MMBT3904TT1G [ONSEMI]
General Purpose Transistors; 通用晶体管型号: | MMBT3904TT1G |
厂家: | ONSEMI |
描述: | General Purpose Transistors |
文件: | 总7页 (文件大小:103K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMBT3904TT1
General Purpose Transistors
NPN Silicon
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT-416/SC-75 package which is
designed for low power surface mount applications.
http://onsemi.com
Features
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
•ꢀPb-Free Package is Available
MAXIMUM RATINGS (T = 25°C)
A
COLLECTOR
3
Rating
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Symbol
Value
40
Unit
Vdc
V
CEO
V
CBO
60
Vdc
1
BASE
V
EBO
6.0
Vdc
Collector Current - Continuous
I
C
200
mAdc
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR-4 Board (Note 1) @T = 25°C
P
D
200
1.6
mW
mW/°C
A
3
SOT-416/SC-75
CASE 463
STYLE 1
Derated above 25°C
Thermal Resistance, Junction- to- Ambient
(Note 1)
R
q
JA
600
°C/W
2
1
Total Device Dissipation,
FR-4 Board (Note 2) @T = 25°C
P
D
300
2.4
mW
mW/°C
A
MARKING DIAGRAM
Derated above 25°C
Thermal Resistance, Junction- to- Ambient
(Note 2)
R
q
JA
400
°C/W
Junction and Storage Temperature Range
T , T
J
- 55 to +150
°C
stg
AM MꢀG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ Minimum Pad
G
1
AM = Device Code
= Date Code*
2. FR-4 @ 1.0 × 1.0 Inch Pad
M
G
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT3904TT1
SOT-416
3000 Tape & Reel
MMBT3904TT1G SOT-416
(Pb-Free)
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©ꢀ Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 4
1
Publication Order Number:
MMBT3904TT1/D
Collector-ꢁBase Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
Emitter-ꢁBase Breakdown Voltage
(I = 10 mAdc, I = 0)
Vdc
Collector-ꢁEmitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
Base
-ꢁEmitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
SMALL-
SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
f
MHz
pF
Small-ꢁSignal Current Gain
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
Collecto ꢁ Emitter Breakdown Voltage (Note 3)
(I = 1.0 mAdc, I = 0)
V
Vdc
Vdc
MMBT3904TT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(BR)CEO
(BR)CBO
(BR)EBO
40
60
6.0
-
-
C
B
-
C
E
-
E
C
Base Cutoff Current
(V = 30 Vdc, V = 3.0 Vdc)
I
BL
nAdc
nAdc
50
50
CE
EB
Collector Cutoff Current
(V = 30 Vdc, V = 3.0 Vdc)
I
CEX
-
CE
EB
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I = 0.1 mAdc, V = 1.0 Vdc)
h
FE
-
40
70
100
60
-
C
CE
(I = 1.0 mAdc, V = 1.0 Vdc)
-
300
-
-
C
CE
(I = 10 mAdc, V = 1.0 Vdc)
C
CE
(I = 50 mAdc, V = 1.0 Vdc)
C
CE
(I = 100 mAdc, V = 1.0 Vdc)
30
C
CE
CE(sat)
-
-
0.2
0.3
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
0.65
-
0.85
0.95
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
T
300
-
-
C
CE
Output Capacitance
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
C
obo
4.0
8.0
10
CB
E
Input Capacitance
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
C
ibo
pF
-
EB
C
Input Impedance
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
h
k W
ie
re
fe
1.0
0.5
100
1.0
-
CE
C
- ꢁ4
Voltage Feedback Ratio
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
h
h
X 10
-
8.0
400
40
CE
C
CE
C
Output Admittance
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
h
oe
mmhos
dB
CE
C
Noise Figure
NF
(V = 5.0 Vdc, I = 100 mAdc, R = 1.0 k W, f = 1.0 kHz)
S
5.0
CE
C
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V = 3.0 Vdc, V = -ꢁ0.5 Vdc)
CC BE
MMBT3904TT1
MMBT3904TT1
MMBT3904TT1
MMBT3904TT1
t
t
-
-
-
-
35
35
d
ns
ns
(I = 10 mAdc, I = 1.0 mAdc)
C B1
t
r
(V = 3.0 Vdc, I = 10 mAdc)
CC C
200
50
s
(I = I = 1.0 mAdc)
B1 B2
t
f
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
MMBT3904TT1
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 1. Normalized Thermal Response
+3 V
+3 V
DUTY CYCLE = 2%
300 ns
t
1
10 < t < 500 ms
1
+10.9 V
DUTY CYCLE = 2%
+10.9 V
< 1 ns
275
275
10 k
10 k
0
-ꢀ0.5 V
C
S
< 4 pF*
C < 4 pF*
S
1N916
-ꢀ9.1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 2. Delay and Rise Time
Equivalent Test Circuit
Figure 3. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T = 25°C
J
T = 125°C
J
10
5000
V
CC
I /I = 10
= 40 V
3000
2000
7.0
C
B
5.0
1000
700
C
ibo
500
3.0
2.0
Q
T
300
200
C
obo
Q
A
100
70
1.0
50
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 4. Capacitance
Figure 5. Charge Data
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3
MMBT3904TT1
500
500
I /I = 10
C B
V
CC
I /I = 10
= 40 V
300
200
300
200
C
B
100
70
100
70
50
t @ V = 3.0 V
r CC
50
30
20
30
20
40 V
15 V
10
7
10
7
2.0 V
t @ V = 0 V
d OB
5
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 6. Turnꢀ-ꢀOn Time
Figure 7. Rise Time
500
500
1
t′ = t
- / t
8 f
s
s
V
I
= 40 V
CC
300
200
300
200
I
= I
B1 B2
= I
B1 B2
I /I = 20
C B
I /I = 10
C B
I /I = 20
C B
100
70
100
70
I /I = 20
C B
50
50
I /I = 10
C B
I /I = 10
C B
30
20
30
20
10
7
10
7
5
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 8. Storage Time
Figure 9. Fall Time
TYPICAL AUDIO SMALL-ꢀSIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
14
12
10
8
SOURCE RESISTANCE = 200 W
= 1.0 mA
f = 1.0 kHz
I
C
= 1.0 mA
12
I
C
I
C
= 0.5 mA
10
8
SOURCE RESISTANCE = 200 W
= 0.5 mA
I
C
= 50 mA
I
C
6
I
C
= 100 mA
SOURCE RESISTANCE = 1.0 k
= 50 mA
6
4
2
0
I
C
4
2
0
SOURCE RESISTANCE = 500 W
= 100 mA
I
C
0.1 0.2
0.4
1.0 2.0 4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
S
Figure 10. Noise Figure
Figure 11. Noise Figure
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4
MMBT3904TT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300
200
100
50
20
10
5
100
70
50
2
1
30
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 12. Current Gain
Figure 13. Output Admittance
20
10
10
7.0
5.0
5.0
3.0
2.0
2.0
1.0
0.5
1.0
0.7
0.5
0.2
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 14. Input Impedance
Figure 15. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
2.0
1.0
T = +125°C
J
V
CE
= 1.0 V
MMBT3904WT1
+25°C
-ꢀ55 °C
0.7
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70
100
200
I , COLLECTOR CURRENT (mA)
C
Figure 16. DC Current Gain
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5
MMBT3904TT1
1.0
0.8
0.6
0.4
T = 25°C
J
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 17. Collector Saturation Region
1.2
1.0
0.8
1.0
T = 25°C
J
V
@ I /I =10
C B
BE(sat)
+25°C TO +125°C
-ꢀ55 °C TO +25°C
0.5
0
q
FOR V
CE(sat)
VC
V
BE
@ V =1.0 V
CE
0.6
0.4
-ꢀ0.5
-ꢀ1.0
-ꢀ55 °C TO +25°C
+25°C TO +125°C
V
@ I /I =10
C B
CE(sat)
q
FOR V
BE(sat)
VB
0.2
0
-ꢀ1.5
-ꢀ2.0
1.0
2.0
5.0
10
20
50
100
200
0
20
40
60
80 100 120 140 160 180 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 18. “ON” Voltages
Figure 19. Temperature Coefficients
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6
MMBT3904TT1
PACKAGE DIMENSIONS
SC-75/SOT-416
CASE 463-01
ISSUE F
NOTES:
-E-
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN NOM MAX MIN
0.70
A1 0.00
INCHES
3
NOM MAX
e
-D-
A
0.80
0.05
0.90 0.027 0.031 0.035
0.10 0.000 0.002 0.004
0.30 0.006 0.008 0.012
0.25 0.004 0.006 0.010
1.65 0.059 0.063 0.067
0.90 0.027 0.031 0.035
0.04 BSC
1
b 3 PL
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
1.60
M
0.20 (0.008)
D
0.20 (0.008)
E
H
E
L
0.10
1.50
0.20 0.004 0.006 0.008
1.70 0.061 0.063 0.065
H
E
C
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
L
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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MMBT3904TT1/D
相关型号:
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