MMSZ7V5ET1G [ONSEMI]
Zener Voltage Regulators 500 mW SODâ123 Surface Mount; 齐纳稳压器500毫瓦苏打???? 123表面贴装
| 型号： | MMSZ7V5ET1G |
| 厂家： | 
ONSEMI |
| 描述： | Zener Voltage Regulators 500 mW SODâ123 Surface Mount |
| 文件： | 总6页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMSZxxxET1G Series,
SZMMSZxxxET1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
http://onsemi.com
Specification Features
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 2.4 V to 56 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power − 225 W (8 X 20 ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
SOD−123
CASE 425
STYLE 1
1
2
Cathode
Anode
MARKING DIAGRAM
Pb−Free Packages are Available*
Mechanical Characteristics
xxx MG
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
1
G
xxx = Device Code
M
G
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
ORDERING INFORMATION
Peak Power Dissipation @ 20 ms (Note 1)
P
W
†
pk
Device
Package
Shipping
@ T 25C
225
L
MMSZxxxET1G
SOD−123
(Pb−Free)
3,000 /
Total Power Dissipation on FR−5 Board,
P
D
Tape & Reel
(Note 2) @ T = 75C
500
6.7
mW
mW/C
L
SZMMSZxxxET1G SOD−123
(Pb−Free)
3,000 /
Derated above 75C
Tape & Reel
Thermal Resistance, Junction−to−Ambient
(Note 3)
R
340
C/W
C/W
C
q
JA
MMSZxxxET3G
SOD−123
(Pb−Free)
10,000 /
Tape & Reel
Thermal Resistance, Junction−to−Lead
(Note 3)
R
q
JL
150
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Junction and Storage Temperature Range T , T
−55 to +150
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11
2. FR−5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint
3. Thermal Resistance measurement obtained via infrared Scan Method
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
January, 2012 − Rev. 7
MMSZ2V4ET1/D
MMSZxxxET1G Series, SZMMSZxxxET1G Series
ELECTRICAL CHARACTERISTICS (T = 25C unless
A
I
otherwise noted, V = 0.95 V Max. @ I = 10 mA)
F
F
I
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
V
Z
V
R
Z
Maximum Zener Impedance @ I
ZT
ZT
V
I
V
F
R
ZT
I
Reverse Leakage Current @ V
I
R
R
V
Reverse Voltage
Forward Current
R
I
F
V
F
Forward Voltage @ I
F
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA)
A
F
F
V
Z1
(V)
Z
ZT1
V
Z2
(V)
Z
ZT2
Max Reverse
(Notes 4 and 5)
(Note 6)
(Notes 4 and 5)
(Note 6)
Leakage Current
@ I
= 5 mA
Max
@ I = 1 mA
I @ V
R R
ZT1
ZT2
Device
Marking
Min
Nom
W
Min
Max
W
mA
V
Device*
MMSZ2V4ET1G
MMSZ2V7ET1G
MMSZ3V0ET1G
MMSZ3V3ET1G
MMSZ3V6ET1G
CL1
CL2
CL3
CL4
CL5
2.28
2.57
2.85
3.14
3.42
2.4
2.7
3.0
3.3
3.6
2.52
2.84
3.15
3.47
3.78
100
100
95
95
90
1.7
1.9
2.1
2.3
2.7
2.1
2.4
2.7
2.9
3.3
600
600
600
600
600
50
20
10
5
1
1
1
1
1
5
MMSZ3V9ET1G
MMSZ4V3ET1G
MMSZ4V7ET1G
MMSZ5V1ET1G
MMSZ5V6ET1G
CL6
CL7
CL8
CL9
CM1
3.71
4.09
4.47
4.85
5.32
3.9
4.3
4.7
5.1
5.6
4.10
4.52
4.94
5.36
5.88
90
90
80
60
40
2.9
3.3
3.7
4.2
4.8
3.5
4.0
4.7
5.3
6.0
600
600
500
480
400
3
3
3
2
1
1
1
2
2
2
MMSZ6V2ET1G
MMSZ6V8ET1G
MMSZ7V5ET1G
MMSZ8V2ET1G
MMSZ9V1ET1G
CM2
CM3
CM4
CM5
CM6
5.89
6.46
7.13
7.79
8.65
6.2
6.8
7.5
8.2
9.1
6.51
7.14
7.88
8.61
9.56
10
15
15
15
15
5.6
6.3
6.9
7.6
8.4
6.6
7.2
7.9
8.7
9.6
150
80
80
80
100
3
2
1
0.7
0.5
4
4
5
5
6
MMSZ10ET1G
MMSZ11ET1G
MMSZ12ET1G
MMSZ13ET1G
MMSZ15ET1G
CM7
CM8
CM9
CN1
CN2
9.50
10.45
11.40
12.35
14.25
10
11
12
13
15
10.50
11.55
12.60
13.65
15.75
20
20
25
30
30
9.3
10.6
11.6
12.7
14.0
15.5
150
150
150
170
200
0.2
0.1
0.1
0.1
7
8
8
8
10.2
11.2
12.3
13.7
0.05
10.5
MMSZ16ET1G
MMSZ18ET1G
MMSZ20ET1G
MMSZ22ET1G
MMSZ24ET1G
CN3
CN4
CN5
CN6
CN7
15.20
17.10
19.00
20.90
22.80
16
18
20
22
24
16.80
18.90
21.00
23.10
25.20
40
45
55
55
70
15.2
16.7
18.7
20.7
22.7
17.0
19.0
21.1
23.2
25.5
200
225
225
250
250
0.05
0.05
0.05
0.05
0.05
11.2
12.6
14
15.4
16.8
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage.
5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
6. Z and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
ZT
Z(AC)
ZK
= 0.1 I
I
with the AC frequency = 1 kHz.
Z(DC),
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
*Include SZ-prefix devices where applicable.
http://onsemi.com
2
MMSZxxxET1G Series, SZMMSZxxxET1G Series
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA)
A
F
F
V
Z1
(V)
Z
ZT1
V
Z2
(V)
Z
ZT2
Max Reverse
(Notes 7 and 8)
(Note 9)
(Notes 7 and 8)
(Note 9)
Leakage Current
@ I
=
ZT2
0.5 mA
@ I
= 2 mA
Max
@ I
= 0.1 mA
Max
I @ V
R R
ZT1
ZT2
Device
Marking
Min
Nom
W
Min
W
mA
V
Device*
MMSZ27ET1G
MMSZ30ET1G
MMSZ33ET1G
MMSZ36ET1G
MMSZ39ET1G
CN8
CN9
CP1
CP2
CP3
25.65
28.50
31.35
34.20
37.05
27
30
33
36
39
28.35
31.50
34.65
37.80
40.95
80
80
80
90
130
25
28.9
32
35
38
41
300
300
325
350
350
0.05
0.05
0.05
0.05
0.05
18.9
21
23.1
25.2
27.3
27.8
30.8
33.8
36.7
MMSZ43ET1G
MMSZ47ET1G
MMSZ51ET1G
MMSZ56ET1G
CP4
CP5
CP6
CP7
40.85
44.65
48.45
53.20
43
47
51
56
45.15
49.35
53.55
58.80
150
170
180
200
39.7
43.7
47.6
51.5
46
50
54
60
375
375
400
425
0.05
0.05
0.05
0.05
30.1
32.9
35.7
39.2
7. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage.
8. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
9. Z and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
ZT
Z(AC)
ZK
= 0.1 I
I
with the AC frequency = 1 kHz.
Z(DC),
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
*Include SZ-prefix devices where applicable.
http://onsemi.com
3
MMSZxxxET1G Series, SZMMSZxxxET1G Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
100
TYPICAL T VALUES
FOR MMSZxxxT1G SERIES,
SZMMSZxxxT1G SERIES
C
TYPICAL T VALUES
FOR MMSZxxxT1G SERIES,
SZMMSZxxxT1G SERIES
C
V @ I
Z
ZT
V @ I
Z
ZT
10
2
1
0
−1
−2
1
−3
2
3
4
5
6
7
8
9
10 11
12
10
100
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 1. Temperature Coefficients
Figure 2. Temperature Coefficients
(Temperature Range −55C to +150C)
(Temperature Range −55C to +150C)
1.2
1.0
0.8
0.6
1000
100
10
RECTANGULAR
WAVEFORM, T = 25C
A
P
versus T
L
D
P
D
versus T
A
0.4
0.2
0
1
0
25
50
75
100
125
150
0.1
1
10
100
1000
T, TEMPERATURE (C)
PW, PULSE WIDTH (ms)
Figure 3. Steady State Power Derating
Figure 4. Maximum Nonrepetitive Surge Power
1000
100
10
1000
100
10
T = 25C
75 V (MMSZ5267BT1G)
91 V (MMSZ5270BT1G)
J
I
= 0.1 I
Z(AC)
Z(DC)
f = 1 kHz
I = 1 mA
Z
5 mA
20 mA
150C
25C
0C
75C
1
1
1
10
V , NOMINAL ZENER VOLTAGE
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V , FORWARD VOLTAGE (V)
Z
F
Figure 5. Effect of Zener Voltage on
Zener Impedance
Figure 6. Typical Forward Voltage
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4
MMSZxxxET1G Series, SZMMSZxxxET1G Series
TYPICAL CHARACTERISTICS
1000
100
1000
T = 25C
A
0 V BIAS
1 V BIAS
100
10
1
+150C
BIAS AT
50% OF V NOM
0.1
0.01
Z
10
1
+25C
−55C
0.001
0.0001
0.00001
1
10
100
0
10
20
30
40
50
60
70
80
90
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 7. Typical Capacitance
Figure 8. Typical Leakage Current
100
10
100
10
T = 25C
A
T = 25C
A
1
1
0.1
0.01
0.1
0.01
10
30
50
70
90
0
2
4
6
8
10
12
V , ZENER VOLTAGE (V)
Z
V , ZENER VOLTAGE (V)
Z
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
100
PEAK VALUE I
@ 8 ms
RSM
t
r
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
P
HALF VALUE I
/2 @ 20 ms
RSM
t
P
10
0
0
20
40
60
80
t, TIME (ms)
Figure 11. 8 20 ms Pulse Waveform
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5
MMSZxxxET1G Series, SZMMSZxxxET1G Series
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
1
MILLIMETERS
INCHES
DIM MIN
NOM
1.17
0.05
0.61
---
MAX
1.35
0.10
0.71
0.15
1.80
2.84
3.86
---
MIN
0.037
0.000
0.020
---
NOM
0.046
0.002
0.024
---
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
---
A
A1
b
0.94
0.00
0.51
---
H
E
E
c
D
1.40
2.54
3.56
1.60
2.69
3.68
---
0.055
0.100
0.140
0.010
0
0.063
0.106
0.145
---
E
H
E
L
0.25
0
---
---
10
10
q
2
STYLE 1:
q
PIN 1. CATHODE
2. ANODE
L
b
C
SOLDERING FOOTPRINT*
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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MMSZ2V4ET1/D
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