MMSZ7V5ET1 [ONSEMI]
Zener Voltage Regulators; 齐纳稳压器
| 型号： | MMSZ7V5ET1 |
| 厂家： | 
ONSEMI |
| 描述： | Zener Voltage Regulators |
| 文件： | 总6页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMSZ2V4ET1 Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
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Specification Features
• 500 mW Rating on FR−4 or FR−5 Board
• Wide Zener Reverse Voltage Range − 2.4 V to 56 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Peak Power − 225 W (8 X 20 ms)
1
2
Cathode
Anode
2
Mechanical Characteristics
1
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
SOD−123
CASE 425
STYLE 1
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MARKING DIAGRAM
xx M
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20 ms (Note 1)
P
pk
225
Watts
xx = Specific Device Code
@ T ≤ 25°C
L
M
= Date Code
Total Power Dissipation on FR−5 Board,
P
D
(Note 2) @ T = 75°C
500
6.7
mW
mW/°C
L
Derated above 75°C
ORDERING INFORMATION
Thermal Resistance −
Junction−to−Ambient (Note 3)
R
340
°C/W
°C/W
°C
q
JA
†
Device
Package
Shipping
Thermal Resistance −
Junction−to−Lead (Note 3)
R
q
JL
150
MMSZxxxET1
MMSZxxxET3
SOD−123
3000/Tape & Reel
SOD−123 10,000/Tape & Reel
Junction and Storage
Temperature Range
T , T
J
−55 to
+150
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 11
2. FR−5 = 3.5 X 1.5 inches, using the On minimum recommended footprint as
shown in Figure 12.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
3. Thermal Resistance measurement obtained via infrared Scan Method
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
June, 2004 − Rev. 1
MMSZ2V4ET1/D
MMSZ2V4ET1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless
A
I
otherwise noted, V = 0.95 V Max. @ I = 10 mA)
F
F
I
F
Symbol
Parameter
V
Z
Reverse Zener Voltage @ I
ZT
I
ZT
Reverse Current
V
Z
V
R
Z
Maximum Zener Impedance @ I
ZT
ZT
V
I
V
F
R
ZT
I
Reverse Leakage Current @ V
I
R
R
V
Reverse Voltage
Forward Current
R
I
F
V
F
Forward Voltage @ I
F
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA)
A
F
F
V
Z1
(V)
Z
ZT1
V
Z2
(V)
Z
ZT2
(Notes 4 and 5)
(Note 6)
(Notes 4 and 5)
(Note 6)
Leakage Current
@ I
Nom
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
= 5 mA
Max
@ I = 1 mA
I @ V
R R
ZT1
ZT2
Device
Marking
Min
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
W
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
Min
1.7
Max
W
mA
V
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
Device
MMSZ2V4ET1
MMSZ2V7ET1
MMSZ3V0ET1
MMSZ3V3ET1
MMSZ3V6ET1
MMSZ3V9ET1
MMSZ4V3ET1
MMSZ4V7ET1
MMSZ5V1ET1
MMSZ5V6ET1
MMSZ6V2ET1
MMSZ6V8ET1
MMSZ7V5ET1
MMSZ8V2ET1
MMSZ9V1ET1
MMSZ10ET1
MMSZ11ET1
MMSZ12ET1
MMSZ13ET1
MMSZ15ET1
MMSZ16ET1
MMSZ18ET1
CL1
CL2
CL3
CL4
CL5
CL6
CL7
CL8
CL9
CM1
CM2
CM3
CM4
CM5
CM6
CM7
CM8
CM9
CN1
CN2
CN3
CN4
2.52
2.1
2.4
600
600
600
600
600
600
600
500
480
400
150
80
50
20
10
5
2.84
1.9
3.15
2.1
2.7
3.47
2.3
2.9
3.78
2.7
3.3
5
4.10
2.9
3.5
3
4.52
3.3
4.0
3
4.94
3.7
4.7
3
5.36
4.2
5.3
2
5.88
4.8
6.0
1
6.51
5.6
6.6
3
7.14
6.3
7.2
2
7.88
6.9
7.9
80
1
8.61
7.6
8.7
80
0.7
0.5
0.2
0.1
0.1
0.1
9.56
8.4
9.6
100
150
150
150
170
200
200
225
10.50
11.55
12.60
13.65
15.75
16.80
18.90
9.3
10.6
11.6
12.7
14.0
15.5
17.0
19.0
11
10.2
11.2
12.3
13.7
15.2
16.7
12
13
15
0.05
0.05
0.05
10.5
11.2
12.6
16
18
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
4. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage.
5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
6. Z and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
ZT
ZK
= 0.1 I
I
with the AC frequency = 1 kHz.
Z(AC)
Z(DC),
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2
MMSZ2V4ET1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA)
A
F
F
V
Z1
(V)
Z
ZT1
V
Z2
(V)
Z
ZT2
(Notes 4 and 5)
(Note 6)
(Notes 4 and 5)
(Note 6)
Leakage Current
@ V
@ I
= 5 mA
Max
@ I = 1 mA
I
R
ZT1
ZT2
R
Device
Min
Nom
20
22
24
27
30
33
36
39
43
W
55
Min
18.7
20.7
22.7
25
Max
W
mA
V
Marking
Device
MMSZ20ET1
MMSZ22ET1
MMSZ24ET1
MMSZ27ET1
MMSZ30ET1
MMSZ33ET1
MMSZ36ET1
MMSZ39ET1
MMSZ43ET1
MMSZ47ET1
MMSZ51ET1
MMSZ56ET1
CN5
CN6
CN7
CN8
CN9
CP1
CP2
CP3
CP4
CP5
CP6
CP7
19.00
20.90
22.80
25.65
28.50
31.35
34.20
37.05
40.85
21.00
23.10
25.20
28.35
31.50
34.65
37.80
40.95
45.15
21.1
23.2
25.5
28.9
32
225
250
250
300
300
325
350
350
375
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
14
55
15.4
16.8
18.9
21
70
80
80
27.8
30.8
33.8
36.7
39.7
80
35
23.1
25.2
27.3
30.1
90
38
130
150
41
46
48.45
53.20
51
56
53.55
58.80
180
200
47.6
51.5
54
60
400
425
0.05
0.05
35.7
39.2
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
4. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage.
5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
6. Z and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
ZT
ZK
= 0.1 I
I
with the AC frequency = 1 kHz.
Z(AC)
Z(DC),
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3
MMSZ2V4ET1 Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
100
TYPICAL T VALUES
FOR MMSZ2V4T1 SERIES
C
TYPICAL T VALUES
FOR MMSZ2V4T1 SERIES
C
V @ I
Z
ZT
V @ I
Z
ZT
10
2
1
0
−1
−2
1
−3
2
3
4
5
6
7
8
9
10 11
12
10
100
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 1. Temperature Coefficients
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
(Temperature Range −55°C to +150°C)
1.2
1.0
0.8
0.6
1000
100
10
RECTANGULAR
WAVEFORM, T = 25°C
A
P
versus T
L
D
P
D
versus T
A
0.4
0.2
0
1
0
25
50
75
100
125
150
0.1
1
10
100
1000
T, TEMPERATURE (°C)
PW, PULSE WIDTH (ms)
Figure 3. Steady State Power Derating
Figure 4. Maximum Nonrepetitive Surge Power
1000
100
10
1000
100
10
T = 25°C
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
J
I
= 0.1 I
Z(DC)
Z(AC)
f = 1 kHz
I = 1 mA
Z
5 mA
20 mA
150°C
25°C
0°C
75°C
1
1
1
10
V , NOMINAL ZENER VOLTAGE
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V , FORWARD VOLTAGE (V)
Z
F
Figure 5. Effect of Zener Voltage on
Zener Impedance
Figure 6. Typical Forward Voltage
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4
MMSZ2V4ET1 Series
TYPICAL CHARACTERISTICS
1000
100
1000
T = 25°C
A
0 V BIAS
1 V BIAS
100
10
1
+150°C
BIAS AT
50% OF V NOM
0.1
0.01
Z
10
1
+25°C
−55°C
0.001
0.0001
0.00001
1
10
100
0
10
20
30
40
50
60
70
80
90
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 7. Typical Capacitance
Figure 8. Typical Leakage Current
100
10
100
10
T = 25°C
A
T = 25°C
A
1
1
0.1
0.01
0.1
0.01
10
30
50
70
90
0
2
4
6
8
10
12
V , ZENER VOLTAGE (V)
Z
V , ZENER VOLTAGE (V)
Z
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
100
PEAK VALUE I
@ 8 ms
RSM
t
r
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
P
HALF VALUE I
/2 @ 20 ms
RSM
t
P
10
0
0
20
40
60
80
t, TIME (ms)
Figure 11. 8 × 20 ms Pulse Waveform
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5
MMSZ2V4ET1 Series
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE C
A
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
H
2. CONTROLLING DIMENSION: INCH.
1
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.40
2.55
0.95
0.50
0.25
0.00
−−−
MAX
1.80
2.85
1.35
0.70
−−−
A
B
C
D
E
H
J
0.055
0.100
0.037
0.020
0.01
0.071
0.112
0.053
0.028
−−−
K
B
0.000
−−−
0.140
0.004
0.006
0.152
0.10
0.15
3.85
K
3.55
E
STYLE 1:
2
PIN 1. CATHODE
2. ANODE
J
D
SOLDERING FOOTPRINT
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
mm
inches
ǒ
Ǔ
SCALE 10:1
Figure 12. SOD−123
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMSZ2V4ET1/D
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