x 1.0 Inch Pad.  
www.onsemi.com  
2
 
MMUN2217L, NSVMMUN2217L  
Table 3. ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector−Base Cutoff Current  
I
I
nAdc  
nAdc  
mAdc  
Vdc  
CBO  
(V = 50 V, I = 0)  
100  
500  
0.5  
CB  
E
Collector−Emitter Cutoff Current  
(V = 50 V, I = 0)  
CEO  
CE  
B
Emitter−Base Cutoff Current  
(V = 6.0 V, I = 0)  
I
EBO  
EB  
C
Collector−Base Breakdown Voltage  
(I = 10 mA, I = 0)  
V
V
(BR)CBO  
(BR)CEO  
50  
50  
C
E
Collector−Emitter Breakdown Voltage (Note 3)  
(I = 2.0 mA, I = 0)  
Vdc  
C
B
ON CHARACTERISTICS  
DC Current Gain (Note 3)  
h
FE  
(I = 5.0 mA, V = 10 V)  
35  
60  
0.25  
0.3  
C
CE  
Collector *Emitter Saturation Voltage (Note 3)  
VCE(sat)  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
kW  
(I = 10 mA, I = 1.0 mA)  
C
B
Input Voltage (off)  
(V = 5.0 V, I = 100 mA)  
V
i(off)  
V
i(on)  
0.9  
2.0  
CE  
C
Input Voltage (on)  
(V = 0.3 V, I = 20 mA)  
2.5  
CE  
C
Output Voltage (on)  
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)  
V
OL  
0.2  
CC  
B
L
Output Voltage (off)  
V
OH  
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)  
4.9  
3.3  
CC  
B
L
Input Resistor  
Resistor Ratio  
R1  
R /R  
4.7  
6.1  
0.38  
0.47  
0.56  
1
2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.  
www.onsemi.com  
3
 
MMUN2217L, NSVMMUN2217L  
TYPICAL CHARACTERISTICS  
MMUN2217L  
1
1000  
I /I = 10  
C
B
V
CE  
= 10 V  
150°C  
−55°C  
25°C  
100  
10  
25°C  
0.1  
150°C  
−55°C  
0.01  
1
0
10  
20  
30  
40  
50  
0
1
10  
100  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 2. VCE(sat) vs. IC  
Figure 3. DC Current Gain  
3.6  
3.2  
2.8  
2.4  
2
100  
10  
1
f = 10 kHz  
= 0 A  
T = 25°C  
A
I
E
−55°C  
25°C  
1.6  
1.2  
0.8  
0.4  
0
0.1  
150°C  
V
= 5 V  
O
0.01  
0
10  
20  
30  
40  
50  
0
1
2
3
4
5
V , REVERSE VOLTAGE (V)  
R
V , INPUT VOLTAGE (V)  
in  
Figure 4. Output Capacitance  
Figure 5. Output Current vs. Input Voltage  
100  
10  
25°C  
−55°C  
1
150°C  
V
O
= 0.2 V  
0.1  
0
10  
20  
30  
40  
50  
I , COLLECTOR CURRENT (mA)  
C
Figure 6. Input Voltage vs. Output Current  
www.onsemi.com  
4
MMUN2217L, NSVMMUN2217L  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AR  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.  
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF  
THE BASE MATERIAL.  
0.25  
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
T
H
E
E
1
2
MILLIMETERS  
INCHES  
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.08  
2.80  
1.20  
1.78  
0.30  
0.35  
2.10  
0°  
NOM  
1.00  
0.06  
0.44  
0.14  
2.90  
1.30  
1.90  
0.43  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.000  
0.015  
0.003  
0.110  
0.047  
0.070  
0.012  
0.014  
0.083  
0°  
NOM  
0.039  
0.002  
0.017  
0.006  
0.114  
0.051  
0.075  
0.017  
0.021  
0.094  
−−−  
MAX  
0.044  
0.004  
0.020  
0.008  
0.120  
0.055  
0.080  
0.022  
0.027  
0.104  
10°  
L
1.11  
0.10  
0.50  
0.20  
3.04  
1.40  
2.04  
0.55  
0.69  
2.64  
10°  
3X  
b
L1  
VIEW C  
e
TOP VIEW  
A
H
E
T
c
A1  
STYLE 6:  
PIN 1. BASE  
SEE VIEW C  
SIDE VIEW  
END VIEW  
2. EMITTER  
3. COLLECTOR  
RECOMMENDED  
SOLDERING FOOTPRINT  
3X  
2.90  
0.90  
3X  
0.95  
0.80  
PITCH  
DIMENSIONS: MILLIMETERS  
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DTC143X/D  

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