MMBD353LT1 [ONSEMI]
Dual Hot Carrier Mixer Diodes; 双热载流子二极管混频器
| 型号： | MMBD353LT1 |
| 厂家： | 
ONSEMI |
| 描述： | Dual Hot Carrier Mixer Diodes |
| 文件： | 总4页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
MMBD352LT1
MMBD353LT1
MMBD354LT1
MMBD355LT1
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultra–fast switching
circuits.
• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
• Low Forward Voltage — 0.5 Volts (Typ) @ I = 10 mA
3
F
1
2
1
2
ANODE
CATHODE
3
CATHODE/ANODE
MAXIMUM RATINGS (EACH DIODE)
MMBD352LT1
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
THERMAL CHARACTERISTICS
Characteristic
V
R
7.0
V
CC
1
2
Symbol
Max
Unit
CATHODE
ANODE
3
(1)
Total Device Dissipation FR–5 Board
P
D
225
mW
CATHODE/ANODE
T
A
= 25°C
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
MMBD353LT1
CASE 318–08, STYLE 19
SOT–23 (TO–236AB)
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R
qJA
P
D
(2)
Alumina Substrate
T
= 25°C
A
Derate above 25°C
2.4
417
mW/°C
°C/W
°C
ANODE
1
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
qJA
3
2
CATHODE
T , T
J stg
–55 to +150
ANODE
MMBD354LT1
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
A
Characteristic
OFF CHARACTERISTICS
Forward Voltage
Symbol
Min
Max
Unit
CATHODE
ANODE
1
V
F
—
0.60
V
3
2
(I = 10 mAdc)
F
CATHODE
Reverse Voltage Leakage Current (Note 3.)
I
R
mA
MMBD355LT1
CASE 318–08, STYLE 12
SOT–23 (TO–236AB)
(V = 3.0 V)
—
—
0.25
10
R
(V = 7.0 V)
R
Capacitance
C
—
1.0
pF
(V = 0 V, f = 1.0 MHz)
R
1. FR–5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
3. For each individual diode while the second diode is unbiased.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
MMBD352LT1/D
November, 2001 – Rev. 4
MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1
TYPICAL CHARACTERISTICS
1.0
100
10
T
A
= 85°C
0.9
0.8
0.7
0.6
T
A
= -40°C
1.0
0.1
T
= 25°C
A
0.3
0.4
0.5
0.6
0.7
0.8
0
1.0
2.0
3.0
4.0
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Forward Voltage
Figure 2. Capacitance
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2
MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. There-
fore, the following items should always be observed in
order to minimize the thermal stress to which the devices
are subjected.
mined byT
of the die, R
, the maximum rated junction temperature
, the thermal resistance from the device
J(max)
θJA
junction to ambient, and the operating temperature, T .
A
Using the values provided on the data sheet for the SOT–23
package, P can be calculated as follows:
• Always preheat the device.
D
• The delta temperature between the preheat and
soldering should be 100°C or less.*
T
– T
A
J(max)
P
=
D
R
θJA
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T of 25°C,
A
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
150°C – 25°C
556°C/W
P
=
= 225 milliwatts
D
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225 milli-
watts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad . Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
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3
MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1
PACKAGE DIMENSIONS
SOT–23 (TO–236AB)
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
INCHES
DIM MIN MAX
MILLIMETERS
S
C
B
MIN
2.80
1.20
0.89
0.37
1.78
MAX
3.04
1.40
1.11
1
2
A
B
C
D
G
H
J
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
V
G
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
0.0005 0.0040 0.013
0.0034 0.0070 0.085
K
L
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
0.35
0.89
2.10
0.45
S
V
H
J
D
K
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Literature Distribution Center for ON Semiconductor
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Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
MMBD352LT1/D
相关型号：
MMBD353LT1G
SILICON, UHF BAND, MIXER DIODE, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
ROCHESTER
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