MMBT3904TT1G [ONSEMI]

General Purpose Transistors; 通用晶体管
MMBT3904TT1G
型号: MMBT3904TT1G
厂家: ONSEMI    ONSEMI
描述:

General Purpose Transistors
通用晶体管

晶体 晶体管
文件: 总7页 (文件大小:103K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMBT3904TT1  
General Purpose Transistors  
NPN Silicon  
This transistor is designed for general purpose amplifier  
applications. It is housed in the SOT-416/SC-75 package which is  
designed for low power surface mount applications.  
http://onsemi.com  
Features  
GENERAL PURPOSE  
AMPLIFIER TRANSISTORS  
SURFACE MOUNT  
ꢀPb-Free Package is Available  
MAXIMUM RATINGS (T = 25°C)  
A
COLLECTOR  
3
Rating  
Collector - Emitter Voltage  
Collector - Base Voltage  
Emitter - Base Voltage  
Symbol  
Value  
40  
Unit  
Vdc  
V
CEO  
V
CBO  
60  
Vdc  
1
BASE  
V
EBO  
6.0  
Vdc  
Collector Current - Continuous  
I
C
200  
mAdc  
2
EMITTER  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation,  
FR-4 Board (Note 1) @T = 25°C  
P
D
200  
1.6  
mW  
mW/°C  
A
3
SOT-416/SC-75  
CASE 463  
STYLE 1  
Derated above 25°C  
Thermal Resistance, Junction- to- Ambient  
(Note 1)  
R
q
JA  
600  
°C/W  
2
1
Total Device Dissipation,  
FR-4 Board (Note 2) @T = 25°C  
P
D
300  
2.4  
mW  
mW/°C  
A
MARKING DIAGRAM  
Derated above 25°C  
Thermal Resistance, Junction- to- Ambient  
(Note 2)  
R
q
JA  
400  
°C/W  
Junction and Storage Temperature Range  
T , T  
J
- 55 to +150  
°C  
stg  
AM MꢀG  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR-4 @ Minimum Pad  
G
1
AM = Device Code  
= Date Code*  
2. FR-4 @ 1.0 × 1.0 Inch Pad  
M
G
= Pb-Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBT3904TT1  
SOT-416  
3000 Tape & Reel  
MMBT3904TT1G SOT-416  
(Pb-Free)  
3000 Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
June, 2007 - Rev. 4  
1
Publication Order Number:  
MMBT3904TT1/D  
 
Collector-ꢁBase Breakdown Voltage  
(I = 10 mAdc, I = 0)  
                                           
V
V
Emitter-ꢁBase Breakdown Voltage  
(I = 10 mAdc, I = 0)  
                                        
Vdc  
Collector-ꢁEmitter Saturation Voltage  
(I = 10 mAdc, I = 1.0 mAdc)  
                                           
V
Vdc  
Vdc  
Base  
                                     
-ꢁEmitter Saturation Voltage  
(I = 10 mAdc, I = 1.0 mAdc)  
V
BE(sat)  
SMALL-  
                                          
SIGNAL CHARACTERISTICS  
Current-Gain - Bandwidth Product  
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)  
                                         
                                          
f
MHz  
pF  
Small-ꢁSignal Current Gain  
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)  
                                      
Collecto ꢁ Emitter Breakdown Voltage (Note 3)  
(I = 1.0 mAdc, I = 0)  
                                            
V
Vdc  
Vdc  
MMBT3904TT1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(BR)CEO  
(BR)CBO  
(BR)EBO  
40  
60  
6.0  
-
-
C
B
-
C
E
-
E
C
Base Cutoff Current  
(V = 30 Vdc, V = 3.0 Vdc)  
I
BL  
nAdc  
nAdc  
50  
50  
CE  
EB  
Collector Cutoff Current  
(V = 30 Vdc, V = 3.0 Vdc)  
I
CEX  
-
CE  
EB  
ON CHARACTERISTICS (Note 3)  
DC Current Gain  
(I = 0.1 mAdc, V = 1.0 Vdc)  
h
FE  
-
40  
70  
100  
60  
-
C
CE  
(I = 1.0 mAdc, V = 1.0 Vdc)  
-
300  
-
-
C
CE  
(I = 10 mAdc, V = 1.0 Vdc)  
C
CE  
(I = 50 mAdc, V = 1.0 Vdc)  
C
CE  
(I = 100 mAdc, V = 1.0 Vdc)  
30  
C
CE  
CE(sat)  
-
-
0.2  
0.3  
C
B
(I = 50 mAdc, I = 5.0 mAdc)  
C
B
0.65  
-
0.85  
0.95  
C
B
(I = 50 mAdc, I = 5.0 mAdc)  
C
B
T
300  
-
-
C
CE  
Output Capacitance  
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)  
C
obo  
4.0  
8.0  
10  
CB  
E
Input Capacitance  
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)  
C
ibo  
pF  
-
EB  
C
Input Impedance  
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)  
h
k W  
ie  
re  
fe  
1.0  
0.5  
100  
1.0  
-
CE  
C
- 4  
Voltage Feedback Ratio  
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)  
h
h
X 10  
-
8.0  
400  
40  
CE  
C
CE  
C
Output Admittance  
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)  
h
oe  
mmhos  
dB  
CE  
C
Noise Figure  
NF  
(V = 5.0 Vdc, I = 100 mAdc, R = 1.0 k W, f = 1.0 kHz)  
S
5.0  
CE  
C
SWITCHING CHARACTERISTICS  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
(V = 3.0 Vdc, V = -ꢁ0.5 Vdc)  
CC BE  
MMBT3904TT1  
MMBT3904TT1  
MMBT3904TT1  
MMBT3904TT1  
t
t
-
-
-
-
35  
35  
d
ns  
ns  
(I = 10 mAdc, I = 1.0 mAdc)  
C B1  
t
r
(V = 3.0 Vdc, I = 10 mAdc)  
CC C  
200  
50  
s
(I = I = 1.0 mAdc)  
B1 B2  
t
f
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.  
http://onsemi.com  
2
 
MMBT3904TT1  
1.0  
0.1  
D = 0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.01  
SINGLE PULSE  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
t, TIME (s)  
1.0  
10  
100  
1000  
Figure 1. Normalized Thermal Response  
+3 V  
+3 V  
DUTY CYCLE = 2%  
300 ns  
t
1
10 < t < 500 ms  
1
+10.9 V  
DUTY CYCLE = 2%  
+10.9 V  
< 1 ns  
275  
275  
10 k  
10 k  
0
-ꢀ0.5 V  
C
S
< 4 pF*  
C < 4 pF*  
S
1N916  
-ꢀ9.1 V  
< 1 ns  
* Total shunt capacitance of test jig and connectors  
Figure 2. Delay and Rise Time  
Equivalent Test Circuit  
Figure 3. Storage and Fall Time  
Equivalent Test Circuit  
TYPICAL TRANSIENT CHARACTERISTICS  
T = 25°C  
J
T = 125°C  
J
10  
5000  
V
CC  
I /I = 10  
= 40 V  
3000  
2000  
7.0  
C
B
5.0  
1000  
700  
C
ibo  
500  
3.0  
2.0  
Q
T
300  
200  
C
obo  
Q
A
100  
70  
1.0  
50  
0.1  
0.2 0.3 0.5 0.7 1.0  
2.0 3.0 5.0 7.0 10  
20 30 40  
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
REVERSE BIAS VOLTAGE (VOLTS)  
I , COLLECTOR CURRENT (mA)  
C
Figure 4. Capacitance  
Figure 5. Charge Data  
http://onsemi.com  
3
MMBT3904TT1  
500  
500  
I /I = 10  
C B  
V
CC  
I /I = 10  
= 40 V  
300  
200  
300  
200  
C
B
100  
70  
100  
70  
50  
t @ V = 3.0 V  
r CC  
50  
30  
20  
30  
20  
40 V  
15 V  
10  
7
10  
7
2.0 V  
t @ V = 0 V  
d OB  
5
5
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 6. Turnꢀ-ꢀOn Time  
Figure 7. Rise Time  
500  
500  
1
t= t  
- / t  
8 f  
s
s
V
I
= 40 V  
CC  
300  
200  
300  
200  
I
= I  
B1 B2  
= I  
B1 B2  
I /I = 20  
C B  
I /I = 10  
C B  
I /I = 20  
C B  
100  
70  
100  
70  
I /I = 20  
C B  
50  
50  
I /I = 10  
C B  
I /I = 10  
C B  
30  
20  
30  
20  
10  
7
10  
7
5
5
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 8. Storage Time  
Figure 9. Fall Time  
TYPICAL AUDIO SMALL-ꢀSIGNAL CHARACTERISTICS  
NOISE FIGURE VARIATIONS  
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)  
14  
12  
10  
8
SOURCE RESISTANCE = 200 W  
= 1.0 mA  
f = 1.0 kHz  
I
C
= 1.0 mA  
12  
I
C
I
C
= 0.5 mA  
10  
8
SOURCE RESISTANCE = 200 W  
= 0.5 mA  
I
C
= 50 mA  
I
C
6
I
C
= 100 mA  
SOURCE RESISTANCE = 1.0 k  
= 50 mA  
6
4
2
0
I
C
4
2
0
SOURCE RESISTANCE = 500 W  
= 100 mA  
I
C
0.1 0.2  
0.4  
1.0 2.0 4.0  
10  
20  
40  
100  
0.1 0.2  
0.4  
1.0 2.0  
4.0  
10  
20  
40  
100  
f, FREQUENCY (kHz)  
R , SOURCE RESISTANCE (k OHMS)  
S
Figure 10. Noise Figure  
Figure 11. Noise Figure  
http://onsemi.com  
4
MMBT3904TT1  
h PARAMETERS  
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)  
300  
200  
100  
50  
20  
10  
5
100  
70  
50  
2
1
30  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 12. Current Gain  
Figure 13. Output Admittance  
20  
10  
10  
7.0  
5.0  
5.0  
3.0  
2.0  
2.0  
1.0  
0.5  
1.0  
0.7  
0.5  
0.2  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 14. Input Impedance  
Figure 15. Voltage Feedback Ratio  
TYPICAL STATIC CHARACTERISTICS  
2.0  
1.0  
T = +125°C  
J
V
CE  
= 1.0 V  
MMBT3904WT1  
+25°C  
-ꢀ55 °C  
0.7  
0.5  
0.3  
0.2  
0.1  
0.1  
0.2  
0.3  
0.5 0.7  
1.0  
2.0  
3.0  
5.0 7.0 10  
20  
30  
50  
70  
100  
200  
I , COLLECTOR CURRENT (mA)  
C
Figure 16. DC Current Gain  
http://onsemi.com  
5
MMBT3904TT1  
1.0  
0.8  
0.6  
0.4  
T = 25°C  
J
I
C
= 1.0 mA  
10 mA  
30 mA  
100 mA  
0.2  
0
0.01  
0.02  
0.03  
0.05 0.07 0.1  
0.2  
0.3  
0.5  
0.7  
1.0  
2.0  
3.0  
5.0  
7.0  
10  
I , BASE CURRENT (mA)  
B
Figure 17. Collector Saturation Region  
1.2  
1.0  
0.8  
1.0  
T = 25°C  
J
V
@ I /I =10  
C B  
BE(sat)  
+25°C TO +125°C  
-ꢀ55 °C TO +25°C  
0.5  
0
q
FOR V  
CE(sat)  
VC  
V
BE  
@ V =1.0 V  
CE  
0.6  
0.4  
-ꢀ0.5  
-ꢀ1.0  
-ꢀ55 °C TO +25°C  
+25°C TO +125°C  
V
@ I /I =10  
C B  
CE(sat)  
q
FOR V  
BE(sat)  
VB  
0.2  
0
-ꢀ1.5  
-ꢀ2.0  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
0
20  
40  
60  
80 100 120 140 160 180 200  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 18. “ON” Voltages  
Figure 19. Temperature Coefficients  
http://onsemi.com  
6
MMBT3904TT1  
PACKAGE DIMENSIONS  
SC-75/SOT-416  
CASE 463-01  
ISSUE F  
NOTES:  
-E-  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
2
MILLIMETERS  
DIM MIN NOM MAX MIN  
0.70  
A1 0.00  
INCHES  
3
NOM MAX  
e
-D-  
A
0.80  
0.05  
0.90 0.027 0.031 0.035  
0.10 0.000 0.002 0.004  
0.30 0.006 0.008 0.012  
0.25 0.004 0.006 0.010  
1.65 0.059 0.063 0.067  
0.90 0.027 0.031 0.035  
0.04 BSC  
1
b 3 PL  
b
C
D
E
e
0.15  
0.10  
1.55  
0.70  
0.20  
0.15  
1.60  
0.80  
1.00 BSC  
0.15  
1.60  
M
0.20 (0.008)  
D
0.20 (0.008)  
E
H
E
L
0.10  
1.50  
0.20 0.004 0.006 0.008  
1.70 0.061 0.063 0.065  
H
E
C
STYLE 1:  
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
A
L
A1  
SOLDERING FOOTPRINT*  
0.356  
0.014  
1.803  
0.071  
0.787  
0.031  
0.508  
0.020  
1.000  
0.039  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb-Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
ꢂLiterature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
N. American Technical Support: 800-282-9855 Toll Free  
ꢂUSA/Canada  
Europe, Middle East and Africa Technical Support:  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada ꢂPhone: 421 33 790 2910  
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
Japan Customer Focus Center  
ꢂPhone: 81-3-5773-3850  
MMBT3904TT1/D  

相关型号:

MMBT3904TT1_07

General Purpose Transistors
ONSEMI

MMBT3904T_1

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DIODES

MMBT3904T_11

150mW NPN General Purpose Amplifier
MCC

MMBT3904T_15

NPN TRANSISTOR
WINNERJOIN

MMBT3904T_2

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DIODES

MMBT3904W

General Purpose Transistor NPN Silicon
WEITRON

MMBT3904W

NPN GENERAL PURPOSE SWITCHING TRANSISTOR
PANJIT

MMBT3904W

NPN Silicon Epitaxial Planar Transistor
SEMTECH

MMBT3904W

General Purpose Transistor
KEXIN

MMBT3904W

General Purpose Transistor
SECOS

MMBT3904W

Pb?Free package is available
TYSEMI

MMBT3904WG

General Purpose Transistor
ZOWIE